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    • 1. 发明授权
    • Reference cell repair scheme
    • 参考细胞修复方案
    • US09147457B2
    • 2015-09-29
    • US13613038
    • 2012-09-13
    • Jung Pill KimTaehyun KimSungryul Kim
    • Jung Pill KimTaehyun KimSungryul Kim
    • G11C11/00G11C11/16G11C29/00
    • G11C11/16G11C11/165G11C11/1673G11C29/787G11C29/832
    • In a magnetic random access memory (MRAM), numerous arrays of reference bit cells are coupled together by coupling their respective bit lines to a merged reference node. Pass gate circuitry coupled between the respective reference bit lines and the merged reference node is configured for selectively coupling or decoupling one or more of the reference bit lines to and from the merged reference node. The pass gate circuitry is controllable by programming one-time programmable devices coupled to the pass gate circuitry. The one-time programmable devices can be programmed to decouple flawed arrays of reference bit cells from the merged reference node or to select between redundant arrays of reference bit cells for coupling to the reference node.
    • 在磁随机存取存储器(MRAM)中,参考位单元的多个阵列通过将它们各自的位线耦合到合并的参考节点而耦合在一起。 耦合在相应的参考位线和合并的参考节点之间的通过门电路被配置用于选择性地将一个或多个参考位线耦合或去耦合到合并的参考节点。 传递门电路可通过编程耦合到通路电路的一次可编程器件来控制。 一次性可编程器件可以被编程为将参考位单元的有缺陷的阵列与合并的参考节点去耦,或者在用于耦合到参考节点的参考位单元的冗余阵列之间进行选择。
    • 2. 发明申请
    • REFERENCE CELL REPAIR SCHEME
    • 参考细胞修复方案
    • US20140071738A1
    • 2014-03-13
    • US13613038
    • 2012-09-13
    • Jung Pill KimTaehyun KimSungryul Kim
    • Jung Pill KimTaehyun KimSungryul Kim
    • G11C11/16
    • G11C11/16G11C11/165G11C11/1673G11C29/787G11C29/832
    • In a magnetic random access memory (MRAM), numerous arrays of reference bit cells are coupled together by coupling their respective bit lines to a merged reference node. Pass gate circuitry coupled between the respective reference bit lines and the merged reference node is configured for selectively coupling or decoupling one or more of the reference bit lines to and from the merged reference node. The pass gate circuitry is controllable by programming one-time programmable devices coupled to the pass gate circuitry. The one-time programmable devices can be programmed to decouple flawed arrays of reference bit cells from the merged reference node or to select between redundant arrays of reference bit cells for coupling to the reference node.
    • 在磁随机存取存储器(MRAM)中,参考位单元的多个阵列通过将它们各自的位线耦合到合并的参考节点而耦合在一起。 耦合在相应的参考位线和合并的参考节点之间的通过门电路被配置用于选择性地将一个或多个参考位线耦合或去耦合到合并的参考节点。 传递门电路可通过编程耦合到通路电路的一次可编程器件来控制。 一次性可编程器件可以被编程为将参考位单元的有缺陷的阵列与合并的参考节点去耦,或者在用于耦合到参考节点的参考位单元的冗余阵列之间进行选择。