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1. 发明授权

US4833587A Semiconductor switching circuit 失效
标题翻译：半导体开关电路
公开(公告)号：US4833587A
公开(公告)日：1989-05-23
申请号：US171383
申请日：1988-03-21
申请人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
发明人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
IPC分类号： H01L27/06 , H03K17/72 , H03K17/732
CPC分类号： H01L27/0641 , H03K17/72 , H03K17/732 , H01L2924/0002
摘要： A fraction of current passing through the P-emitter region and N-base region of a thyristor is by-passed to the base-emitter junction of a PNP transistor. The amount of the base current is dependent on the thyristor current. Thus, as the anode current of the thyristor increases, the base current and hence the collector current of the PNP transistor increases. The collector current by-passed to the PNP transistor is fed, via a switch which is closed during the off-time of the thyistor, to the base-collector path of an NPN transistor whose collector and emitter are respectively connected to the gate and cathode of the thyristor. The turn-on voltage across the collector and emitter of the NPN transistor accordingly becomes lower than the gate-cathode voltage of the thyristor. The base-emitter current of the NPN transistor equals the collector current of the PNP transistor, the collector current being a fraction of the anode current by-passed to the PNP transistor. A fraction of the anode current of the turned-on thyristor is utilized as the control power for driving the NPN transistor so that additional external power for turning off the thyristor becomes almost unnecessary.
摘要翻译：通过晶闸管的P发射极区域和N基极区域的电流的一部分被旁路到PNP晶体管的基极 - 发射极结。基极电流的量取决于晶闸管电流。因此，随着晶闸管的阳极电流增加，PNP晶体管的基极电流和集电极电流增加。旁路到PNP晶体管的集电极电流通过在晶体管截止时间期间闭合的开关馈送到集电极和发射极分别连接到栅极和阴极的NPN晶体管的集电极路径的晶闸管。因此，NPN晶体管的集电极和发射极两端的导通电压变得低于晶闸管的栅极 - 阴极电压。 NPN晶体管的基极 - 发射极电流等于PNP晶体管的集电极电流，集电极电流是旁路到PNP晶体管的阳极电流的一部分。导通晶闸管的阳极电流的一部分被用作用于驱动NPN晶体管的控制功率，使得几乎不需要用于关断晶闸管的附加外部电源。

2. 发明授权

US4666394A Apparatus for thermally fixing the formed thermoplastic products 失效
标题翻译：用于热固定所形成的热塑性产品的装置
公开(公告)号：US4666394A
公开(公告)日：1987-05-19
申请号：US699153
申请日：1985-02-06
申请人： Sukeyoshi Wakamiya , Naokazu Takeuchi , Yoshihisa Hama , Tatsu Akashi , Tatsuo Shimura
发明人： Sukeyoshi Wakamiya , Naokazu Takeuchi , Yoshihisa Hama , Tatsu Akashi , Tatsuo Shimura
IPC分类号： B29C51/04 , B29C51/10 , B29C51/42 , B29C71/02 , B29C51/18
CPC分类号： B29C51/04 , B29C51/10 , B29C51/42 , B29C71/02 , Y10S264/901
摘要： A process and apparatus for pneumatic-pressure forming or vacuum/pneumatic-pressure forming a web of thermoplastic material into a matrix form of containers and having the thus-formed plastic product processed with a thermal fixation operation, which comprises in combination the steps of holding a forming mold at a thermal fixing temperature for the plastic to be formed so as to have the matrix of containers thermally fixed through a temperature range characteristic of the plastic; and cooling-off thus-formed plastic containers, while maintaining the interior of the formed plastic containers at such a pressure level that the formed plastic containers are no longer subjected to any risk of deformation after the forming mold is removed, and after having been removed from the engagement with the forming mold.
摘要翻译：一种用于气压成形或真空/气压加压成型为容器的矩阵形式并具有用热固定操作处理的如此形成的塑料制品的热塑性材料网的方法和装置，其包括以下步骤：在热定形温度下形成塑料的成形模具，以使容器的基体在塑料特性的温度范围内热固定; 并冷却如此形成的塑料容器，同时将成形的塑料容器的内部保持在这样的压力水平，使得成形的塑料容器在成形模具被移除之后不再经受变形的风险，并且在被去除之后从与成型模具的接合。

3. 发明授权

US4728825A Bidirectional MOS linear switch 失效
标题翻译：双向MOS线性开关
公开(公告)号：US4728825A
公开(公告)日：1988-03-01
申请号：US868022
申请日：1986-05-29
申请人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
发明人： Shigeru Sugayama , Tadaaki Kariya , Tatsuo Shimura , Sigeo Tomita
IPC分类号： H03K17/687
CPC分类号： H03K17/6874 , H03K2217/0018
摘要： In a bidirectional linear switch in which two MOS transistors are used with their sources mutually connected, the gates and the substrates of the transistors are also respectively mutually connected and a control signal is applied to the gates. A potential of the polarity such that the substrates are reversely biased to the sources is applied between the substrates and the sources. With this constitution, the linearity of the bidirectional switch is improved.
摘要翻译：在其两个MOS晶体管与其源极相互连接的双向线性开关中，晶体管的栅极和衬底也分别相互连接，并且控制信号被施加到栅极。将基板反向偏置到源极上的极性电位施加在基板和源之间。利用这种结构，提高了双向开关的线性。

4. 发明授权

US4725770A Reference voltage circuit 失效
标题翻译：参考电压电路
公开(公告)号：US4725770A
公开(公告)日：1988-02-16
申请号：US13549
申请日：1987-02-11
申请人： Mitsuhiko Okutsu , Tatsuo Shimura , Tadaaki Kariya , Kazuyoshi Masuda
发明人： Mitsuhiko Okutsu , Tatsuo Shimura , Tadaaki Kariya , Kazuyoshi Masuda
IPC分类号： G05F3/30 , G05F3/20
CPC分类号： G05F3/30
摘要： A reference voltage circuit in which an output reference voltage is stabilized against variations in power source as well as in transistor current amplification factor h.sub.FE. In a reference voltage circuit comprising a DC power source connected to an output terminal, first and second resistors with their respective one ends commonly connected to the output terminal, a first NPN transistor with its collector shorted with its base and connected to the other end of the first resistor and its emitter grounded, a second NPN transistor with its collector connected to the other end of the second resistor and its base connected to the collector of the first NPN transistor, a third resistor connected between the emitter of the second NPN transistor and the ground, and a third NPN transistor with its collector connected to the output terminal, its base connected to the collector of the second NPN transistor and its emitter grounded, there are further provided a fourth resistor connected between the collector of the third NPN transistor and the output terminal and a PNP transistor with its base connected to the collector of the third NPN transistor, its emitter connected to the output terminal and its collector grounded.
摘要翻译：参考电压电路，其中输出参考电压针对电源的变化以及在晶体管电流放大系数hFE中稳定。在包括连接到输出端子的直流电源的参考电压电路中，第一和第二电阻器的相应的一端共同连接到输出端子，第一NPN晶体管的集电极与其基极短接并连接到另一端第一电阻器及其发射极接地，第二NPN晶体管的集电极连接到第二电阻器的另一端，其基极连接到第一NPN晶体管的集电极，第三电阻器连接在第二NPN晶体管的发射极和接地和第三NPN晶体管，其集电极连接到输出端，其基极连接到第二NPN晶体管的集电极并且其发射极接地，还提供连接在第三NPN晶体管的集电极和第三NPN晶体管的集电极之间的第四电阻器，输出端子和PNP晶体管，其基极连接到第三NPN晶体管的集电极，其发射极连接输出端子及其集电极接地。

5. 发明授权

US4758942A Turn-off control circuit for a gate turn-off thyristor 失效
标题翻译：关断晶闸管关断控制电路
公开(公告)号：US4758942A
公开(公告)日：1988-07-19
申请号：US105810
申请日：1987-10-08
申请人： Masayuki Wada , Chooji Shiina , Tadaki Kariya , Tatsuo Shimura
发明人： Masayuki Wada , Chooji Shiina , Tadaki Kariya , Tatsuo Shimura
IPC分类号： H03K17/73 , H03K17/732 , H02M1/08
CPC分类号： H03K17/732 , H03K17/731
摘要： A turn-off control circuit for a gate turn-off thyristor is used in a state where one end of an inductive load is connected therewith on the cathode side. The turn-off control circuit includes a first turning-off transistor, which takes-out electric current through the gate at the first stage of the turn-off operation of the gate turn-off thyristor, and a second turning-off transistor, which takes-out electric current through the gate at the second stage of the turn-off operation of the gate turn-off thyristor so as to surely effect the turn-off operation.
摘要翻译：在电感负载的一端与阴极侧连接的状态下，使用栅极截止晶闸管的截止控制电路。关断控制电路包括：第一截止晶体管，其在栅极截止晶闸管的截止操作的第一阶段取出电流通过栅极;以及第二截止晶体管，其中，在栅极截止晶闸管的关断操作的第二阶段，通过栅极取出电流，以确保实现关断操作。

6. 发明授权

US5248468A Method of making electrically conductive fibers 失效
标题翻译：制造导电纤维的方法
公开(公告)号：US5248468A
公开(公告)日：1993-09-28
申请号：US786170
申请日：1991-10-31
申请人： Hideyuki Mitamura , Fumikazu Yoshida , Tatsuo Shimura
发明人： Hideyuki Mitamura , Fumikazu Yoshida , Tatsuo Shimura
IPC分类号： D01D5/34 , D01F1/09 , D01F8/04
CPC分类号： D01D5/34 , D01F1/09 , D01F8/04
摘要： Electrically conductive conjugate fibers having a diameter less than 50 fm. The fibers include a thermoplastic sheath and a low-melting metal core, with the core occupying 0.2 to 50% of the sectional area of the fiber. The sectional area of the core varies by less than 25% in the longitudinal direction, and the total length of the discontinuous portions of the core is 5 cm or less per meter. The fibers can be produced with a conjugate spinning nozzle. The low-melting metal is provided to the nozzle from a closed fusion tank located at a position below the spinning nozzle. The metal is supplied to the spinning nozzle by means of pressure from inert gas, which is supplied to an upper space of the fusion tank. The level of metal in the fusion tank is maintained substantially constant, and the pressure of the gas is controlled so as to maintain a pressure variation of 0.1 kg/cm.sup.2 or less.
摘要翻译：直径小于50微米的导电复合纤维。纤维包括热塑性护套和低熔点金属芯，其中芯占纤维截面面积的0.2-50％。芯的截面积沿纵向变化小于25％，芯的不连续部分的总长度为每米5厘米或更小。纤维可以用复合纺丝喷嘴生产。将低熔点金属从位于纺丝喷嘴下方位置的封闭的熔化罐提供给喷嘴。通过来自惰性气体的压力将金属供给到纺丝喷嘴，惰性气体被供应到熔化罐的上部空间。熔池中的金属含量保持基本恒定，并且控制气体的压力以保持0.1kg / cm 2以下的压力变化。

7. 发明授权

US5173366A Electrically conductive fibers, apparatus and method for the production thereof 失效
标题翻译：导电纤维，其制造方法及其制造方法
公开(公告)号：US5173366A
公开(公告)日：1992-12-22
申请号：US789539
申请日：1991-11-08
申请人： Hideyuki Mitamura , Fumikazu Yoshida , Tatsuo Shimura
发明人： Hideyuki Mitamura , Fumikazu Yoshida , Tatsuo Shimura
IPC分类号： D01D5/34 , D01F1/09 , D01F8/04
CPC分类号： D01F1/09 , D01D5/34 , D01F8/04 , Y10T428/2929 , Y10T428/2931
摘要： Electrically conductive conjugate fibers having a diameter less than 50.mu.m. The fibers include a thermoplastic sheath and a low-melting metal core, with the core occupying 0.2 to 50% of the sectional area of the fiber. The sectional area of the core varies by less than 25% in the longitudinal direction, and the total length of the discontinuous portions of the core is 5 cm or less per meter. The fibers can be produced with a conjugate spinning nozzle. The low-melting metal is provided to the nozzle from the closed fusion tank located at a position below the spinning nozzle. The metal is supplied to the spinning nozzle by means of pressure from inert gas, which is supplied to an upper space of the fusion tank. The level of metal in the fusion tank is maintained substantially constant, and the pressure of the gas is controlled so as to maintain a pressure variation of 0.1 kg/cm.sup.2 or less.
摘要翻译：直径小于50微米的导电复合纤维。纤维包括热塑性护套和低熔点金属芯，其中芯占纤维截面面积的0.2-50％。芯的截面积沿纵向变化小于25％，芯的不连续部分的总长度为每米5厘米或更小。纤维可以用复合纺丝喷嘴生产。低熔点金属从位于纺丝喷嘴下方位置的封闭式熔化罐提供给喷嘴。通过来自惰性气体的压力将金属供给到纺丝喷嘴，惰性气体被供应到熔化罐的上部空间。熔池中的金属含量保持基本恒定，并且控制气体的压力以保持0.1kg / cm 2以下的压力变化。

8. 发明授权

US5083180A Lateral-type semiconductor device 失效
标题翻译：横向型半导体器件
公开(公告)号：US5083180A
公开(公告)日：1992-01-21
申请号：US595580
申请日：1990-10-11
申请人： Masato Miura , Tatsuo Shimura , Tadaaki Kariya , Norihiro Kawauchi , Sinichi Kurita
发明人： Masato Miura , Tatsuo Shimura , Tadaaki Kariya , Norihiro Kawauchi , Sinichi Kurita
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/732 , H01L29/735
CPC分类号： H01L29/735
摘要： A lateral-type semiconductor device is provided in which a p-emitter layer and a p-collector layer are formed on the exposed-surface side of an n-base layer. The exposed surfaces of the p-emitter layer and the n-base layer are substantially surrounded by the exposed surface of the p-collector layer. The n-base layer is connected to a base electrode or through a first heavily-doped region extending from under the n-base region to an exposed surface area on the outer-periphery side of the p-collector layer. In an alternative embodiment a second heavily-doped region for connecting the n-base layer and the first heavily-doped region can be provided.
摘要翻译：提供了一种横向型半导体器件，其中在n基层的暴露表面侧上形成有p发射极层和p集电极层。 p发射极层和n基层的暴露表面基本上被p集电体层的暴露表面包围。 n基层与基极电极或者从n基区域下方延伸的第一重掺杂区域连接到p集电体层的外周侧的露出表面区域。在替代实施例中，可以提供用于连接n基极层和第一重掺杂区域的第二重掺杂区域。

9. 发明授权

US4740723A Semiconductor switch 失效
标题翻译：半导体开关
公开(公告)号：US4740723A
公开(公告)日：1988-04-26
申请号：US842186
申请日：1986-03-21
申请人： Shigeru Sugayama , Tatsuo Shimura , Tadaaki Kariya , Sigeo Tomita
发明人： Shigeru Sugayama , Tatsuo Shimura , Tadaaki Kariya , Sigeo Tomita
IPC分类号： H03K17/08 , H03K17/082 , H03K17/73 , H03K17/732 , H03K17/72
CPC分类号： H03K17/0824 , H03K17/732
摘要： A voltage across a resistor of a small value connected in series with the cathode or anode of a thyristor is used as a signal source for overcurrent detection. When an overcurrent is generated, the voltage across the resistor increases in excess of the built-in voltage between the base and emitter of a transistor, thereby turning on the transistor. A transistor to take out a current from the gate of the thyristor is turned on. Thus, the self-turn off operation of the thyristor is executed.
摘要翻译：使用与晶闸管的阴极或阳极串联连接的小值的电阻器上的电压作为过电流检测的信号源。当产生过电流时，电阻上的电压增加超过晶体管的基极和发射极之间的内置电压，从而导通晶体管。从晶闸管的栅极取出电流的晶体管导通。因此，执行晶闸管的自关闭操作。

10. 发明授权

US4733106A Capacitive load driving device 失效
标题翻译：电容式负载驱动装置
公开(公告)号：US4733106A
公开(公告)日：1988-03-22
申请号：US718283
申请日：1985-04-01
申请人： Mitsuhiko Okutsu , Tatsuo Shimura , Tadaaki Kariya
发明人： Mitsuhiko Okutsu , Tatsuo Shimura , Tadaaki Kariya
IPC分类号： H03K17/73 , H02N2/00 , H03K17/04 , H03K17/732 , H03K3/26
CPC分类号： H03K17/0403 , H03K17/732
摘要： A device for driving a capacitive load, comprising a first switching element responsive to an external control signal for selectively conducting a charge current therethrough to the load, a second switching element responsive to the external control signal for conducting a discharge current from the load and a generator for generating from the discharge current a cutoff signal to be applied to the first switching element to ensure turn-off of the latter.
摘要翻译：一种用于驱动电容性负载的装置，包括响应于外部控制信号的第一开关元件，用于选择性地将充电电流传导到负载;第二开关元件，响应于外部控制信号，用于从负载传导放电电流;以及发生器，用于从放电电流产生要施加到第一开关元件的截止信号，以确保后者的关断。

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