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1. 发明授权

US06172671B2 Active matrix type display device and fabrication method of the same 有权
标题翻译：有源矩阵型显示装置及其制造方法
公开(公告)号：US06172671B2
公开(公告)日：2001-01-09
申请号：US09325260
申请日：1999-06-03
申请人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
发明人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
IPC分类号： G09G500
CPC分类号： G02F1/13454 , H01L27/1214 , H01L27/1259 , H01L27/1288
摘要： There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
摘要翻译：提供一种有源矩阵型显示器，其中具有所需特性的薄膜晶体管选择性地设置在像素矩阵部分和外围驱动电路部分中。在具有同一衬底上的像素矩阵部分和外围驱动电路部分的结构中，通过非自对准工艺形成的源极和漏极区域和通过自对准工艺形成的低浓缩杂质区域的N沟道型薄膜晶体管，在外围驱动电路部分的像素矩阵部分和N沟道驱动器部分中形成对准处理。在周边驱动电路部分的P沟道驱动器部分中形成P型沟道型薄膜晶体管，其中不形成低浓度杂质区，而仅通过自对准工艺形成源极和漏极区。

2. 发明授权

US5923961A Method of making an active matrix type display 失效
标题翻译：制作有源矩阵型显示的方法
公开(公告)号：US5923961A
公开(公告)日：1999-07-13
申请号：US968025
申请日：1997-11-12
申请人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
发明人： Tsukasa Shibuya , Atsushi Yoshinouchi , Hongyong Zhang , Akira Takenouchi
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/786 , H01L21/339
CPC分类号： G02F1/13454 , H01L27/1214
摘要： There is provided an active matrix type display in which thin film transistors having required characteristics are provided selectively in a pixel matrix portion and a peripheral driving circuit portion. In a structure having the pixel matrix portion and the peripheral driving circuit portion on the same substrate, N-channel type thin film transistors having source and drain regions formed through a non-self-alignment process and low concentrate impurity regions formed through a self-alignment process are formed in the pixel matrix portion and in an N-channel driver portion of the peripheral driving circuit portion. A P-channel type thin film transistor in which no low concentrate impurity region is formed and source and drain regions are formed only through the self-alignment process is formed in a P-channel driver portion of the peripheral driving circuit portion.
摘要翻译：提供一种有源矩阵型显示器，其中具有所需特性的薄膜晶体管选择性地设置在像素矩阵部分和外围驱动电路部分中。在具有同一衬底上的像素矩阵部分和外围驱动电路部分的结构中，通过非自对准工艺形成的源极和漏极区域和通过自对准工艺形成的低浓缩杂质区域的N沟道型薄膜晶体管，在外围驱动电路部分的像素矩阵部分和N沟道驱动器部分中形成对准处理。在周边驱动电路部分的P沟道驱动器部分中形成P型沟道型薄膜晶体管，其中不形成低浓度杂质区，而仅通过自对准工艺形成源极和漏极区。

3. 发明授权

US5966193A LCD device having coupling capacitances and shielding films 失效
标题翻译： LCD装置具有耦合电容和屏蔽膜
公开(公告)号：US5966193A
公开(公告)日：1999-10-12
申请号：US891697
申请日：1997-07-11
申请人： Hongyong Zhang , Akira Takenouchi , Tadayoshi Miyamoto , Atsushi Yoshinouchi
发明人： Hongyong Zhang , Akira Takenouchi , Tadayoshi Miyamoto , Atsushi Yoshinouchi
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/786 , G02F1/1333
CPC分类号： G02F1/136209 , H01L27/1255
摘要： This invention is characterized by providing light shield patterning on a TFT substrate for an active matrix type liquid crystal display device. A liquid crystal display device comprising an active matrix circuit using a TFT having a top gate-type structure. The light-shield film are formed under a semiconductor layer and superposed at least one of the source bus line and the gate bus line. A capacitance is formed by the light-shield film and at least a part of the semiconductor layer with an insulating layer interposed therebetween.
摘要翻译：本发明的特征在于在有源矩阵型液晶显示装置的TFT基板上设置遮光图案。一种液晶显示装置，包括使用具有顶栅型结构的TFT的有源矩阵电路。遮光膜形成在半导体层之下，并且叠加在源极总线和栅极总线中的至少一个上。电容由遮光膜形成，半导体层的至少一部分隔着绝缘层形成。

4. 发明授权

US06433361B1 Semiconductor integrated circuit and method for forming the same 失效
标题翻译：半导体集成电路及其形成方法
公开(公告)号：US06433361B1
公开(公告)日：2002-08-13
申请号：US08999703
申请日：1997-02-05
申请人： Hongyong Zhang , Akira Takenouchi , Hideomi Suzawa
发明人： Hongyong Zhang , Akira Takenouchi , Hideomi Suzawa
IPC分类号： H01L2904
CPC分类号： H01L27/1214
摘要： In forming a thin film transistor (TFT), a semiconductor region is formed on a glass substrate and then a gate electrode is formed on the semiconductor region through an gate insulating film. After the gate electrode and a gate electrode arrangement extended from the gate electrode is anodized, insulators each having approximately rectangular shape are formed on side surfaces of the gate electrode and the gate electrode arrangement. An interlayer insulator is formed on a whole surface, and then the second layer arrangement is formed on the interlayer insulator. In an overlap portion in which the second layer arrangement overlaps the gate electrode and the gate electrode arrangement, since the insulators is formed, a slope is small.
摘要翻译：在形成薄膜晶体管（TFT）时，在玻璃基板上形成半导体区域，然后通过栅极绝缘膜在半导体区域上形成栅电极。在从栅电极延伸的栅极电极和栅极电极被阳极氧化之后，在栅电极和栅电极装置的侧表面上形成各自具有大致矩形形状的绝缘体。在整个表面上形成层间绝缘体，然后在层间绝缘体上形成第二层布置。在其中第二层布置与栅电极和栅电极布置重叠的重叠部分中，由于形成了绝缘体，所以斜率小。

5. 发明授权

US6159777A Method of forming a TFT semiconductor device 失效
标题翻译： TFT半导体器件的形成方法
公开(公告)号：US6159777A
公开(公告)日：2000-12-12
申请号：US967317
申请日：1997-10-28
申请人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
发明人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
IPC分类号： H01L21/265 , B23K26/073 , H01L21/268 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： H01L29/66757 , B23K26/0738 , Y10S117/904
摘要： An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step.
摘要翻译：描述了在玻璃基板上形成半导体器件的改进方法。该方法包括在玻璃基板上形成半导体膜，通过加热器将半导体膜加热到预定温度，在通过加热步骤将半导体膜加热到预定温度之后将半导体膜暴露于脉冲激光。由于预热步骤而导致的急剧的温度变化导致的热冲击减轻。

6. 发明授权

US5561081A Method of forming a semiconductor device by activating regions with a laser light 失效
标题翻译：用激光激活区域形成半导体器件的方法
公开(公告)号：US5561081A
公开(公告)日：1996-10-01
申请号：US190846
申请日：1994-02-03
申请人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
发明人： Akira Takenouchi , Atsunori Suzuki , Hideto Ohnuma , Hongyong Zhang , Shunpei Yamazaki
IPC分类号： H01L21/265 , B23K26/073 , H01L21/268 , H01L21/336 , H01L29/78 , H01L29/786 , H01L21/306
CPC分类号： H01L29/66757 , B23K26/0738 , Y10S117/904
摘要： An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light after the semiconductor film has been heated to the predetermined temperature by the heating step. The thermal shock due to sharp temperature change is lessened by the pre-heating step. The width of the pulsed laser light is greater than the height when a cross section is taken perpendicular to a length.
摘要翻译：描述了在玻璃基板上形成半导体器件的改进方法。该方法包括在玻璃基板上形成半导体膜，通过加热器将半导体膜加热到预定温度，在通过加热步骤将半导体膜加热到预定温度之后将半导体膜暴露于脉冲激光。由于预热步骤而导致的急剧的温度变化导致的热冲击减轻。脉冲激光的宽度大于垂直于长度的横截面时的高度。

7. 发明授权

US06388291B1 Semiconductor integrated circuit and method for forming the same 有权
公开(公告)号：US06388291B1
公开(公告)日：2002-05-14
申请号：US09484181
申请日：2000-01-18
申请人： Hongyong Zhang , Akira Takenouchi , Hideomi Suzawa
发明人： Hongyong Zhang , Akira Takenouchi , Hideomi Suzawa
IPC分类号： H01L2701
CPC分类号： H01L27/1214
摘要： In forming a thin film transistor (TFT), a semiconductor region is formed on a glass substrate and then a gate electrode is formed on the semiconductor region through an gate insulating film. After the gate electrode and a gate electrode arrangement extended from the gate electrode is anodized, insulators each having approximately rectangular shape are formed on side surfaces of the gate electrode and the gate electrode arrangement. An interlayer insulator is formed on a whole surface, and then the second layer arrangement is formed on the interlayer insulator. In an overlap portion in which the second layer arrangement overlaps the gate electrode and the gate electrode arrangement, since the insulators is formed, a slope is small.

8. 发明授权

US06329229B1 Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device 失效
标题翻译：半导体装置的处理方法，半导体处理装置及半导体装置的处理装置
公开(公告)号：US06329229B1
公开(公告)日：2001-12-11
申请号：US08962841
申请日：1997-11-03
申请人： Shunpei Yamazaki , Hiroyuki Shimada , Akira Takenouchi , Yasuhiko Takemura
发明人： Shunpei Yamazaki , Hiroyuki Shimada , Akira Takenouchi , Yasuhiko Takemura
IPC分类号： H01L21336
CPC分类号： H01L21/67167 , H01L21/268 , H01L21/67196 , H01L21/67213 , H01L21/84 , H01L29/66757
摘要： A multi-chamber system for providing a process of a high degree of cleanliness in fabricating semiconductor devices such as semiconductor integrated circuits. The system comprises a plurality of vacuum apparatus (e.g., a film formation apparatus, an etching apparatus, a thermal processing apparatus, and a preliminary chamber) for fabrication of semiconductor devices. At least one these vacuum apparatuses is a laser.
摘要翻译：一种用于在制造半导体集成电路的半导体器件中提供高度清洁度的工艺的多室系统。该系统包括用于制造半导体器件的多个真空装置（例如，成膜装置，蚀刻装置，热处理装置和预备室）。这些真空装置中至少有一个是激光。

9. 发明授权

US06210997B1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06210997B1
公开(公告)日：2001-04-03
申请号：US09362040
申请日：1999-07-28
申请人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
IPC分类号： H01L21336
CPC分类号： H01L27/1277 , H01L21/28158 , H01L27/1214 , H01L29/458 , H01L29/4908 , H01L29/66757
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide-film and the second oxide film are used as a gate insulating film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成半导体膜，在氧化气氛中用加热或照射的半导体膜氧化所述半导体膜的表面，并进一步在氧化表面上沉积氧化膜的半导体膜。第一氧化膜与半导体膜具有良好的界面条件，并且如果第一氧化膜和第二氧化物膜用作栅极绝缘膜，则可以改善绝缘栅场效应晶体管的特性。

10. 发明授权

US5966594A Semiconductor device and method for manufacturing the same 失效
公开(公告)号：US5966594A
公开(公告)日：1999-10-12
申请号：US768465
申请日：1996-12-18
申请人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
发明人： Hiroki Adachi , Akira Takenouchi , Takeshi Fukada , Hiroshi Uehara , Yasuhiko Takemura
IPC分类号： H01L21/28 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/45 , H01L29/49 , H01L21/00
CPC分类号： H01L29/66757 , H01L21/28158 , H01L27/1214 , H01L29/4908 , H01L29/458
摘要： A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.

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