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1. 发明申请

US20130196516A1 METHODS FOR UV-ASSISTED CONFORMAL FILM DEPOSITION 有权
标题翻译：紫外辅助合成膜沉积的方法
公开(公告)号：US20130196516A1
公开(公告)日：2013-08-01
申请号：US13472282
申请日：2012-05-15
申请人： Adrien Lavoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
发明人： Adrien Lavoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
IPC分类号： H01L21/318
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02277 , H01L21/0228
摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.
摘要翻译：描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

2. 发明申请

US20120009802A1 PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION 有权
标题翻译：等离子体激活一体化电介质膜沉积
公开(公告)号：US20120009802A1
公开(公告)日：2012-01-12
申请号：US13224240
申请日：2011-09-01
申请人： Adrien LaVoie , Mandyam Sriram
发明人： Adrien LaVoie , Mandyam Sriram
IPC分类号： H01L21/31 , B05C11/00
CPC分类号： C23C16/045 , C23C16/345 , C23C16/402 , C23C16/45523 , C23C16/45529 , C23C16/4554 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02348 , H01L21/76224 , H01L21/76898
摘要： Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
摘要翻译：在基材表面上沉积膜的方法包括表面介导的反应，其中膜在反应物吸附和反应的一个或多个循环上生长。在一个方面，该方法的特征在于在吸附和反应循环之间将杂质物质间歇地递送到膜。

3. 发明授权

US07851360B2 Organometallic precursors for seed/barrier processes and methods thereof 有权
标题翻译：用于种子/屏障过程的有机金属前体及其方法
公开(公告)号：US07851360B2
公开(公告)日：2010-12-14
申请号：US11675066
申请日：2007-02-14
申请人： Juan Dominguez , Adrien Lavoie , John Plombon , Joseph Han , Harsono Simka , David Thompson , John Peck
发明人： Juan Dominguez , Adrien Lavoie , John Plombon , Joseph Han , Harsono Simka , David Thompson , John Peck
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , H01L21/28562 , H01L21/76873 , H01L21/76874
摘要： Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposited by atomic layer deposition, chemical vapor deposition and/or physical vapor deposition.
摘要翻译：本文公开了在种子/屏障应用中沉积在底物上的有机金属前体和方法。在一些实施方案中，有机金属前体是含钌，含钽前体或其组合，并且可以通过原子层沉积，化学气相沉积和/或物理气相沉积来沉积。

4. 发明申请

US20060223300A1 Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 有权
标题翻译：用于金属膜在互连应用中的化学相沉积的有机金属前体
公开(公告)号：US20060223300A1
公开(公告)日：2006-10-05
申请号：US11096860
申请日：2005-03-31
申请人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
发明人： Harsono Simka , Juan Dominguez , Steven Johnston , Adrien Lavoie , Kevin O'Brien
IPC分类号： H01L21/4763
CPC分类号： H01L21/28556 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76856 , H01L21/76858 , H01L21/76862 , H01L21/76864 , H01L21/76871 , H01L21/76873
摘要： Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
摘要翻译：在此描述利用有机金属前体形成薄膜的化学相沉积方法。有机金属前体可以包括单个金属中心或多个金属中心。化学相沉积可以是化学气相沉积（CVD），原子层沉积（ALD）或混合CVD和ALD。这些化学相沉积方法与有机金属前体的使用允许膜在宽度小于100nm，更特别地小于50nm的开口内的共形沉积，以形成薄膜，例如阻挡层，种子层和粘附层。

5. 发明申请

US20050287276A1 Microencapsulation for sustained delivery of carbon dioxide 审中-公开
标题翻译：用于持续输送二氧化碳的微胶囊化
公开(公告)号：US20050287276A1
公开(公告)日：2005-12-29
申请号：US11185071
申请日：2005-07-19
申请人： Adrien Lavoie , David Soane
发明人： Adrien Lavoie , David Soane
IPC分类号： A23L2/40 , C12C1/00
CPC分类号： A23L2/40 , A23V2002/00 , A23V2200/224 , A23V2250/11
摘要： The present invention relates to solid delivery systems for storage, distribution, and delivery of carbon dioxide into beverages. More specifically, this invention is directed to methods and preparations for providing a powdered beverage formulation capable of sustained carbonation in aqueous solution and to methods for carbonating a beverage that sustainably releases carbon dioxide into the beverage.
摘要翻译：本发明涉及用于将二氧化碳储存，分配和输送到饮料中的固体输送系统。更具体地，本发明涉及提供能够在水溶液中持续碳酸化的粉末饮料制剂的方法和制备方法以及用于将可持续地将二氧化碳释放到饮料中的饮料碳酸化的方法。

6. 发明授权

US08956983B2 Conformal doping via plasma activated atomic layer deposition and conformal film deposition 有权
标题翻译：通过等离子体激活的原子层沉积和保形膜沉积的共形掺杂
公开(公告)号：US08956983B2
公开(公告)日：2015-02-17
申请号：US13607386
申请日：2012-09-07
申请人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien LaVoie
发明人： Shankar Swaminathan , Mandyam Sriram , Bart van Schravendijk , Pramod Subramonium , Adrien LaVoie
IPC分类号： H01L21/469 , H01L21/31 , H01L21/311 , C23C16/04 , C23C16/34 , C23C16/40 , C23C16/455 , C23C16/56 , H01L21/02 , H01L21/768 , H01L21/225 , H01L29/66
CPC分类号： C23C16/045 , C23C16/345 , C23C16/401 , C23C16/402 , C23C16/45523 , C23C16/45531 , C23C16/4554 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/0228 , H01L21/02348 , H01L21/2255 , H01L21/76831 , H01L21/76898 , H01L29/66803
摘要： Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source.
摘要翻译：这里公开的是在反应室中掺杂图案化衬底的方法。所述方法可以包括形成第一共形膜层，其具有包括掺杂剂的掺杂剂源，并将一些掺杂剂驱动到衬底中以形成共形掺杂分布。在一些实施方案中，形成第一膜层可以包括将掺杂剂前体引入反应室，在其形成吸附限制层的条件下吸附掺杂剂前体，并使吸附的掺杂剂前体反应形成掺杂剂源。还公开了用于掺杂衬底的装置，其可以包括反应室，气体入口和具有机器可读代码的控制器，其具有包括用于操作气体入口以将掺杂剂前体引入反应室以使其被吸附的指令，以及指令用于使吸附的掺杂剂前体反应以形成含有掺杂剂源的膜层。

7. 发明授权

US08647993B2 Methods for UV-assisted conformal film deposition 有权
标题翻译： UV辅助保形膜沉积方法
公开(公告)号：US08647993B2
公开(公告)日：2014-02-11
申请号：US13472282
申请日：2012-05-15
申请人： Adrien LaVoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
发明人： Adrien LaVoie , Bhadri Varadarajan , Jon Henri , Dennis Hausmann
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L21/02167 , C23C16/325 , C23C16/45536 , H01L21/02126 , H01L21/0214 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02277 , H01L21/0228
摘要： Described are methods of making silicon nitride (SiN) materials and other silicon-containing films, including carbon-containing and/or oxygen-containing films such as SiCN (also referred to as SiNC), SiON and SiONC films, on substrates. According to various embodiments, the methods involve electromagnetic radiation-assisted activation of one or more reactants. In certain embodiments, for example, the methods involve ultraviolet (UV) activation of vapor phase amine coreactants. The methods can be used to deposit silicon-containing films, including SiN and SiCN films, at temperatures below about 400° C.
摘要翻译：描述了在衬底上制备包括含碳和/或含氧膜如SiCN（也称为SiNC），SiON和SiONC膜的氮化硅（SiN）材料和其它含硅膜的方法。根据各种实施方案，所述方法涉及一种或多种反应物的电磁辐射辅助活化。在某些实施方案中，例如，该方法涉及蒸气相胺共反应物的紫外（UV）活化。该方法可用于在低于约400℃的温度下沉积含硅膜，包括SiN和SiCN膜。

8. 发明申请

US20130210241A1 Precursors for Plasma Activated Conformal Film Deposition 有权
标题翻译：等离子体激活保形膜沉积的前体
公开(公告)号：US20130210241A1
公开(公告)日：2013-08-15
申请号：US13409212
申请日：2012-03-01
申请人： Adrien LaVoie , Mark J. Saly , Daniel Moser , Rajesh Odedra , Ravi Kanjolia
发明人： Adrien LaVoie , Mark J. Saly , Daniel Moser , Rajesh Odedra , Ravi Kanjolia
IPC分类号： H01L21/31 , H01L21/3065 , C23C16/50
CPC分类号： C23C16/52 , C23C16/045 , C23C16/345 , C23C16/4554 , C23C16/45553 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/02348 , H01L21/31116 , H01L21/76826 , H01L21/76829 , H01L21/76837 , H01L21/76898
摘要： A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film.
摘要翻译：在衬底表面上沉积膜的方法包括在反应室中提供衬底; 从二叔丁基重氮基硅烷，双（乙基甲基氨基）硅烷，双（二异丙基氨基）硅烷，双（叔丁基肼基）二乙基硅烷，三（二甲基氨基）甲硅烷基叠氮化物，三（二甲基氨基）甲硅烷基酰胺，乙基硅氧烷三氮化物，二异丙基氨基硅烷和六（二甲基氨基）二硅氮烷; 在允许含硅反应物吸附到基材表面上的条件下，将含硅反应物气相引入反应室; 将所述含硅反应物吸附在所述基材表面上的情况下，将气相中的第二反应物引入所述反应室，并且其中引入所述第二反应物而不先将所述含硅反应物从所述反应室中排出; 并将衬底表面暴露于等离子体以驱动衬底表面上的含硅反应物和第二反应物之间的反应以形成膜。

9. 发明申请

US20070207611A1 Noble metal precursors for copper barrier and seed layer 审中-公开
标题翻译：铜屏障和种子层的贵金属前体
公开(公告)号：US20070207611A1
公开(公告)日：2007-09-06
申请号：US11367160
申请日：2006-03-03
申请人： Adrien Lavoie , Juan Dominguez , Aaron Budrevich
发明人： Adrien Lavoie , Juan Dominguez , Aaron Budrevich
IPC分类号： H01L21/44
CPC分类号： C23C28/00 , C23C28/322 , C23C28/34 , C23C28/36
摘要： A copper interconnect oh a semiconductor substrate comprises a dielectric layer having a trench, a noble metal layer on the dielectric layer within the trench, and a copper interconnect on the noble metal layer. The noble metal layer has a thickness that is between 3 Å and 100 Å and a density that is greater than or equal to 5 g/cm3. The copper interconnect may be formed by etching a trench into the dielectric layer, pulsing a noble metal containing precursor proximate to the semiconductor substrate, and pulsing a reactive gas proximate to the semiconductor substrate, wherein the reactive gas reacts with the precursor to form a noble metal layer on the dielectric layer. A copper layer may then be deposited atop the noble metal layer and planarized. The noble metal layer functions as a barrier to copper diffusion and provides a surface upon which the copper metal can nucleate.
摘要翻译：半导体衬底的铜互连包括具有沟槽的电介质层，沟槽内介电层上的贵金属层和贵金属层上的铜互连。贵金属层的厚度在3埃至100埃之间，密度大于或等于5克/平方厘米。铜互连可以通过将沟槽蚀刻到电介质层中，使靠近半导体衬底的含贵金属的前体脉冲，并且使靠近半导体衬底的反应性气体脉冲，其中反应气体与前体反应形成贵金属电介质层上的金属层。然后可以将铜层沉积在贵金属层上方并平坦化。贵金属层用作铜扩散的阻挡层，并提供铜金属可以在其上成核的表面。

10. 发明申请

US20070105375A1 Catalytic nucleation monolayer for metal seed layers 有权
标题翻译：催化成核单层金属种子层
公开(公告)号：US20070105375A1
公开(公告)日：2007-05-10
申请号：US11269402
申请日：2005-11-07
申请人： Adrien Lavoie , Arnel Fajardo , Valery Dubin
发明人： Adrien Lavoie , Arnel Fajardo , Valery Dubin
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76873 , H01L21/76876
摘要： A method of forming a copper interconnect on a substrate comprises providing a substrate that includes a dielectric layer and a trench etched into the dielectric layer, depositing a barrier layer within the trench, using a palladium immobilization process to form a metal catalyst layer on the barrier layer, activating the metal catalyst layer, and using a vapor deposition process to deposit a copper seed layer onto the metal catalyst layer. The vapor deposition process may include PVD, CVD, or ALD. An electroplating process or an electroless plating process may then be used to deposit a bulk copper layer onto the copper seed layer to fill the trench. A planarization process may follow to form the final interconnect structure.
摘要翻译：在衬底上形成铜互连的方法包括提供衬底，该衬底包括介电层和蚀刻到电介质层中的沟槽，使用钯固定法在阻挡层中沉积势垒层，以在阻挡层上形成金属催化剂层层，激活金属催化剂层，并使用气相沉积工艺将铜籽晶层沉积到金属催化剂层上。气相沉积工艺可以包括PVD，CVD或ALD。然后可以使用电镀工艺或无电电镀工艺将块状铜层沉积到铜种子层上以填充沟槽。可以进行平面化处理以形成最终的互连结构。

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