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1. 发明授权

US5834730A Plasma processing equipment and gas discharging device 失效
标题翻译：等离子体处理设备和排气装置
公开(公告)号：US5834730A
公开(公告)日：1998-11-10
申请号：US792138
申请日：1997-01-31
申请人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
发明人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32009 , H01J37/32082
摘要： A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.
摘要翻译：提供一种气体放电装置，其具有用于使反应气体质量化的相对电极之一的功能，并且利用等离子体气体执行成膜和蚀刻。该装置包括在其中心部分具有凹部的基体和用于将气体引入凹部的通孔，设置在凹部中的用于沿径向引入气体的气体分配板，以及环形气体用于排出由气体分配板引入的气体的排出构件。

2. 发明授权

US06900144B2 Film-forming surface reforming method and semiconductor device manufacturing method 失效
标题翻译：成膜表面改性法和半导体器件的制造方法
公开(公告)号：US06900144B2
公开(公告)日：2005-05-31
申请号：US09808016
申请日：2001-03-15
申请人： Kazuo Maeda , Setsu Suzuki , Takayoshi Azumi , Kiyotaka Sasaki
发明人： Kazuo Maeda , Setsu Suzuki , Takayoshi Azumi , Kiyotaka Sasaki
IPC分类号： H01L21/20 , C23C16/02 , C23C16/34 , C23C16/40 , H01L21/302 , H01L21/316 , H01L21/31
CPC分类号： C23C16/402 , C23C16/0227 , H01L21/02164 , H01L21/02271 , H01L21/02304 , H01L21/02307 , H01L21/31612 , H01L21/31654
摘要： A film-forming surface reforming method includes the steps of bringing a gas or an aqueous solution containing ammonia, hydrazine, an amine, an amino compound or a derivative thereof into contact with the film-forming surface before an insulating film is formed on the film-forming surface, and bringing a gas or an aqueous solution containing Hydrogen peroxide, ozone, Oxygen, nitric acid, sulfuric acid or a derivative thereof into contact with the film-forming surface.
摘要翻译：成膜表面改性方法包括以下步骤：在膜上形成绝缘膜之前，使含有氨，肼，胺，氨基化合物或其衍生物的气体或水溶液与成膜表面接触使含有过氧化氢，臭氧，氧，硝酸，硫酸或其衍生物的气体或水溶液与成膜表面接触。

3. 发明授权

US06548426B1 Method for improving a quality of dielectric layer and semiconductor device 失效
公开(公告)号：US06548426B1
公开(公告)日：2003-04-15
申请号：US09625355
申请日：2000-07-25
申请人： Setsu Suzuki , Kazuo Maeda
发明人： Setsu Suzuki , Kazuo Maeda
IPC分类号： H02L2131
CPC分类号： H01L21/02164 , H01L21/02271 , H01L21/02337 , H01L21/3105 , H01L21/31612
摘要： There is provided a method for improving film quality of an insulating film, which includes the steps of forming a silicon oxide film on a substrate, and heating the silicon oxide film by contacting an exposed surface of the silicon oxide film with a steam-containing atmosphere after the silicon oxide film is formed.

4. 发明授权

US6133162A Method of forming a film by using plasmanized process gas containing gaseous H.sub.2 O and an auxiliary gas in a semiconductor device 失效
标题翻译：通过在半导体器件中使用含有气态H 2 O和辅助气体的质子化处理气体形成膜的方法
公开(公告)号：US6133162A
公开(公告)日：2000-10-17
申请号：US897439
申请日：1997-07-21
申请人： Setsu Suzuki , Junichi Aoki , Kazuo Maeda
发明人： Setsu Suzuki , Junichi Aoki , Kazuo Maeda
IPC分类号： H01L21/302 , H01L21/306 , H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02068 , H01L21/02164 , H01L21/02271 , H01L21/02301 , H01L21/02304 , H01L21/02315 , H01L21/31612
摘要： There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H.sub.2 O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H.sub.2 O.
摘要翻译：提供了在形成有互连层等的基板101上通过热CVD法形成含硅绝缘膜等时使用的成膜预处理方法。在绝缘膜沉积在衬底101上之前，将气态H 2 O质子化，然后将衬底101的表面暴露于这种质子化的H 2 O.

5. 发明授权

US08622661B2 Tool with internal fluid passage 有权
标题翻译：具有内部流体通道的工具
公开(公告)号：US08622661B2
公开(公告)日：2014-01-07
申请号：US12645669
申请日：2009-12-23
申请人： Yasuhiro Inamasu , Morihiro Hideta , Kazuo Maeda , Hideo Mori
发明人： Yasuhiro Inamasu , Morihiro Hideta , Kazuo Maeda , Hideo Mori
IPC分类号： B23Q11/00
CPC分类号： B23C5/28 , B23C5/10 , B23C2230/08 , B23Q11/0046 , Y10T407/14 , Y10T408/50 , Y10T409/304088
摘要： A tool has a shank and a cutting blade mounted on the shank. The tool also includes an internal fluid passage for drawing in, together with air, chips produced when the cutting blade machines a workpiece. The internal fluid passage comprises a through hole made in the shank, at least one main inlet hole for drawing in the chips together with the air, the main inlet hole being made in the cutting blade and being in fluid communication with the through hole, and at least one sub-inlet hole for drawing in at least the air, the sub-inlet hole being made in the shank and being in fluid communication with the through hole. The chips can efficiently be discharged from the tool without being deposited in the internal fluid passage, by the air which flows at a suitable speed through the internal fluid passage and draws the chips, regardless of the diameter of the tool.
摘要翻译：工具具有柄和安装在柄上的切割刀片。该工具还包括内部流体通道，用于与空气一起拉入当切割刀片加工工件时产生的切屑。内部流体通道包括在柄中形成的通孔，至少一个用于与空气一起拉入切屑的主入口孔，主入口孔形成在切割刀片中并与通孔流体连通，以及至少一个用于至少吸入空气的副进气孔，所述副进气孔制成在所述杆中并与所述通孔流体连通。芯片可以有效地从工具排出，而不会沉积在内部流体通道中，空气以合适的速度通过内部流体通道流动，并且不管工具的直径如何，都可以抽出切屑。

6. 发明授权

US07878739B2 Cubic boron nitride radius end mill 有权
标题翻译：立方氮化硼半径立铣刀
公开(公告)号：US07878739B2
公开(公告)日：2011-02-01
申请号：US12415552
申请日：2009-03-31
申请人： Kazuo Maeda
发明人： Kazuo Maeda
IPC分类号： B23P15/28 , B23B27/00
CPC分类号： B23C5/10 , B23C2210/0421 , B23C2210/123 , B23C2210/321 , B23C2226/125 , B23C2240/08 , Y10T407/1904 , Y10T407/27
摘要： A cubic boron nitride radius end mill includes a sintered cubic boron nitride compact bonded to an end of a main body, and a cutting edge provided on the sintered cubic boron nitride compact. The wedge angle θt of the cutting edge is constant over the entire region of the cutting edge. A negative rake face is disposed on a face so as to extend over the entire region of the cutting edge, and the rake angle θn of the negative rake face satisfies the relationship −30°≦θn≦−50°. A joint cutting edge is disposed between an end cutting edge and a radius cutting edge in the cutting edge, the joint cutting edge having a concave angle γ0 which is smaller than the concave angle γ1 of the end cutting edge and which satisfies the relationship 0.5°≦γ0≦2°.
摘要翻译：立方氮化硼半径立铣刀包括结合到主体的端部的烧结立方氮化硼压块和设置在立方氮化硼烧结体上的切削刃。切削刃的楔角和角度t在切削刃的整个区域是恒定的。负面的前刀面布置在面上，以便在切削刃的整个区域上延伸，并且负前刀面的前角＆lt; n与n的关系满足-30°＆nlE;＆amp; n＆nlE; -50°的关系。在切削刃的端部切削刃和半径切削刃之间配置有切削刃，该切削刃具有比端部切削刃的凹入角度γ1小的凹角γ0，并且满足0.5°的关系＆nlE;γ0＆nlE; 2°。

7. 发明授权

US07325889B2 Track having rotatable bushing and link for the same 有权
标题翻译：轨道具有可旋转的衬套和连杆
公开(公告)号：US07325889B2
公开(公告)日：2008-02-05
申请号：US10727573
申请日：2003-12-05
申请人： Teiji Yamamoto , Kazuo Maeda
发明人： Teiji Yamamoto , Kazuo Maeda
IPC分类号： B62D55/21
CPC分类号： B62D55/21
摘要： In a track with a rotatable bushing which is brought into engagement with a sprocket of a track-type vehicle, it is intended that strength is enhanced rationally by link functionality sharing and by combination of such assigned functional tasks for achieving further improvements in rotatable bushing function. To this end, a track link comprises a combination of an external link and an internal link; a coupler pin hole is provided through the external link; a bushing hole is provided through the internal link, and the thickness dimension of a bushing hole formation part of the internal link is made greater than that of a coupler pin formation part of the external link.
摘要翻译：在具有与轨道式车辆的链轮接合的可旋转衬套的轨道中，旨在通过链接功能共享和通过组合这些分配的功能任务来合理地增强强度，以实现可旋转衬套功能的进一步改进。为此，轨道链路包括外部链路和内部链路的组合; 通过外部连杆设置连接销孔; 通过内部连杆提供衬套孔，并且内部连杆的衬套孔形成部分的厚度尺寸大于外部连杆的联接销形成部分的厚度尺寸。

8. 发明申请

US20050221622A1 Deposition method and semiconductor device 审中-公开
标题翻译：沉积法和半导体器件
公开(公告)号：US20050221622A1
公开(公告)日：2005-10-06
申请号：US11090272
申请日：2005-03-28
申请人： Yoshimi Shioya , Haruo Shimoda , Kazuo Maeda
发明人： Yoshimi Shioya , Haruo Shimoda , Kazuo Maeda
IPC分类号： C23C16/42 , C09D4/00 , C23C16/40 , C23C16/509 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/469 , H01L21/4763
CPC分类号： H01L21/3122 , C09D4/00 , C23C16/401 , C23C16/509 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02362 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L21/76835
摘要： The present invention relates to a deposition method in which an insulating film that coats wirings mainly made of copper film and has low dielectric constant. Its constitution in the deposition method, where deposition gas is transformed into plasma and reaction is caused to form the insulating film having low dielectric constant, is that the deposition gas has a first silicon containing compound having cyclic siloxane bond and at least one of methyl group and methoxy group, and a second silicon containing organic compound having straight-chain siloxane bond and at least one of methyl group and methoxy group, as primary constituent gas.
摘要翻译：本发明涉及一种沉积方法，其中涂覆主要由铜膜制成的布线并具有低介电常数的绝缘膜。使沉积气体转化为等离子体并进行反应的沉积方法的结构形成具有低介电常数的绝缘膜，即沉积气体具有含有环状硅氧烷键的第一含硅化合物和甲基的至少一种和甲氧基，以及具有直链硅氧烷键和甲基和甲氧基中的至少一个作为主要构成气体的第二含硅有机化合物。

9. 发明申请

US20050040708A1 Track having rotatable bushing and link for the same 有权
标题翻译：轨道具有可旋转的衬套和连杆
公开(公告)号：US20050040708A1
公开(公告)日：2005-02-24
申请号：US10727573
申请日：2003-12-05
申请人： Teiji Yamamoto , Kazuo Maeda
发明人： Teiji Yamamoto , Kazuo Maeda
IPC分类号： B62D55/18 , B62D55/21 , E05D7/10
CPC分类号： B62D55/21
摘要： In a track with a rotatable bushing which is brought into engagement with a sprocket of a track-type vehicle, it is intended that strength is enhanced rationally by link functionality sharing and by combination of such assigned functional tasks for achieving further improvements in rotatable bushing function. To this end, a track link comprises a combination of an external link and an internal link; a coupler pin hole is provided through the external link; a bushing hole is provided through the internal link, and the thickness dimension of a bushing hole formation part of the internal link is made greater than that of a coupler pin formation part of the external link.
摘要翻译：在具有与轨道式车辆的链轮接合的可旋转衬套的轨道中，旨在通过链接功能共享和通过组合这些分配的功能任务来合理地增强强度，以实现可旋转衬套功能的进一步改进。为此，轨道链路包括外部链路和内部链路的组合; 通过外部连杆设置连接销孔; 通过内部连杆提供衬套孔，并且内部连杆的衬套孔形成部分的厚度尺寸大于外部连杆的联接销形成部分的厚度尺寸。

10. 发明授权

US06479409B2 Fabrication of a semiconductor device with an interlayer insulating film formed from a plasma devoid of an oxidizing agent 有权
标题翻译：具有由没有氧化剂的等离子体形成的层间绝缘膜的半导体器件的制造
公开(公告)号：US06479409B2
公开(公告)日：2002-11-12
申请号：US09790568
申请日：2001-02-23
申请人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto , Yuichiro Kotake , Shoji Ohgawara , Makoto Kurotobi
发明人： Yoshimi Shioya , Kouichi Ohira , Kazuo Maeda , Tomomi Suzuki , Hiroshi Ikakura , Youichi Yamamoto , Yuichiro Kotake , Shoji Ohgawara , Makoto Kurotobi
IPC分类号： H01L2131
CPC分类号： H01L21/02115 , C23C16/30 , C23C16/5096 , H01L21/02126 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/31116 , H01L21/31633 , H01L21/76802 , H01L21/76829 , H01L21/76832 , H01L21/76837 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of fabricating a semiconductor device, in which an interlayer insulating film having a low dielectric constant is formed by coating a wiring, and either a via hole or a contact hole is formed in the interlayer insulating film. The method of fabricating a semiconductor device having the interlayer insulating film 25 formed on the film-formed substrate 21 with the exposed wiring 23, comprises the step of converting a silicon compound containing only the Si, O, C and H into a plasma gas as a film-forming gas to react the plasma gas, thus forming the block insulating film 24 containing silicon (Si), oxygen (O), carbon (C) and hydrogen (H) between the wiring 23 and the interlayer insulating film 25.
摘要翻译：公开了一种制造半导体器件的方法，其中通过涂覆布线形成具有低介电常数的层间绝缘膜，并且在层间绝缘膜中形成通孔或接触孔。制造具有形成在膜形成基板21上的层间绝缘膜25与暴露布线23的半导体器件的方法包括将仅含有Si，O，C和H的硅化合物转化成等离子体气体的步骤，使等离子体气体反应的成膜气体，从而在布线23和层间绝缘膜25之间形成含有硅（Si），氧（O），碳（C）和氢（H）的嵌段绝缘膜24。

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