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1. 发明授权

US08564079B2 STT MRAM magnetic tunnel junction architecture and integration 有权
标题翻译： STT MRAM磁隧道结结构和集成
公开(公告)号：US08564079B2
公开(公告)日：2013-10-22
申请号：US12355941
申请日：2009-01-19
申请人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
发明人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) in a semiconductor back-end-of-line (BEOL) process flow includes a first metal interconnect for communicating with at least one control device and a first electrode for coupling to the first metal interconnect through a via formed in a dielectric passivation barrier using a first mask. The device also includes an MTJ stack for storing data coupled to the first electrode, a portion of the MTJ stack having lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a same lateral dimension as defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second metal interconnect is coupled to the second electrode and at least one other control device.
摘要翻译：半导体后端工艺流程中用于磁性随机存取存储器（MRAM）的磁隧道结（MTJ）装置包括用于与至少一个控制装置通信的第一金属互连和用于与至少一个控制装置通信的第一电极通过使用第一掩模在介电钝化屏障中形成的通孔耦合到第一金属互连。该装置还包括用于存储耦合到第一电极的数据的MTJ堆叠，MTJ堆叠的一部分具有基于第二掩模的侧向尺寸。由第二掩模限定的部分在接触通孔之上。第二电极耦合到MTJ堆叠并且还具有与第二掩模所限定的相同的横向尺寸。第一电极和MTJ堆叠的一部分由第三掩模限定。第二金属互连件耦合到第二电极和至少一个其他控制装置。

2. 发明申请

US20090261434A1 STT MRAM Magnetic Tunnel Junction Architecture and Integration 有权
标题翻译： STT MRAM磁隧道结结构与集成
公开(公告)号：US20090261434A1
公开(公告)日：2009-10-22
申请号：US12355941
申请日：2009-01-19
申请人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
发明人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) in a semiconductor back-end-of-line (BEOL) process flow includes a first metal interconnect for communicating with at least one control device and a first electrode for coupling to the first metal interconnect through a via formed in a dielectric passivation barrier using a first mask. The device also includes an MTJ stack for storing data coupled to the first electrode, a portion of the MTJ stack having lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a same lateral dimension as defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second metal interconnect is coupled to the second electrode and at least one other control device.
摘要翻译：半导体后端工艺流程中用于磁性随机存取存储器（MRAM）的磁隧道结（MTJ）装置包括用于与至少一个控制装置通信的第一金属互连和用于与至少一个控制装置通信的第一电极通过使用第一掩模在介电钝化屏障中形成的通孔耦合到第一金属互连。该装置还包括用于存储耦合到第一电极的数据的MTJ堆叠，MTJ堆叠的一部分具有基于第二掩模的侧向尺寸。由第二掩模限定的部分在接触通孔之上。第二电极耦合到MTJ堆叠并且还具有与第二掩模所限定的相同的横向尺寸。第一电极和MTJ堆叠的一部分由第三掩模限定。第二金属互连件耦合到第二电极和至少一个其它控制装置。

3. 发明申请

US20090161422A1 Magnetic Tunnel Junction Device with Separate Read and Write Paths 有权
标题翻译：具有独立读写路径的磁隧道结设备
公开(公告)号：US20090161422A1
公开(公告)日：2009-06-25
申请号：US11959797
申请日：2007-12-19
申请人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
发明人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , Y10S977/933 , Y10S977/935
摘要： In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the MTJ structure. The write path is separate from the read path.
摘要翻译：在一个实施例中，公开了一种包括磁隧道结（MTJ）结构的装置。该设备还包括耦合到MTJ结构的读取路径和耦合到MTJ结构的写入路径。写入路径与读取路径分开。

4. 发明授权

US08004881B2 Magnetic tunnel junction device with separate read and write paths 有权
标题翻译：具有独立读写路径的磁隧道结设备
公开(公告)号：US08004881B2
公开(公告)日：2011-08-23
申请号：US11959797
申请日：2007-12-19
申请人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
发明人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , Y10S977/933 , Y10S977/935
摘要： In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the MTJ structure. The write path is separate from the read path.
摘要翻译：在一个实施例中，公开了一种包括磁隧道结（MTJ）结构的装置。该设备还包括耦合到MTJ结构的读取路径和耦合到MTJ结构的写入路径。写入路径与读取路径分开。

5. 发明申请

US20120033490A1 Generating a Non-Reversible State at a Bitcell Having a First Magnetic Tunnel Junction and a Second Magnetic Tunnel Junction 有权
标题翻译：在具有第一磁隧道结和第二磁隧道结的位单元处产生不可逆状态
公开(公告)号：US20120033490A1
公开(公告)日：2012-02-09
申请号：US12849043
申请日：2010-08-03
申请人： Hari M. Rao , Jung Pill Kim , Seung H. Kang , Xiaochun Zhu , Tae Hyun Kim , Kangho Lee , Xia Li , Wah Nam Hsu , Wuyang Hao , Jungwon Suh , Nicholas K. Yu , Matthew Michael Nowak , Steven M. Millendorf , Asaf Ashkenazi
发明人： Hari M. Rao , Jung Pill Kim , Seung H. Kang , Xiaochun Zhu , Tae Hyun Kim , Kangho Lee , Xia Li , Wah Nam Hsu , Wuyang Hao , Jungwon Suh , Nicholas K. Yu , Matthew Michael Nowak , Steven M. Millendorf , Asaf Ashkenazi
IPC分类号： G11C11/14 , G06F17/50 , G11C29/00
CPC分类号： G11C11/16 , G11C11/14 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C17/02 , G11C17/16 , G11C29/027
摘要： A method of generating a non-reversible state at a bitcell having a first magnetic tunnel junction (MTJ) and a second MTJ includes applying a program voltage to the first MTJ of the bitcell without applying the program voltage to the second MTJ of the bitcell. A memory device includes a bitcell having a first MTJ and a second MTJ and programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell.
摘要翻译：在具有第一磁性隧道结（MTJ）和第二MTJ的位单元处产生不可逆状态的方法包括将编程电压施加到位单元的第一MTJ，而不将编程电压施加到位单元的第二MTJ。存储器件包括具有第一MTJ和第二MTJ的位单元以及被配置为通过将程序信号施加到位单元的第一MTJ和第二MTJ中的所选择的一个而在位单元处产生不可逆状态的编程电路。

6. 发明申请

US20120107966A1 MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION 有权
标题翻译：磁性隧道连接装置和制造
公开(公告)号：US20120107966A1
公开(公告)日：2012-05-03
申请号：US13349633
申请日：2012-01-13
申请人： Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
发明人： Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
IPC分类号： H01L21/02 , G06F9/45
CPC分类号： H01L43/02 , B82Y25/00 , B82Y40/00 , G06F17/5068 , H01F10/3254 , H01F10/329 , H01F41/309 , H01F41/32 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
摘要翻译：公开了一种磁性隧道接合装置及其制造方法。在一个具体实施方案中，该方法包括在磁性隧道结结构的自由层上沉积封盖材料以形成覆盖层并氧化封盖材料的一部分以形成一层氧化材料。

7. 发明申请

US20100302843A1 Spin Transfer Torque - Magnetic Tunnel Junction Device and Method of Operation 有权
标题翻译：旋转转矩 - 磁隧道结装置及其操作方法
公开(公告)号：US20100302843A1
公开(公告)日：2010-12-02
申请号：US12474608
申请日：2009-05-29
申请人： Xia Li , Kangho Lee , Xiaochun Zhu , Seung H. Kang
发明人： Xia Li , Kangho Lee , Xiaochun Zhu , Seung H. Kang
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659
摘要： A method is disclosed that includes controlling current flow direction for current sent over a source line or a bit line of a magnetic memory device. A current generated magnetic field assists switching of a direction of a magnetic field of a free layer of a magnetic element within a spin transfer torque magnetic tunnel junction (STT-MTJ) device.
摘要翻译：公开了一种方法，其包括控制通过磁存储器件的源极线或位线发送的电流的电流流动方向。电流产生的磁场有助于在自旋转移转矩磁隧道结（STT-MTJ）装置内的磁性元件自由层的磁场方向的切换。

8. 发明授权

US08923044B2 MTP MTJ device 有权
标题翻译： MTP MTJ设备
公开(公告)号：US08923044B2
公开(公告)日：2014-12-30
申请号：US13589426
申请日：2012-08-20
申请人： Xia Li , Kangho Lee , Jung Pill Kim , Taehyun Kim , Wah Nam Hsu , Seung H. Kang , Xiaochun Zhu , Wei-Chuan Chen , Sungryul Kim
发明人： Xia Li , Kangho Lee , Jung Pill Kim , Taehyun Kim , Wah Nam Hsu , Seung H. Kang , Xiaochun Zhu , Wei-Chuan Chen , Sungryul Kim
IPC分类号： G11C11/14 , G11C17/16 , H01L27/22 , G11C11/16 , H01L43/02 , H01L43/12
CPC分类号： H01L43/12 , G11C11/005 , G11C11/161 , G11C11/1675 , G11C11/1693 , G11C11/5607 , G11C17/02 , G11C17/165 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08
摘要： Systems and methods for multiple-time programmable (MTP) devices. An MTP device includes a magnetic tunnel junction (MTJ) device programmable to a plurality of states based on voltage applied across the MTJ device. The plurality of states include a first resistance state corresponding to a first binary value stored in the MTJ device based on a first voltage, a second resistance state corresponding to a second binary value stored in the MTJ device based on a second voltage, a third resistance state corresponding to a breakdown of a barrier layer of the MTJ device based on a third voltage, and a fourth resistance state corresponding to an open fuse based on a fourth voltage.
摘要翻译：多时间可编程（MTP）设备的系统和方法。 MTP设备包括基于跨越MTJ设备施加的电压而可编程为多个状态的磁隧道结（MTJ）设备。多个状态包括基于第一电压而存储在MTJ装置中的第一二进制值的第一电阻状态，基于第二电压存储在MTJ装置中的与第二二进制值对应的第二电阻状态，第三电阻状态对应于基于第三电压的MTJ装置的势垒层的击穿，以及对应于基于第四电压的开路保险丝的第四电阻状态。

9. 发明授权

US08558331B2 Magnetic tunnel junction device 有权
标题翻译：磁隧道连接装置
公开(公告)号：US08558331B2
公开(公告)日：2013-10-15
申请号：US12633264
申请日：2009-12-08
申请人： Xiaochun Zhu , Seung H. Kang , Xia Li , Kangho Lee
发明人： Xiaochun Zhu , Seung H. Kang , Xia Li , Kangho Lee
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , H01L27/222 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A system and method of manufacturing and using a magnetic tunnel junction device is disclosed. In a particular embodiment, a magnetic tunnel junction device includes a first free layer and second free layer. The magnetic tunnel junction also includes a spin torque enhancement layer. The magnetic tunnel junction device further includes a spacer layer between the first and second free layers that includes a material and has a thickness that substantially inhibits exchange coupling between the first and second free layers. The first and second free layers are magneto-statically coupled.
摘要翻译：公开了制造和使用磁性隧道结装置的系统和方法。在特定实施例中，磁性隧道结装置包括第一自由层和第二自由层。磁隧道结还包括自旋转矩增强层。磁性隧道结装置还包括位于第一和第二自由层之间的间隔层，其包括材料并且具有基本上抑制第一和第二自由层之间的交换耦合的厚度。第一和第二自由层是磁静态耦合的。

10. 发明申请

US20130114336A1 THREE PORT MTJ STRUCTURE AND INTEGRATION 有权
标题翻译：三港MTJ结构与整合
公开(公告)号：US20130114336A1
公开(公告)日：2013-05-09
申请号：US13356720
申请日：2012-01-24
申请人： Xia Li , Xiaochun Zhu , Seung H. Kang , Jung Pill Kim , Wah Nam Hsu , Taehyun Kim , Kangho Lee
发明人： Xia Li , Xiaochun Zhu , Seung H. Kang , Jung Pill Kim , Wah Nam Hsu , Taehyun Kim , Kangho Lee
IPC分类号： G11C11/14 , H01L21/8246 , H01L29/82
CPC分类号： G11C11/161 , G11C8/16 , G11C11/16 , G11C11/1659 , H01L27/228 , H01L43/08
摘要： A two-transistor one-MTJ (2T1MTJ) three port structure includes two separate pin layer structures coupled to one free layer structure. The pin layer structures may include an anti-ferromagnetic layer (AFM) layer coupled to a pin layer. The free layer structure includes free layer coupled to a barrier layer and a cap layer. The free layer structure may include a thin barrier layer coupled to each of the pin layer stacks. The three port MTJ structure provides separate write and read paths which improve read sensing margin without increasing write voltage or current. The three port MTJ structure may be fabricated with a simple two step MTJ etch process.
摘要翻译：双晶体管单MTJ（2T1MTJ）三端口结构包括耦合到一个自由层结构的两个独立的引脚层结构。引脚层结构可以包括耦合到引脚层的反铁磁层（AFM）层。自由层结构包括耦合到阻挡层和盖层的自由层。自由层结构可以包括耦合到每个引脚层堆叠的薄势垒层。三端口MTJ结构提供单独的写入和读取路径，从而提高读取感测余量，而不增加写入电压或电流。三端口MTJ结构可以用简单的两步MTJ蚀刻工艺制造。

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