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1. 发明申请

US20060160359A1 Vacuum processing apparatus 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20060160359A1
公开(公告)日：2006-07-20
申请号：US10546803
申请日：2004-02-12
申请人： Shigeru Kasai , Susumu Katoh , Tomohito Komatsu , Tetsuya Saito , Sumi Tanaka
发明人： Shigeru Kasai , Susumu Katoh , Tomohito Komatsu , Tetsuya Saito , Sumi Tanaka
IPC分类号： H01L21/44 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/455
摘要： A vacuum processing apparatus is constituted of the following portions: a processing container with the bottom, capable of drawing vacuum; a placement platform installed in the container; a heating portion for heating a substrate on the platform; a processing gas-feeding portion for feeding a processing gas into the container; a partitioning portion surrounding a space between the platform and the bottom of the container and partitioning off the space from a processing space in the container; a purge gas-feeding portion for feeding a purge gas into the space surrounded by the partitioning portion; a purge gas-discharging portion for discharging the purge gas from the space surrounded by the partitioning portion; a control portion for controlling the purge gas-feeding portion and/or the purge gas-discharging portion so as to regulate the pressure in the space surrounded by the partitioning portion; and a temperature-detecting portion penetrating the bottom of the container, inserted in the space surrounded by the partitioning portion, and having the top end in contact with the platform. The partitioning portion has the lower end in surface-contact with the bottom of the container. The control portion regulates the pressure in the space surrounded by the partitioning portion to a pressure higher than that in the processing space in the container.
摘要翻译：真空处理装置由以下部分构成：具有底部的能够抽真空的处理容器; 安装在容器中的放置平台; 用于加热所述平台上的基板的加热部分; 处理气体供给部，用于将处理气体供给到所述容器中; 围绕所述平台和所述容器的底部之间的空间并将所述空间与所述容器中的处理空间分隔开的分隔部分; 净化气体供给部分，用于将净化气体供给到由分隔部分包围的空间中; 净化气体排出部，用于从由分隔部包围的空间排出净化气体; 用于控制净化气体供给部分和/或净化气体排出部分以便调节由分隔部分包围的空间中的压力的控制部分; 以及穿过容器底部的温度检测部分，插入由分隔部分包围的空间中，并且顶端与平台接触。分隔部分的下端与容器的底部表面接触。控制部将由分隔部包围的空间内的压力调整为高于容器内的处理空间的压力。

2. 发明申请

US20070163713A1 Gas supply system and processing system 审中-公开
标题翻译：供气系统及处理系统
公开(公告)号：US20070163713A1
公开(公告)日：2007-07-19
申请号：US10525207
申请日：2003-08-25
申请人： Shigeru Kasai , Sumi Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
发明人： Shigeru Kasai , Sumi Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
IPC分类号： C23F1/00
CPC分类号： H01L21/67017 , C23C16/4481 , Y10T137/0324
摘要： A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided. In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage.
摘要翻译：提供了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的原料气体提供到处理设备中。一种处理系统，包括：处理装置，包括用于将特定材料气体注入处理容器26中的气体注入装置42，以便对被处理物体W进行特定处理，所述原料气体由金属化合物材料 M蒸汽压低; 以及用于向所述气体注入装置供应所述特定材料气体的气体供应系统24，所述气体注入装置是淋浴喷头部分，所述气体供应系统提供：从所述喷头部分向上延伸的气体通道56; 附着在所述气体通道的上端部分的材料储存罐58，用于在其中容纳所述金属化合物材料; 以及用于打开/关闭所述气体通道的打开/关闭阀60。

3. 发明申请

US20100038833A1 ANNEALING APPARATUS 有权
标题翻译：退火装置
公开(公告)号：US20100038833A1
公开(公告)日：2010-02-18
申请号：US12440034
申请日：2007-08-31
申请人： Shigeru Kasai , Hiroyuki Miyashita , Masatake Yoneda , Tomohiro Suzuki , Sumi Tanaka , Masamichi Nomura , Miwa Shimizu
发明人： Shigeru Kasai , Hiroyuki Miyashita , Masatake Yoneda , Tomohiro Suzuki , Sumi Tanaka , Masamichi Nomura , Miwa Shimizu
IPC分类号： H01L21/26 , C21D1/74
CPC分类号： H01L21/67115 , H01L21/67109 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.
摘要翻译：提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

4. 发明申请

US20120118504A1 PROCESSING APPARATUS AND METHOD FOR OPERATING SAME 审中-公开
标题翻译：处理装置及其操作方法
公开(公告)号：US20120118504A1
公开(公告)日：2012-05-17
申请号：US13386572
申请日：2010-07-21
申请人： Masamichi Nomura , Kenjiro Koizumi , Shigeru Kasai , Sumi Tanaka
发明人： Masamichi Nomura , Kenjiro Koizumi , Shigeru Kasai , Sumi Tanaka
IPC分类号： B44C1/22 , C23C16/458 , C23C16/52 , B25B11/00 , B24C3/00
CPC分类号： H01L21/68792
摘要： A processing apparatus for performing a process on an object includes a chamber; a rotary floater for supporting the object on its upper end side; XY rotating attraction bodies provided in the rotary floater at an interval circumferentially; a floating attraction body provided in the rotary floater to extend circumferentially; a floating electromagnet group for floating the rotary floater while adjusting an inclination of the rotary floater by applying a vertically upward acting magnetic attraction to the floating attraction body; an XY rotating electromagnet group for rotating the rotary floater while adjusting a horizontal position of the rotary floater by applying a magnetic attraction force to the XY rotating attraction bodies; a gas supply for supplying a gas into the chamber; a mechanism for performing a process on the object; and an apparatus control unit for controlling an entire operation of the apparatus.
摘要翻译：用于对物体进行处理的处理装置包括：室; 用于在其上端侧支撑物体的旋转浮子; XY旋转吸引体以周向间隔设置在旋转浮子中; 浮动吸引体，设置在所述旋转浮子中以沿周向延伸; 浮动电磁体组，用于通过向浮动吸引体施加垂直向上作用的磁吸引力来调节旋转浮子的倾斜度而浮动旋转浮子; XY旋转电磁体组，用于通过向XY旋转吸引体施加磁力来调节旋转浮子的水平位置来旋转旋转浮筒; 用于将气体供应到所述室中的气体供应源; 用于对物体执行处理的机构; 以及用于控制装置的整个操作的装置控制单元。

5. 发明授权

US09224623B2 Microwave irradiation apparatus 有权
标题翻译：微波照射装置
公开(公告)号：US09224623B2
公开(公告)日：2015-12-29
申请号：US13399163
申请日：2012-02-17
申请人： Shigeru Kasai , Ryoji Yamazaki , Mitsutoshi Ashida , Yuji Obata , Sumi Tanaka
发明人： Shigeru Kasai , Ryoji Yamazaki , Mitsutoshi Ashida , Yuji Obata , Sumi Tanaka
IPC分类号： H05B6/66 , H05B6/72 , C23F1/00 , C23C16/00 , H01L21/67 , H05B6/80
CPC分类号： H01L21/67017 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H05B6/806
摘要： There is provided a microwave irradiation apparatus capable of independently controlling a temperature of a target object while irradiating microwave to the target object. The microwave irradiation apparatus 2 includes a processing chamber 4 configured to be vacuum-evacuated; a supporting table 6 configured to support the target object; a processing gas introduction unit 106 configured to introduce a processing gas into the processing chamber; a microwave introduction unit 72 configured to introduce the microwave into the processing chamber; a heating unit 16 configured to heat the target object; a gas cooling unit 104 configured to cool the target object by a cooling gas; a radiation thermometer 64 configured to measure a temperature of the target object; and a temperature control unit 70 configured to adjust the temperature of the target object by controlling the heating unit and the gas cooling unit based on the temperature measured by the radiation thermometer.
摘要翻译：提供了一种能够在向目标物体照射微波的同时独立地控制目标物体的温度的微波照射装置。微波照射装置2包括被真空抽真空的处理室4。配置为支撑目标物体的支撑台6; 处理气体导入单元106，被配置为将处理气体引入到处理室中; 微波引入单元72，被配置为将微波引入处理室; 配置为加热目标物体的加热单元16; 构造成通过冷却气体对目标物体进行冷却的气体冷却单元104; 被配置为测量目标物体的温度的辐射温度计64; 以及温度控制单元70，其被配置为基于由辐射温度计测量的温度来控制加热单元和气体冷却单元来调节目标物体的温度。

6. 发明授权

US08440939B2 Annealing device 失效
标题翻译：退火装置
公开(公告)号：US08440939B2
公开(公告)日：2013-05-14
申请号：US12680221
申请日：2008-09-25
申请人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
发明人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
IPC分类号： H05B3/00
CPC分类号： H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.
摘要翻译：公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光对应于来自发光元件的光被传输到其中的加热源设置的构件。加热源具有附着在朝向晶片的支撑件上的发光元件。每个发光元件分别被透明树脂制成的透镜层覆盖。

7. 发明申请

US20100314377A1 ANNEALING DEVICE 失效
标题翻译：退火装置
公开(公告)号：US20100314377A1
公开(公告)日：2010-12-16
申请号：US12680221
申请日：2008-09-25
申请人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
发明人： Shigeru Kasai , Tomohiro Suzuki , Sumi Tanaka , Masatake Yoneda , Hiroyuki Miyashita
IPC分类号： H05B1/00 , H01L21/26 , H01L33/00
CPC分类号： H01L21/67115 , H01L25/0753 , H01L33/54 , H01L2224/48091 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.
摘要翻译：公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光对应于来自发光元件的光被传输到其中的加热源设置的构件。加热源具有附着在朝向晶片的支撑件上的发光元件。每个发光元件分别被透明树脂制成的透镜层覆盖。

8. 发明申请

US20120211486A1 MICROWAVE IRRADIATION APPARATUS 有权
标题翻译：微波辐射装置
公开(公告)号：US20120211486A1
公开(公告)日：2012-08-23
申请号：US13399163
申请日：2012-02-17
申请人： Shigeru Kasai , Ryoji Yamazaki , Mitsutoshi Ashida , Yuji Obata , Sumi Tanaka
发明人： Shigeru Kasai , Ryoji Yamazaki , Mitsutoshi Ashida , Yuji Obata , Sumi Tanaka
IPC分类号： H05B6/66 , H05B6/64
CPC分类号： H01L21/67017 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H05B6/806
摘要： There is provided a microwave irradiation apparatus capable of independently controlling a temperature of a target object while irradiating microwave to the target object. The microwave irradiation apparatus 2 includes a processing chamber 4 configured to be vacuum-evacuated; a supporting table 6 configured to support the target object; a processing gas introduction unit 106 configured to introduce a processing gas into the processing chamber; a microwave introduction unit 72 configured to introduce the microwave into the processing chamber; a heating unit 16 configured to heat the target object; a gas cooling unit 104 configured to cool the target object by a cooling gas; a radiation thermometer 64 configured to measure a temperature of the target object; and a temperature control unit 70 configured to adjust the temperature of the target object by controlling the heating unit and the gas cooling unit based on the temperature measured by the radiation thermometer.
摘要翻译：提供了一种能够在向目标物体照射微波的同时独立地控制目标物体的温度的微波照射装置。微波照射装置2包括被真空抽真空的处理室4。配置为支撑目标物体的支撑台6; 处理气体导入单元106，被配置为将处理气体引入到处理室中; 微波引入单元72，被配置为将微波引入处理室; 配置为加热目标物体的加热单元16; 构造成通过冷却气体对目标物体进行冷却的气体冷却单元104; 被配置为测量目标物体的温度的辐射温度计64; 以及温度控制单元70，其被配置为基于由辐射温度计测量的温度来控制加热单元和气体冷却单元来调节目标物体的温度。

9. 发明授权

US08246900B2 Annealing apparatus 有权
标题翻译：退火设备
公开(公告)号：US08246900B2
公开(公告)日：2012-08-21
申请号：US12440034
申请日：2007-08-31
申请人： Shigeru Kasai , Hiroyuki Miyashita , Masatake Yoneda , Tomohiro Suzuki , Sumi Tanaka , Masamichi Nomura , Miwa Shimizu
发明人： Shigeru Kasai , Hiroyuki Miyashita , Masatake Yoneda , Tomohiro Suzuki , Sumi Tanaka , Masamichi Nomura , Miwa Shimizu
IPC分类号： H01L21/26 , C21D1/74
CPC分类号： H01L21/67115 , H01L21/67109 , H01L31/1864 , Y02E10/50 , Y02P70/521
摘要： Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.
摘要翻译：提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

10. 发明申请

US20050189074A1 Gas processing apparatus and method and computer storage medium storing program for controlling same 审中-公开
标题翻译：气体处理装置和方法以及用于控制其的计算机存储介质存储程序
公开(公告)号：US20050189074A1
公开(公告)日：2005-09-01
申请号：US11123174
申请日：2005-05-06
申请人： Shigeru Kasai , Seiji Ishibashi , Kaoru Yamamoto , Sumi Tanaka , Kenichi Yanagitani
发明人： Shigeru Kasai , Seiji Ishibashi , Kaoru Yamamoto , Sumi Tanaka , Kenichi Yanagitani
IPC分类号： C23F1/00 , G05D16/20 , H01L21/00 , H01L21/683
CPC分类号： H01L21/67253 , G05D16/2026 , H01L21/67109 , H01L21/6831
摘要： A processing apparatus includes a processing vessel, a gas introduction unit, a processing gas supply unit, a nonreactive gas supply unit, a vacuum pumping unit, a pressure gauge and a control unit. The control unit controls a valve opening ratio of a pressure control valve based on a detection value of the pressure gauge while making a processing gas flow to a flow rate controller of the processing gas supply unit at a constant flow rate when performing a process in which a partial pressure of the processing gas is important. Meanwhile, when performing a process wherein the partial pressure of the processing gas is relatively unimportant, the control unit fixes the valve opening ratio of the pressure control valve at a predetermined value, and operating a flow rate controller of the nonreactive gas supply unit to control a flow rate based on the detection value.
摘要翻译：处理装置包括处理容器，气体导入单元，处理气体供给单元，非反应性气体供给单元，真空泵送单元，压力计和控制单元。控制单元在执行以下处理过程的过程中，以处于恒定流量的方式使处理气体流入处理气体供给单元的流量控制器时，基于压力计的检测值来控制压力控制阀的开阀率处理气体的分压很重要。同时，当进行处理气体的分压相对不重要的处理时，控制单元将压力控制阀的开阀比固定在预定值，并且操作非反应气供给单元的流量控制器以控制基于检测值的流量。

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