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1. 发明申请

US20090133755A1 Gas supply system and proessing system 失效
标题翻译：供气系统和进气系统
公开(公告)号：US20090133755A1
公开(公告)日：2009-05-28
申请号：US12320197
申请日：2009-01-21
申请人： Shigeru Kasai , Sum Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
发明人： Shigeru Kasai , Sum Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
IPC分类号： C23C16/448 , G05D7/06
CPC分类号： H01L21/67017 , C23C16/4481 , Y10T137/0324
摘要： A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided.In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage.
摘要翻译：提供了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的原料气体提供到处理设备中。一种处理系统，包括：处理装置，包括用于将特定材料气体注入处理容器26中的气体注入装置42，以便对被处理物体W进行特定处理，所述原料气体由金属化合物材料 M蒸汽压低; 以及用于向所述气体注入装置供应所述特定材料气体的气体供应系统24，所述气体注入装置是淋浴喷头部分，所述气体供应系统提供：从所述喷头部分向上延伸的气体通道56; 附着在所述气体通道的上端部分的材料储存罐58，用于在其中容纳所述金属化合物材料; 以及用于打开/关闭所述气体通道的打开/关闭阀60。

2. 发明申请

US20050189074A1 Gas processing apparatus and method and computer storage medium storing program for controlling same 审中-公开
标题翻译：气体处理装置和方法以及用于控制其的计算机存储介质存储程序
公开(公告)号：US20050189074A1
公开(公告)日：2005-09-01
申请号：US11123174
申请日：2005-05-06
申请人： Shigeru Kasai , Seiji Ishibashi , Kaoru Yamamoto , Sumi Tanaka , Kenichi Yanagitani
发明人： Shigeru Kasai , Seiji Ishibashi , Kaoru Yamamoto , Sumi Tanaka , Kenichi Yanagitani
IPC分类号： C23F1/00 , G05D16/20 , H01L21/00 , H01L21/683
CPC分类号： H01L21/67253 , G05D16/2026 , H01L21/67109 , H01L21/6831
摘要： A processing apparatus includes a processing vessel, a gas introduction unit, a processing gas supply unit, a nonreactive gas supply unit, a vacuum pumping unit, a pressure gauge and a control unit. The control unit controls a valve opening ratio of a pressure control valve based on a detection value of the pressure gauge while making a processing gas flow to a flow rate controller of the processing gas supply unit at a constant flow rate when performing a process in which a partial pressure of the processing gas is important. Meanwhile, when performing a process wherein the partial pressure of the processing gas is relatively unimportant, the control unit fixes the valve opening ratio of the pressure control valve at a predetermined value, and operating a flow rate controller of the nonreactive gas supply unit to control a flow rate based on the detection value.
摘要翻译：处理装置包括处理容器，气体导入单元，处理气体供给单元，非反应性气体供给单元，真空泵送单元，压力计和控制单元。控制单元在执行以下处理过程的过程中，以处于恒定流量的方式使处理气体流入处理气体供给单元的流量控制器时，基于压力计的检测值来控制压力控制阀的开阀率处理气体的分压很重要。同时，当进行处理气体的分压相对不重要的处理时，控制单元将压力控制阀的开阀比固定在预定值，并且操作非反应气供给单元的流量控制器以控制基于检测值的流量。

3. 发明授权

US07854962B2 Gas supply method using a gas supply system 失效
标题翻译：供气方式采用供气系统
公开(公告)号：US07854962B2
公开(公告)日：2010-12-21
申请号：US12320197
申请日：2009-01-21
申请人： Shigeru Kasai , Sum Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
发明人： Shigeru Kasai , Sum Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
IPC分类号： C23C16/448
CPC分类号： H01L21/67017 , C23C16/4481 , Y10T137/0324
摘要： Disclosed herein is a processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss. The processing system has a processing apparatus including a gas injection injector for injecting a specific material gas into a processing vessel in order to provide specific processing to an object to be processed W, the material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system for supplying the specific material gas to the gas injector, the gas injector is a shower head portion and the gas supply system provides: a gas passage extending upwardly from the showerhead portion; a material reservoir tank attached to the upper-end portion of the gas passage for containing the metallic compound material therein; and an open/close valve for opening/closing the gas passage.
摘要翻译：这里公开了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的材料气体提供到处理装置中。处理系统具有处理装置，该处理装置包括用于将特定材料气体注入到处理容器中的气体注入喷射器，以便对被加工物W进行特定处理，所述原料气体由低蒸气的金属化合物M 压力; 以及用于将特定材料气体供给到气体喷射器的气体供给系统，气体喷射器是淋浴头部分，气体供应系统提供：从喷头部分向上延伸的气体通道; 附着在气体通道的上端部分的材料储存罐，用于在其中容纳金属化合物材料; 以及用于打开/关闭气体通道的打开/关闭阀。

4. 发明申请

US20110265725A1 FILM DEPOSITION DEVICE AND SUBSTRATE PROCESSING DEVICE 审中-公开
标题翻译：薄膜沉积装置和基板处理装置
公开(公告)号：US20110265725A1
公开(公告)日：2011-11-03
申请号：US13120681
申请日：2009-09-25
申请人： Norihiko Tsuji , Masayuki Moroi , Kenichi Yanagitani , Yoshiyuki Hanada
发明人： Norihiko Tsuji , Masayuki Moroi , Kenichi Yanagitani , Yoshiyuki Hanada
IPC分类号： C23C16/455 , C23C16/46 , C23C16/458
CPC分类号： C23C16/54 , C23C16/0245 , C23C16/45551 , C23C16/4583 , H01L21/67005 , H01L21/67173 , H01L21/67201 , H01L21/67346 , H01L21/67706
摘要： A film deposition device includes a substrate transporting device arranged in a vacuum chamber to include a circulatory transport path in which substrate mounting parts arranged in a row are transported in a circulatory manner, the circulatory transport path including a linear transport path in which the substrate mounting parts are transported linearly. A first reactive gas supplying part is arranged along a transporting direction in which the substrate mounting parts are transported in the linear transport path, to supply a first reactive gas to the substrate mounting parts. A second reactive gas supplying part is arranged alternately with the first reactive gas supplying part along the transporting direction, to supply a second reactive gas to the substrate mounting parts. A separation gas supplying part is arranged to supply a separation gas to a space between the first reactive gas supplying part and the second reactive gas supplying part.
摘要翻译：一种成膜装置，其特征在于，具备：布置在真空室内的基板输送装置，包括循环输送路径，其中以循环方式输送排成行的基板安装部，所述循环输送路径包括线性输送路径，零件被线性运输。第一反应气体供给部沿着输送方向配置，在输送方向上，基板安装部在线性输送路径中输送，向基板安装部供给第一反应气体。第二反应气体供给部与输送方向的第一反应气体供给部交替配置，向基板安装部供给第二反应气体。分离气体供给部被配置为将分离气体供给到第一反应气体供给部和第二反应气体供给部之间的空间。

5. 发明申请

US20070163713A1 Gas supply system and processing system 审中-公开
标题翻译：供气系统及处理系统
公开(公告)号：US20070163713A1
公开(公告)日：2007-07-19
申请号：US10525207
申请日：2003-08-25
申请人： Shigeru Kasai , Sumi Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
发明人： Shigeru Kasai , Sumi Tanaka , Tetsuya Saito , Norihiko Yamamoto , Kenichi Yanagitani
IPC分类号： C23F1/00
CPC分类号： H01L21/67017 , C23C16/4481 , Y10T137/0324
摘要： A processing system that can supply a material gas produced inside a material reservoir tank into a processing apparatus while generating almost no pressure loss is provided. In a processing system comprising: a processing apparatus including a gas injection means 42 for injecting a specific material gas into a processing vessel 26 in order to provide specific processing to an object to be processed W, said material gas being produced from a metallic compound material M with low vapor pressure; and a gas supply system 24 for supplying said specific material gas to said gas injection means, said gas injection means is a shower head portion and said gas supply system provides: a gas passage 56 extending upwardly from said showerhead portion; a material reservoir tank 58 attached to the upper-end portion of said gas passage for containing said metallic compound material therein; and an open/close valve 60 for opening/closing said gas passage.
摘要翻译：提供了一种处理系统，其能够在几乎不产生压力损失的同时将材料储存罐内产生的原料气体提供到处理设备中。一种处理系统，包括：处理装置，包括用于将特定材料气体注入处理容器26中的气体注入装置42，以便对被处理物体W进行特定处理，所述原料气体由金属化合物材料 M蒸汽压低; 以及用于向所述气体注入装置供应所述特定材料气体的气体供应系统24，所述气体注入装置是淋浴喷头部分，所述气体供应系统提供：从所述喷头部分向上延伸的气体通道56; 附着在所述气体通道的上端部分的材料储存罐58，用于在其中容纳所述金属化合物材料; 以及用于打开/关闭所述气体通道的打开/关闭阀60。

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