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1. 发明授权

US08637411B2 Plasma activated conformal dielectric film deposition 有权
标题翻译：等离子体激活的保形电介质膜沉积
公开(公告)号：US08637411B2
公开(公告)日：2014-01-28
申请号：US13242084
申请日：2011-09-23
申请人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号： H01L21/469 , H01L21/31 , H01L21/311
CPC分类号： H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

2. 发明申请

US20120028454A1 PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION 有权
公开(公告)号：US20120028454A1
公开(公告)日：2012-02-02
申请号：US13242084
申请日：2011-09-23
申请人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
发明人： Shankar Swaminathan , Jon Henri , Dennis M. Hausmann , Pramod Subramonium , Mandyam Sriram , Vishwanathan Rangarajan , Kirthi K. Kattige , Bart J. van Schravendijk , Andrew J. McKerrow
IPC分类号： H01L21/225 , C23C16/52 , C23C16/50 , C23C16/455 , C23C16/458
CPC分类号： H01L21/02123 , C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/4408 , C23C16/45523 , C23C16/45525 , C23C16/4554 , C23C16/45544 , C23C16/52 , C23C16/56 , H01J37/32412 , H01J2237/3321 , H01J2237/3365 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02321 , H01L21/0234 , H01L21/02348 , H01L21/67017 , H01L21/76831 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.

3. 发明申请

US20110256726A1 PLASMA ACTIVATED CONFORMAL FILM DEPOSITION 有权
标题翻译：等离子体激活的合成膜沉积
公开(公告)号：US20110256726A1
公开(公告)日：2011-10-20
申请号：US13084399
申请日：2011-04-11
申请人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号： H01L21/311 , H01L21/31 , H01L21/306 , C23F1/02 , B05C5/00 , B32B38/08
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

4. 发明授权

US08728956B2 Plasma activated conformal film deposition 有权
标题翻译：等离子体激活的保形膜沉积
公开(公告)号：US08728956B2
公开(公告)日：2014-05-20
申请号：US13084399
申请日：2011-04-11
申请人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
发明人： Adrien LaVoie , Shankar Swaminathan , Hu Kang , Ramesh Chandrasekharan , Tom Dorsh , Dennis M. Hausmann , Jon Henri , Thomas Jewell , Ming Li , Bryan Schlief , Antonio Xavier , Thomas W. Mountsier , Bart J. van Schravendijk , Easwar Srinivasan , Mandyam Sriram
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/4554 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02348 , H01L21/28562 , H01L21/67017 , H01L21/6719 , H01L21/67201 , H01L21/76224 , H01L21/76825 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by the following operations: (a) exposing the substrate surface to a first reactant in vapor phase under conditions allowing the first reactant to adsorb onto the substrate surface; (b) exposing the substrate surface to a second reactant in vapor phase while the first reactant is adsorbed on the substrate surface; and (c) exposing the substrate surface to plasma to drive a reaction between the first and second reactants adsorbed on the substrate surface to form the film.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于以下操作：（a）在允许第一反应物吸附到基底表面上的条件下，将气相底物表面暴露于第一反应物; （b）当所述第一反应物吸附在所述基材表面上时，将所述基材表面暴露于气相中的第二反应物; 和（c）将衬底表面暴露于等离子体以驱动吸附在衬底表面上的第一和第二反应物之间的反应以形成膜。

5. 发明授权

US08956983B2 Conformal doping via plasma activated atomic layer deposition and conformal film deposition 有权
标题翻译：通过等离子体激活的原子层沉积和保形膜沉积的共形掺杂
公开(公告)号：US08956983B2
公开(公告)日：2015-02-17
申请号：US13607386
申请日：2012-09-07
申请人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien LaVoie
发明人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien LaVoie
IPC分类号： H01L21/469 , H01L21/31 , H01L21/311 , C23C16/04 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/56 , H01L21/02 , H01L21/768 , H01L21/225 , H01L29/66
CPC分类号： C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/45523 , C23C16/45531 , C23C16/4554 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/02348 , H01L21/2255 , H01L21/76831 , H01L21/76898 , H01L29/66803
摘要： Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.
摘要翻译：这里公开的是在反应室中掺杂图案化衬底的方法。所述方法可以包括形成第一共形膜层，其具有包括掺杂剂的掺杂剂源，并将一些掺杂剂驱动到衬底中以形成共形掺杂分布。在一些实施方案中，形成第一膜层可以包括将掺杂剂前体引入反应室，在其形成吸附限制层的条件下吸附掺杂剂前体，并使吸附的掺杂剂前体反应形成掺杂剂源。还公开了用于掺杂衬底的装置，其可以包括反应室，气体入口和具有机器可读代码的控制器，其具有包括用于操作气体入口以将掺杂剂前体引入反应室以使其被吸附的指令，以及指令用于使吸附的掺杂剂前体反应以形成含有掺杂剂源的膜层。

6. 发明申请

US20130040447A1 CONFORMAL DOPING VIA PLASMA ACTIVATED ATOMIC LAYER DEPOSITION AND CONFORMAL FILM DEPOSITION 有权
标题翻译：通过等离子体活化的原子层沉积和一致的膜沉积
公开(公告)号：US20130040447A1
公开(公告)日：2013-02-14
申请号：US13607386
申请日：2012-09-07
申请人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien La Voie
发明人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien La Voie
IPC分类号： H01L21/225 , B05C9/02 , B05C11/00
CPC分类号： C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/45523 , C23C16/45531 , C23C16/4554 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/02348 , H01L21/2255 , H01L21/76831 , H01L21/76898 , H01L29/66803
摘要： Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.
摘要翻译：这里公开的是在反应室中掺杂图案化衬底的方法。所述方法可以包括形成第一共形膜层，其具有包括掺杂剂的掺杂剂源，并将一些掺杂剂驱动到衬底中以形成共形掺杂分布。在一些实施方案中，形成第一膜层可以包括将掺杂剂前体引入反应室，在其形成吸附限制层的条件下吸附掺杂剂前体，并使吸附的掺杂剂前体反应形成掺杂剂源。还公开了用于掺杂衬底的装置，其可以包括反应室，气体入口和具有机器可读代码的控制器，其具有包括用于操作气体入口以将掺杂剂前体引入反应室以使其被吸附的指令，以及指令用于使吸附的掺杂剂前体反应以形成含有掺杂剂源的膜层。

7. 发明授权

US06518421B1 Process for the preparation of epothilone analogs 有权
公开(公告)号：US06518421B1
公开(公告)日：2003-02-11
申请号：US09775361
申请日：2001-02-01
申请人： Wen Sen Li , John E. Thornton , Zhenrong Guo , Shankar Swaminathan
发明人： Wen Sen Li , John E. Thornton , Zhenrong Guo , Shankar Swaminathan
IPC分类号： C07D49100
CPC分类号： C07D303/38 , C07D417/06 , C07D491/04
摘要： The present invention relates to a process for the preparation of epothilone analogs by initially forming novel ring-opened epothilones and carrying out a macrolactamization reaction thereon. The subject process is amenable to being carried out in a single reaction vessel without isolation of the intermediate compound and provides at least about a three-fold increase in yield over prior processes for preparing the desired epothilone analogs.

8. 发明授权

US06261810B1 Enzymatic oxidative deamination process 失效
标题翻译：酶的氧化脱氨过程
公开(公告)号：US06261810B1
公开(公告)日：2001-07-17
申请号：US09386588
申请日：1999-08-31
申请人： Ramesh N. Patel , Amit Banerjee , Venkata B. Nanduri , Laszlo J. Szarka , Shankar Swaminathan , John J. Venit , Jerome L. Moniot , David A. Lust , Sushil K. Srivastava
发明人： Ramesh N. Patel , Amit Banerjee , Venkata B. Nanduri , Laszlo J. Szarka , Shankar Swaminathan , John J. Venit , Jerome L. Moniot , David A. Lust , Sushil K. Srivastava
IPC分类号： C12P1718
CPC分类号： C07K5/06139 , A61K38/00 , C07K14/8103 , C12N9/1096
摘要： The present invention concerns an enzymatic oxidative deamination process of a dipeptide monomer to prepare an intermediate useful to prepare compounds having endopeptidase and angiotensin converting enzyme inhibition activity.
摘要翻译：本发明涉及二肽单体的酶氧化脱氨过程，以制备可用于制备具有内肽酶和血管紧张素转化酶抑制活性的化合物的中间体。

9. 发明授权

US6162913A Preparation of [4S-(4.alpha.,7.alpha.,10a.beta.)]-4-amino-octahydro-5-oxo-7H-pyrido[2,1 -b] [1,3]thiazepine-7-carboxylic acid, methyl ester and salts thereof via novel disulfides 有权
标题翻译： [4S-（4α，7α，10aβ）] -4-氨基 - 八氢-5-氧代-7H-吡啶并[2,1-b] [1,3]硫氮杂-7-甲酸甲酯酯及其盐通过新的二硫化物
公开(公告)号：US6162913A
公开(公告)日：2000-12-19
申请号：US349861
申请日：1999-07-08
申请人： Jerome L. Moniot , Sushil K. Srivastava , William J. Winter , John J. Venit , Shankar Swaminathan , Keith Ramig , Paul A. Jass , Mark D. Schwinden , John L. Dillon, Jr. , Saibaba Racha , James Simpson , Chien-Kuang Chen , Shawn K. Pack
发明人： Jerome L. Moniot , Sushil K. Srivastava , William J. Winter , John J. Venit , Shankar Swaminathan , Keith Ramig , Paul A. Jass , Mark D. Schwinden , John L. Dillon, Jr. , Saibaba Racha , James Simpson , Chien-Kuang Chen , Shawn K. Pack
IPC分类号： C07D513/04 , C07B53/00 , C07B61/00 , C07C229/04 , C07C229/22 , C07C261/00 , C07C319/22 , C07C323/59 , C07C323/60 , C07D281/02
CPC分类号： C07D513/04 , C07C323/60 , Y02P20/55
摘要： N-protected-L-homocysteine disulfide of the formula ##STR1## or an activated form thereof is reacted with (S)-2-amino-6,6-dimethoxyhexanoic acid, methyl ester to give the disulfide intermediate of the formula ##STR2## Cleavage of the disulfide bond followed by acid catalyzed cyclization produces the N-protected lactam of formula III which is useful for preparing the pharmaceutically active compound omapatrilat.
摘要翻译：将下式的N-保护的L-高半胱氨酸二硫化物或其活化形式与（S）-2-氨基-6,6-二甲氧基己酸甲酯反应，得到式的二硫化物中间体通过酸催化环化产生式III的N-保护的内酰胺，其可用于制备药物活性化合物omapatrilat。

10. 发明授权

US5371077A Side chain derivatized 15-oxygenated sterols, methods of using them and a process for preparing them 失效
标题翻译：侧链衍生的15-氧化甾醇，使用它们的方法和制备它们的方法
公开(公告)号：US5371077A
公开(公告)日：1994-12-06
申请号：US923423
申请日：1992-08-03
申请人： George J. Schroepfer, Jr. , Josef E. Herz , Shankar Swaminathan , William K. Wilson
发明人： George J. Schroepfer, Jr. , Josef E. Herz , Shankar Swaminathan , William K. Wilson
IPC分类号： C12N9/99 , A61K31/575 , A61P3/06 , A61P43/00 , C07J9/00 , C07J31/00 , C07J41/00 , C07J75/00 , A61K31/56
CPC分类号： C07J9/005 , A61K31/575 , C07J31/006 , C07J41/0055 , C07J9/00
摘要： Pharmaceutical compositions are provided for lowering the activity of HMG-CoA reductase and/or lowering serum cholesterol, comprising an amount effective to lower the activity of HMG-CoA reductase and/or lower serum cholesterol of a side chain derivatized 15-oxygenated sterol having the formula (I): ##STR1## the basic ring structure being saturated or unsaturated, wherein R.sub.1 is --OH, .dbd.O, --OR.sub.7, ##STR2## a sulfate group, a sugar moiety, or a Mg, Na, or K salt of a sulfate group;R.sub.2 is --H, --OH, .dbd.O, mono- or di-halogen, or a C.sub.1 to C.sub.6 alkyl group, which may be unsaturated or substituted with halogen;R.sub.3 is --H, --OH, halogen, or a C.sub.1 to C.sub.6 alkyl group, which may be unsaturated or substituted with halogen;R.sub.4 is nonexistent when there is a double bond between the 8 and 14 carbons or .alpha.H, .beta.H, or an .alpha.C.sub.1 to C.sub.6 alkyl group;R.sub.5 is --OH, .dbd.O, .dbd.NOH, or ##STR3## R.sub.6 is --CH.sub.2 CH(CH.sub.3).sub.2 or CH.sub.2 N(CH.sub.3).sub.2, in which one or more of the hydrogen atoms is replaced by OH or halogen;R.sub.7 is a C.sub.1 to C.sub.6 alkyl group;R.sub.8 is a C.sub.1 to C.sub.20 aliphatic group, which may be substituted or unsubstituted, or a phenyl group; andn is an integer of from 2 to 6; andoptionally a pharmaceutically acceptable carrier or excipient, with the proviso that R.sub.6 is not --CH.sub.2 CH(CH.sub.3)(CH.sub.2 OH). Methods of using the pharmaceutical compositions containing the side chain derivatized 15-oxygenated sterols are also provided.A new process is also provided for preparing side chain derivatized 15-oxygenated sterols. This process includes oxidative cleavage of the saturated side chain of the sterol with trifluoroperacetic acid to give a side chain trifluoroacetate and subsequent hydrolysis of this ester. The resultant side chain alcohol is a valuable and advanced intermediate for the preparation of side chain derivatives of 15-oxygenated sterols.
摘要翻译：提供了用于降低HMG-CoA还原酶和/或降低血清胆固醇的活性的药物组合物，其包含有效降低HMG-CoA还原酶的活性和/或降低侧链衍生的15-氧化甾醇的血清胆固醇的量，其具有式（I）：饱和或不饱和的，其中R 1是-OH，= O，-OR 7，硫酸根基团，糖基团或硫酸根基团的Mg，Na或K盐; R2是-H，-OH，= O，单 - 或二 - 卤素，或可以是不饱和的或被卤素取代的C1-C6烷基; R3是-H，-OH，卤素或C1-C6烷基，其可以是不饱和的或被卤素取代的; 在8和14碳之间存在双键或αH，βH或αC1至C6烷基时，R4不存在; R 5是-OH，= O，= NOH，或者R 6是-CH 2 CH（CH 3）2或CH 2 N（CH 3）2，其中一个或多个氢原子被OH或卤素取代; R7是C1-C6烷基; R8是可以是取代或未取代的C1〜C20脂肪族基团或苯基; n为2〜6的整数。和任选的药学上可接受的载体或赋形剂，条件是R 6不是-CH 2 CH（CH 3）（CH 2 OH）。还提供了使用含有侧链衍生的15-氧化甾醇的药物组合物的方法。还提供了用于制备侧链衍生的15-氧化甾醇的新方法。该方法包括用三氟过乙酸氧化裂解固醇的饱和侧链，得到侧链三氟乙酸盐，随后水解该酯。所得的侧链醇是制备15-氧化甾醇的侧链衍生物的有价值和先进的中间体。

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