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1. 发明专利

JP2013120829A Nitride semiconductor ultraviolet light-emitting device 审中-公开
标题翻译： NITRIDE SEMICONDUCTOR ULTRAVIOLET LED发光设备
公开(公告)号：JP2013120829A
公开(公告)日：2013-06-17
申请号：JP2011267762
申请日：2011-12-07
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAMOTO HIDEICHIRO , HIRUKAWA SHUICHI , OTA MASATAKA
IPC分类号： H01L33/42 , H01L33/32 , H01L33/36
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor ultraviolet light-emitting device having improved light emission intensity.SOLUTION: The nitride semiconductor ultraviolet light-emitting device comprises: one or more first conductive type nitride semiconductor layers; a light-emitting layer of a nitride semiconductor; one or more second conductive type nitride semiconductor layers; and a translucent conductive film which is a crystallized MgZnO (0
摘要翻译：要解决的问题：提供具有改善的发光强度的氮化物半导体紫外线发光器件。解决方案：氮化物半导体紫外线发光器件包括：一个或多个第一导电型氮化物半导体层; 氮化物半导体的发光层; 一个或多个第二导电型氮化物半导体层; 和作为结晶的半透明导电膜（1 ），并且透过75 来自发光层的光的％以上。这些层依次层压在支撑基板上。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2015002239A 窒化物半導体発光素子および窒化物半導体発光素子の製造方法审中-公开
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：JP2015002239A
公开(公告)日：2015-01-05
申请号：JP2013125529
申请日：2013-06-14
申请人：シャープ株式会社 , Sharp Corp
发明人： OTA MASATAKA , YAMAMOTO HIDEICHIRO , SAWAMURA MAKOTO
IPC分类号： H01L33/22 , H01L33/32
摘要：【課題】大面積の窒化物半導体発光素子を歩留まり良く製造することができる窒化物半導体発光素子および窒化物半導体発光素子の製造方法を提供する。【解決手段】凸形状部分を有する凸形状領域と、凸形状領域に取り囲まれた非凸形状領域とを含む升目状の構造を表面に有している窒化物半導体発光素子とその製造方法である。【選択図】図1
摘要翻译：要解决的问题：提供一种能够以高产率制造大面积氮化物半导体发光元件的氮化物半导体发光元件及其制造方法。解决方案：提供一种氮化物半导体发光元件在其表面上具有方形结构，其包括具有凸部的凸区域和由凸区域包围的非凸区域。还提供了一种制造氮化物半导体发光元件的方法。

3. 发明专利

JP2004119702A GaN-BASED SEMICONDUCTOR LASER ELEMENT AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2004119702A
公开(公告)日：2004-04-15
申请号：JP2002281144
申请日：2002-09-26
申请人： Sharp Corp , シャープ株式会社
发明人： KAWAKAMI TOSHIYUKI , YAMAMOTO HIDEICHIRO , OMI SUSUMU , ITO SHIGETOSHI
IPC分类号： H01L21/3065 , H01L21/205 , H01S5/042 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To reduce the contact resistance of an electrode formed on a ridge by preventing the occurrence of a leakage current through an embedded layer in a buried ridge type GaN-based semiconductor laser element.
SOLUTION: A method of manufacturing the GaN-based semiconductor laser element includes a step of growing a GaN-based semiconductor laminate containing a first-conductivity first clad layer, an active layer, a second-conductivity second clad layer, and a second-conductivity third clad layer in this order; a step of successively depositing a first electrode and a protective film on the semiconductor laminate; and a step of processing the protective film and first electrode in striped states. The method also includes a step of forming a ridge stripe containing the protective film, first electrode, and second and third clad layers; a step of forming a first embedded layer in a state that the protective film is left; and a step of etching the part of the embedded layer formed on the ridge stripe. In addition, the method also includes a step of removing the protective film, and a step of depositing a second electrode on the first embedded layer and first electrode. These steps are performed in the described order.
COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2009004645A Nitride-based semiconductor laser device and manufacturing method therefor 审中-公开
标题翻译：基于氮化物的半导体激光器件及其制造方法
公开(公告)号：JP2009004645A
公开(公告)日：2009-01-08
申请号：JP2007165434
申请日：2007-06-22
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAMOTO HIDEICHIRO , KAMIKAWA TAKESHI , KAWAGUCHI YOSHINOBU , KAWAKAMI TOSHIYUKI
IPC分类号： H01S5/343 , H01S5/22
摘要： PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser device which has high thermal conductivity and also has an embedded layer having small film stress.
SOLUTION: The present invention relates to the nitride-based semiconductor laser device having a ridge-stripe structure, and a ridge stripe has the embedded layer made of aluminum nitride AlO
x N
y (y=1-2x/3).
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有高导热性并且还具有薄膜应力小的嵌入层的氮化物基半导体激光器件。解决方案：本发明涉及具有脊条结构的氮化物基半导体激光器件，并且脊条具有由氮化铝制成的嵌入层（y = 1-2x / 3）。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008300584A Nitride semiconductor laser element and manufacturing method thereof 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：JP2008300584A
公开(公告)日：2008-12-11
申请号：JP2007144428
申请日：2007-05-31
申请人： Sharp Corp , シャープ株式会社
发明人： YAMASHITA FUMIO , ITO SHIGETOSHI , YAMAMOTO HIDEICHIRO , KAWAKAMI TOSHIYUKI
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0425 , H01S5/3201 , H01S5/3202 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a constitution for suppressing the formation of steps on a nitride semiconductor layer.
SOLUTION: A nitride semiconductor laser element 10 is constituted so that the main surface of the nitride semiconductor substrate 101 is a (1-100) surface, a resonator end surface intersects with the main surface, in a cleavage constituting the resonator end surface, a digging portion 115 which is a digging region opened toward the nitride semiconductor layer surface is formed aside of at least one side of a stripe type waveguide.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种具有抑制氮化物半导体层上的台阶形成的结构的氮化物半导体激光元件。解决方案：氮化物半导体激光器元件10被构造成使得在构成共振器端的切割中，氮化物半导体衬底101的主表面是（1-100）表面，谐振器端表面与主表面相交作为朝向氮化物半导体层表面开口的挖掘区域的挖掘部分115形成在条形波导的至少一侧的旁边。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008294053A Nitride semiconductor laser element and manufacturing method thereof 有权
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：JP2008294053A
公开(公告)日：2008-12-04
申请号：JP2007135375
申请日：2007-05-22
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAMOTO HIDEICHIRO
IPC分类号： H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element that has a current constriction structure, which is excellent in crystallinity of a regrowth layer (third layer) formed on a current constriction layer (second layer) and has excellent current stopping characteristics, and then has element characteristics and reliability improved, and to provide a manufacturing method thereof.
SOLUTION: Disclosed are the nitride semiconductor laser element which has a laminate structure including a first layer (108), a second layer (109) formed on the first layer (108) and having an opening portion, and a third layer (110) formed in the opening portion and on the second layer (109) on a substrate (101), the second layer (109) being made of polycrystal Al
x Ga
1-x-y In
y N (0≤x, y, x+y≤1) aligned to a normal vector of a main surface of the substrate (101); and the manufacturing method thereof.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有电流收缩结构的氮化物半导体激光元件，该电流收缩结构在形成在电流收缩层（第二层）上的再生长层（第三层）的结晶度优异并具有优异的电流停止特性，然后提高元件特性和可靠性，并提供其制造方法。解决方案：公开了具有叠层结构的氮化物半导体激光元件，该叠层结构包括形成在第一层（108）上并具有开口部分的第一层（108），第二层（109）和第三层 110），其形成在基板（101）的开口部分和第二层（109）上，第二层（109）由多晶Al x SB- 与衬底（101）的主表面的法线矢量对准的SB> In y（N≤0,0≤x，y，x +y≤1）; 及其制造方法。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2006165421A Nitride semiconductor laser element, and manufacturing method therefor 审中-公开
标题翻译：氮化物半导体激光元件及其制造方法
公开(公告)号：JP2006165421A
公开(公告)日：2006-06-22
申请号：JP2004357705
申请日：2004-12-10
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAMOTO HIDEICHIRO , KONDO MASAFUMI
IPC分类号： H01S5/223 , H01L21/3065 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element and the manufacturing method therefor, whereby when etching a nitride semiconductor using a dry etching apparatus, the ridge structure, etc. of desired dimensions and shapes are so formed as to be able to create the nitride semiconductor laser element without variations in its various characteristics and with a high yield.
SOLUTION: In the manufacturing method of a nitride semiconductor laser element, the lights having specific wavelengths and emitted from the atoms and the molecules which are constituted out of elements contained in an etching gas are detected, among the emission spectrums, emitted from a plasma generated in the reaction chamber of an etching apparatus. Alternatively, the lights are detected, having specific wavelengths and emitted from the molecules which are constituted out of elements, contained in the etching gas and omitted out of the elements constituting nitride semiconductor thin films. Subsequently, by observing the time variations of the intensities of the lights, their etchings can be stopped accurately, at the desired positions of the nitride semiconductor thin films being positioned.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种氮化物半导体激光元件及其制造方法，其中当使用干蚀刻装置蚀刻氮化物半导体时，所需尺寸和形状的脊结构等形成为能够产生氮化物半导体激光元件，而其各种特性的变化并且以高产率。解决方案：在氮化物半导体激光元件的制造方法中，从发射光谱中检测出从发射光谱中发射的具有特定波长并从原子和分子发射的光，其由包含在蚀刻气体中的元素构成，在蚀刻装置的反应室中产生的等离子体。或者，检测出具有特定波长并从包含在蚀刻气体中的由元素构成的分子发射并在构成氮化物半导体薄膜的元素中省略的光。随后，通过观察光的强度的时间变化，可以在氮化物半导体薄膜定位的期望位置处精确地停止其蚀刻。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2008305911A Nitride system semiconductor laser element and its manufacturing method 有权
标题翻译：氮化物系半导体激光元件及其制造方法
公开(公告)号：JP2008305911A
公开(公告)日：2008-12-18
申请号：JP2007150639
申请日：2007-06-06
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAMOTO HIDEICHIRO , ITO SHIGETOSHI , YAMASHITA FUMIO , KAWAKAMI TOSHIYUKI
IPC分类号： H01S5/22
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S2301/173
摘要： PROBLEM TO BE SOLVED: To provide a nitride system semiconductor laser element having a structure for suppressing occurrence of a stage arising in a nitride semiconductor layer.
SOLUTION: The nitride system semiconductor laser element 100 comprises: the nitride semiconductor substrate 101 having a main surface of (11-20) surface; a resonator end surface orthogonal to the main surface; and an excavating part 114 as an excavating region for opening to the surface of the nitride semiconductor layer at least at one side of a stripe-shaped waveguide on a cleaving surface comprising the resonator end surface.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种具有抑制在氮化物半导体层中产生的阶段的发生的结构的氮化物系半导体激光元件。解决方案：氮化物系半导体激光元件100包括：具有（11-20）表面的主表面的氮化物半导体衬底101; 与主表面正交的谐振器端面; 以及挖掘部114作为挖掘区域，用于至少在包括共振器端面的裂开表面上的条形波导的一侧开口到氮化物半导体层的表面。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2007180522A Nitride-based semiconductor laser element and its manufacturing method 有权
标题翻译：基于氮化物的半导体激光元件及其制造方法
公开(公告)号：JP2007180522A
公开(公告)日：2007-07-12
申请号：JP2006318141
申请日：2006-11-27
申请人： Sharp Corp , シャープ株式会社
发明人： KAWAKAMI TOSHIYUKI , YAMAZAKI YUKIO , YAMAMOTO HIDEICHIRO
IPC分类号： H01S5/343
CPC分类号： H01S5/227
摘要： PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser element provided with a configuration of suppressing the generation of level difference caused to a nitride semiconductor layer.
SOLUTION: By forming a trench 115 trenched from a wafer surface at both sides of a ridge stripe 110, the level difference generated in the vicinity of an active layer 105 on the end face of a resonator can be prevented from reaching the ridge stripe 110 at cleaving.
COPYRIGHT: (C)2007,JPO&INPIT

10. 发明专利

JP2005216990A Nitride semiconductor laser device 审中-公开
标题翻译：氮化物半导体激光器件
公开(公告)号：JP2005216990A
公开(公告)日：2005-08-11
申请号：JP2004019330
申请日：2004-01-28
申请人： Sharp Corp , シャープ株式会社
发明人： YAMAMOTO HIDEICHIRO
IPC分类号： H01S5/16 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device which is stable in a high-power operation, suppresses the occurrence of COD (catastrophic optical damage) to prevent the deterioration of an end face, and has fine optical output characteristics.
SOLUTION: The nitride semiconductor laser device comprises a nitride semiconductor laser element which has a nitride semiconductor lamination consisting of a board and a plurality of nitride semiconductor layers formed on the board. The board is made of a nitride semiconductor, and the end faces of the laser element in the direction of a resonator are coated with a protective film made of an insulating material. At least one of the end faces of the laser element has current blocking areas in which no current flows, and the total length of the current blocking areas is 20% or less of the length of the resonator, or 200 μm or less. Thus, the nitride semiconductor laser element with the current blocking areas suppresses thermal or optical damage to the end face, makes the laser device stable in a high-power operation, and prevents the COD and the deterioration of the end face.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供在大功率操作中稳定的氮化物半导体激光器件，抑制COD（灾难性光学损伤）的发生以防止端面的劣化，并且具有良好的光输出特性。解决方案：氮化物半导体激光器件包括氮化物半导体激光元件，其具有由板和形成在板上的多个氮化物半导体层组成的氮化物半导体层叠体。该板由氮化物半导体制成，并且激光元件在谐振器的方向上的端面涂覆有由绝缘材料制成的保护膜。激光元件的至少一个端面具有没有电流流过的电流阻挡区域，并且电流阻挡区域的总长度为谐振器的长度的20％以下，或200μm以下。因此，具有电流阻挡区域的氮化物半导体激光元件抑制端面的热或光损伤，使得激光器件在大功率操作中稳定，并且防止了端面的COD和劣化。版权所有（C）2005，JPO＆NCIPI

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