专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5830532A Method to produce ultrathin porous silicon-oxide layer 失效
标题翻译：生产超薄多孔氧化硅层的方法
公开(公告)号：US5830532A
公开(公告)日：1998-11-03
申请号：US819279
申请日：1997-03-18
申请人： Shaoping Tang , Robert M. Wallace , Yi Wei
发明人： Shaoping Tang , Robert M. Wallace , Yi Wei
IPC分类号： C23C8/10 , H01L21/316 , C23C16/40
CPC分类号： H01L21/02203 , C23C8/10 , H01L21/02238 , H01L21/02255 , H01L21/31695
摘要： A method for producing a porous film on a silicon substrate is described. The substrate 14 is placed in a vacuum chamber in the presence of oxygen at specified pressure and temperature for a period of time to form a thin oxide film 10 thereon. Then the conditions in the chamber are altered so that voids 14 of a desired dimension are formed in the oxide film 10. Alternatively, a substrate 20 is subjected to specific conditions in the vacuum chamber whereat oxide islands 22 nucleate on the surface. As the islands grow, they eventually cover most of the surface leaving voids 24 of the desired size.
摘要翻译：对硅基板上的多孔膜的制造方法进行说明。在特定压力和温度的氧气存在下将衬底14放置在真空室中一段时间以在其上形成薄氧化膜10。然后，改变腔室中的条件，使得在氧化物膜10中形成所需尺寸的空隙14.或者，衬底20在真空室中经受特定条件，其中氧化物岛22在表面上成核。当岛生长时，它们最终覆盖大部分表面，留下所需尺寸的空隙24。

2. 发明授权

US06613698B2 Lower temperature method for forming high quality silicon-nitrogen dielectrics 有权
公开(公告)号：US06613698B2
公开(公告)日：2003-09-02
申请号：US09859907
申请日：2001-05-17
申请人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
IPC分类号： H01L21318
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3185 , H01L29/511 , H01L29/513 , H01L29/518
摘要： A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.

3. 发明授权

US06420729B1 Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics 有权
公开(公告)号：US06420729B1
公开(公告)日：2002-07-16
申请号：US09747966
申请日：2000-12-27
申请人： Robert M. Wallace , Glen D. Wilk , Yi Wei , Sunil V. Hattangady
发明人： Robert M. Wallace , Glen D. Wilk , Yi Wei , Sunil V. Hattangady
IPC分类号： H01L2904
摘要： A method of making a semiconductor device and the device. The device, according to a first embodiment, is fabricated by providing a silicon (111) surface, forming on the surface a dielectric layer of crystalline silicon nitride and forming an electrode layer on the dielectric layer of silicon nitride. The silicon (111) surface is cleaned and made atomically flat. The dielectric layer if formed of crystalline silicon nitride by placing the surface in an ammonia ambient at a pressure of from about 1×10−7 to about 1×10−5 Torr at a temperature of from about 850° C. to about 1000° C. The electrode layer is heavily doped silicon. According to a second embodiment, there is provided a silicon (111) surface on which is formed a first dielectric layer of crystalline silicon nitride having a thickness of about 2 monolayers. A second dielectric layer compatible with silicon nitride and having a higher dielectric constant than silicon nitride is formed on the first dielectric layer and an electrode layer is formed over the second dielectric layer. A third dielectric layer of silicon nitride having a thickness of about 2 monolayers can be formed between the second dielectric layer and the electrode layer. The second dielectric layer is preferably taken from the class consisting of tantalum pentoxide, titanium dioxide and a perovskite material. Both silicon nitride layers can be formed as in the first embodiment. The electrode layer is preferably heavily doped silicon

4. 发明授权

US06274510B1 Lower temperature method for forming high quality silicon-nitrogen dielectrics 有权
标题翻译：用于形成高质量硅 - 氮电介质的较低温度方法
公开(公告)号：US06274510B1
公开(公告)日：2001-08-14
申请号：US09149427
申请日：1998-09-08
申请人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
IPC分类号： H01L21318
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3185 , H01L29/511 , H01L29/513 , H01L29/518
摘要： A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.
摘要翻译：公开了一种在半导体衬底上形成热氮化硅的方法。该方法允许形成足够厚的用于FET栅极电介质但具有低热量预算的热氮化硅。

5. 发明授权

US06277681B1 Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics 有权
标题翻译：在Si（111）上生产用于先进栅极电介质的超薄晶体氮化硅的工艺
公开(公告)号：US06277681B1
公开(公告)日：2001-08-21
申请号：US09270173
申请日：1999-03-16
申请人： Robert M. Wallace , Glen D. Wilk , Yi Wei , Sunil V. Hattangady
发明人： Robert M. Wallace , Glen D. Wilk , Yi Wei , Sunil V. Hattangady
IPC分类号： H01L218234
CPC分类号： H01L29/513 , H01L21/28167 , H01L21/28194 , H01L21/28202 , H01L21/3185 , H01L27/1085 , H01L29/517 , H01L29/518 , H01L29/66181
摘要： A method of making a semiconductor device and the device. The device, according to a first embodiment, is fabricated by providing a silicon (111) surface, forming on the surface a dielectric layer of crystalline silicon nitride and forming an electrode layer on the dielectric layer of silicon nitride. The silicon (111) surface is cleaned and made atomically flat. The dielectric layer if formed of crystalline silicon nitride by placing the surface in an ammonia ambient at a pressure of from about 1×10−7 to about 1×10−5 Torr at a temperature of from about 850° C. to about 1000° C. The electrode layer is heavily doped silicon. According to a second embodiment, there is provided a silicon (111) surface on which is formed a first dielectric layer of crystalline silicon nitride having a thickness of about 2 monolayers. A second dielectric layer compatible with silicon nitride and having a higher dielectric constant than silicon nitride is formed on the first dielectric layer and an electrode layer is formed over the second dielectric layer. A third dielectric layer of silicon nitride having a thickness of about 2 monolayers can be formed between the second dielectric layer and the electrode layer. The second dielectric layer is preferably taken from the class consisting of tantalum pentoxide, titanium dioxide and a perovskite material. Both silicon nitride layers can be formed as in the first embodiment.
摘要翻译：制造半导体器件和器件的方法。根据第一实施例的器件通过提供硅（111）表面来制造，在表面上形成结晶氮化硅的介电层并在氮化硅的介电层上形成电极层。硅（111）表面被清洁并且原子地平坦。如果由晶体氮化硅形成的电介质层，通过将表面放置在大约1×10-7至1×10-5乇的压力下，在大约850℃至大约1000℃的温度下。层是重掺杂硅。根据第二实施例，提供了一种硅（111）表面，在其上形成具有约2个单层厚度的结晶氮化硅的第一介电层。与氮化硅相容并且具有比氮化硅更高的介电常数的第二电介质层形成在第一电介质层上，并且在第二电介质层上形成电极层。可以在第二介电层和电极层之间形成具有约2个单层厚度的氮化硅的第三介电层。第二电介质层优选取自五氧化二钽，二氧化钛和钙钛矿型材料。可以如第一实施例那样形成氮化硅层。

6. 发明授权

US06730977B2 Lower temperature method for forming high quality silicon-nitrogen dielectrics 有权
标题翻译：用于形成高质量硅 - 氮电介质的较低温度方法
公开(公告)号：US06730977B2
公开(公告)日：2004-05-04
申请号：US10452999
申请日：2003-06-03
申请人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , John Mark Anthony , Yi Wei , Robert M. Wallace
IPC分类号： H01L2976
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/3185 , H01L29/511 , H01L29/513 , H01L29/518
摘要： A method for forming a thermal silicon nitride on a semiconductor substrate is disclosed. This method allows formation of thermal silicon nitride that is thick enough for a FET gate dielectric, but has a low thermal budget.
摘要翻译：公开了一种在半导体衬底上形成热氮化硅的方法。该方法允许形成足够厚的用于FET栅极电介质但具有低热量预算的热氮化硅。

7. 发明授权

US06258637B1 Method for thin film deposition on single-crystal semiconductor substrates 失效
标题翻译：在单晶半导体衬底上薄膜沉积的方法
公开(公告)号：US06258637B1
公开(公告)日：2001-07-10
申请号：US09452922
申请日：1999-12-02
申请人： Glen D. Wilk , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , Yi Wei , Robert M. Wallace
IPC分类号： H01L2100
CPC分类号： H01L21/02043 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02301 , H01L21/02312 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/31662 , Y10S438/974
摘要： A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may be a native oxide) on at least one region of the substrate, and thermally annealing the substrate in a vacuum while supplying a silicon-containing flux to the oxide surface, thus removing the oxidized silicon layer. Preferably, the thin film is formed immediately after removal of the oxidized silicon layer. The silicon-containing flux is preferably insufficient to deposit a silicon-containing layer on top of the oxidized silicon layer, and yet sufficient to substantially inhibit an SiO-forming reaction between the silicon substrate and the oxidized silicon layer. The method of the invention allows for growth or deposition of films which have exceptionally smooth interfaces (less than 0.1 nm rms roughness) with the underlying silicon substrate at temperatures less than 800° C., and is ideally suited for deposition of ultrathin films having thicknesses less than about 5 nm.
摘要翻译：公开了一种制备在单晶硅衬底上形成薄膜的表面的方法。他的方法的一个实施方案包括在衬底的至少一个区域上形成氧化硅层（其可以是天然氧化物），并且在真空中对衬底进行热退火，同时向氧化物表面提供含硅助焊剂，从而除去氧化硅层。优选地，在去除氧化硅层之后立即形成薄膜。含硅助焊剂优选不足以在氧化硅层的顶部上沉积含硅层，并且还足以基本上抑制硅衬底和氧化硅层之间的形成SiO的反应。本发明的方法允许在低于800℃的温度下与底层硅衬底具有非常平滑的界面（小于0.1nm均方根粗糙度）的生长或沉积，并且理想地适用于沉积具有厚度的超薄膜小于约5nm。

8. 发明授权

US06040230A Method of forming a nano-rugged silicon-containing layer 失效
标题翻译：形成纳米坚固的含硅层的方法
公开(公告)号：US06040230A
公开(公告)日：2000-03-21
申请号：US39075
申请日：1998-03-13
申请人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
发明人： John Mark Anthony , Robert M. Wallace , Yi Wei , Glen Wilk
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/82
摘要： An embodiment of the instant invention is a method of forming a nano-rugged silicon-containing layer, the method comprising the steps of: providing a first silicon-containing layer (steps 202 or 802); providing a patterning layer over the first silicon-containing layer (steps 204 or 804); the patterning layer comprised of an amorphous substance; providing a second silicon-containing layer (steps 206 or 808) over the patterning layer; and wherein the patterning layer creates a nano-rugged texture in the second silicon-containing layer. Preferably, the first and second silicon-containing layers are comprised of polycrystalline silicon. In an alternative embodiment, the patterning layer is comprised of a material which has small holes such that the step of providing the second silicon-containing layer utilizes the first silicon-containing layer as a seed layer through the small holes so as to form the second silicon-containing layer. In another alternative embodiment, the second silicon-containing layer is comprised of a plurality of islands of the silicon-containing material separated by voids in the material. Preferably, the patterning layer is comprised of SiO.sub.2.
摘要翻译：本发明的一个实施方案是一种形成纳米坚固的含硅层的方法，所述方法包括以下步骤：提供第一含硅层（步骤202或802）; 在第一含硅层上提供图形层（步骤204或804）; 所述图案层由无定形物质构成; 在所述图案化层上提供第二含硅层（步骤206或808）; 并且其中所述图案化层在所述第二含硅层中产生纳米坚固纹理。优选地，第一和第二含硅层由多晶硅组成。在替代实施例中，图案化层由具有小孔的材料构成，使得提供第二含硅层的步骤通过该小孔利用第一含硅层作为种子层，从而形成第二含硅层含硅层。在另一个替代实施例中，第二含硅层由多个岛状的含硅材料构成，该岛由材料中的空隙分开。优选地，图案化层由SiO 2组成。

9. 发明授权

US6020247A Method for thin film deposition on single-crystal semiconductor substrates 失效
标题翻译：在单晶半导体衬底上薄膜沉积的方法
公开(公告)号：US6020247A
公开(公告)日：2000-02-01
申请号：US904009
申请日：1997-07-31
申请人： Glen D. Wilk , Yi Wei , Robert M. Wallace
发明人： Glen D. Wilk , Yi Wei , Robert M. Wallace
IPC分类号： H01L21/302 , H01L21/20 , H01L21/306 , H01L21/3065 , H01L21/31 , H01L21/316 , H01L21/469
CPC分类号： H01L21/02043 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02301 , H01L21/02312 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/31662 , Y10S438/974
摘要： A method of preparing a surface for and forming a thin film on a single-crystal silicon substrate is disclosed. One embodiment of his method comprises forming an oxidized silicon layer (which may be a native oxide) on at least one region of the substrate, and thermally annealing the substrate in a vacuum while supplying a silicon-containing flux to the oxide surface, thus removing the oxidized silicon layer. Preferably, the thin film is formed immediately after removal of the oxidized silicon layer. The silicon-containing flux is preferably insufficient to deposit a silicon-containing layer on top of the oxidized silicon layer, and yet sufficient to substantially inhibit an SiO-forming reaction between the silicon substrate and the oxidized silicon layer. The method of the invention allows for growth or deposition of films which have exceptionally smooth interfaces (less than 0.1 nm rms roughness) with the underlying silicon substrate at temperatures less than 800.degree. C., and is ideally suited for deposition of ultrathin films having thicknesses less than about 5 nm.
摘要翻译：公开了一种制备在单晶硅衬底上形成薄膜的表面的方法。他的方法的一个实施方案包括在衬底的至少一个区域上形成氧化硅层（其可以是天然氧化物），并且在真空中对衬底进行热退火，同时向氧化物表面提供含硅助焊剂，从而除去氧化硅层。优选地，在去除氧化硅层之后立即形成薄膜。含硅助焊剂优选不足以在氧化硅层的顶部上沉积含硅层，并且还足以基本上抑制硅衬底和氧化硅层之间的形成SiO的反应。本发明的方法允许在低于800℃的温度下与下面的硅衬底具有非常平滑的界面（小于0.1nm均方根粗糙度）的生长或沉积，并且理想地适用于沉积具有厚度的超薄膜小于约5nm。

10. 发明授权

US08309438B2 Synthesizing graphene from metal-carbon solutions using ion implantation 有权
标题翻译：使用离子注入合成来自金属 - 碳溶液的石墨烯
公开(公告)号：US08309438B2
公开(公告)日：2012-11-13
申请号：US12706116
申请日：2010-02-16
申请人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
发明人： Luigi Colombo , Robert M. Wallace , Rodney S. Ruoff
IPC分类号： H01L21/20
CPC分类号： H01L21/02612 , H01L21/02527
摘要： A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
摘要翻译：一种使用碳的离子注入合成石墨烯的方法和半导体器件。使用离子注入将碳注入金属中。在碳分布在金属中之后，对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。然后将金属/石墨烯表面转移到电介质层，使得石墨烯层被放置在电介质层的顶部上。然后去除金属层。或者，凹陷区域被图案化并蚀刻在位于基底上的电介质层中。金属后来形成在这些凹陷区域。然后使用离子注入将碳注入到金属中。然后可以对金属进行退火和冷却，以便从金属沉淀碳以在金属表面上形成一层石墨烯。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式