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1. 发明授权

US08344346B2 Semiconductor device having resistive device 有权
标题翻译：具有电阻器件的半导体器件
公开(公告)号：US08344346B2
公开(公告)日：2013-01-01
申请号：US13073521
申请日：2011-03-28
申请人： Seung Beom Baek , Ja Chun Ku , Young Ho Lee , Jin Hyock Kim
发明人： Seung Beom Baek , Ja Chun Ku , Young Ho Lee , Jin Hyock Kim
IPC分类号： H01L29/02 , H01L29/06 , G11C11/00
CPC分类号： H01L27/249 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146
摘要： A semiconductor memory device includes a plurality of word lines vertically formed on a surface of a semiconductor substrate, where each pair of the plurality of word lines form a set of word lines, a bit line formed parallel to the surface of the semiconductor substrate and disposed in plurality stacked between the word lines of each pair constituting the one set of word lines, and unit memory cells disposed between respective ones of the bit lines and an adjacent one of the pair of word lines of said one of the word line sets.
摘要翻译：半导体存储器件包括垂直形成在半导体衬底的表面上的多个字线，其中每对多条字线形成一组字线，平行于半导体衬底的表面形成的位线，多个堆叠在构成所述一组字线的每一对的字线之间，以及设置在所述一个字线组中的所述位线中的相应位线与所述一对字线中的相邻一个之间的单元存储单元。

2. 发明申请

US20120153247A1 SEMICONDUCTOR DEVICE HAVING RESISTIVE DEVICE 有权
标题翻译：具有电阻器件的半导体器件
公开(公告)号：US20120153247A1
公开(公告)日：2012-06-21
申请号：US13073521
申请日：2011-03-28
申请人： Seung Beom BAEK , Ja Chun Ku , Young Ho Lee , Jin Hyock Kim
发明人： Seung Beom BAEK , Ja Chun Ku , Young Ho Lee , Jin Hyock Kim
IPC分类号： H01L45/00
CPC分类号： H01L27/249 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146
摘要： A semiconductor memory device includes a plurality of word lines vertically formed on a surface of a semiconductor substrate, where each pair of the plurality of word lines form a set of word lines, a bit line formed parallel to the surface of the semiconductor substrate and disposed in plurality stacked between the word lines of each pair constituting the one set of word lines, and unit memory cells disposed between respective ones of the bit lines and an adjacent one of the pair of word lines of said one of the word line sets.
摘要翻译：半导体存储器件包括垂直形成在半导体衬底的表面上的多个字线，其中每对多条字线形成一组字线，平行于半导体衬底的表面形成的位线，多个堆叠在构成所述一组字线的每一对的字线之间，以及设置在所述一个字线组中的所述位线中的相应位线与所述一对字线中的相邻一个之间的单元存储单元。

3. 发明申请

US20110107968A1 SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体制造设备
公开(公告)号：US20110107968A1
公开(公告)日：2011-05-12
申请号：US12674578
申请日：2007-09-14
申请人： Taek Yong Jang , Byung Il Lee , Young Ho Lee , Seung Beom Baek
发明人： Taek Yong Jang , Byung Il Lee , Young Ho Lee , Seung Beom Baek
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46
CPC分类号： H01L21/68792 , C23C16/45521 , C23C16/4588 , C23C16/54 , C30B25/14 , C30B29/06 , H01L21/68721 , H01L21/68785
摘要： A semiconductor manufacturing apparatus includes: a reaction chamber for providing an airtight process space; a boat for loading/unloading a pair of semiconductor substrates into/from the reaction chamber, wherein the boat includes susceptors and rotary tables to be rotatably supported by a plurality of supporting rollers, each semiconductor substrate being mounted onto each susceptor and each susceptor being mounted onto each rotary table, respectively; heaters, arranged at backsides of the semiconductor substrates, for performing an epitaxial process in the reaction chamber; a process gas nozzle, installed to encircle an upper fringe of the semiconductor substrates; an exhaust gas nozzle, installed to encircle a lower fringe of the semiconductor substrates; and a purge gas nozzle for supplying a purge gas capable of preventing an outer wall of the process gas nozzle from being deposited, wherein the purge gas nozzle is arranged near to the process gas nozzle.
摘要翻译：半导体制造装置包括：用于提供气密处理空间的反应室; 用于将一对半导体基板装载到反应室中的船，其中，所述船包括由多个支撑辊可旋转地支撑的基座和旋转台，每个半导体基板安装在每个基座上，并且每个基座被安装分别在每个旋转台上; 加热器，布置在半导体衬底的背面，用于在反应室中进行外延工艺; 工艺气体喷嘴，其安装成环绕半导体衬底的上边缘; 排气喷嘴，安装成环绕半导体衬底的下边缘; 以及用于供给能够防止工艺气体喷嘴的外壁的吹扫气体的吹扫气体喷嘴，其中吹扫气体喷嘴设置在工艺气体喷嘴附近。

4. 发明授权

US08890104B2 Resistive memory device and fabrication method thereof 有权
标题翻译：电阻式存储器件及其制造方法
公开(公告)号：US08890104B2
公开(公告)日：2014-11-18
申请号：US13598244
申请日：2012-08-29
申请人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
发明人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
IPC分类号： H01L29/02
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2481 , H01L29/6609 , H01L29/861 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit.
摘要翻译：提供了一种电阻式存储器件及其制造方法。电阻式存储器件包括形成在其上形成底部结构的半导体衬底上的可变电阻层，形成在可变电阻层上的下电极，形成在下电极上的开关单元和形成在开关单元上的上电极。

5. 发明申请

US20130228733A1 RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：电阻式存储器件及其制造方法
公开(公告)号：US20130228733A1
公开(公告)日：2013-09-05
申请号：US13598244
申请日：2012-08-29
申请人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
发明人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2481 , H01L29/6609 , H01L29/861 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit.
摘要翻译：提供了一种电阻式存储器件及其制造方法。电阻式存储器件包括形成在其上形成底部结构的半导体衬底上的可变电阻层，形成在可变电阻层上的下电极，形成在下电极上的开关单元和形成在开关单元上的上电极。

6. 发明授权

US08541775B2 Schottky diode, resistive memory device having schottky diode and method of manufacturing the same 失效
标题翻译：肖特基二极管，具有肖特基二极管的电阻式存储器件及其制造方法
公开(公告)号：US08541775B2
公开(公告)日：2013-09-24
申请号：US13331698
申请日：2011-12-20
申请人： Seung Beom Baek , Young Ho Lee , Jin Ku Lee , Mi Ri Lee
发明人： Seung Beom Baek , Young Ho Lee , Jin Ku Lee , Mi Ri Lee
IPC分类号： H01L21/02
CPC分类号： H01L27/101 , H01L27/1021 , H01L27/2409 , H01L29/872 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/1683
摘要： A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer.
摘要翻译：肖特基二极管，包括肖特基二极管的电阻式存储器件及其制造方法。电阻式存储器件包括一个包括字线，形成在字线上的肖特基二极管和形成在肖特基二极管上的存储层的半导体衬底。肖特基二极管包括第一半导体层，形成在第一半导体层上并具有比第一半导体层低的功函数的导电层和形成在导电层上的第二半导体层。

7. 发明申请

US20110001576A1 POWER AMPLIFIER MODULE 审中-公开
标题翻译：功率放大器模块
公开(公告)号：US20110001576A1
公开(公告)日：2011-01-06
申请号：US12497601
申请日：2009-07-03
申请人： Young Ho Lee , Sun Young Lee , Young Kwon
发明人： Young Ho Lee , Sun Young Lee , Young Kwon
IPC分类号： H01P5/18
CPC分类号： H01P5/187
摘要： A power amplifier module comprises a power amplifier disposed in a coreless substrate and a directional coupler disposed in a coreless substrate and connected to the power amplifier.
摘要翻译：功率放大器模块包括设置在无芯基板中的功率放大器和布置在无芯基板中并连接到功率放大器的定向耦合器。

8. 发明申请

US20100128835A1 INTERMEDIATE END PLUG ASSEMBLY FOR SEGMENTED FUEL ROD AND SEGMENTED FUEL ROD HAVING THE SAME 有权
标题翻译：用于分离燃料的中间端部组件和具有相同功能的分离燃料
公开(公告)号：US20100128835A1
公开(公告)日：2010-05-27
申请号：US12420874
申请日：2009-04-09
申请人： Kyung Ho Yoon , Jae Yong Kim , Young Ho Lee , Kun Woo Song , Tae Hyun Chun , Dong Seok Oh , Wang Ki In , Hyung Kyu Kim , Chang Hwan Shin , Kang Hee Lee
发明人： Kyung Ho Yoon , Jae Yong Kim , Young Ho Lee , Kun Woo Song , Tae Hyun Chun , Dong Seok Oh , Wang Ki In , Hyung Kyu Kim , Chang Hwan Shin , Kang Hee Lee
IPC分类号： G21C3/30
CPC分类号： G21C3/322 , G21C3/33 , Y02E30/38
摘要： An intermediate end plug assembly for a segmented fuel rod can stably support the fuel rod to the end of its cycle even if an interval between the fuel rods becomes narrow due to application of a dual-cooled fuel rod, and reduce excess vibration induced by flows of interior and exterior channels of the dual-cooled fuel rod for obtaining high burnup and output. To this end, the fuel rod has a segmented structure so as to make its length short. A lower intermediate end plug includes at least one channel hole, through which a coolant flows into an internal channel of the fuel rod, so that a possibility of causing departure from nuclear boiling ratio (DNBR) of the dual-cooled fuel rod is reduced.
摘要翻译：用于分段燃料棒的中间端塞组件即使燃料棒之间的间隔由于施加双重冷却燃料棒而变窄，也可以稳定地将燃料棒支撑到其循环结束，并减少由流动引起的过量振动的双冷却燃料棒的内部和外部通道，以获得高燃耗和输出。为此，燃料棒具有分段结构以使其长度短。下部中间端塞包括至少一个通道孔，冷却剂通过该通道孔流入燃料棒的内部通道，从而降低了双重冷却燃料棒的核沸腾比（DNBR）的可能性。

9. 发明授权

US07525068B2 Heating system of batch type reaction chamber and method thereof 有权
标题翻译：分批式反应室加热系统及其方法
公开(公告)号：US07525068B2
公开(公告)日：2009-04-28
申请号：US11513732
申请日：2006-08-31
申请人： Taek Yong Jang , Byoung Il Lee , Young Ho Lee
发明人： Taek Yong Jang , Byoung Il Lee , Young Ho Lee
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D3/0084 , H01L21/67109 , H01L21/67115
摘要： A heating system of a batch type reaction chamber for semiconductor device and a method thereof are disclosed. Each heat unit of heating groups has different height and caloric value at right angles according to the divided areas, thereby it can control an uniform temperature incline of the entire process space of the reaction chamber. Also, the reflecting plates are formed by each heating unit, so that the change of the heating unit can be simple. Furthermore, the divided reflecting blocks are adjacently connected to another reflecting block through the radiant wave shielding slit between them, so that the leakage of the radiant wave can be prevented and the reflecting blocks can be separately attached and deattached to each other. Also, the turning member is formed at the lower portion of the reflecting blocks, so that it can be easily attached and deattached.
摘要翻译：公开了一种用于半导体器件的间歇式反应室的加热系统及其方法。加热组的每个加热单元根据分割区域具有不同的高度和直角热值，从而可以控制反应室整个工艺空间的均匀温度倾斜。此外，反射板由每个加热单元形成，使得加热单元的变化可以简单。此外，分割的反射块通过它们之间的辐射波屏蔽狭缝相邻地连接到另一个反射块，从而可以防止辐射波的泄漏，并且可以将反射块分开地附接和脱附。此外，转动构件形成在反射块的下部，使得其可以容易地附接和脱附。

10. 发明授权

US07281328B2 Method of fabricating rigid-flexible printed circuit board 有权
标题翻译：刚性柔性印刷电路板的制造方法
公开(公告)号：US07281328B2
公开(公告)日：2007-10-16
申请号：US11253973
申请日：2005-10-18
申请人： Yang Je Lee , Dek Gin Yang , Jung Wook Hwang , Kyu Hyok Yim , Jung Hun Chai , Young Ho Lee , Kwang Yune Kim , Dong Gi An
发明人： Yang Je Lee , Dek Gin Yang , Jung Wook Hwang , Kyu Hyok Yim , Jung Hun Chai , Young Ho Lee , Kwang Yune Kim , Dong Gi An
IPC分类号： H01K3/10
CPC分类号： H05K3/4691 , H05K3/28 , H05K3/4652 , H05K2201/09127 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165
摘要： The present invention is related to a method of fabricating a rigid-flexible printed circuit board. Specifically, this invention relates to a method of fabricating a rigid-flexible printed circuit board, in which an internal circuit pattern exposed for use in an external pad and a mounting pad is protected from external environments using a resist cover by window etching the base copper foil of a flexible region upon formation of an external circuit pattern as opposed to using a resist cover. Thus the number of fabrication processes and the fabrication costs are decreased and the increase in defect rates due to contamination is prevented, resulting in maximized reliability.
摘要翻译：本发明涉及制造刚挠柔性印刷电路板的方法。具体地说，本发明涉及一种刚性柔性印刷电路板的制造方法，其中使用外部焊盘和安装焊盘露出的内部电路图案通过窗口蚀刻基底铜而被保护免受外部环境的影响在形成外部电路图案时，与使用抗蚀剂盖相反，柔性区域的箔片。因此，制造工艺的数量和制造成本降低，并且防止了由于污染引起的缺陷率的增加，导致最大的可靠性。

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