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1. 发明授权

US4833587A Semiconductor switching circuit 失效
标题翻译：半导体开关电路
公开(公告)号：US4833587A
公开(公告)日：1989-05-23
申请号：US171383
申请日：1988-03-21
申请人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
发明人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
IPC分类号： H01L27/06 , H03K17/72 , H03K17/732
CPC分类号： H01L27/0641 , H03K17/72 , H03K17/732 , H01L2924/0002
摘要： A fraction of current passing through the P-emitter region and N-base region of a thyristor is by-passed to the base-emitter junction of a PNP transistor. The amount of the base current is dependent on the thyristor current. Thus, as the anode current of the thyristor increases, the base current and hence the collector current of the PNP transistor increases. The collector current by-passed to the PNP transistor is fed, via a switch which is closed during the off-time of the thyistor, to the base-collector path of an NPN transistor whose collector and emitter are respectively connected to the gate and cathode of the thyristor. The turn-on voltage across the collector and emitter of the NPN transistor accordingly becomes lower than the gate-cathode voltage of the thyristor. The base-emitter current of the NPN transistor equals the collector current of the PNP transistor, the collector current being a fraction of the anode current by-passed to the PNP transistor. A fraction of the anode current of the turned-on thyristor is utilized as the control power for driving the NPN transistor so that additional external power for turning off the thyristor becomes almost unnecessary.
摘要翻译：通过晶闸管的P发射极区域和N基极区域的电流的一部分被旁路到PNP晶体管的基极 - 发射极结。基极电流的量取决于晶闸管电流。因此，随着晶闸管的阳极电流增加，PNP晶体管的基极电流和集电极电流增加。旁路到PNP晶体管的集电极电流通过在晶体管截止时间期间闭合的开关馈送到集电极和发射极分别连接到栅极和阴极的NPN晶体管的集电极路径的晶闸管。因此，NPN晶体管的集电极和发射极两端的导通电压变得低于晶闸管的栅极 - 阴极电压。 NPN晶体管的基极 - 发射极电流等于PNP晶体管的集电极电流，集电极电流是旁路到PNP晶体管的阳极电流的一部分。导通晶闸管的阳极电流的一部分被用作用于驱动NPN晶体管的控制功率，使得几乎不需要用于关断晶闸管的附加外部电源。

2. 发明授权

US4728825A Bidirectional MOS linear switch 失效
标题翻译：双向MOS线性开关
公开(公告)号：US4728825A
公开(公告)日：1988-03-01
申请号：US868022
申请日：1986-05-29
申请人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
发明人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
IPC分类号： H03K17/687
CPC分类号： H03K17/6874 , H03K2217/0018
摘要： In a bidirectional linear switch in which two MOS transistors are used with their sources mutually connected, the gates and the substrates of the transistors are also respectively mutually connected and a control signal is applied to the gates. A potential of the polarity such that the substrates are reversely biased to the sources is applied between the substrates and the sources. With this constitution, the linearity of the bidirectional switch is improved.
摘要翻译：在其两个MOS晶体管与其源极相互连接的双向线性开关中，晶体管的栅极和衬底也分别相互连接，并且控制信号被施加到栅极。将基板反向偏置到源极上的极性电位施加在基板和源之间。利用这种结构，提高了双向开关的线性。

3. 发明授权

US4740723A Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US4740723A
公开(公告)日：1988-04-26
申请号：US842186
申请日：1986-03-21
申请人： Shigeru Sugayama , Tatsuo Shimura , Tadaaki Kariya , Sigeo Tomita
发明人： Shigeru Sugayama , Tatsuo Shimura , Tadaaki Kariya , Sigeo Tomita
IPC分类号： H03K17/08 , H03K17/082 , H03K17/73 , H03K17/732 , H03K17/72
CPC分类号： H03K17/0824 , H03K17/732
摘要： A voltage across a resistor of a small value connected in series with the cathode or anode of a thyristor is used as a signal source for overcurrent detection. When an overcurrent is generated, the voltage across the resistor increases in excess of the built-in voltage between the base and emitter of a transistor, thereby turning on the transistor. A transistor to take out a current from the gate of the thyristor is turned on. Thus, the self-turn off operation of the thyristor is executed.
摘要翻译：使用与晶闸管的阴极或阳极串联连接的小值的电阻器上的电压作为过电流检测的信号源。当产生过电流时，电阻上的电压增加超过晶体管的基极和发射极之间的内置电压，从而导通晶体管。从晶闸管的栅极取出电流的晶体管导通。因此，执行晶闸管的自关闭操作。

4. 发明授权

US4884126A Semiconductor device having parallel-connected, self turn-off type semiconductor elements 失效
标题翻译：具有并联的自关断型半导体元件的半导体器件
公开(公告)号：US4884126A
公开(公告)日：1989-11-28
申请号：US144061
申请日：1988-01-15
申请人： Eiji Harada , Hitoshi Matsuzaki , Sigeo Tomita , Katsunori Chida
发明人： Eiji Harada , Hitoshi Matsuzaki , Sigeo Tomita , Katsunori Chida
IPC分类号： H01L25/04 , H01L25/07 , H01L25/18
CPC分类号： H01L25/18 , H01L25/072 , H01L2924/0002 , H01L2924/3011
摘要： A semiconductor device is disclosed in which at least two semiconductor elements each having a self turn-off function are disposed in a package and connected in paralllel, and in which the semiconductor elements, terminals mounted on the package, and internal wirings for connecting the semiconductor elements to the terminals are arranged in geometrical symmetry, to eliminate the imbalance of current between the semiconductor elements.
摘要翻译：公开了一种半导体器件，其中每个具有自关断功能的至少两个半导体元件设置在封装中并且以paralllel连接，并且其中半导体元件，安装在封装上的端子和用于连接半导体的内部布线端子的元件被布置成几何对称，以消除半导体元件之间的电流的不平衡。

5. 发明授权

US4831288A Direct parallel connection circuit of self-turn-off semiconductor elements 失效
标题翻译：自关断半导体元件的直接并联电路
公开(公告)号：US4831288A
公开(公告)日：1989-05-16
申请号：US53619
申请日：1987-05-26
申请人： Katsunori Chida , Sigeo Tomita , Kenji Koga
发明人： Katsunori Chida , Sigeo Tomita , Kenji Koga
IPC分类号： H03K17/12
CPC分类号： H03K17/125
摘要： A direct parallel connection circuit of gate turn-off thyristors wherein a plurality of GTO's having different current capacities are directly connected in parallel. A turn-on gate current and a turn-off gate current are passed to the gate of each of GTO's through a resistor and a reactor, respectively so as to substantially simultaneously turn-on and turn-off GTO'S, respectively.
摘要翻译：栅极截止晶闸管的直接并联电路，其中具有不同电流容量的多个GTO直接并联连接。导通栅极电流和截止栅极电流分别通过电阻器和电抗器传递到GTO的每个的栅极，以分别基本上同时导通和关断GTO。

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