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    • 3. 发明授权
    • Process integration of Si1-xGex CMOS with Si1-xGex relaxation after STI formation
    • STI形成后Si1-xGex CMOS与Si1-xGex弛豫过程的整合
    • US06583000B1
    • 2003-06-24
    • US10072183
    • 2002-02-07
    • Sheng Teng HsuJong-Jan LeeJer-shen MaaDouglas James Tweet
    • Sheng Teng HsuJong-Jan LeeJer-shen MaaDouglas James Tweet
    • H01L218238
    • H01L21/823807H01L21/76224H01L21/823878
    • A method of forming a CMOS device includes preparing a silicon substrate, including forming plural device regions on the substrate; epitaxially forming a strained SiGe layer on the substrate, wherein the SiGe layer has a germanium content of between about 20% and 40%; forming a silicon cap layer epitaxially on the SiGe layer; depositing a gate oxide layer; depositing a first polysilicon layer; implanting H+ ions to a depth below the SiGe layer; forming a trench by shallow trench isolation which extends into the substrate; annealing the structure at a temperature of between about 700° C. to 900° C. for between about five minutes to sixty minutes; depositing an oxide layer and a second polysilicon layer, thereby filling the trench; planarizing the structure to the top of the level of the portion of the second polysilicon layer which is located in the trench; and completing the CMOS device.
    • 形成CMOS器件的方法包括制备硅衬底,包括在衬底上形成多个器件区域; 在衬底上外延地形成应变SiGe层,其中SiGe层的锗含量在约20%和40%之间; 在SiGe层上外延地形成硅帽层; 沉积栅氧化层; 沉积第一多晶硅层; 将H +离子注入SiGe层以下的深度; 通过延伸到衬底中的浅沟槽隔离形成沟槽; 在约700℃至900℃的温度下退火结构约5分钟至60分钟; 沉积氧化物层和第二多晶硅层,从而填充沟槽; 将结构平面化到位于沟槽中的第二多晶硅层的部分的顶部的顶部; 并完成CMOS设备。
    • 5. 发明申请
    • CMOS Active Pixel Sensor
    • CMOS有源像素传感器
    • US20080303072A1
    • 2008-12-11
    • US12178169
    • 2008-07-23
    • Jong-Jan LeeSheng Teng HsuDouglas James TweetJer-Shen Maa
    • Jong-Jan LeeSheng Teng HsuDouglas James TweetJer-Shen Maa
    • H01L31/113
    • H01L27/14647
    • A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.
    • CMOS有源像素传感器包括具有在其上形成有绝缘体层的硅衬底和形成在绝缘体层上的顶部硅层的绝缘体上硅衬底。 层叠像素传感器单元包括:制造在硅衬底上的底部光电二极管,用于感测最长波长的光; 制造在硅衬底上的中间光电二极管,用于感测中等波长的光; 和制造在顶部硅层上的顶部光电二极管,用于感测较短波长的光,该光被层叠在中间和底部光电二极管的上方。 像素晶体管组被制造在顶部硅层上,并且通过在每个光电二极管和相应的像素晶体管之间延伸的电连接与每个像素传感器单元相关联。 CMOS控制电路与有源像素传感器单元的阵列相邻并且与其电连接。
    • 8. 发明授权
    • CMOS active pixel sensor
    • CMOS有源像素传感器
    • US07800148B2
    • 2010-09-21
    • US12178169
    • 2008-07-23
    • Jong-Jan LeeSheng Teng HsuDouglas James TweetJer-Shen Maa
    • Jong-Jan LeeSheng Teng HsuDouglas James TweetJer-Shen Maa
    • H01L31/062
    • H01L27/14647
    • A CMOS active pixel sensor includes a silicon-on-insulator substrate having a silicon substrate with an insulator layer formed thereon and a top silicon layer formed on the insulator layer. A stacked pixel sensor cell includes a bottom photodiode fabricated on the silicon substrate, for sensing light of a longest wavelength; a middle photodiode fabricated on the silicon substrate, for sensing light of a medium wavelength, which is stacked above the bottom photodiode; and a top photodiode fabricated on the top silicon layer, for sensing light of a shorter wavelength, which is stacked above the middle and bottom photodiodes. Pixel transistor sets are fabricated on the top silicon layer and are associated with each pixel sensor cell by electrical connections which extend between each of the photodiodes and respective pixel transistor(s). CMOS control circuitry is fabricated adjacent to an array of active pixel sensor cells and electrically connected thereto.
    • CMOS有源像素传感器包括具有在其上形成有绝缘体层的硅衬底和形成在绝缘体层上的顶部硅层的绝缘体上硅衬底。 层叠像素传感器单元包括:制造在硅衬底上的底部光电二极管,用于感测最长波长的光; 制造在硅衬底上的中间光电二极管,用于感测中等波长的光; 和制造在顶部硅层上的顶部光电二极管,用于感测较短波长的光,该光被层叠在中间和底部光电二极管的上方。 像素晶体管组被制造在顶部硅层上,并且通过在每个光电二极管和相应的像素晶体管之间延伸的电连接与每个像素传感器单元相关联。 CMOS控制电路与有源像素传感器单元的阵列相邻并且与其电连接。