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1. 发明授权

US07575431B2 Vertical heat processing apparatus and method for using the same 有权
标题翻译：立式热处理装置及其使用方法
公开(公告)号：US07575431B2
公开(公告)日：2009-08-18
申请号：US11822282
申请日：2007-07-03
申请人： Atsushi Endo , Yoshiyuki Fujita , Shinji Miyazaki
发明人： Atsushi Endo , Yoshiyuki Fujita , Shinji Miyazaki
IPC分类号： F27D1/00
CPC分类号： H01L21/67248 , F27B17/0025 , H01L21/67109 , H01L21/67115
摘要： A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.
摘要翻译：一种垂直加热装置，用于对多个目标基板进行热处理，所述垂直加热装置一起包括垂直处理容器，其构造成容纳所述目标基板并且在底部具有转移口; 保持器，被构造成在处理容器内沿垂直方向间隔地支撑目标基板; 以及加热器，其设置在所述处理容器的周围，并且被配置为通过所述处理容器的侧壁提供热射线，以便加热所述处理容器的内部。加热器和处理容器的下端侧之间设置有热缓冲部件，以包围下端侧，并且构造为降低加工器和加工容器内的目标基板之间的热线的下端侧的透射率。

2. 发明申请

US20080008566A1 Vertical heat processing apparatus and method for using the same 有权
标题翻译：立式热处理装置及其使用方法
公开(公告)号：US20080008566A1
公开(公告)日：2008-01-10
申请号：US11822282
申请日：2007-07-03
申请人： Atsushi Endo , Yoshiyuki Fujita , Shinji Miyazaki
发明人： Atsushi Endo , Yoshiyuki Fujita , Shinji Miyazaki
IPC分类号： H01L21/67 , F27D11/12
CPC分类号： H01L21/67248 , F27B17/0025 , H01L21/67109 , H01L21/67115
摘要： A vertical heat processing apparatus for performing a heat process on a plurality of target substrates all together includes a vertical process container configured to accommodate the target substrates and having a transfer port at a bottom; a holder configured to support the target substrates at intervals in a vertical direction inside the process container; and a heater disposed around the process container, and configured to supply heat rays through a sidewall of the process container, so as to heat an interior of the process container. A thermal buffer member is disposed between the heater and a lower end side of the process container to surround the lower end side, and is configured to decrease transmissibility of the lower end side for heat rays between the heater and target substrates inside the process container.
摘要翻译：一种垂直加热装置，用于对多个目标基板进行热处理，所述垂直加热装置一起包括垂直处理容器，其构造成容纳所述目标基板并且在底部具有转移口; 保持器，被构造成在处理容器内沿垂直方向间隔地支撑目标基板; 以及加热器，其设置在所述处理容器的周围，并且被配置为通过所述处理容器的侧壁提供热射线，以便加热所述处理容器的内部。加热器和处理容器的下端侧之间设置有热缓冲部件，以包围下端侧，并且构造为降低加工器和加工容器内的目标基板之间的热线的下端侧的透射率。

3. 发明授权

US5637153A Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus 失效
标题翻译：热处理设备中反应管和排气管道系统的清洗方法
公开(公告)号：US5637153A
公开(公告)日：1997-06-10
申请号：US429159
申请日：1995-04-26
申请人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
发明人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura , Hitoshi Kato
IPC分类号： C23C16/24 , C23C16/40 , C23C16/44 , B08B7/00 , B08B9/00
CPC分类号： C23C16/24 , C23C16/405 , C23C16/4405 , C23C16/4412
摘要： After a polysilicon film is formed on a wafer, a cleaning gas containing ClF.sub.3 at 10 to 50 vol % is supplied into a reaction tube and an exhaust pipe system at a flow rate of 3000 to 3500 SCCM, so as to remove a polysilicon-based film deposited on an inner wall surface of the reaction tube, the surface of a member incorporated in the reaction tube, and an inner wall surface of the exhaust pipe system while the film forming process, by etching using ClF.sub.3. The cleaning gas is supplied while the temperature in the reaction tube is maintained at 450.degree. C. or higher, and in a pressure condition set at the maintained temperature such that an etching rate of the polysilicon-based film by the cleaning gas is higher than an etching rate of silicon which is the material of the reaction tube or the member incorporated in the reaction tube.
摘要翻译：在晶片上形成多晶硅膜之后，将含有10〜50体积％的ClF 3的清洗气体以3000〜3500SCCM的流量供给反应管和排气管系，以除去多晶硅通过使用ClF 3的蚀刻，沉积在反应管的内壁表面上的薄膜，在反应管中结合的构件的表面和排气管系统的内壁表面。在将反应管中的温度保持在450℃以上，在设定为维持温度的压力条件下，通过清洗气体使多晶硅系膜的蚀刻速度高于作为反应管的材料或结合在反应管中的构件的硅的蚀刻速率。

4. 发明授权

US5380370A Method of cleaning reaction tube 失效
标题翻译：反应管清洗方法
公开(公告)号：US5380370A
公开(公告)日：1995-01-10
申请号：US54229
申请日：1993-04-30
申请人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura
发明人： Reiji Niino , Yoshiyuki Fujita , Hideki Lee , Yasuo Imamura , Toshiharu Nishimura , Yuuichi Mikata , Shinji Miyazaki , Takahiko Moriya , Katsuya Okumura
IPC分类号： B08B9/032 , C23C16/24 , C23C16/40 , C23C16/44 , B08B7/00 , B08B9/00
CPC分类号： C23C16/24 , C23C16/405 , C23C16/4405 , C23C16/4412
摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.
摘要翻译：在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面反应管通过使用ClF3进行蚀刻。在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

5. 发明申请

US20060081181A1 Film forming system and film forming method 有权
标题翻译：成膜系统和成膜方法
公开(公告)号：US20060081181A1
公开(公告)日：2006-04-20
申请号：US11229841
申请日：2005-09-20
申请人： Shinji Miyazaki , Hiroki Fukushima
发明人： Shinji Miyazaki , Hiroki Fukushima
IPC分类号： C23C16/00
CPC分类号： C23C16/4405 , Y10S414/137 , Y10S414/138 , Y10S414/14
摘要： A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from the wafer boat. Subsequently, a clean gas jetting nozzle arranged in the loading area jets a clean gas toward the emptied wafer boat. Fragment of thin film which may readily peel off are blown away from the wafer boat, and are discharged out of the loading area together with the unidirectional flow. Thus, it is possible to avoid wafer contamination due to the unexpected peel-off of thin film fragments from the wafer boat.
摘要翻译：清洁气体循环通过垂直热处理炉下方的装载区域。清洁气体单向流过装载区域。在晶片处理完成之后，晶片舟从热处理炉降低到从晶片舟皿移除晶片的装载区域。随后，布置在装载区域中的清洁气体喷射喷嘴将清洁气体朝排空的晶片舟喷射。容易剥离的薄膜碎片从晶舟上吹走，并与单向流一起排出装载区域。因此，可以避免由于来自晶片舟皿的薄膜碎片的意外剥离而造成的晶片污染。

6. 发明授权

US6044044A Magneto-optical recording medium having an enlarged magnetic domain in the amplifier layer during read-out 失效
标题翻译：在读出期间放大器层中具有放大的磁畴的磁光记录介质
公开(公告)号：US6044044A
公开(公告)日：2000-03-28
申请号：US106089
申请日：1998-06-29
申请人： Shinji Miyazaki , Hiroyasu Inoue , Jiro Yoshinari
发明人： Shinji Miyazaki , Hiroyasu Inoue , Jiro Yoshinari
IPC分类号： G11B11/10 , G11B11/105 , G11B11/00
CPC分类号： G11B11/10515 , G11B11/10584 , G11B11/10586
摘要： A magneto-optical recording medium comprises a substrate, and a magnetic multilayer 4 on a surface side thereof. The magnetic multilayer comprises an amplifying layer A.sub.1 and a recording layer R.sub.2 which are laminated together and are each a magnetic layer. A nonmagnetic intermediate layer I.sub.12 is interleaved between the amplifying layer A.sub.1 and the recording layer R.sub.2 to couple them magnetostatically. The nonmagnetic intermediate layer I.sub.12 is made up of a metal oxide and has a thickness of 2 to 30 nm. The magnetic field intensity needed for magnetic field modulation reading or light modulation reading can be lowered.
摘要翻译：磁光记录介质包括基板和表面侧上的磁性多层体4。磁性层叠体包括层压在一起并分别为磁性层的放大层A1和记录层R2。非磁性中间层I12在放大层A1和记录层R2之间进行交织，使其静磁耦合。非磁性中间层I12由金属氧化物构成，厚度为2〜30nm。可以降低磁场调制读取或光调制读取所需的磁场强度。

7. 发明授权

US5674637A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5674637A
公开(公告)日：1997-10-07
申请号：US360964
申请日：1994-12-21
申请人： Shinji Miyazaki , Jiro Yoshinari , Koji Kobayashi
发明人： Shinji Miyazaki , Jiro Yoshinari , Koji Kobayashi
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , Y10S428/90
摘要： A magnetic recording medium having excellent electromagnetic characteristics, still characteristics and cupping resistance, reduced rust generation and increased durability, comprises a non-magnetic substrate and a magnetic layer formed thereon by oblique deposition, the magnetic layer being composed of at least two ferromagnetic metal thin films containing Co and Ni as main components, in which the Co content of the thin film closest to the substrate is less than 70 atomic per cent and the Co content of the film farthest from the substrate is 75 atomic per cent or more.
摘要翻译：具有优异的电磁特性，静电特性和耐拔罐性，减少生锈和提高耐久性的磁记录介质包括非磁性基板和通过倾斜沉积在其上形成的磁性层，磁性层由至少两个铁磁性金属薄层含有Co和Ni作为主要成分的膜，其中最接近基底的薄膜的Co含量小于70原子％，并且离基材最远的膜的Co含量为75原子％以上。

8. 发明授权

US5549979A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5549979A
公开(公告)日：1996-08-27
申请号：US159422
申请日：1993-11-29
申请人： Shinji Miyazaki , Mitsuru Takai , Koji Kobayashi
发明人： Shinji Miyazaki , Mitsuru Takai , Koji Kobayashi
IPC分类号： C23C14/06 , G11B5/64 , G11B5/66 , G11B5/73 , G11B5/738 , G11B5/84 , G11B5/85 , H01F10/16 , H01F41/20
CPC分类号： G11B5/7325 , G11B5/66 , G11B5/8404 , Y10S428/90 , Y10T428/12931 , Y10T428/30
摘要： A magnetic recording medium comprising a nonmagnetic base, an SiO.sub.x (x=1.2-1.95) undercoat, an under-layer ferromagnetic metal film consisting of a Co--Ni alloy, an SiO.sub.x (x=1.2-1.95) intermediate layer, an upper-layer ferromagnetic metal protective film consisting of a Co--Ni alloy, a diamond-like carbon protective film, and a lubricant layer, formed in the order of mention, the angles of vapor deposition as measured from lines normal to the upper- and under-layer ferromagnetic metal films being all decreasing toward the upper surfaces. The magnetic recording medium is made by forming an SiO.sub.x (x=1.2-1.95) undercoat by vapor deposition on a flexible nonmagnetic base being fed, forming an under-layer ferromagnetic metal film by vapor deposition of a Co--Ni alloy at a large deposition angle on the supply side and at a small deposition angle on the take up side, rewinding the semi-finished product thus obtained, repeating the foregoing process steps, forming a diamond-like carbon protective film, and further forming a lubricant layer over the diamond-like carbon protective film, all within a vacuum chamber.
摘要翻译：包含非磁性基底，SiOx（x = 1.2-1.95）底涂层的磁记录介质，由Co-Ni合金，SiOx（x = 1.2-1.95）中间层构成的底层强磁性金属膜，由Co-Ni合金，类金刚石碳保护膜和润滑剂层构成的层状铁磁性金属保护膜，按顺序形成，从垂直于上，下的线的线测得的蒸镀角度，层铁磁性金属膜全部向上表面减小。磁记录介质是通过气相沉积形成SiOx（x = 1.2-1.95）底涂层而制成的，该柔性非磁性基体被馈送，通过Co-Ni合金在大量沉积下气相沉积形成底层强磁性金属膜在供给侧的角度和在卷绕侧的小沉积角度，重新卷绕由此获得的半成品，重复上述工艺步骤，形成类金刚石碳保护膜，并进一步在金刚石上形成润滑剂层样的碳保护膜，都在真空室内。

9. 发明授权

US08900797B2 Developable bottom anti-reflective coating 有权
标题翻译：可开发的底部防反射涂层
公开(公告)号：US08900797B2
公开(公告)日：2014-12-02
申请号：US13627599
申请日：2012-09-26
申请人： Shigemasa Nakasugi , Shinji Miyazaki , Munirathna Padmanaban , Alberto D. Dioses
发明人： Shigemasa Nakasugi , Shinji Miyazaki , Munirathna Padmanaban , Alberto D. Dioses
IPC分类号： C07D251/38 , C07D213/69 , C07D213/70 , C07D239/60 , C07D251/30 , G03F7/004 , G03F7/20
CPC分类号： G03F7/038 , C07D251/30 , C07D251/38 , G03F7/091
摘要： The present invention provides a cross-linking agent capable of preventing formation of scum from a bottom anti-reflective coating, and also provides a composition for forming a bottom anti-reflection coating containing the agent. The cross-linking agent is a nitrogen-containing aromatic compound having at least one vinyloxy group or N-methoxymethylamide group, and the composition contains the cross-linking agent. The cross-linking agent of the formula (1) can be produced by reaction of a nitrogen-containing aromatic compound, a halogen compound having a vinyloxy group or N-methoxymethylamide group and a basic compound.
摘要翻译：本发明提供能够防止从底部抗反射涂层形成浮渣的交联剂，并且还提供了用于形成含有该试剂的底部防反射涂层的组合物。交联剂是具有至少一个乙烯基氧基或N-甲氧基甲基酰胺基的含氮芳香族化合物，该组合物含有交联剂。式（1）的交联剂可以通过含氮芳族化合物，具有乙烯氧基的卤素化合物或N-甲氧基甲基酰胺基和碱性化合物的反应来制备。

10. 发明授权

US07935185B2 Film forming system and film forming method 有权
标题翻译：成膜系统和成膜方法
公开(公告)号：US07935185B2
公开(公告)日：2011-05-03
申请号：US11229841
申请日：2005-09-20
申请人： Shinji Miyazaki , Hiroki Fukushima
发明人： Shinji Miyazaki , Hiroki Fukushima
IPC分类号： C23C16/00 , F27D3/12
CPC分类号： C23C16/4405 , Y10S414/137 , Y10S414/138 , Y10S414/14
摘要： A clean gas circulates to pass through a loading area provided below a vertical heat treatment furnace. The clean gas unidirectionally flows through the loading area. After completion of wafer processing, a wafer boat lowers from the heat treatment furnace to the loading area, where the wafers are removed from the wafer boat. Subsequently, a clean gas jetting nozzle arranged in the loading area jets a clean gas toward the emptied wafer boat. Fragment of thin film which may readily peel off are blown away from the wafer boat, and are discharged out of the loading area together with the unidirectional flow. Thus, it is possible to avoid wafer contamination due to the unexpected peel-off of thin film fragments from the wafer boat.
摘要翻译：清洁气体循环通过垂直热处理炉下方的装载区域。清洁气体单向流过装载区域。在晶片处理完成之后，晶片舟从热处理炉降低到从晶片舟皿移除晶片的装载区域。随后，布置在装载区域中的清洁气体喷射喷嘴将清洁气体朝排空的晶片舟喷射。容易剥离的薄膜碎片从晶舟上吹走，并与单向流一起排出装载区域。因此，可以避免由于来自晶片舟皿的薄膜碎片的意外剥离而造成的晶片污染。

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