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1. 发明授权

US5504020A Method for fabricating thin film transistor 失效
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US5504020A
公开(公告)日：1996-04-02
申请号：US307068
申请日：1994-09-16
申请人： Shigeru Aomori , Atsushi Yoshinouchi , Keiji Tarui , Tatsuo Morita
发明人： Shigeru Aomori , Atsushi Yoshinouchi , Keiji Tarui , Tatsuo Morita
IPC分类号： H01L21/266 , H01L21/223 , H01L21/265 , H01L21/30 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786
CPC分类号： H01L29/78675 , H01L21/2236 , H01L21/3003 , H01L27/1214 , H01L29/66757 , H01J2237/31701
摘要： A method for fabricating a thin film transistor includes the steps of: forming a semiconductor layer and a gate electrode on an insulating substrate with a gate insulating film interposed therebetween; and implanting an impurity element into a surface of the semiconductor layer by accelerating hydrogen ions and ions of an element of the group III or the group V of the periodic table using at least one of the gate electrode and a resist mask used for forming the gate electrode as a mask, so as to perform both formation of source and drain regions and hydrogenation of a channel region, wherein the concentration of hydrogen ions in the channel region of the semiconductor layer is regulated in the range of 1.times.10.sup.19 ions/cm.sup.3 to 1.times.10.sup.20 ions/cm.sup.3.
摘要翻译：一种制造薄膜晶体管的方法包括以下步骤：在绝缘基板上形成半导体层和栅电极，其间插有栅绝缘膜; 以及通过使用用于形成栅极的栅电极和抗蚀剂掩模中的至少一个来加速元素周期表中第III族元素或第V族元素的氢离子和离子，将杂质元素注入到半导体层的表面中电极作为掩模，以便同时进行源区和漏区的形成和沟道区的氢化，其中半导体层的沟道区中的氢离子的浓度在1×1019离子/ cm 3至1×1020离子的范围内 / cm3。

2. 发明授权

US4942481A Contact-type image sensor 失效
标题翻译：接触式图像传感器
公开(公告)号：US4942481A
公开(公告)日：1990-07-17
申请号：US217681
申请日：1988-07-11
申请人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto , Keiji Tarui , Satoshi Nishigaki
发明人： Atsushi Yoshinouchi , Masataka Itoh , Shuhei Tsuchimoto , Keiji Tarui , Satoshi Nishigaki
IPC分类号： H04N1/031 , H04N1/40
CPC分类号： H04N1/0312 , H04N1/0311 , H04N1/0316
摘要： A contact-type image sensor comprising a light source that illuminates the manuscript to be read; photodetectors that convert the light reflected by the manuscript into an electrical signal; a substrate that is disposed between the photodetectors and the manuscript; an optical fiber array that is constituted by a bundle of optical fibers that are buried in the substrate, the optical fiber array introducing the reflected light from the manuscript into the light-receiving surfaces of the photodetectors; and a light-absorbing substance that is disposed on the outer surface of each of the optical fibers, wherein the light-absorbing substance is disposed on the outer surface of each of the optical fibers, except for the region with a given length from the end of the optical fiber array that faces the manuscript.

3. 发明授权

US5403756A Method of producing a polycrystalline semiconductor film without annealing, for thin film transistor 失效
标题翻译：制造多晶半导体膜而不进行退火的方法，用于薄膜晶体管
公开(公告)号：US5403756A
公开(公告)日：1995-04-04
申请号：US158592
申请日：1993-11-24
申请人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
发明人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto , Yasuaki Murata
IPC分类号： H01L21/30 , H01L21/3215 , H01L21/336 , H01L21/266
CPC分类号： H01L29/66757 , H01L21/3003 , H01L21/32155
摘要： A method for producing a polycrystalline semiconductor film is disclosed. The method includes the steps of: forming a semiconductor film on a substrate; forming a passivation film on the semiconductor film; exciting a mixed gas including hydrogen and at least one element selected from the group consisting of the III, IV, and V groups of the periodic table to generate hydrogen ions and ions of the at least one element; and implanting the hydrogen ions into the semiconductor film through the passivation film and simultaneously implanting the ions of the at least one element into the semiconductor film through the passivation film, thereby changing the semiconductor film into a polycrystalline semiconductor film having the at least one element.
摘要翻译：公开了一种多晶半导体膜的制造方法。该方法包括以下步骤：在衬底上形成半导体膜; 在半导体膜上形成钝化膜; 激发包括氢和选自周期表的III，IV和V族的至少一种元素的混合气体，以产生至少一种元素的氢离子和离子; 以及通过钝化膜将氢离子注入到半导体膜中，同时通过钝化膜将至少一种元素的离子注入到半导体膜中，从而将半导体膜改变成具有至少一种元素的多晶半导体膜。

4. 发明授权

US5393986A Ion implantation apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5393986A
公开(公告)日：1995-02-28
申请号：US942663
申请日：1992-09-09
申请人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto
发明人： Atsushi Yoshinouchi , Tatsuo Morita , Shuhei Tsuchimoto
IPC分类号： C23C14/48 , C23C14/54 , H01J37/05 , H01J37/244 , H01J37/317 , H01L21/265
CPC分类号： H01J37/244 , H01J37/3171 , H01J2237/24485 , H01J2237/2449 , H01J2237/24507 , H01J2237/24585
摘要： An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.
摘要翻译：具有用于产生离子的等离子体源的离子注入装置，用于加速产生的离子的离子加速器以及设置在加速离子照射的位置上的基板保持器，其中通过电磁测量所需种类的离子的电流密度离子能量分析仪具有电场和磁场，从而控制离子的剂量。

5. 发明授权

US06890839B2 Method and apparatus for laser annealing configurations of a beam 有权
标题翻译：用于激光退火梁的构造的方法和装置
公开(公告)号：US06890839B2
公开(公告)日：2005-05-10
申请号：US10257460
申请日：2002-01-15
申请人： Norihito Kawaguchi , Kenichiro Nishida , Mikito Ishii , Takehito Yagi , Miyuki Masaki , Atsushi Yoshinouchi , Koichiro Tanaka
发明人： Norihito Kawaguchi , Kenichiro Nishida , Mikito Ishii , Takehito Yagi , Miyuki Masaki , Atsushi Yoshinouchi , Koichiro Tanaka
IPC分类号： A61B18/20 , B23K26/06 , B23K26/073 , H01L21/268 , H01S3/00 , H01L21/00 , H01L21/20 , H01L21/26 , H01L21/331
CPC分类号： H01S3/005 , B23K26/0732
摘要： An object of the present invention is to provide a laser annealing method and apparatus capable of performing uniform beam emission. By means of the present invention, uniform beam application to a sample can be achieved because a linear cross-sectional configuration can be created in an optical system with a beam having a Gaussian distribution while areas of strong light intensity are avoided by rotating the beam from a laser light source at a prescribed angle by means of rotating means even when the beam pattern of the beam from the laser light source has a non-uniform intensity distribution.
摘要翻译：本发明的一个目的是提供能够执行均匀的束发射的激光退火方法和装置。通过本发明，可以实现对样品的均匀波束施加，因为可以在具有高斯分布的光束的光学系统中产生线性横截面配置，而通过将光束从即使当来自激光光源的光束的光束图案具有不均匀的强度分布时，通过旋转装置以规定角度的激光光源。

6. 发明授权

US06621636B2 Laser irradiation apparatus and method of laser irradiation 有权
公开(公告)号：US06621636B2
公开(公告)日：2003-09-16
申请号：US10026340
申请日：2001-12-21
申请人： Koichiro Tanaka , Setsuo Nakajima , Takehito Yagi , Mikito Ishii , Kenichiro Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Koichiro Tanaka , Setsuo Nakajima , Takehito Yagi , Mikito Ishii , Kenichiro Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： G02B2710
CPC分类号： G02B27/108 , G02B27/145
摘要： A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.

7. 发明授权

US6130455A Semiconductor device, thin film transistor having an active crystal layer formed by a line containing a catalyst element 失效
标题翻译：半导体器件，具有由含有催化剂元素的线形成的活性晶体层的薄膜晶体管
公开(公告)号：US6130455A
公开(公告)日：2000-10-10
申请号：US825672
申请日：1997-03-20
申请人： Atsushi Yoshinouchi , Yasuaki Murata
发明人： Atsushi Yoshinouchi , Yasuaki Murata
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786 , H01C29/78
CPC分类号： H01L29/66757 , H01L21/2022
摘要： A semiconductor device includes: a substrate; a line formed on the substrate; and a crystalline semiconductor film containing silicon connected to the line. The crystalline semiconductor film is crystallized by annealing where a constituting material of the line functions as a catalyst.
摘要翻译：半导体器件包括：衬底; 形成在基板上的线; 以及含有与该线连接的硅的结晶半导体膜。结晶半导体膜通过退火结晶，其中线的构成材料用作催化剂。

8. 发明申请

US20100022102A1 LASER ANNEALING METHOD AND DEVICE 有权
标题翻译：激光退火方法和装置
公开(公告)号：US20100022102A1
公开(公告)日：2010-01-28
申请号：US11916687
申请日：2006-09-12
申请人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
发明人： Ryusuke Kawakami , Kenichirou Nishida , Norihito Kawaguchi , Miyuki Masaki , Atsushi Yoshinouchi
IPC分类号： H01L21/268 , H01L21/64
CPC分类号： H01L21/02675 , B23K26/0613 , B23K26/0732 , H01L21/0268 , H01L21/02691 , H01L21/268 , H01L27/1285 , H01L27/1296
摘要： A laser annealing method for executing laser annealing by irradiating a semiconductor film formed on a surface of a substrate with a laser beam, the method including the steps of, generating a linearly polarized rectangular laser beam whose cross section perpendicular to an advancing direction is a rectangle with an electric field directed toward a long-side direction of the rectangle or an elliptically polarized rectangular laser beam having a major axis directed toward a long-side direction, causing the rectangular laser beam to be introduced to the surface of the substrate, and setting a wavelength of the rectangular laser beam to a length which is about a desired size of a crystal grain in a standing wave direction.
摘要翻译：一种激光退火方法，用于通过用激光束照射形成在衬底的表面上的半导体膜来执行激光退火，所述方法包括以下步骤：产生线性偏振矩形激光束，其垂直于前进方向的截面为矩形具有朝向矩形的长边方向的电场或具有指向长边方向的长轴的椭圆偏振矩形激光束，使矩形激光束被引入到基板的表面，并且设定矩形激光束的波长长度大约为驻波方向的晶粒的期望尺寸。

9. 发明授权

US06835675B2 Laser-irradiation method and laser-irradiation device 失效
标题翻译：激光照射方法和激光照射装置
公开(公告)号：US06835675B2
公开(公告)日：2004-12-28
申请号：US10316605
申请日：2002-12-10
申请人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Shunpei Yamazaki , Satoshi Teramoto , Naoto Kusumoto , Takeshi Fukunaga , Setsuo Nakajima , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： H01L2126
CPC分类号： G10L17/22 , H01L27/1285 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H04M3/2281 , H04M3/229 , H04M3/382 , H04M3/385 , H04M2201/40 , H04Q3/0016
摘要： A laser-irradiation method which comprises a process for fabricating a semiconductor device, comprising: a first step of forming a thin film amorphous semiconductor on a substrate having an insulating surface; a second step of modifying the thin film amorphous semiconductor into a crystalline thin film semiconductor by irradiating a pulse-type linear light and/or by applying a heat treatment; a third step of implanting an impurity element which imparts a one conductive type to the crystalline thin film semiconductor; and a fourth step of activating the impurity element by irradiating a pulse-type linear light and/or by applying a heat treatment; wherein the peak value, the peak width at half height, and the threshold width of the laser energy in the second and the fourth steps above are each distributed within a range of approximately ±3% of the standard value. Also claimed is a laser irradiation device which realizes the method above.
摘要翻译：一种激光照射方法，包括制造半导体器件的工艺，包括：在具有绝缘表面的衬底上形成薄膜非晶半导体的第一步骤; 通过照射脉冲型线性光和/或通过施加热处理将薄膜非晶半导体改性成晶体薄膜半导体的第二步骤; 将赋予一种导电类型的杂质元素注入晶体薄膜半导体的第三步骤; 以及通过照射脉冲型线性光和/或通过施加热处理来激活杂质元素的第四步骤; 其中上述第二和第四步骤中的峰值，半高峰值宽度和激光能量的阈值宽度各自分布在标准值的约±3％的范围内。还要求保护的是实现上述方法的激光照射装置。

10. 发明授权

US06172671B2 Active matrix type display device and fabrication method of the same 有权
标题翻译：有源矩阵型显示装置及其制造方法
公开(公告)号：US06172671B2
公开(公告)日：2001-01-09
申请号：US09325260
申请日：1999-06-03
申请人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
发明人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
IPC分类号： G09G500
CPC分类号： G02F1/13454 , H01L27/1214 , H01L27/1259 , H01L27/1288
摘要： There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
摘要翻译：提供一种有源矩阵型显示器，其中具有所需特性的薄膜晶体管选择性地设置在像素矩阵部分和外围驱动电路部分中。在具有同一衬底上的像素矩阵部分和外围驱动电路部分的结构中，通过非自对准工艺形成的源极和漏极区域和通过自对准工艺形成的低浓缩杂质区域的N沟道型薄膜晶体管，在外围驱动电路部分的像素矩阵部分和N沟道驱动器部分中形成对准处理。在周边驱动电路部分的P沟道驱动器部分中形成P型沟道型薄膜晶体管，其中不形成低浓度杂质区，而仅通过自对准工艺形成源极和漏极区。

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