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1. 发明授权

US4886977A Photoelectric converter provided with voltage dividing means 失效
标题翻译：具有分压装置的光电转换器
公开(公告)号：US4886977A
公开(公告)日：1989-12-12
申请号：US117957
申请日：1987-11-09
申请人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa , Katsunori Hatanaka , Toshihiro Saika , Noriyuki Kaifu
发明人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa , Katsunori Hatanaka , Toshihiro Saika , Noriyuki Kaifu
IPC分类号： H01L27/146 , H04N1/193
CPC分类号： H01L27/14643 , H01L27/14665 , H04N1/1931
摘要： A photoelectric converter comprising a photoelectric conversion unit which includes a pair of main electrodes, spaced by a photoreception area over a semiconductor layer, and an auxiliary electrode. The semiconductor layer and the auxiliary electrode are laminated through the intermediary of an insulating layer in at least the photoreception area. It also includes a storage capacitor for storing electric charges flowing through the photoelectric conversion unit, a transfer transistor for transferring the charges stored in the capacitor, a discharge transistor for discharging the charges stored in the storage capacitor, and dividing device for dividing a switching voltage applied to the control electrode of the discharge transistor to apply a divided voltage to the auxiliary electrode.

2. 发明授权

US4886962A Method for driving a photo-sensor by applying a pulse voltage to an auxiliary electrode during a non-read time 失效
标题翻译：在非读取时间期间通过向辅助电极施加脉冲电压来驱动光电传感器的方法
公开(公告)号：US4886962A
公开(公告)日：1989-12-12
申请号：US244562
申请日：1988-09-12
申请人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa
发明人： Ihachiro Gofuku , Yoshiyuki Osada , Katsumi Nakagawa
IPC分类号： H01L27/14 , H01L27/146 , H04N1/028
CPC分类号： H01L27/14665 , H04N3/15
摘要： A method for driving a photo-sensor to produce an improved, stable output which exactly represents the incident light is disclosed. The photo-sensor has a pair of main electrodes found on a semiconductor layer with a photo-sensing area arranged therebetween. A semiconductor layer and an auxiliary electrode are formed on at least the photo-sensing area with an insulating area being interleaved therein. The auxiliary electrode is used for stabilizing the photosensing output and providing a signal proportional to the incident light. The method of driving such a photo-sensor includes applying a bias voltage to the auxiliary electrode in accordance with the carriers carrying a current of the semiconductor layer. A voltage of the same polarity as that of the bias voltage, but smaller in absolute value, is applied to the auxiliary electrode for a predetermine period of time in a non-read period of the photo-sensor to cause a next photo-sensor output to be read while a previous photo-sensor has been erased.
摘要翻译：公开了一种用于驱动光电传感器以产生精确表示入射光的改进的稳定输出的方法。光电传感器具有在半导体层上发现的一对主电极，其间布置有感光区域。半导体层和辅助电极形成在至少具有交错的绝缘区域的感光区域上。辅助电极用于稳定光敏输出并提供与入射光成正比的信号。驱动这种光电传感器的方法包括：根据承载半导体层电流的载流子向辅助电极施加偏置电压。在光电传感器的非读取期间，将预定的时间周期，向辅助电极施加与偏置电压相同极性但绝对值相同极性的电压，使下一个光电传感器输出在先前的光电传感器被擦除时被读取。

3. 发明授权

US5723877A Photoelectric conversion apparatus 失效
公开(公告)号：US5723877A
公开(公告)日：1998-03-03
申请号：US476030
申请日：1995-06-07
申请人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
发明人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
IPC分类号： H01L27/146 , H01L29/06 , H01L31/075 , H01L31/105 , H01L31/107 , H01L39/00 , H01L29/165 , H01L29/04 , H01L31/07
CPC分类号： H01L31/1075 , H01L27/14609 , H01L27/14681 , H01L31/035245
摘要： A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.

4. 发明授权

US6127692A Photoelectric conversion apparatus 失效
标题翻译：光电转换装置
公开(公告)号：US6127692A
公开(公告)日：2000-10-03
申请号：US141723
申请日：1993-10-26
申请人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
发明人： Shigetoshi Sugawa , Ihachiro Gofuku , Kazuaki Ohmi , Yoshiyuki Osada , Masato Yamanobe
IPC分类号： H01L27/146 , H01L29/06 , H01L31/075 , H01L31/105 , H01L31/107 , H01L39/00
CPC分类号： H01L31/1075 , H01L27/14609 , H01L27/14681 , H01L31/035245
摘要： A photoelectric conversion apparatus of this invention has a high sensitivity and low noise, and can be formed to have a large area at a relatively low temperature since it has a light absorption layer (310), formed of a non-monocrystalline material, for absorbing light and generating photocarriers, and a multiplication layer (301, 303, 305, 307, 309) for multiplying the photocarriers generated by the light absorption layer.
摘要翻译：本发明的光电转换装置具有高灵敏度和低噪声，并且可以形成为在相对低的温度下具有大的面积，因为它具有由非单晶材料形成的吸光层（310），用于吸收光和产生光载流子，以及用于乘以由光吸收层产生的光载流子的乘法层（301,303,305,307,309）。

5. 发明授权

US5308996A TFT device 失效
标题翻译： TFT器件
公开(公告)号：US5308996A
公开(公告)日：1994-05-03
申请号：US82908
申请日：1993-06-29
申请人： Satoshi Itabashi , Masaki Fukaya , Toshiyuki Komatsu , Yoshiyuki Osada , Ihachiro Gofuku
发明人： Satoshi Itabashi , Masaki Fukaya , Toshiyuki Komatsu , Yoshiyuki Osada , Ihachiro Gofuku
IPC分类号： H01L29/786 , H01L31/10 , H01L27/14
CPC分类号： H01L29/78609
摘要： A TFT device has an insulation substrate, a semiconductor layer formed on the insulation substrate, a pair of opposed electrodes formed on the semiconductor layer, and a gate electrode formed on the semiconductor layer with an insulation film interposed therebetween, wherein a region doped with at least one type of impurity selected from atoms belonging to the V group of the periodic table is formed in the semiconductor layer at the vicinity of the interface between the semiconductor layer and the insulation layer.
摘要翻译： TFT器件具有绝缘基板，形成在绝缘基板上的半导体层，形成在半导体层上的一对相对电极和形成在半导体层上的绝缘膜之间的栅电极，其中掺杂有在半导体层和绝缘层之间的界面附近的半导体层中形成选自属于元素周期表V族的原子的至少一种杂质。

6. 发明授权

US4719501A Semiconductor device having junction formed from two different hydrogenated polycrystalline silicon layers 失效
标题翻译：具有由两个不同的氢化多晶硅层形成的结的半导体器件
公开(公告)号：US4719501A
公开(公告)日：1988-01-12
申请号：US815113
申请日：1985-12-26
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
IPC分类号： H01L21/285 , H01L29/04 , H01L29/786 , H01L29/812 , H01L29/872 , H01L31/0368 , H01L31/0392 , H01L31/108 , H01L31/18
CPC分类号： H01L21/28537 , H01L29/04 , H01L29/78675 , H01L29/78684 , H01L29/8126 , H01L29/872 , H01L31/03682 , H01L31/03921 , H01L31/108 , H01L31/18 , Y02E10/546
摘要： A semiconductor element is mainly composed of a polycrystalline Si thin film layer containing 0.01-3 atomic %, and further having a maximum surface unevenness of substantially not more than 800 .ANG. and/or a particular range of etching rate when etched with a predetermined etchant.
摘要翻译：半导体元件主要由含有0.01-3原子％的多晶Si薄膜层构成，并且当用预定的蚀刻剂进行蚀刻时，还具有基本上不大于800的最大表面凹凸和/或蚀刻速率的特定范围。

7. 发明授权

US4982251A Semiconductor element 失效
标题翻译：半导体元件
公开(公告)号：US4982251A
公开(公告)日：1991-01-01
申请号：US511952
申请日：1990-04-17
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yutaka Hirai , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
IPC分类号： G02F1/136 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/205 , H01L21/336 , H01L21/822 , H01L27/04 , H01L27/12 , H01L29/04 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66757 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L29/78 , H01L29/78618 , H01L29/78675
摘要： A semiconductor element comprises its main part constituted of a polycrystalline silicon semiconductor layer containing 0.01 to 1 atomic % of fluorine atoms.
摘要翻译：半导体元件的主要部分由含有0.01〜1原子％的氟原子的多晶硅半导体层构成。

8. 发明授权

US4905072A Semiconductor element 失效
标题翻译：半导体元件
公开(公告)号：US4905072A
公开(公告)日：1990-02-27
申请号：US188677
申请日：1988-04-29
申请人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
发明人： Toshiyuki Komatsu , Yutaka Hirai , Katsumi Nakagawa , Yoshiyuki Osada , Satoshi Omata , Takashi Nakagiri
IPC分类号： H01L21/306 , H01L29/04
CPC分类号： H01L29/04 , H01L21/30604 , H01L2924/0002
摘要： A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 .ANG. at its maximum. It may also have an etching rate of 20 .ANG./sec. when etched with a mixture of HF, HNO.sub.3 and glacial acetic acid (1:3:6).
摘要翻译：半导体器件包括含有不超过3原子％氢原子并且表面不均匀度最大不超过800的多晶硅薄膜的半导体层。它也可能具有20安培/秒的蚀刻速率。当用HF，HNO 3和冰醋酸（1:3:6）的混合物蚀刻时。

9. 发明授权

US4625224A Thin film transistor having polycrystalline silicon layer with 0.01 to 5 atomic % chlorine 失效
标题翻译：具有0.01〜5原子％氯的多晶硅层的薄膜晶体管
公开(公告)号：US4625224A
公开(公告)日：1986-11-25
申请号：US456717
申请日：1983-01-10
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
IPC分类号： H01L29/78 , G02F1/136 , G02F1/1368 , G09F9/30 , G09F9/35 , H01L21/822 , H01L27/04 , H01L27/12 , H01L29/04 , H01L29/786 , H01L49/02
CPC分类号： H01L29/78684 , H01L29/04 , H01L29/78675
摘要： A semiconductor element having a main part of a polycrystalline silicon semiconductor layer containing 0.01 to 5 atomic % of chlorine atoms.
摘要翻译：具有含有0.01〜5原子％的氯原子的多晶硅半导体层的主要部分的半导体元件。

10. 发明授权

US4766477A Semiconductor device including a semiconductor layer having a polycrystalline silicon film with selected atomic constituency 失效
标题翻译：半导体器件包括具有选定的原子选区的多晶硅膜的半导体层
公开(公告)号：US4766477A
公开(公告)日：1988-08-23
申请号：US885336
申请日：1986-07-11
申请人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
发明人： Katsumi Nakagawa , Toshiyuki Komatsu , Yoshiyuki Osada , Satoshi Omata , Yutaka Hirai , Takashi Nakagiri
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/203 , H01L21/205 , H01L27/12 , H01L29/04 , H01L29/167 , H01L29/78 , H01L29/786 , H01L31/0368
CPC分类号： H01L31/03682 , H01L29/04 , H01L29/167 , H01L29/78 , H01L29/78675 , Y02E10/546 , Y10S148/122
摘要： A semiconductor device mainly comprises a semiconductor layer of a polycrystalline silicon film containing at least one atom selected from the group consisting of carbon, sulfur, nitrogen and oxygen as a constituent.
摘要翻译：半导体器件主要包括含有选自由碳，硫，氮和氧组成的组中的至少一个原子的多晶硅膜的半导体层。

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