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1. 发明授权

US5723877A Photoelectric conversion apparatus 失效
公开(公告)号：US5723877A
公开(公告)日：1998-03-03
申请号：US476030
申请日：1995-06-07
申请人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
发明人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
IPC分类号： H01L27/146 , H01L29/06 , H01L31/075 , H01L31/105 , H01L31/107 , H01L39/00 , H01L29/165 , H01L29/04 , H01L31/07
CPC分类号： H01L31/1075 , H01L27/14609 , H01L27/14681 , H01L31/035245
摘要： A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.

2. 发明授权

US6127692A Photoelectric conversion apparatus 失效
标题翻译：光电转换装置
公开(公告)号：US6127692A
公开(公告)日：2000-10-03
申请号：US141723
申请日：1993-10-26
申请人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
发明人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
IPC分类号： H01L27/146 , H01L29/06 , H01L31/075 , H01L31/105 , H01L31/107 , H01L39/00
CPC分类号： H01L31/1075 , H01L27/14609 , H01L27/14681 , H01L31/035245
摘要： A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.
摘要翻译：本发明的光电转换装置具有高灵敏度和低噪声，并且可以形成为在相对低的温度下具有大的面积，因为它具有由非单晶材料形成的吸光层（310），用于吸收光和产生光载流子，以及用于乘以由光吸收层产生的光载流子的乘法层（301,303,305,307,309）。

3. 发明授权

US5414275A Photoelectric converting device and image processing apparatus utilizing the same 失效
标题翻译：光电转换装置及利用其的图像处理装置
公开(公告)号：US5414275A
公开(公告)日：1995-05-09
申请号：US161441
申请日：1993-12-06
申请人： Shigetoshi Sugawa , Ihachiro Gofuku
发明人： Shigetoshi Sugawa , Ihachiro Gofuku
IPC分类号： H01L27/146 , H01L31/0376 , H01L31/10 , H01L31/105 , H01L31/20 , H01L27/14
CPC分类号： H01L31/03762 , H01L27/14681 , H01L31/1055 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous P- or N-semiconductor layer in contact with the I-type layer and an amorphous P- or N-semiconductor layer containing microcrystalline structure.
摘要翻译：具有PIN结构的光电转换装置包括非晶I型半导体层和定位成夹着I型层的电荷注入阻挡层。电荷注入阻挡层中的至少一个包括与I型层接触的无定形P-或N-半导体层和含有微晶结构的无定形P-或N-半导体层。

4. 发明授权

US5245201A Photoelectric converting device and image processing apparatus utilizing the same 失效
标题翻译：光电转换装置和图像处理装置
公开(公告)号：US5245201A
公开(公告)日：1993-09-14
申请号：US815029
申请日：1991-12-31
申请人： Hiraku Kozuka , Shigetoshi Sugawa , Ihachiro Gofuku
发明人： Hiraku Kozuka , Shigetoshi Sugawa , Ihachiro Gofuku
IPC分类号： H01L27/146 , H01L31/10 , H04N1/028
CPC分类号： H01L27/14681
摘要： A photoelectric converting device has non-monocrystalline semiconductor layers of PIN structure laminated on mutually isolated plural pixel electrodes. P- or N-doped layer on the pixel electrode contains at least a microcrystalline structure. N- or P-doped layer on the area other than the pixel electrode is amorphous.

5. 发明授权

US5453629A Photoelectric conversion device having at least one step-back layer 失效
标题翻译：具有至少一个后退层的光电转换装置
公开(公告)号：US5453629A
公开(公告)日：1995-09-26
申请号：US150983
申请日：1993-11-12
申请人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
发明人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
IPC分类号： H01L27/146 , H01L31/107 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/3745 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14681 , H01L31/1075 , Y10S438/90 , Y10S438/936
摘要： A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.
摘要翻译：光电转换装置包括多个光电转换单元和信号输出单元。信号输出单元具有至少一个用于存储由光电转换装置产生的电信号的存储装置。扫描装置扫描由电转换单元产生的电信号，并且读取装置读出由光电转换单元产生的电信号。每个光电转换单元包括光吸收层和倍增层。乘法层包括至少一个后乘结构，其乘以由吸收光产生的载流子，其中禁带宽度从最小到最大宽度连续变化。

6. 发明授权

US5985689A Method of fabricating photoelectric conversion device having at least one step-back layer 失效
标题翻译：制造具有至少一个后退层的光电转换装置的方法
公开(公告)号：US5985689A
公开(公告)日：1999-11-16
申请号：US12015
申请日：1998-01-22
申请人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
发明人： Ihachiro Gofuku , Masato Yamanobe , Izumi Tabata , Hiraku Kozuka
IPC分类号： H01L27/146 , H01L31/107 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/3745 , H01L21/20
CPC分类号： H01L27/14681 , H01L31/1075 , Y10S438/90 , Y10S438/936
摘要： A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical signals generated by the photoelectric conversion device. A scanning device scans the electrical signals generated by the electric conversion units, and a reading device reads out electrical signals generated by the photoelectric conversion units. Each of the photoelectric conversion units includes a light absorption layer and a multiplication layer. The multiplication layer includes at least one step-back structure which multiplies carriers produced by absorption of light, and in which a forbidden band width changes continuously from a minimum to a maximum width.
摘要翻译：光电转换装置包括多个光电转换单元和信号输出单元。信号输出单元具有至少一个用于存储由光电转换装置产生的电信号的存储装置。扫描装置扫描由电转换单元产生的电信号，并且读取装置读出由光电转换单元产生的电信号。每个光电转换单元包括光吸收层和倍增层。乘法层包括至少一个后乘结构，其乘以由吸收光产生的载流子，其中禁带宽度从最小到最大宽度连续变化。

7. 发明授权

US5308996A TFT device 失效
标题翻译： TFT器件
公开(公告)号：US5308996A
公开(公告)日：1994-05-03
申请号：US82908
申请日：1993-06-29
申请人： Satoshi Itabashi , Masaki Fukaya , Toshiyuki Komatsu , Yoshiyuki Osada , Ihachiro Gofuku
发明人： Satoshi Itabashi , Masaki Fukaya , Toshiyuki Komatsu , Yoshiyuki Osada , Ihachiro Gofuku
IPC分类号： H01L29/786 , H01L31/10 , H01L27/14
CPC分类号： H01L29/78609
摘要： A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.
摘要翻译： TFT器件具有绝缘基板，形成在绝缘基板上的半导体层，形成在半导体层上的一对相对电极和形成在半导体层上的绝缘膜之间的栅电极，其中掺杂有在半导体层和绝缘层之间的界面附近的半导体层中形成选自属于元素周期表V族的原子的至少一种杂质。

8. 发明授权

US4886962A Method for driving a photo-sensor by applying a pulse voltage to an auxiliary electrode during a non-read time 失效
标题翻译：在非读取时间期间通过向辅助电极施加脉冲电压来驱动光电传感器的方法
公开(公告)号：US4886962A
公开(公告)日：1989-12-12
申请号：US244562
申请日：1988-09-12
申请人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa
发明人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa
IPC分类号： H01L27/14 , H01L27/146 , H04N1/028
CPC分类号： H01L27/14665 , H04N3/15
摘要： A method for driving a photo-sensor to produce an improved, stable output which exactly represents the incident light is disclosed. The photo-sensor has a pair of main electrodes found on a semiconductor layer with a photo-sensing area arranged therebetween. A semiconductor layer and an auxiliary electrode are formed on at least the photo-sensing area with an insulating area being interleaved therein. The auxiliary electrode is used for stabilizing the photosensing output and providing a signal proportional to the incident light. The method of driving such a photo-sensor includes applying a bias voltage to the auxiliary electrode in accordance with the carriers carrying a current of the semiconductor layer. A voltage of the same polarity as that of the bias voltage, but smaller in absolute value, is applied to the auxiliary electrode for a predetermine period of time in a non-read period of the photo-sensor to cause a next photo-sensor output to be read while a previous photo-sensor has been erased.
摘要翻译：公开了一种用于驱动光电传感器以产生精确表示入射光的改进的稳定输出的方法。光电传感器具有在半导体层上发现的一对主电极，其间布置有感光区域。半导体层和辅助电极形成在至少具有交错的绝缘区域的感光区域上。辅助电极用于稳定光敏输出并提供与入射光成正比的信号。驱动这种光电传感器的方法包括：根据承载半导体层电流的载流子向辅助电极施加偏置电压。在光电传感器的非读取期间，将预定的时间周期，向辅助电极施加与偏置电压相同极性但绝对值相同极性的电压，使下一个光电传感器输出在先前的光电传感器被擦除时被读取。

9. 发明授权

US4886977A Photoelectric converter provided with voltage dividing means 失效
标题翻译：具有分压装置的光电转换器
公开(公告)号：US4886977A
公开(公告)日：1989-12-12
申请号：US117957
申请日：1987-11-09
申请人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa , Katsunori Hatanaka , Toshihiro Saika , Noriyuki Kaifu
发明人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa , Katsunori Hatanaka , Toshihiro Saika , Noriyuki Kaifu
IPC分类号： H01L27/146 , H04N1/193
CPC分类号： H01L27/14643 , H01L27/14665 , H04N1/1931
摘要： A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.

10. 发明授权

US06190911B1 Semiconductor device and fabrication method thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06190911B1
公开(公告)日：2001-02-20
申请号：US08670148
申请日：1996-06-27
申请人： Ihachiro Gofuku
发明人： Ihachiro Gofuku
IPC分类号： H01L21265
CPC分类号： H01L29/66954 , H01L21/28525 , H01L21/31155 , H01L29/66272
摘要： A method for fabricating a semiconductor device having a wiring part connected via an opening portion formed in an insulting film on a semiconductor region to the semiconductor region. The wiring part includes a polycrystalline semiconductor layer and a metal or metal silicide on the semiconductor layer. A polycrystalline semiconductor layer is deposited over the opening portion of the semiconductor region. First and second impurities are respectively ion injected into the polycrystalline semiconductor layer, wherein the ion injecting range of the first impurities is longer than that of the second impurities, thereby forming a high concentration region at least on a surface side of the polycrystalline semiconductor layer. Following the ion injection of the first and second impurities, a heat treatment is conducted to grow crystals of the polycrystalline semiconductor layer. After the heat treatment, a metal or a metal silicide is deposited on the polycrystalline layer using a low melting point method.
摘要翻译：一种半导体器件的制造方法，其具有通过形成在半导体区域上的绝缘膜上的开口部连接到半导体区域的布线部。布线部分包括半导体层上的多晶半导体层和金属或金属硅化物。多晶半导体层沉积在半导体区域的开口部分上。第一和第二杂质分别离子注入多晶半导体层，其中第一杂质的离子注入范围比第二杂质的离子注入范围长，从而至少在多晶半导体层的表面侧形成高浓度区域。在离子注入第一和第二杂质之后，进行热处理以生长多晶半导体层的晶体。在热处理之后，使用低熔点法在多晶层上沉积金属或金属硅化物。

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