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1. 发明申请

US20090261434A1 STT MRAM Magnetic Tunnel Junction Architecture and Integration 有权
标题翻译： STT MRAM磁隧道结结构与集成
公开(公告)号：US20090261434A1
公开(公告)日：2009-10-22
申请号：US12355941
申请日：2009-01-19
申请人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
发明人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) in a semiconductor back-end-of-line (BEOL) process flow includes a first metal interconnect for communicating with at least one control device and a first electrode for coupling to the first metal interconnect through a via formed in a dielectric passivation barrier using a first mask. The device also includes an MTJ stack for storing data coupled to the first electrode, a portion of the MTJ stack having lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a same lateral dimension as defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second metal interconnect is coupled to the second electrode and at least one other control device.
摘要翻译：半导体后端工艺流程中用于磁性随机存取存储器（MRAM）的磁隧道结（MTJ）装置包括用于与至少一个控制装置通信的第一金属互连和用于与至少一个控制装置通信的第一电极通过使用第一掩模在介电钝化屏障中形成的通孔耦合到第一金属互连。该装置还包括用于存储耦合到第一电极的数据的MTJ堆叠，MTJ堆叠的一部分具有基于第二掩模的侧向尺寸。由第二掩模限定的部分在接触通孔之上。第二电极耦合到MTJ堆叠并且还具有与第二掩模所限定的相同的横向尺寸。第一电极和MTJ堆叠的一部分由第三掩模限定。第二金属互连件耦合到第二电极和至少一个其它控制装置。

2. 发明申请

US20090161422A1 Magnetic Tunnel Junction Device with Separate Read and Write Paths 有权
标题翻译：具有独立读写路径的磁隧道结设备
公开(公告)号：US20090161422A1
公开(公告)日：2009-06-25
申请号：US11959797
申请日：2007-12-19
申请人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
发明人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
IPC分类号： G11C11/00 , H01L21/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , Y10S977/933 , Y10S977/935
摘要： In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the MTJ structure. The write path is separate from the read path.
摘要翻译：在一个实施例中，公开了一种包括磁隧道结（MTJ）结构的装置。该设备还包括耦合到MTJ结构的读取路径和耦合到MTJ结构的写入路径。写入路径与读取路径分开。

3. 发明授权

US08564079B2 STT MRAM magnetic tunnel junction architecture and integration 有权
标题翻译： STT MRAM磁隧道结结构和集成
公开(公告)号：US08564079B2
公开(公告)日：2013-10-22
申请号：US12355941
申请日：2009-01-19
申请人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
发明人： Seung H. Kang , Xia Li , Shiqun Gu , Kangho Lee , Xiaochun Zhu
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic tunnel junction (MTJ) device for a magnetic random access memory (MRAM) in a semiconductor back-end-of-line (BEOL) process flow includes a first metal interconnect for communicating with at least one control device and a first electrode for coupling to the first metal interconnect through a via formed in a dielectric passivation barrier using a first mask. The device also includes an MTJ stack for storing data coupled to the first electrode, a portion of the MTJ stack having lateral dimensions based upon a second mask. The portion defined by the second mask is over the contact via. A second electrode is coupled to the MTJ stack and also has a same lateral dimension as defined by the second mask. The first electrode and a portion of the MTJ stack are defined by a third mask. A second metal interconnect is coupled to the second electrode and at least one other control device.
摘要翻译：半导体后端工艺流程中用于磁性随机存取存储器（MRAM）的磁隧道结（MTJ）装置包括用于与至少一个控制装置通信的第一金属互连和用于与至少一个控制装置通信的第一电极通过使用第一掩模在介电钝化屏障中形成的通孔耦合到第一金属互连。该装置还包括用于存储耦合到第一电极的数据的MTJ堆叠，MTJ堆叠的一部分具有基于第二掩模的侧向尺寸。由第二掩模限定的部分在接触通孔之上。第二电极耦合到MTJ堆叠并且还具有与第二掩模所限定的相同的横向尺寸。第一电极和MTJ堆叠的一部分由第三掩模限定。第二金属互连件耦合到第二电极和至少一个其他控制装置。

4. 发明授权

US08004881B2 Magnetic tunnel junction device with separate read and write paths 有权
标题翻译：具有独立读写路径的磁隧道结设备
公开(公告)号：US08004881B2
公开(公告)日：2011-08-23
申请号：US11959797
申请日：2007-12-19
申请人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
发明人： Xiaochun Zhu , Shiqun Gu , Xia Li , Seung H. Kang
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , Y10S977/933 , Y10S977/935
摘要： In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path coupled to the MTJ structure and a write path coupled to the MTJ structure. The write path is separate from the read path.
摘要翻译：在一个实施例中，公开了一种包括磁隧道结（MTJ）结构的装置。该设备还包括耦合到MTJ结构的读取路径和耦合到MTJ结构的写入路径。写入路径与读取路径分开。

5. 发明授权

US09368716B2 Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ 有权
标题翻译：具有MTJ的磁隧道结（MTJ）存储元件和具有MTJ的自旋传递转矩磁阻随机存取存储器（STT-MRAM）
公开(公告)号：US09368716B2
公开(公告)日：2016-06-14
申请号：US12363886
申请日：2009-02-02
申请人： Shiqun Gu , Seung H. Kang , Xiaochun Zhu
发明人： Shiqun Gu , Seung H. Kang , Xiaochun Zhu
IPC分类号： H01L27/22 , H01L43/12 , H01L29/82 , H01L27/24 , H01L43/08
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L27/24 , H01L29/82 , H01L43/08
摘要： A magnetic tunnel junction storage element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) bit cell includes a bottom electrode layer, a pinned layer adjacent to the bottom electrode layer, a dielectric layer encapsulating a portion of the bottom electrode layer and the pinned layer, the dielectric layer including sidewalls that define a hole adjacent to a portion of the pinned layer, a tunneling barrier adjacent to the pinned layer, a free layer adjacent to the tunneling barrier, and a top electrode adjacent to the free layer, wherein a width of the bottom electrode layer and/or the pinned barrier in a first direction is greater than a width of a contact area between the pinned layer and the tunneling barrier in the first direction. Also a method of forming an STT-MRAM bit cell.
摘要翻译：用于自旋传递转矩磁阻随机存取存储器（STT-MRAM）位单元的磁性隧道结存储元件包括底部电极层，与底部电极层相邻的被钉扎层，封装底部电极层的一部分的电介质层和被钉扎层，介电层包括限定与被钉扎层的一部分相邻的孔的侧壁，与被钉扎层相邻的隧道势垒，邻近隧道势垒的自由层和与自由层相邻的顶部电极，其中所述底电极层和/或所述被钉扎的屏障在第一方向上的宽度大于所述被钉扎层和所述隧道势垒之间在所述第一方向上的接触面积的宽度。也是形成STT-MRAM位单元的方法。

6. 发明申请

US20100193888A1 Magnetic Tunnel Junction (MTJ) Storage Element and Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) Cells Having an MJT 有权
标题翻译：具有MJT的磁隧道结（MTJ）存储元件和自旋转移扭矩磁阻随机存取存储器（STT-MRAM）
公开(公告)号：US20100193888A1
公开(公告)日：2010-08-05
申请号：US12363886
申请日：2009-02-02
申请人： Shiqun Gu , Seung H. Kang , Xiaochun Zhu
发明人： Shiqun Gu , Seung H. Kang , Xiaochun Zhu
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/12 , H01L27/222 , H01L27/228 , H01L27/24 , H01L29/82 , H01L43/08
摘要： A magnetic tunnel junction storage element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) bit cell includes a bottom electrode layer, a pinned layer adjacent to the bottom electrode layer, a dielectric layer encapsulating a portion of the bottom electrode layer and the pinned layer, the dielectric layer including sidewalls that define a hole adjacent to a portion of the pinned layer, a tunneling barrier adjacent to the pinned layer, a free layer adjacent to the tunneling barrier, and a top electrode adjacent to the free layer, wherein a width of the bottom electrode layer and/or the pinned barrier in a first direction is greater than a width of a contact area between the pinned layer and the tunneling barrier in the first direction. Also a method of forming an STT-MRAM bit cell.
摘要翻译：用于自旋传递转矩磁阻随机存取存储器（STT-MRAM）位单元的磁性隧道结存储元件包括底部电极层，与底部电极层相邻的被钉扎层，封装底部电极层的一部分的电介质层和被钉扎层，介电层包括限定与被钉扎层的一部分相邻的孔的侧壁，与被钉扎层相邻的隧道势垒，邻近隧道势垒的自由层和与自由层相邻的顶部电极，其中所述底电极层和/或所述被钉扎的屏障在第一方向上的宽度大于所述被钉扎层和所述隧道势垒之间在所述第一方向上的接触面积的宽度。也是形成STT-MRAM位单元的方法。

7. 发明授权

US08536669B2 Magnetic element with storage layer materials 有权
标题翻译：磁性元件与存储层材料
公开(公告)号：US08536669B2
公开(公告)日：2013-09-17
申请号：US12352648
申请日：2009-01-13
申请人： Xiaochun Zhu , Xia Li , Seung H. Kang
发明人： Xiaochun Zhu , Xia Li , Seung H. Kang
IPC分类号： H01L29/82 , G11B5/33 , G11C11/02
CPC分类号： H01L43/10 , G11C11/161 , H01L43/12
摘要： According to an embodiment of the invention, a magnetic tunnel junction (MTJ) element includes a reference ferromagnetic layer, a storage ferromagnetic layer, and an insulating layer. The storage ferromagnetic layer includes a CoFeB sub-layer coupled to a CoFe sub-layer and/or a NiFe sub-layer through a non-magnetic sub-layer. The insulating layer is disposed between the reference and storage ferromagnetic layers.
摘要翻译：根据本发明的实施例，磁性隧道结（MTJ）元件包括参考铁磁层，存储铁磁层和绝缘层。存储铁磁层包括通过非磁性子层耦合到CoFe子层和/或NiFe子层的CoFeB子层。绝缘层设置在参考和存储铁磁层之间。

8. 发明授权

US08421137B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08421137B2
公开(公告)日：2013-04-16
申请号：US12769353
申请日：2010-04-28
申请人： Xia Li , Seung H. Kang , Xiaochun Zhu
发明人： Xia Li , Seung H. Kang , Xiaochun Zhu
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L43/12 , G11C11/16 , H01L21/022 , H01L21/02282 , H01L21/312 , H01L21/31612 , H01L21/6715 , H01L27/222
摘要： A device includes a magnetic tunnel junction (MTJ) structure and a cap layer in contact with the MTJ structure. The device also includes a spin-on material layer in contact with a sidewall portion of the cap layer and a conducting layer in contact with at least the spin-on material layer and a portion of the MTJ structure. The cap layer has been etched to expose a portion of an electrode contact layer of the MTJ structure. The conducting layer is in electrical contact with the exposed portion of the electrode contact layer of the MTJ structure.
摘要翻译：一种装置包括磁隧道结（MTJ）结构和与MTJ结构接触的盖层。该装置还包括与盖层的侧壁部分接触的旋涂材料层和与至少旋涂材料层和MTJ结构的一部分接触的导电层。已经蚀刻了盖层以暴露MTJ结构的电极接触层的一部分。导电层与MTJ结构的电极接触层的暴露部分电接触。

9. 发明申请

US20120218805A1 Configurable Memory Array 有权
标题翻译：可配置内存阵列
公开(公告)号：US20120218805A1
公开(公告)日：2012-08-30
申请号：US13034763
申请日：2011-02-25
申请人： Jung Pill Kim , Hari M. Rao , Xiaochun Zhu , Xia Li , Seung H. Kang
发明人： Jung Pill Kim , Hari M. Rao , Xiaochun Zhu , Xia Li , Seung H. Kang
IPC分类号： G11C5/06 , H05K13/00 , G11C29/08 , G11C11/00 , G11C7/00
CPC分类号： G11C11/1677 , G11C8/08 , G11C8/14 , G11C11/16 , G11C11/161 , G11C29/18 , G11C29/30 , G11C2029/1202 , G11C2029/2602 , H01L43/12
摘要： Embodiments disclosed include a memory array having a plurality of bit lines and a plurality of source lines disposed in columns. A plurality of word lines is disposed in rows. A plurality of storage elements have a first subset of storage elements electrically decoupled from the memory array and a second subset of storage elements coupled to the memory array. The memory array further includes a plurality of bit cells, each including one storage element from the second subset of storage elements coupled to at least two transistors. The bit cells are coupled to the plurality of bit lines and the plurality source lines. Each transistor is coupled to one word line. The memory array can further include logic to select a high performance mode and a high density mode.
摘要翻译：所公开的实施例包括具有多个位线和多个排列成列的源极线的存储器阵列。多行字线被排列成行。多个存储元件具有与存储器阵列电分离的存储元件的第一子集和耦合到存储器阵列的存储元件的第二子集。存储器阵列还包括多个位单元，每个位单元包括来自耦合到至少两个晶体管的存储元件的第二子集的一个存储元件。位单元耦合到多个位线和多个源极线。每个晶体管耦合到一个字线。存储器阵列还可以包括选择高性能模式和高密度模式的逻辑。

10. 发明申请

US20120107966A1 MAGNETIC TUNNEL JUNCTION DEVICE AND FABRICATION 有权
标题翻译：磁性隧道连接装置和制造
公开(公告)号：US20120107966A1
公开(公告)日：2012-05-03
申请号：US13349633
申请日：2012-01-13
申请人： Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
发明人： Kangho Lee , Xiaochun Zhu , Xia Li , Seung H. Kang
IPC分类号： H01L21/02 , G06F9/45
CPC分类号： H01L43/02 , B82Y25/00 , B82Y40/00 , G06F17/5068 , H01F10/3254 , H01F10/329 , H01F41/309 , H01F41/32 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A magnetic tunneling junction device and fabrication method is disclosed. In a particular embodiment, the method includes depositing a capping material on a free layer of a magnetic tunneling junction structure to form the capping layer and oxidizing a portion of the capping material to form a layer of oxidized material.
摘要翻译：公开了一种磁性隧道接合装置及其制造方法。在一个具体实施方案中，该方法包括在磁性隧道结结构的自由层上沉积封盖材料以形成覆盖层并氧化封盖材料的一部分以形成一层氧化材料。

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