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1. 发明授权

US4884126A Semiconductor device having parallel-connected, self turn-off type semiconductor elements 失效
标题翻译：具有并联的自关断型半导体元件的半导体器件
公开(公告)号：US4884126A
公开(公告)日：1989-11-28
申请号：US144061
申请日：1988-01-15
申请人： Eiji Harada , Hitoshi Matsuzaki , Sigeo Tomita , Katsunori Chida
发明人： Eiji Harada , Hitoshi Matsuzaki , Sigeo Tomita , Katsunori Chida
IPC分类号： H01L25/04 , H01L25/07 , H01L25/18
CPC分类号： H01L25/18 , H01L25/072 , H01L2924/0002 , H01L2924/3011
摘要： A semiconductor device is disclosed in which at least two semiconductor elements each having a self turn-off function are disposed in a package and connected in paralllel, and in which the semiconductor elements, terminals mounted on the package, and internal wirings for connecting the semiconductor elements to the terminals are arranged in geometrical symmetry, to eliminate the imbalance of current between the semiconductor elements.
摘要翻译：公开了一种半导体器件，其中每个具有自关断功能的至少两个半导体元件设置在封装中并且以paralllel连接，并且其中半导体元件，安装在封装上的端子和用于连接半导体的内部布线端子的元件被布置成几何对称，以消除半导体元件之间的电流的不平衡。

2. 发明授权

US5184272A High-side switch with overcurrent protecting circuit 失效
标题翻译：高边开关带过流保护电路
公开(公告)号：US5184272A
公开(公告)日：1993-02-02
申请号：US500881
申请日：1990-03-29
申请人： Koichi Suda , Hitoshi Matsuzaki , Masayuki Wada , Shoichi Ozeki
发明人： Koichi Suda , Hitoshi Matsuzaki , Masayuki Wada , Shoichi Ozeki
IPC分类号： H01L27/02 , H03K17/06 , H03K17/082
CPC分类号： H03K17/063 , H01L27/0251 , H03K17/0822
摘要： A switching circuit providing detection circuit for detecting a current which flows through a main P-channel MOSFET detection of a floating voltage dependent upon a power supply potential, a reference-voltage generating circuit for generating a reference voltage which is a floating voltage dependent upon the power supply potential and has a constant value independently of variations in power supply potential, a comparator circuit operated on a supply voltage which is a floating voltage dependent upon the power supply potential, for comparing a detected voltage from the detection circuit with the reference voltage from the reference-voltage generating means, to convert the detected voltage into a logic voltage signal (i.e., a bi-level voltage signal and a conversion circuit for converting the logic voltage outputted by the comparator circuit into a voltage measured from a ground potential.
摘要翻译：提供检测电路的开关电路，用于检测根据电源电位检测流过主P沟道MOSFET检测浮置电压的电流;基准电压产生电路，用于产生基于电压的浮置电压的参考电压电源电位，并且具有独立于电源电位变化的恒定值，比较器电路在作为取决于电源电位的浮动电压的电源电压下工作，用于将来自检测电路的检测电压与来自参考电压产生装置将检测到的电压转换为逻辑电压信号（即，双电平电压信号和用于将由比较器电路输出的逻辑电压转换为从地电位测量的电压的转换电路）。

3. 发明授权

US07803238B2 Al—Ni-rare earth element alloy sputtering target 有权
标题翻译： Al-Ni-稀土元素合金溅射靶
公开(公告)号：US07803238B2
公开(公告)日：2010-09-28
申请号：US11341531
申请日：2006-01-30
申请人： Toshihiro Kugimiya , Katsutoshi Takagi , Hitoshi Matsuzaki , Kotaro Kitashita , Yoichiro Yoneda
发明人： Toshihiro Kugimiya , Katsutoshi Takagi , Hitoshi Matsuzaki , Kotaro Kitashita , Yoichiro Yoneda
IPC分类号： C22C21/00
CPC分类号： C22C1/0416 , B22F2003/248 , B22F2998/10 , B22F2999/00 , C22C21/00 , C23C14/3414 , B22F9/082 , B22F3/1208 , B22F3/15 , B22F3/17 , B22F3/18 , B22F3/24 , B22F2201/02
摘要： An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0×104/mm2 or more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 μm or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.
摘要翻译：包含Ni和一种或多种稀土元素的Al基合金溅射靶，其中当纵横比为2.5以上且当量为0.2μm以上的化合物的截面为5.0×10 4 / mm 2以上时，以2000或更高的放大倍率观察垂直于靶平面的平面。

4. 发明申请

US20090057140A1 AG BASE ALLOY SPUTTERING TARGET AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： AG基合金喷射目标及其制造方法
公开(公告)号：US20090057140A1
公开(公告)日：2009-03-05
申请号：US12167597
申请日：2008-07-03
申请人： Katsutoshi Takagi , Hidekazu Moriomoto , Hitoshi Matsuzaki , Yuki Tauchi
发明人： Katsutoshi Takagi , Hidekazu Moriomoto , Hitoshi Matsuzaki , Yuki Tauchi
IPC分类号： C23C14/34 , B22F3/15
CPC分类号： C23C14/3414 , B22F3/15 , C22C5/06 , G11B7/259
摘要： A sputtering target made of an Ag base alloy containing 0.6 to 10.5 atomic % Ta and 2 to 13 atomic % Cu, is characterized in that: when the sputtering surface of the sputtering target is image-analyzed,(1) the ratio of the total area of Ta particles having a circle equivalent diameter of from 10 μm or more to 50 μm or less, to the total area of all Ta particles, is 60% or more, and the average distance between the centers of gravity of Ta particles is from 10 μm or more to 50 μm or less; and(2) the ratio of the total area of Cu particles having a circle equivalent diameter of from 10 μm or more to 50 μm or less, to the total area of all Cu particles, is 70% or more, and the average distance between the centers of gravity is from 60 μm or more to 120 μm or less.
摘要翻译：由含有0.6〜10.5原子％的Ta和2〜13原子％的Cu的Ag基合金构成的溅射靶的特征在于：对溅射靶的溅射面进行图像分析时，（1）圆当量直径为10μm以上至50μm以下的Ta粒子与所有Ta粒子的总面积的面积为60％以上，Ta粒子的重心之间的平均距离为 10岁以上至50岁以下; 和（2）圆当量直径为10μm以上至50μm以下的Cu粒子的总面积与所有Cu粒子的总面积的比例为70％以上，平均距离重心为60mam以上至120m2以下。

5. 发明授权

US4949137A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4949137A
公开(公告)日：1990-08-14
申请号：US358880
申请日：1989-05-31
申请人： Hitoshi Matsuzaki , Kiyoshi Tukuda , Toshikatsu Shirasawa , Hideki Miyazaki
发明人： Hitoshi Matsuzaki , Kiyoshi Tukuda , Toshikatsu Shirasawa , Hideki Miyazaki
IPC分类号： H01L21/76 , H01L21/762 , H01L21/8248 , H01L21/8249 , H01L27/04 , H01L27/06 , H01L29/08 , H01L29/739 , H01L29/78 , H01L29/8605 , H01L29/861
CPC分类号： H01L29/7812 , H01L21/76297 , H01L21/8248 , H01L21/8249 , H01L27/0694 , H01L29/0821 , H01L29/7803 , H01L29/7809 , H01L29/7815 , H01L29/8605 , H01L29/8611
摘要： A semiconductor device comprises a heavily doped semiconductor layer exposed to both principal surfaces of a semiconductor substrate, a semiconductor element such as a diode, a bipolar transistor, and a MOS transistor, etc. formed on one principal surface side of the semiconductor substrate, a resistor region connected in series with the semiconductor element on the other principal surface side of the semiconductor substrate, and an electrode for current detection kept in contact with the semiconductor layer on the one principal surface side.
摘要翻译：半导体器件包括暴露于半导体衬底的两个主表面的重掺杂半导体层，形成在半导体衬底的一个主表面侧上的诸如二极管的半导体元件，双极晶体管和MOS晶体管等，电阻区域与半导体衬底的另一个主表面侧上的半导体元件串联连接，以及用于电流检测的电极，与一个主表面侧上的半导体层保持接触。

6. 发明授权

US4607273A Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US4607273A
公开(公告)日：1986-08-19
申请号：US689039
申请日：1985-01-08
申请人： Shuroku Sakurada , Hitoshi Matsuzaki , Yasuhiko Ikeda , Takehiro Ohta
发明人： Shuroku Sakurada , Hitoshi Matsuzaki , Yasuhiko Ikeda , Takehiro Ohta
IPC分类号： H01L29/73 , H01L21/331 , H01L23/482 , H01L29/08 , H01L29/417 , H01L29/74 , H01L29/744
CPC分类号： H01L29/41716 , H01L23/4824 , H01L29/0804 , H01L29/0839 , H01L29/41708 , H01L29/74 , H01L2924/0002 , Y10S148/14
摘要： A semiconductor device having a semiconductor region of a high impurity concentration which is exposed to one major surface of a semiconductor pellet and has a plurality of split areas, and one main electrode on the major surface which makes low ohmic contact with the semiconductor region and has a bonding pad area for lead connection, comprises the high impurity concentration region underlying the entirety of the main electrode inclusive of the bonding pad, and an insulating film interposed between the bonding pad and the semiconductor region. In a gate turn-off thyristor with a short-circuiting P base region, the semiconductor region constitutes an N emitter region and an area thereof underlying the insulating film prevents the cathode/gate short and current concentration by lateral resistance upon turning off the device by the gate bias. In a bipolar transistor, the semiconductor region constitutes an emitter.
摘要翻译：一种半导体器件，其具有暴露于半导体芯片的一个主表面并且具有多个分裂区域的高杂质浓度的半导体区域，并且在主表面上的与半导体区域低欧姆接触的一个主电极具有用于引线连接的接合焊盘区域包括在包括接合焊盘的主电极整体下方的高杂质浓度区域和介于焊盘和半导体区域之间的绝缘膜。在具有短路P基极区域的栅极截止晶闸管中，半导体区域构成N发射极区域，并且其绝缘膜下方的面积通过横向电阻来防止阴极/栅极的短路和电流集中，门偏差。在双极晶体管中，半导体区域构成发射极。

7. 发明申请

US20120181172A1 METAL OXIDE-METAL COMPOSITE SPUTTERING TARGET 审中-公开
标题翻译：金属氧化物金属复合溅射靶
公开(公告)号：US20120181172A1
公开(公告)日：2012-07-19
申请号：US13496899
申请日：2010-09-15
申请人： Hitoshi Matsuzaki , Katsutoshi Takagi , Norihiro Jiko , Masaya Ehira
发明人： Hitoshi Matsuzaki , Katsutoshi Takagi , Norihiro Jiko , Masaya Ehira
IPC分类号： C23C14/34 , C23C14/08
CPC分类号： G11B7/266 , C23C14/3414 , G11B2007/24302 , G11B2007/2432
摘要： Disclosed is a metal oxide-metal composite sputtering target which is useful for the formation of a recording layer for an optical information recording medium, said recording layer containing a metal oxide and a metal. Specifically disclosed is a composite sputtering target containing a metal oxide (A) and a metal (B), wherein the maximum value of the circle-equivalent diameter of the metal oxide (A) is controlled to 200 μm or less.
摘要翻译：公开了一种金属氧化物 - 金属复合溅射靶，其用于形成用于光学信息记录介质的记录层，所述记录层含有金属氧化物和金属。具体公开了包含金属氧化物（A）和金属（B）的复合溅射靶，其中金属氧化物（A）的圆当量直径的最大值被控制在200μm以下。

8. 发明授权

US08152976B2 AG-based alloy sputtering target 失效
标题翻译： AG型合金溅射靶
公开(公告)号：US08152976B2
公开(公告)日：2012-04-10
申请号：US12198520
申请日：2008-08-26
申请人： Yuki Tauchi , Hitoshi Matsuzaki , Naoki Okawa
发明人： Yuki Tauchi , Hitoshi Matsuzaki , Naoki Okawa
IPC分类号： C23C14/00
CPC分类号： C23C14/3414 , B22F2003/244 , B22F2998/10 , C22C1/0466 , C22C5/06 , B22F3/24
摘要： The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 μm or more and a maximum height (Rz) of 20 μm or more at a sputtering surface thereof.
摘要翻译：本发明涉及包含选自Ti，V，W，Nb，Zr，Ta，Cr，Mo，Mn，Fe，Co，Ni，Cu，Al中的至少一种元素的Ag基合金溅射靶，和Si的总量为1〜15重量％，其中Ag系合金溅射靶的算术平均粗糙度（Ra）为2μm以上，最大高度（Rz）为20μm以上溅射表面。

9. 发明授权

US08123875B2 AG base sputtering target and process for producing the same 有权
标题翻译： AG基溅射靶及其制造方法
公开(公告)号：US08123875B2
公开(公告)日：2012-02-28
申请号：US12793257
申请日：2010-06-03
申请人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
发明人： Katsutoshi Takagi , Junichi Nakai , Yuuki Tauchi , Hitoshi Matsuzaki , Hideo Fujii
IPC分类号： C23C14/34
CPC分类号： C22C5/06 , C22F1/14 , C23C14/3414
摘要： An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax−Dave)/Dave×100(%) B1=(Dave
摘要翻译： Ag溅射靶6具有不大于18％的晶粒尺寸的三维波动。通过将溅射靶6在平面内切割成初始溅射表面，在每个暴露的溅射表面上选择多个位置，使用下面的公式计算值A1和B1，并且选择较大值之一来确定多个溅射表面的波动 A1和B1作为晶粒尺寸的三维波动。 A1 =（Dmax-Dave）/ Dave×100（％）B1 =（Dave

10. 发明申请

US20090057141A1 AG-BASED ALLOY SPUTTERING TARGET 失效
标题翻译：基于AG的合金喷射目标
公开(公告)号：US20090057141A1
公开(公告)日：2009-03-05
申请号：US12198520
申请日：2008-08-26
申请人： Yuki TAUCHI , Hitoshi Matsuzaki , Naoki Okawa
发明人： Yuki TAUCHI , Hitoshi Matsuzaki , Naoki Okawa
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , B22F2003/244 , B22F2998/10 , C22C1/0466 , C22C5/06 , B22F3/24
摘要： The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 μm or more and a maximum height (Rz) of 20 μm or more at a sputtering surface thereof.
摘要翻译：本发明涉及包含选自Ti，V，W，Nb，Zr，Ta，Cr，Mo，Mn，Fe，Co，Ni，Cu，Al中的至少一种元素的Ag基合金溅射靶，和Si的总量为1〜15重量％，其中Ag系合金溅射靶的算术平均粗糙度（Ra）为2μm以上，最大高度（Rz）为20μm以上，溅射表面。

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