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1. 发明授权

US4929572A Dopant of arsenic, method for the preparation thereof and method for doping of semiconductor therewith 失效
标题翻译：砷的掺杂剂，其制备方法和掺杂半导体的方法
公开(公告)号：US4929572A
公开(公告)日：1990-05-29
申请号：US380616
申请日：1989-07-17
申请人： Shigeaki Saito , Toshiharu Matsueda , Yoshihiro Kubota , Masaaki Iguchi
发明人： Shigeaki Saito , Toshiharu Matsueda , Yoshihiro Kubota , Masaaki Iguchi
IPC分类号： H01L21/22 , H01L21/223
CPC分类号： H01L21/223 , H01L21/2225 , Y10S252/95
摘要： The dopant body of arsenic for doping of a semiconductor substrate, e.g., silicon wafer, is a sintered body of a powder mixture comprising silicon arsenide, silica and, optionally, arsenic oxide in a specified proportion. The dopant body can be easily prepared and has various advantages over conventional elementary arsenic powder or a shaped body of silicon arsenide alone in respect of the high mechanical strength of the dopant body and absence of the problem of environmental contamination.
摘要翻译：用于掺杂半导体衬底（例如硅晶片）的砷的掺杂剂体是包含砷化硅，二氧化硅和任选地以特定比例的氧化砷的粉末混合物的烧结体。相对于掺杂剂体的高机械强度和不存在环境污染的问题，掺杂剂体可以容易地制备并且具有优于常规的基本砷粉末或单独的砷化硅成形体的各种优点。

2. 发明授权

US5234742A Pellicle for lithography 失效
标题翻译：光刻胶片
公开(公告)号：US5234742A
公开(公告)日：1993-08-10
申请号：US902407
申请日：1992-06-19
申请人： Etsuo Hatano , Yoshihiro Kubota , Akira Yamamoto , Toyohisa Sakurada , Masaaki Iguchi
发明人： Etsuo Hatano , Yoshihiro Kubota , Akira Yamamoto , Toyohisa Sakurada , Masaaki Iguchi
IPC分类号： G03F1/62
CPC分类号： G03F1/62 , Y10T428/24777 , Y10T428/31663 , Y10T428/31678
摘要： A pellicle for lithography based on the exposure method especially adapted for lithographic lights having wave lengths of 500 nm or smaller, characterized in that the pellicle film is made of a high polymer organic silicon compound, preferably of a general molecular formula: ##STR1## where R.sup.1, R.sup.2, and R.sup.3 are the same or different alkyl groups having one to eight carbon atoms, and n is an integer between 100 and 40,000.
摘要翻译：一种基于曝光方法的用于光刻的防护薄膜组件，特别适用于波长为500nm或更小的光刻胶，其特征在于防护薄膜由高分子有机硅化合物制成，优选具有以下通式： R1，R2和R3是具有1-8个碳原子的相同或不同的烷基，n是100至40,000的整数。

3. 发明授权

US4776917A Single crystal wafer of lithium tantalate 失效
标题翻译：钽酸锂单晶晶片
公开(公告)号：US4776917A
公开(公告)日：1988-10-11
申请号：US22591
申请日：1987-03-04
申请人： Masahiro Ogihara , Shinji Makikawa , Masaaki Iguchi
发明人： Masahiro Ogihara , Shinji Makikawa , Masaaki Iguchi
IPC分类号： C30B29/30 , C30B15/00 , H01L41/18 , H03H9/02 , C30B33/00
CPC分类号： H03H9/02968 , C30B15/00 , C30B29/30 , H01L41/18 , H03H9/02559 , Y10T29/42
摘要： The single crystal wafer of lithium tantalate provided by the invention is characterized by the limited range of variation of the value of double refraction which should not exceed .+-.6.times.10.sup.-4 so that the value of the double refraction is given by 4.5.times.10.sup.-3 .+-.6.times.10.sup.-4. When single crystal wafers of lithium tantalate each satisfying the above requirements are used for the manufacture of SAW devices, the devices may have a very small deviation of the SAW sound velocity from the standard value and the range of variation of the SAW sound velocity within a wafer is also very small so that the SAW devices can be manufactured with greatly improved productivity and excellent quality.
摘要翻译：由本发明提供的钽酸锂单晶晶片的特征在于双折射值的变化范围不能超过+/- 6×10 -4，使得双折射值由4.5×10 -3 +/- 6x10-4。当满足上述要求的钽酸锂的单晶晶片用于制造SAW器件时，器件可能具有非常小的SAW声速与标准值的偏差和SAW声速的变化范围晶片也非常小，使得SAW器件可以以大大提高的生产率和优良的品质制造。

4. 发明授权

US4001010A Method for processing reduced iron 失效
标题翻译：加工减少铁的方法
公开(公告)号：US4001010A
公开(公告)日：1977-01-04
申请号：US500684
申请日：1974-08-26
申请人： Kenjiro Kanbara , Masayuki Hattori , Satoru Miyasita , Masaaki Iguchi , Jihei Yoda
发明人： Kenjiro Kanbara , Masayuki Hattori , Satoru Miyasita , Masaaki Iguchi , Jihei Yoda
IPC分类号： C21B13/00 , C21B13/02
CPC分类号： C21B13/0073 , C21B13/0086 , Y02P10/122 , Y02P10/136
摘要： Method and apparatus for processing reduced iron in which granular iron oxide charged into a vertical furnace is reduced by a reducing gas comprising mainly carbon monoxide and hydrogen, a substantial portion of the waste gas generated in the reduction process being regenerated in a recirculating system. The reduced iron which has been reduced in the vertical furnace is continuously discharged at a temperature above 500.degree. C under isolation from the exterior atmosphere and is received in a plurality of air tight, sealable component adjusting receptacles. The reduced iron received in the receptacles is subjected to component adjustment at a temperature ranging from 700.degree. to 1100.degree. C by using the regenerated reducing gas and, thereafter, it is discharged from the receptacles under isolation from the exterior atmosphere so as to be received in air tight sealable cooling receptacles thereby cooling the same to a temperature lower than 100.degree. C, the reduced iron being thereafter discharged from the receptacles.

5. 发明授权

US4898641A Single crystal wafer of lithium tantalate 失效
标题翻译：钽酸锂单晶晶片
公开(公告)号：US4898641A
公开(公告)日：1990-02-06
申请号：US221325
申请日：1988-07-19
申请人： Masahiro Ogihara , Shinji Makikawa , Masaaki Iguchi
发明人： Masahiro Ogihara , Shinji Makikawa , Masaaki Iguchi
IPC分类号： C30B29/30 , C30B15/00 , H01L41/18 , H03H9/02
CPC分类号： H03H9/02968 , C30B15/00 , C30B29/30 , H01L41/18 , H03H9/02559 , Y10T29/42
摘要： The single crystal wafer of lithium tantalate provided by the invention is characterized by the limited range of variation of the value of double refraction which should not exceed .+-.6.times.10.sup.-4 so that the value of the double refraction is given by 4.5.times.10.sup.-3 .+-.6.times.10.sup.-4. When single crystal wafers of lithium tantalate each satisfying the above requirements are used for the manufacture of SAW devices, the devices may have a very small deviation of the SAW sound velocity from the standard value and the range of variation of the SAW sound velocity within a wafer is also very small so that the SAW devices can be manufactured with greatly improved productivity and excellent quality.

6. 发明授权

US4755314A Single crystal wafer of lithium tantalate 失效
标题翻译：钽酸锂单晶晶片
公开(公告)号：US4755314A
公开(公告)日：1988-07-05
申请号：US804188
申请日：1985-12-03
申请人： Susumu Sakaguchi , Masaaki Iguchi
发明人： Susumu Sakaguchi , Masaaki Iguchi
IPC分类号： H03H9/17 , C30B33/00 , H01L41/18 , C01G35/00 , C30B15/00 , H01L41/22
CPC分类号： C30B33/00 , C30B29/30 , H01L2223/54493
摘要： The x-cut single crystal wafer of lithium tantalate according to the invention is characterized by the orientation flat formed in a specific crystallographic orientation. The plane of the orientation flat should be (A) in parallel with the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the (018) plane or (B) in parallel with a plane which is in parallel with the x-axis and perpendicular to the (018) plane or a plane which is in parallel with the x-axis and makes an angle of 15.degree. or smaller with the plane which is in parallel with the x-axis and perpendicular to the (018) plane. In contrast to conventional lithium tantalate single crystal wafers provided with an orientation flat in a direction parallel to the 112.degree. Y direction, the location of the crystallographic orientation of the orientation flat is very easy and consequently great advantages are obtained in the working efficiency of locating the direction of the orientation flat and improved quality as well as increased yield of acceptable devices, e.g. SAW filters, prepared from the wafers.
摘要翻译：根据本发明的钽酸锂的x切割单晶晶片的特征在于以特定的晶体取向形成的取向平面。取向平面的平面应为与（018）平面平行的（A）平面或与x轴平行的平面，与（018）面成15度或更小的平面或（B）平行于与x轴平行且垂直于（018）平面的平面或与x轴平行的平面，并且与平行的平面成15度或更小的平面与x轴垂直于（018）平面。与常规的钽酸锂单晶晶片相比，在平行于112°Y方向的方向上具有取向平坦的方向，取向平面的晶体取向的位置非常容易，因此在定位的工作效率方面获得了很大的优点取向平坦的方向和改善的质量以及可接受的装置的增加的产量，例如 SAW滤波器，由晶圆制成。

7. 发明授权

US4483734A Method for the preparation of single crystals of gadolinium gallium garnet 失效
标题翻译：钆镓石榴石单晶的制备方法
公开(公告)号：US4483734A
公开(公告)日：1984-11-20
申请号：US485903
申请日：1983-04-18
申请人： Susumu Sakaguchi , Kazuyoshi Watanabe , Masahiro Ogihara , Toshihiko Ryuoh , Masaaki Iguchi , Norifumi Yoshida
发明人： Susumu Sakaguchi , Kazuyoshi Watanabe , Masahiro Ogihara , Toshihiko Ryuoh , Masaaki Iguchi , Norifumi Yoshida
IPC分类号： C30B15/00 , C30B15/04
CPC分类号： C30B15/00 , C30B29/28
摘要： In the crystal growing of GGG (gadolinium gallium garnet) by the Czochralski technique from a melt of the oxide mixture of gadolinium and gallium, zinc is added to the oxide melt as a dopant element in a limited amount so that the danger of crack formation in the grown single crystals can be greatly decreased contributing to the improvement of the productivity. Moreover, the GGG single crystal grown with zinc doping has remarkably reduced light absorption in the wavelength region of around 300 nm responsible to the yellowish tint of the crystals.
摘要翻译：在钆和镓的氧化物混合物的熔融物中通过切克劳斯基技术从GGG（钆镓石榴石）中生长晶体，将锌作为掺杂剂元素以有限的量添加到氧化物熔体中，使得形成裂纹的危险生长的单晶可以大大降低有助于提高生产率。此外，用锌掺杂生长的GGG单晶在大约300nm的波长区域中显着降低了对结晶的淡黄色的影响。

8. 发明授权

US4412886A Method for the preparation of a ferroelectric substrate plate 失效
标题翻译：铁电基板的制备方法
公开(公告)号：US4412886A
公开(公告)日：1983-11-01
申请号：US481823
申请日：1983-04-04
申请人： Susumu Sakaguchi , Kenichi Taguchi , Masaaki Iguchi , Kunihiro Ito
发明人： Susumu Sakaguchi , Kenichi Taguchi , Masaaki Iguchi , Kunihiro Ito
IPC分类号： H03H3/08 , C30B33/00 , C30B33/10 , H01B3/00 , H01L21/00 , H01L21/304 , H01L41/22 , B44C1/22 , C03C15/00 , C03C25/06 , H01L21/306
CPC分类号： H01L21/67092 , H01L41/335 , H01L41/1873 , H01L41/41
摘要： The invention provides a method for surface-finishing of a single crystal wafer of a ferroelectric material into a substrate plate suitable for use, for example, as a SAW filter element which is mirror-polished only on one of the surfaces, the other surface having an adequate roughness. Different from conventional methods, the inventive method comprises the successive steps of (a) slicing a single crystal boule into wafers, (b) lapping of the wafer on both surfaces to impart adequate roughness to the surfaces, (c) chemically etching the thus lapped surfaces to remove the strain produced in the preceding mechanical working, and (d) mirror-polishing one of the thus etched surfaces so that high uniformity of the thickness and greatly decreased warping of the wafer can be ensured.
摘要翻译：本发明提供了一种用于将铁电材料的单晶晶片表面精加工成衬底板的方法，该衬底板适用于例如仅在一个表面上被镜面抛光的SAW滤波器元件，另一个表面具有足够的粗糙度。本发明的方法包括以下连续步骤：（a）将单晶晶片切成晶片，（b）在两个表面上研磨晶片以赋予表面足够的粗糙度，（c）化学蚀刻如此重叠的表面以去除在前面的机械加工中产生的应变，以及（d）对这样蚀刻的表面之一进行镜面抛光，从而可以确保厚度的均匀性和晶片的翘曲大大降低。

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