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    • 7. 发明授权
    • Vertical heat processing apparatus and method for using the same
    • 立式热处理装置及其使用方法
    • US07575431B2
    • 2009-08-18
    • US11822282
    • 2007-07-03
    • Atsushi EndoYoshiyuki FujitaShinji Miyazaki
    • Atsushi EndoYoshiyuki FujitaShinji Miyazaki
    • F27D1/00
    • H01L21/67248F27B17/0025H01L21/67109H01L21/67115
    • A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.
    • 一种垂直加热装置,用于对多个目标基板进行热处理,所述垂直加热装置一起包括垂直处理容器,其构造成容纳所述目标基板并且在底部具有转移口; 保持器,被构造成在处理容器内沿垂直方向间隔地支撑目标基板; 以及加热器,其设置在所述处理容器的周围,并且被配置为通过所述处理容器的侧壁提供热射线,以便加热所述处理容器的内部。 加热器和处理容器的下端侧之间设置有热缓冲部件,以包围下端侧,并且构造为降低加工器和加工容器内的目标基板之间的热线的下端侧的透射率。
    • 8. 发明申请
    • Film forming system and film forming method
    • 成膜系统和成膜方法
    • US20060081181A1
    • 2006-04-20
    • US11229841
    • 2005-09-20
    • Shinji MiyazakiHiroki Fukushima
    • Shinji MiyazakiHiroki Fukushima
    • C23C16/00
    • C23C16/4405Y10S414/137Y10S414/138Y10S414/14
    • A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from the wafer boat. Subsequently, a clean gas jetting nozzle arranged in the loading area jets a clean gas toward the emptied wafer boat. Fragment of thin film which may readily peel off are blown away from the wafer boat, and are discharged out of the loading area together with the unidirectional flow. Thus, it is possible to avoid wafer contamination due to the unexpected peel-off of thin film fragments from the wafer boat.
    • 清洁气体循环通过垂直热处理炉下方的装载区域。 清洁气体单向流过装载区域。 在晶片处理完成之后,晶片舟从热处理炉降低到从晶片舟皿移除晶片的装载区域。 随后,布置在装载区域中的清洁气体喷射喷嘴将清洁气体朝排空的晶片舟喷射。 容易剥离的薄膜碎片从晶舟上吹走,并与单向流一起排出装载区域。 因此,可以避免由于来自晶片舟皿的薄膜碎片的意外剥离而造成的晶片污染。