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1. 发明专利

JP2013105864A Semiconductor light-emitting element and manufacturing method of the same 审中-公开
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2013105864A
公开(公告)日：2013-05-30
申请号：JP2011248226
申请日：2011-11-14
申请人： Sharp Corp , シャープ株式会社
发明人： SAWAMURA MAKOTO , ITO SHIGETOSHI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light-emitting element capable of dividing in high accuracy a nitride semiconductor light-emitting element using a nitride semiconductor substrate having a semipolar surface such as (202-1) and (202-1-).SOLUTION: The manufacturing method of a nitride semiconductor light-emitting element comprises a process of forming a striped groove 13 so as to extend in a predetermined division position Xa direction of a major growth plane 1a of a nitride semiconductor substrate 1 having a major growth plane in a (202-1) surface, not buried in a nitride semiconductor layer 2, and making the nitride semiconductor layer 2 grow only on one inner surface, before a nitride semiconductor layer formation process.
摘要翻译：解决方案：提供一种使用具有半极性表面的氮化物半导体衬底（202-1）和氮化物半导体发光元件的氮化物半导体发光元件能够高精度地分割的半导体发光元件的制造方法，（202-1-）。解决方案：氮化物半导体发光元件的制造方法包括以下步骤：形成条纹槽13，以便在氮化物半导体衬底1的主生长平面1a的预定划分位置Xa方向上延伸，该氮化物半导体衬底1具有在氮化物半导体层形成工艺之前，在（202-1）表面的主生长平面不被埋在氮化物半导体层2中，并且使氮化物半导体层2仅在一个内表面上生长。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2013093619A Nitride semiconductor wafer 有权
标题翻译： NITRIDE SEMICONDUCTOR WAFER
公开(公告)号：JP2013093619A
公开(公告)日：2013-05-16
申请号：JP2013020787
申请日：2013-02-05
申请人： Sharp Corp , シャープ株式会社
发明人： KAWAKAMI TOSHIYUKI , YAMAZAKI YUKIO , ITO SHIGETOSHI , OMI SUSUMU
IPC分类号： H01S5/02 , H01L21/301
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor element divided so that the resonator end face becomes flat.SOLUTION: When an LD structure 251 is fabricated on a GaNl-based substrate 250, a cleavage introduction groove 252 is provided by scribing the surface of the LD structure 251 with a diamond blade. The cleavage introduction groove 252 is provided between stripe-like optical waveguides 253 provided in parallel with the direction of a wafer, and provided in the shape of dashed lines in the direction of a wafer.
摘要翻译：要解决的问题：提供一种分割成使谐振器端面变平的氮化物半导体元件。解决方案：当在基于GaNl的基板250上制造LD结构251时，通过用金刚石刀片对LD结构251的表面进行划线来提供裂缝引入槽252。切割导入槽252设置在与晶片的<1-100>方向平行设置的条状光波导253之间，并且以晶片的<11-20>方向的虚线形状设置。版权所有（C）2013，JPO＆INPIT

3. 发明专利

JP2012160404A Light-emitting device, illuminating device and headlight 有权
标题翻译：发光装置，照明装置和头灯
公开(公告)号：JP2012160404A
公开(公告)日：2012-08-23
申请号：JP2011021083
申请日：2011-02-02
申请人： Sharp Corp , シャープ株式会社
发明人： KISHIMOTO KATSUHIKO , ITO SHIGETOSHI
IPC分类号： F21S8/12 , F21W101/10 , F21Y101/02 , G03B21/14
CPC分类号： F21S48/1159 , F21S41/147 , F21S41/16 , F21S41/24 , G03B21/204
摘要： PROBLEM TO BE SOLVED: To control decrease of extraction efficiency of illumination light from a region including a position where light flux from a light-emitting body is incident at the highest density.SOLUTION: The light-emitting device includes: LD chips 11 to generate excitation light L0; the light-emitting body 40 to generate fluorescence by irradiation of the excitation light L0 generated by the LD chips 11; and a mirror 90 with a light-reflecting concave surface SUF1 to reflect the fluorescence generated by the light-emitting body 40. A through-hole 90h is arranged in a region outside a bottom region ER, which is a region in the vicinity of a bottom part of the light-reflecting concave surface SUF1 in the mirror 90. A truncated pyramid light-converging part 21, inserted into the through-hole 90h to guide excitation light L0 generated at the LD chips 11 to the light-emitting body 40, is also arranged.
摘要翻译：要解决的问题：控制来自包括来自发光体的光束的位置的区域的照明光的提取效率的降低以最高的密度进入。解决方案：发光装置包括：LD芯片11，用于产生激发光L0; 发光体40通过照射由LD芯片11产生的激发光L0而产生荧光; 以及具有光反射凹面SUF1的反射镜90，以反射由发光体40产生的荧光。通孔90h配置在底部区域ER外的区域反射镜90中的反光凹面SUF1的底部。插入到通孔90h中的截顶棱锥会聚部21，以将在LD芯片11处产生的激发光L0引导到发光体40，也安排了。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2010177716A Nitride semiconductor laser element, method of manufacturing the same, and optical device using the same 审中-公开
标题翻译：氮化物半导体激光元件及其制造方法以及使用其的光学器件
公开(公告)号：JP2010177716A
公开(公告)日：2010-08-12
申请号：JP2010117301
申请日：2010-05-21
申请人： Sharp Corp , シャープ株式会社
发明人： TSUDA YUZO , ITO SHIGETOSHI , UEDA YOSHIHIRO , TANETANI MOTOTAKA
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a low oscillation threshold current density and a high manufacturing yield.
SOLUTION: The nitride semiconductor laser element at least includes: a first nitride semiconductor layer in which an intermediate layer having a layer thickness of ≥20 nm and ≤150 nm is formed by contacting between a light emitting layer of a quantum well structure and a p-type nitride semiconductor layer provided on the light emitting layer, and in which a silicon is added to the intermediate layer; and the undoped second nitride semiconductor layer which contacts between the first nitride semiconductor layer and the p-type nitride semiconductor layer.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有低振荡阈值电流密度和高制造成品率的氮化物半导体激光元件。解决方案：氮化物半导体激光元件至少包括：第一氮化物半导体层，其中层厚度≥20nm和≤150nm的中间层通过量子阱结构的发光层以及设置在发光层上的p型氮化物半导体层，其中将硅添加到中间层; 以及在第一氮化物半导体层和p型氮化物半导体层之间接触的未掺杂的第二氮化物半导体层。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009200513A CRYSTAL SUBSTRATE, AND MANUFACTURING METHOD OF GaN-BASED CRYSTAL FILM 有权
标题翻译：晶体基板和GaN基晶体膜的制造方法
公开(公告)号：JP2009200513A
公开(公告)日：2009-09-03
申请号：JP2009101474
申请日：2009-04-17
申请人： Sharp Corp , シャープ株式会社
发明人： ITO SHIGETOSHI , OMI SUSUMU
IPC分类号： H01L21/20 , H01L33/12 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a crystal substrate having a high-quality GaN-based crystal film continuous film small in defect density and suitable for crystal growth of a GaN-based semiconductor device. SOLUTION: This crystal substrate used as a substrate for forming a GaN-based semiconductor device is provided with a sapphire substrate 101 of which the front surface is a C-face; a GaN buffer layer 102 formed on the sapphire substrate 101; an epitaxial growth GaN layer 103 formed on the GaN buffer layer 102; a SiO 2 film 104 formed on the epitaxial growth layer 103, and having a plurality of openings 105; a plurality of island-like GaN-based crystals 11 formed by selective recrystallization of a GaN-based compound in the openings 105 of the SiO 2 film 104; and a GaN-based crystal continuous film 12 formed by growth of GaN-based crystals using the island-like GaN-based crystals 11 as nucleuses. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有缺陷密度小且适合于GaN基半导体器件的晶体生长的高质量GaN基晶体薄膜连续薄膜的晶体基板。解决方案：用作形成GaN基半导体器件的衬底的该晶体衬底设置有前表面为C面的蓝宝石衬底101; 形成在蓝宝石衬底101上的GaN缓冲层102; 形成在GaN缓冲层102上的外延生长GaN层103; 形成在外延生长层103上的具有多个开口105的SiO 2 膜104; 通过在SiO 2膜104的开口105中选择性地重结晶GaN基化合物形成的多个岛状GaN基晶体11; 以及使用岛状GaN基晶体11作为核成长GaN基晶体而形成的GaN系晶体连续膜12。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008300418A Nitride semiconductor laser element 审中-公开
标题翻译：氮化物半导体激光元件
公开(公告)号：JP2008300418A
公开(公告)日：2008-12-11
申请号：JP2007142048
申请日：2007-05-29
申请人： Sharp Corp , シャープ株式会社
发明人： UEDA YOSHIHIRO , TAKATANI KUNIHIRO , ITO SHIGETOSHI
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a high-reliability nitride semiconductor laser element by controlling an impurity density in a p-type layer of the nitride semiconductor laser element, and reducing the drive voltage of the semiconductor element.
SOLUTION: A nitride semiconductor laser element comprises a first layer, comprising an n-type nitride semiconductor, a second layer comprising a p-type nitride semiconductor, and a light-emitting layer between the first layer and the second layer. The light-emitting layer has a quantum well structure, comprising a well layer constituted of AlGaInN and a barrier layer constituted of AlGaN, and the p-type impurity density of the second layer is changed in the second layer.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：通过控制氮化物半导体激光元件的p型层中的杂质浓度并降低半导体元件的驱动电压来提供高可靠性氮化物半导体激光元件。解决方案：氮化物半导体激光元件包括第一层，包括n型氮化物半导体，第二层包括p型氮化物半导体，以及在第一层和第二层之间的发光层。发光层具有量子阱结构，包括由AlGaInN构成的阱层和由AlGaN构成的势垒层，第二层的p型杂质浓度在第二层中变化。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008263249A Driving method of led lamp and led lamp device 有权
标题翻译： LED灯和LED灯具的驱动方法
公开(公告)号：JP2008263249A
公开(公告)日：2008-10-30
申请号：JP2008205774
申请日：2008-08-08
申请人： Sharp Corp , シャープ株式会社
发明人： KAMIKAWA TAKESHI , ITO SHIGETOSHI , TANETANI MOTOTAKA
IPC分类号： H01L33/32 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To provide an LED lamp combined an LED element of which the color of emission varies depending on its driving current value (i.e. blue shift) and a fluorescent material and the driving method of the LED lamp. SOLUTION: The driving method of the LED lamp drives the LED lamp provided with the LED element 801 in which the blue shift of the emitting color is allowed by increasing the driving current value, and the fluorescent material 802 emitting light excited by the light emitted from the LED element. The color of the LED lamp is varied by varying the color of the LED element 801 by varying the driving current value. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供组合LED发光元件的LED灯，其发光颜色根据其驱动电流值（即蓝移）和荧光材料以及LED灯的驱动方法而变化。解决方案：LED灯的驱动方法驱动设置有LED元件801的LED灯，其中通过增加驱动电流值允许发光颜色的蓝移，并且荧光材料802发射由从LED元件发出的光。通过改变驱动电流值来改变LED元件801的颜色来改变LED灯的颜色。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2006339675A Nitride semiconductor laser element and semiconductor optical device 审中-公开
标题翻译：氮化物半导体激光器元件和半导体光学器件
公开(公告)号：JP2006339675A
公开(公告)日：2006-12-14
申请号：JP2006243015
申请日：2006-09-07
申请人： Sharp Corp , シャープ株式会社
发明人： TSUDA YUZO , ITO SHIGETOSHI
IPC分类号： H01S5/343 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a long laser oscillation lifetime. SOLUTION: In a nitride semiconductor laser element, there is provided a mask substrate having a stripe-shaped mask composed of a growth suppression film, in which an epitaxial growth of the nitride semiconductor is suppressed, and a stripe-shaped window part, on which the mask is not formed on a nitride semiconductor substrate or nitride semiconductor layer laminated thereon.On the mask substrate, a nitride semiconductor film covering the mask substrate and light emitting element structure having a light emitting layer composed of a well layer interposed by at least a n-type layer and p-type layer or the well layer and barrier layer are made to grow in series.A current narrow part of the light emitting element structure is prepared, so that it straddles an area excluding less than 1 micrometer side to side from the center of the mask toward the stripe direction of the mask, further the area excluding less than 1 micrometer side to side from the center of the window part toward the stripe direction of the window part, and furthermore, upper area of the mask and upper area of the window part. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供具有长激光振荡寿命的氮化物半导体激光元件。解决方案：在氮化物半导体激光元件中，提供一种掩模基板，其具有由抑制氮化物半导体的外延生长的生长抑制膜构成的条状掩模和条形窗部分在其上层叠有氮化物半导体衬底或氮化物半导体层上的掩模不形成在掩模衬底上的掩模衬底上，覆盖掩模衬底的氮化物半导体膜和具有由阱层构成的发光层的发光元件结构，至少使n型层和p型层或阱层和阻挡层串联生长。制备发光元件结构的当前窄的部分，使得它跨越不到1微米的区域从掩模的中心朝向掩模的条纹方向一侧到另一侧，另外从窗部分的中心朝向s的除了小于1微米的一侧的面积窗口部分的方向，以及掩模的上部区域和窗口部分的上部区域。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2006093548A Nitride semiconductor light-emitting element, and its manufacturing method 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：JP2006093548A
公开(公告)日：2006-04-06
申请号：JP2004279317
申请日：2004-09-27
申请人： Sharp Corp , シャープ株式会社
发明人： ITO SHIGETOSHI , KAMIKAWA TAKESHI , ARAKI MASAHIRO
IPC分类号： H01S5/323 , H01L21/205 , H01L33/16 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element which can be produced with high yield without variations in various characteristics by preventing the occurrence of cracking, making a uniform film thickness of each of nitride semiconductor thin films and obtaining a growth plane with superior surface flatness, and its manufacturing method. SOLUTION: A recess is formed on the boundary of a side face and a bottom face within a digging area and projections are formed on both ends of a peak so that atoms/molecules to be raw materials of nitride semiconductor thin films are suppressed from moving between the peak and the digging area because of migration or the like. Thus, a nitride semiconductor growth layer with superior surface flatness can be formed on the peak and the nitride semiconductor light-emitting element can be manufactured with high yield. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了提供一种氮化物半导体发光元件，其可以通过防止发生裂纹而以高产率而不变形地生产氮化物半导体发光元件，使得每个氮化物半导体薄膜的膜厚均匀并获得具有优异表面平整度的生长平面及其制造方法。解决方案：在挖掘区域中的侧面和底面的边界上形成凹部，并且在峰的两端形成突起，使得作为氮化物半导体薄膜的原料的原子/分子被抑制由于迁移等而在峰值和挖掘区域之间移动。因此，可以在峰上形成具有优异的表面平坦度的氮化物半导体生长层，并且可以高产率制造氮化物半导体发光元件。版权所有（C）2006，JPO＆NCIPI

10. 发明专利

JP2006049622A Nitride semiconductor laser element 有权
标题翻译：氮化物半导体激光元件
公开(公告)号：JP2006049622A
公开(公告)日：2006-02-16
申请号：JP2004229434
申请日：2004-08-05
申请人： Sharp Corp , シャープ株式会社
发明人： ITO SHIGETOSHI , HANAOKA DAISUKE , TANETANI MOTOTAKA , TSUDA YUZO
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a group III-V nitride semiconductor laser element wherein a stimulation threshold value is stably low and a drive current is not secularly increased even when the element is continuously driven at a high output of 100 mW or over.
SOLUTION: A band gap energy Ecl of a lower clad layer (102), the band gap energy Enl of a lower adjacent layer (104), the band gap energy Ew of the well layer of a quantum well active layer (105), the band gap energy Eb of a barrier layer, the band gap energy Enu of an upper adjacent layer (106), the band gap energy E1 of a first layer (107), the band gap energy E2 of a second layer (108), the band gap energy E3 of a third layer (109), and the band gap energy Ecu of an upper clad layer (110) hold a relation of Ew
摘要翻译：要解决的问题：为了提供III-V族氮化物半导体激光元件，其中刺激阈值稳定地低，并且即使元件以100mW的高输出连续驱动，驱动电流也不会长期增加，或过度。解决方案：下包层（102）的带隙能量Ecl，下相邻层（104）的带隙能量En1，量子阱活性层（105）的阱层的带隙能量Ew ），阻挡层的带隙能量Eb，上部相邻层（106）的带隙能量Enu，第一层（107）的带隙能量E1，第二层的带隙能量E2（108）），第三层（109）的带隙能量E3和上部包层（110）的带隙能量Ecu保持Ew

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