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1. 发明授权

US06602323B2 Method and apparatus for reducing PFC emission during semiconductor manufacture 有权
公开(公告)号：US06602323B2
公开(公告)日：2003-08-05
申请号：US09946632
申请日：2001-09-06
申请人： Seung-Ki Chae , Sang-Gon Lee , Sang-Hyuk Chung , Seong-Jin Heo
发明人： Seung-Ki Chae , Sang-Gon Lee , Sang-Hyuk Chung , Seong-Jin Heo
IPC分类号： B01D5000
CPC分类号： B01D53/70 , B01D2257/2066 , Y02C20/30 , Y02P70/605
摘要： A method of reducing PFC emissions during a semiconductor manufacturing process that includes a set of sub-processes each of which produces at least one PFC includes the steps of exhausting PFC's produced by each sub-process to a common line to form a combined exhaust stream, treating the combined exhaust stream from each sub-process using a separate PFC abatement system, combining the treated exhaust streams to form a combined treated stream, and wet scrubbing the combined treated stream.

2. 发明授权

US08083507B2 Vacuum pump having rotation body cleaning unit with spraying holes on an output surface of the cleaning body surrounding a shaft 失效
标题翻译：真空泵具有旋转体清洁单元，其具有围绕轴的清洁体的输出表面上的喷孔
公开(公告)号：US08083507B2
公开(公告)日：2011-12-27
申请号：US12050063
申请日：2008-03-17
申请人： Tea-Jin Park , Seung-Ki Chae , Kwang-Myung Lee , Sang-Gon Lee
发明人： Tea-Jin Park , Seung-Ki Chae , Kwang-Myung Lee , Sang-Gon Lee
IPC分类号： F01C1/30 , F03C2/00
CPC分类号： F04C18/126 , B08B3/02 , B08B5/02 , F04C23/001 , F04C29/0092 , F04C2220/10 , F04C2280/02
摘要： Provided is a vacuum pump having a rotation body cleaning unit. The vacuum pump includes a case provided with rotation guide holes at opposite end parts. The case includes a rotation body placed inside the case and including a rotation shaft having opposite ends rotatably supported by the rotation guide holes and a number of lobes provided in the rotation shaft at predetermined intervals. Further, a cleaning part is supported by the case and placed in a space between the lobes and cleans the rotation body.
摘要翻译：提供一种具有旋转体清洁单元的真空泵。真空泵包括在相对端部设置有旋转导向孔的壳体。壳体包括设置在壳体内部的旋转体，包括旋转轴，其具有由旋转引导孔可旋转地支撑的相对端和以预定间隔设置在旋转轴中的多个凸角。此外，清洁部件被壳体支撑并且放置在叶片之间的空间中并且清洁旋转体。

3. 发明申请

US20120196439A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120196439A1
公开(公告)日：2012-08-02
申请号：US13289107
申请日：2011-11-04
申请人： Kook-Joo KIM , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
发明人： Kook-Joo KIM , Jin-Ho Kim , Seung-Ki Chae , Pil-Kwon Jun , Sun-Hee Park , Gyoung-Eun Byun
IPC分类号： H01L21/28
CPC分类号： H01L23/522 , H01L21/76829 , H01L2924/0002 , H01L2924/00
摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
摘要翻译：在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。形成第一布线以通过第一绝缘中间层。在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。形成第二布线以通过第二绝缘中间层和蚀刻停止层。在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。第二布线电连接到第一布线。虚设图案与第二布线电隔离。

4. 发明申请

US20070263194A1 METHOD OF EXPOSING A WAFER TO A LIGHT, AND RETICLE, RETICLE ASSEMBLY AND EXPOSING APPARATUS FOR PERFORMING THE SAME 审中-公开
标题翻译：将光照射到灯的方法，以及用于实施其的反射装置和曝光装置
公开(公告)号：US20070263194A1
公开(公告)日：2007-11-15
申请号：US11830439
申请日：2007-07-30
申请人： Byong-Cheol Park , Dong-Hwa Shin , Seung-Ki Chae , Sang-Ho Lee
发明人： Byong-Cheol Park , Dong-Hwa Shin , Seung-Ki Chae , Sang-Ho Lee
IPC分类号： G03F1/00
CPC分类号： G03F7/70425 , G03B27/42 , G03F7/70466
摘要： A method of exposing a wafer to a light comprises transferring an image onto a plurality of shot areas by irradiating a projection light, each of the plurality of shot areas including at least one die area defined on the wafer on which a photoresist film is formed, and scanning the at least one die area adjacent to an edge portion of the wafer by irradiating a scanning light.
摘要翻译：将晶片暴露于光的方法包括通过照射投影光将图像转印到多个照射区域上，所述多个照射区域中的每一个包括限定在其上形成有光致抗蚀剂膜的晶片上的至少一个管芯区域，并通过照射扫描光来扫描与晶片的边缘部分相邻的至少一个管芯区域。

5. 发明申请

US20060001852A1 Method and apparatus for exposing semiconductor substrates 有权
标题翻译：曝光半导体衬底的方法和装置
公开(公告)号：US20060001852A1
公开(公告)日：2006-01-05
申请号：US11168527
申请日：2005-06-29
申请人： Sang-Ho Lee , Jin-Phil Choi , Dong-Hwa Shin , Seung-Ki Chae , Byong-Cheol Park
发明人： Sang-Ho Lee , Jin-Phil Choi , Dong-Hwa Shin , Seung-Ki Chae , Byong-Cheol Park
IPC分类号： G03B27/42
CPC分类号： G03B27/42 , G03F7/70275
摘要： Provided are methods and apparatus for exposing multiple substrates within a single exposing apparatus using only a single light source wherein a first substrate is exposed in a series of steps or shots during which light transmitted along a primary optical path is directed onto a primary surface of the substrate with the substrate being repositioned between sequential shots. A second substrate is exposed during the period of time while the first substrate is being repositioned by altering the optical path to divert the light from the light source into a secondary optical path that will expose a region on the second substrate. When the first substrate has been repositioned, the diversion of the light is terminated so that the light will again be transmitted along the primary optical path in order to expose the next sequential shot on the primary surface of the first substrate.
摘要翻译：提供了用于仅使用单个光源在单个曝光设备中曝光多个基板的方法和设备，其中第一基板以一系列步骤或照射曝光，在此期间沿主要光学路径传输的光被引导到衬底，其中衬底在连续镜头之间重新定位。第二衬底在一段时间期间被曝光，同时通过改变光路来重新定位第一衬底，以将来自光源的光转移到将暴露第二衬底上的区域的次级光路。当第一衬底被重新定位时，光的转向被终止，使得光将再次沿着主光路传播，以便暴露第一衬底的主表面上的下一个顺序射击。

6. 发明授权

US06869500B2 Method for processing a wafer and apparatus for performing the same 失效
标题翻译：晶圆加工方法及其制造方法
公开(公告)号：US06869500B2
公开(公告)日：2005-03-22
申请号：US10236939
申请日：2002-09-09
申请人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
发明人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/311 , H05H1/00 , C23C16/00
CPC分类号： H01L21/02046 , H01L21/31116 , H01L21/67109
摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.
摘要翻译：公开了一种用于在制造半导体器件中处理晶片的方法和装置，以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调节到第一温度，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物，维持第二温度以将大部分副产物与晶片分离，并且处理步骤在同一空间内原位实施。因此，可以蚀刻形成在几个晶片上的自然氧化物层，并且可以在相同的室中原位除去反应副产物，从而提高生产率。

7. 发明授权

US07556712B2 Laser cleaning of backside of wafer for photolithographic processing 失效
标题翻译：用于光刻处理的晶片背面的激光清洗
公开(公告)号：US07556712B2
公开(公告)日：2009-07-07
申请号：US11566624
申请日：2006-12-04
申请人： Hun-Jung Yi , Seung-Ki Chae
发明人： Hun-Jung Yi , Seung-Ki Chae
IPC分类号： C23F1/00 , H01L21/00
CPC分类号： G03F7/2022 , G03F7/70925 , H01L21/67028 , H01L21/67225
摘要： A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.
摘要翻译：可以通过包括用于将光刻的光学照明操作进行到晶片前侧进行照明的照明模块的装置清洁晶片的背面之后进行光刻工艺，以及用于进行清洁操作的清洁模块晶圆背面。提供从晶片背面去除颗粒的能力并消除由于晶片夹紧误差引起的散焦效应，这些和其它实施例提高了光刻工艺的可靠性，以及半导体器件的生产率和产量。

8. 发明申请

US20060110533A1 Methods and apparatus for forming a titanium nitride layer 审中-公开
标题翻译：用于形成氮化钛层的方法和装置
公开(公告)号：US20060110533A1
公开(公告)日：2006-05-25
申请号：US11281163
申请日：2005-11-17
申请人： Wan-Goo Hwang , Myeong-Jin Kim , Seung-Ki Chae , Hyun-Seok Lim , Kyoung-Ho Jang
发明人： Wan-Goo Hwang , Myeong-Jin Kim , Seung-Ki Chae , Hyun-Seok Lim , Kyoung-Ho Jang
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： H01L21/67109 , C23C16/34 , C23C16/45546 , H01L21/28556 , H01L21/67757
摘要： A method of forming a titanium nitride layer by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein a first source gas including a titanium precursor is provided onto substrates loaded in a process chamber for a first time period; a first purge gas is introduced into the process chamber for a second time period shorter than the first time period; a second source gas including nitrogen is provided onto the substrates for a third time period substantially identical to the first time period; and, a second purge gas is introduced into the process chamber for a fourth time period substantially identical to the second time period. Titanium nitride layers having uniform thickness and good step coverage may thus be formed while realizing a greatly reduced manufacturing time.
摘要翻译：描述了通过使用间歇式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中包括钛前体的第一源气体在第一时间段内被装载到处理室中的基板上; 将第一吹扫气体引入处理室中比第一时间段短的第二时间段; 包括氮的第二源气体在基板上提供与第一时间段基本相同的第三时间段; 并且将第二吹扫气体与第二时间段基本相同的第四时间段引入到处理室中。因此可以在实现大大缩短的制造时间的同时形成具有均匀厚度和良好阶梯覆盖的氮化钛层。

9. 发明申请

US20050220576A1 Substrate manufacturing apparatus and substrate transfer module used therein 审中-公开
标题翻译：基板制造装置及其中使用的基板转印模块
公开(公告)号：US20050220576A1
公开(公告)日：2005-10-06
申请号：US10990249
申请日：2004-11-16
申请人： Ki-Sang Kim , Seung-Ki Chae , Yun-Sik Yang , Seong-Hun Jeon
发明人： Ki-Sang Kim , Seung-Ki Chae , Yun-Sik Yang , Seong-Hun Jeon
IPC分类号： B25J9/06 , B65G1/00 , B65G49/07 , H01L21/677 , H01L21/68 , H01L21/687
CPC分类号： H01L21/67748 , H01L21/68707
摘要： A substrate manufacturing apparatus comprises a transfer chamber, at least one process chamber disposed adjacent to a lateral face of the transfer chamber, and a substrate transfer module including at least two transfer robots which transfer a substrate to the process chamber, the substrate transfer module being disposed at the transfer chamber. Each of the at least two transfer robots comprises a blade including at least two supporters for supporting a substrate, an arm part connected to the blade to move the blade, and an arm driving part for driving the blade and the arm part.
摘要翻译：基板制造装置包括传送室，与传送室的侧面相邻设置的至少一个处理室，以及包括将基板传送到处理室的至少两个传送机器人的基板传送模块，所述基板传送模块是设置在传送室。所述至少两个传送机器人中的每一个包括一个叶片，该叶片包括至少两个用于支撑基板的支撑件，连接到叶片以移动叶片的臂部分和用于驱动叶片和臂部分的臂驱动部分。

10. 发明授权

US06910954B2 Method of supplying slurry and a slurry supply apparatus having a mixing unit at a point of use 有权
标题翻译：在使用点供给浆料的方法和具有混合单元的浆料供给装置
公开(公告)号：US06910954B2
公开(公告)日：2005-06-28
申请号：US10145806
申请日：2002-05-16
申请人： Sue-Ryeon Kim , Seung-Un Kim , Seung-Ki Chae , Je-Gu Lee , Seung-Hoon Ahn
发明人： Sue-Ryeon Kim , Seung-Un Kim , Seung-Ki Chae , Je-Gu Lee , Seung-Hoon Ahn
IPC分类号： B01F3/12 , B01F15/00 , B24B37/00 , B24B57/02 , H01L21/304 , B24B1/00
CPC分类号： B24B57/02 , B01F3/1221 , B01F3/1271 , B01F15/00123 , B01F2003/1285
摘要： A computer-controlled slurry supplying apparatus for providing abrasive slurry to a chemical mechanical polishing (CMP) machine in a semiconductor manufacturing process preferably comprises a storage portion for accepting and storing a quantity of undiluted slurry, a mixing portion for accepting undiluted slurry from the storage portion and mixing with a diluting solution to created a diluted slurry, a supply portion for holding the diluted slurry, and at least one point-of-use mixing unit for mixing at least one chemical additive to the diluted slurry at or near a dispensing nozzle at the point of application. Each of the above portions of the slurry supplying apparatus further includes a re-circulation means for keep solutions in a mixed and agitated state. A method for using the slurry supplying apparatus comprises steps of controllably operating various valves, pumps, and sensors to maintain a desired slurry composition and flow rate.
摘要翻译：一种用于在半导体制造工艺中向化学机械抛光（CMP）机器提供磨料浆料的计算机控制的浆料供应装置优选地包括用于接收和存储一定数量的未稀释浆料的存储部分，用于从储存器接收未稀释浆料的混合部分并与稀释溶液混合以产生稀释的浆料，用于保存稀释浆料的供应部分和至少一个使用点的混合单元，用于将至少一种化学添加剂与分配喷嘴处或附近的稀释浆料混合在应用点。浆料供给装置的上述各部分还包括用于将溶液保持在混合和搅拌状态的再循环装置。使用浆料供给装置的方法包括可控地操作各种阀，泵和传感器以维持所需的浆料组成和流速的步骤。

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