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1. 发明授权

US5834730A Plasma processing equipment and gas discharging device 失效
标题翻译：等离子体处理设备和排气装置
公开(公告)号：US5834730A
公开(公告)日：1998-11-10
申请号：US792138
申请日：1997-01-31
申请人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
发明人： Setsu Suzuki , Noboru Tokumasu , Kazuo Maeda , Junichi Aoki
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32009 , H01J37/32082
摘要： A gas discharging device is provided which has a function as one of opposing electrodes to plasmanize a reaction gas and executes film formation and etching with a plasma gas. The device comprises a base body having a recess portion at its central portion and a through-hole for introducing a gas into the recess portion, a gas distributing plate provided in the recess portion for introducing the gas in a radial direction, and an annular gas discharging member for discharging the gas introduced by the gas distributing plate.
摘要翻译：提供一种气体放电装置，其具有用于使反应气体质量化的相对电极之一的功能，并且利用等离子体气体执行成膜和蚀刻。该装置包括在其中心部分具有凹部的基体和用于将气体引入凹部的通孔，设置在凹部中的用于沿径向引入气体的气体分配板，以及环形气体用于排出由气体分配板引入的气体的排出构件。

2. 发明授权

US5800877A Method for forming a fluorine containing silicon oxide film 失效
标题翻译：含氟氧化硅膜的形成方法
公开(公告)号：US5800877A
公开(公告)日：1998-09-01
申请号：US694660
申请日：1996-08-09
申请人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yoshiaki Yuyama
IPC分类号： H01L21/31 , C23C16/40 , H01L21/316 , C23C16/42 , H05H1/00
CPC分类号： H01L21/02131 , C23C16/401 , H01L21/02271 , H01L21/0234 , H01L21/31629
摘要： In a method for forming a film by thermal CVD, a fluorine-containing silicon oxide film is formed on a substrate by thermal reaction of a mixed gas while heating the substrate. The mixed gas includes an organic silane having a Si-F bond, an organic silane having no Si-F bond, and ozone.
摘要翻译：在通过热CVD形成膜的方法中，在加热基板的同时通过混合气体的热反应在基板上形成含氟氧化硅膜。混合气体包括具有Si-F键的有机硅烷，不具有Si-F键的有机硅烷和臭氧。

3. 发明授权

US5231058A Process for forming CVD film and semiconductor device 失效
标题翻译：用于形成CVD膜和半导体器件的方法
公开(公告)号：US5231058A
公开(公告)日：1993-07-27
申请号：US628237
申请日：1990-12-14
申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02129 , H01L21/02164 , H01L21/02216 , H01L21/31612 , H01L21/31625
摘要： In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO.sub.2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO.sub.2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.

4. 发明授权

US4731255A Gas-phase growth process and an apparatus for the same 失效
标题翻译：气相生长过程及其设备
公开(公告)号：US4731255A
公开(公告)日：1988-03-15
申请号：US780205
申请日：1985-09-26
申请人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama , Tsugiaki Hirata
发明人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama , Tsugiaki Hirata
IPC分类号： B05D3/06 , B05D7/24 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , C30B25/14
CPC分类号： C23C16/45504 , B05D1/60 , C23C16/455 , C23C16/482 , C23C16/488 , C30B25/105 , C30B25/14 , B05D3/061
摘要： A gas-phase growth process for growing films of uniform thickness or having a prescribed pattern form or growing films sequentially onto a substrate and an apparatus related thereto. The films are grown by allowing an inert gas to flow over a reaction gas flow in parallel to the surface of the substrate. Optionally, the substrate surface could be irradiated by a UV light source which is directed from above the inert gas toward the substrate surface.
摘要翻译：用于生长均匀厚度的膜或具有规定图案形式的膜或顺序生长膜到基板上的气相生长工艺和与其相关的装置。通过使惰性气体平行于衬底的表面流过反应气体流而生长膜。任选地，可以通过从惰性气体上方向衬底表面引导的UV光源照射衬底表面。

5. 发明授权

US4702936A Gas-phase growth process 失效
标题翻译：气相生长过程
公开(公告)号：US4702936A
公开(公告)日：1987-10-27
申请号：US778004
申请日：1985-09-20
申请人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama
发明人： Kazuo Maeda , Noboru Tokumasu , Toshihiko Fukuyama
IPC分类号： C23C16/30 , C23C16/34 , C23C16/40 , C23C16/48 , C30B25/02 , B05D3/06
CPC分类号： C23C16/482 , C23C16/308 , C23C16/345 , C23C16/401 , C23C16/402 , C30B25/02
摘要： A gas-phase growth process for forming a film of SiO.sub.2 Si.sub.3 N.sub.4 or Si.sub.x O.sub.y N.sub.z, which comprises reacting a mixture of an organic or inorganic silane with one or more reaction gases comprising O.sub.2, N.sub.2 O, NO.sub.2 NO, CO.sub.2 CO and NH.sub.3, with the proviso that the mixture of inorganic silane and O.sub.2 is excluded as a reaction gas combination of the present invention. The process comprises feeding a reaction gas into a reaction chamber which is kept at a reaction temperature below 500.degree. C., and subjecting the surface of a substrate chamber which is placed in the reaction chamber to UV irradiation. This irradiation excites the reaction gas, which allows a low-temperature gas-phase growth to proceed. The photo-excitation occurs selectively only at UV-irradiated sections, so that a film growth may occur selectively on the substrate surface within the range of UV irradiation. The optional use of a suitable mask allows a film of a prescribed pattern to be formed on the substrate surface.
摘要翻译：一种用于形成SiO 2 + L，Si 3 N 4或SixO y N z的膜的气相生长方法，其包括将有机或无机硅烷的混合物与一种或多种包含O 2，N 2 O，NO 2 + L，NO，CO 2 + L的反应气体，CO和NH 3，条件是排除无机硅烷和O 2的混合物作为本发明的反应气体组合。该方法包括将反应气体进料到保持在低于500℃的反应温度的反应室中，并将放置在反应室中的基板室的表面进行紫外线照射。该照射激发反应气体，这允许进行低温气相生长。光激发仅在UV照射部分选择性地发生，从而在UV照射的范围内，可以在衬底表面上选择性地发生膜生长。可选地使用合适的掩模允许在基板表面上形成规定图案的膜。

6. 发明授权

US6110814A Film forming method and semiconductor device manufacturing method 失效
标题翻译：成膜方法和半导体器件的制造方法
公开(公告)号：US6110814A
公开(公告)日：2000-08-29
申请号：US330052
申请日：1999-06-11
申请人： Noboru Tokumasu , Kazuo Maeda
发明人： Noboru Tokumasu , Kazuo Maeda
IPC分类号： H01L21/31 , C23C16/40 , C23C16/56 , H01L21/3105 , H01L21/316 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76819 , C23C16/401 , C23C16/56 , H01L21/31051
摘要： The present invention relates to a film forming method for forming a planarized interlayer insulating film to cover wiring layers, etc. of a semiconductor integrated circuit device. The method includes the steps of forming on a substrate 206, a phosphorus-containing insulating film 45a containing P.sub.2 O.sub.3 by using a film forming gas in which an oxidizing. gas is added into a gas mixture including a phosphorus-containing compound, which has III valence phosphorus and in which oxygen is bonded to at least one bond of the III valence phosphorus, and silicon-containing compound, or by using the film forming gas from which the oxidizing gas removed, heating the phosphorus-containing insulating film 45a while applying acceleration to the insulating film 45a to fluidize the insulating film and thus planarize a surface of the insulating film 45b while the insulating film 45a has a predetermined viscosity, and heating further the insulating film 45b after the surface of the insulating film 45b has been planarized, to sublimate P.sub.2 O.sub.3 in the insulating film 45b and thus solidify the insulating film 45b.
摘要翻译：本发明涉及一种用于形成半导体集成电路器件的布线层等的平坦化层间绝缘膜的成膜方法。该方法包括以下步骤：通过使用其中进行氧化的成膜气体，在基板206上形成含有P 2 O 3的含磷绝缘膜45a。将气体加入到含有III价态的磷的含磷化合物的气体混合物中，其中氧与III价态的磷的至少一个键结合，并且含硅化合物，或者通过使用成膜气体从除去氧化气体，同时加热含磷绝缘膜45a，同时对绝缘膜45a施加加速度，使绝缘膜流化，从而使绝缘膜45b的表面平坦化，同时绝缘膜45a具有预定的粘度，并进一步加热绝缘膜45b的表面之后的绝缘膜45b被平坦化，以使绝缘膜45b中的P2O3升华，从而固化绝缘膜45b。

7. 发明授权

US5915200A Film forming method and semiconductor device manufacturing method 失效
标题翻译：成膜方法和半导体器件的制造方法
公开(公告)号：US5915200A
公开(公告)日：1999-06-22
申请号：US842425
申请日：1997-04-24
申请人： Noboru Tokumasu , Kazuo Maeda
发明人： Noboru Tokumasu , Kazuo Maeda
IPC分类号： H01L21/768 , C23C16/40 , H01L21/316 , H01L23/522 , H01L21/443
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02271 , H01L21/02274 , H01L21/02337 , H01L21/31625
摘要： A film forming method is provided for forming a planarized interlayer insulating film for covering interconnection layers, etc. of a semiconductor integrated circuit device. While supplying a reaction gas including a phosphorus containing compound which has III valence phosphorus and at least one bond of phosphorus to oxygen, a silicon containing insulating film including P.sub.2 O.sub.3 is formed on a deposition substrate, thereby greatly reducing fluidization temperature for planarization.
摘要翻译：提供一种成膜方法，用于形成用于覆盖半导体集成电路器件的互连层等的平面化层间绝缘膜。在将含有III价磷和至少一个磷键的含磷化合物的反应气体供给到氧的同时，在沉积基板上形成包含P 2 O 3的含硅绝缘膜，从而大大降低了用于平坦化的流化温度。

8. 发明授权

US5387546A Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5387546A
公开(公告)日：1995-02-07
申请号：US902095
申请日：1992-06-22
申请人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
发明人： Kazuo Maeda , Noboru Tokumasu , Yuko Nishimoto
IPC分类号： C23C16/40 , C23C16/56 , H01L21/00 , H01L21/3105 , H01L21/316 , H01L21/768 , H01L21/306
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02129 , H01L21/02164 , H01L21/02183 , H01L21/022 , H01L21/02271 , H01L21/02348 , H01L21/3105 , H01L21/31604 , H01L21/31612 , H01L21/31625 , H01L21/76801 , H01L21/76825 , H01L21/76826 , Y10S148/003 , Y10S148/004 , Y10S148/09 , Y10S148/093
摘要： The present invention relates to a method for manufacturing a semiconductor device including a method for reforming an insulating film formed by a low temperature CVD method. It is an object of the present Invention to provide a method for manufacturing a semiconductor device capable of improving a film quality of an insulating film formed by a CVD method which is able to form a film at a low temperature and also capable of maintaining mass productivity, in which processing by irradiation with ultraviolet rays of the insulating film while heating the film after forming an insulating film (4) on a body to be formed by a chemical vapor deposition method is included.
摘要翻译：本发明涉及一种半导体器件的制造方法，其包括通过低温CVD法形成的绝缘膜的重整方法。本发明的目的是提供一种半导体器件的制造方法，该半导体器件能够提高能够在低温下形成膜并且还能够保持质量生产率的通过CVD法形成的绝缘膜的膜质量包括在通过化学气相沉积法形成的主体上形成绝缘膜（4）之后，通过在绝缘膜的紫外线照射下进行加热而加热膜的处理。

9. 发明授权

US06432839B1 Film forming method and manufacturing method of semiconductor device 有权
公开(公告)号：US06432839B1
公开(公告)日：2002-08-13
申请号：US09804142
申请日：2001-03-13
申请人： Kazuo Maeda , Noboru Tokumasu , Yuki Ishii , Toshiro Nishiyama
发明人： Kazuo Maeda , Noboru Tokumasu , Yuki Ishii , Toshiro Nishiyama
IPC分类号： H01L2131
摘要： The invention is a method for forming a flattened interlayer insulating film covering a wiring layer or the like of a semiconductor IC device, and a method of manufacturing a semiconductor device. The film-forming method includes the steps of preparing a deposition gas containing an inert gas, and a silicon and phosphorus-containing compound having III valance phosphorus in which at least one oxygen is bonded to the phosphorous, and forming a silicon containing insulating film containing P2O3 on a substrate by using the deposition gas.

10. 发明授权

US06221755B1 Film formation method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的成膜方法及其制造方法
公开(公告)号：US06221755B1
公开(公告)日：2001-04-24
申请号：US09358399
申请日：1999-07-22
申请人： Noboru Tokumasu , Kazuo Maeda
发明人： Noboru Tokumasu , Kazuo Maeda
IPC分类号： H01L214763
CPC分类号： H01L21/02129 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/02337 , H01L21/31625
摘要： Disclosed is a film formation method of an interlayer insulating film which is flattened to cover a wiring layer of a semiconductor integrated circuit device, in which a film-forming gas is activated by converting the film-forming gas into a plasma, the film-forming gas being composed of either a mixed gas containing a phosphorus-containing compound containing trivalent phosphorus, which takes a Si—O—P structure, and a silicon-containing compound containing at most one oxygen atom or an additional mixed gas prepared by adding an oxidative gas to said mixed gas; and a silicon-containing insulating film containing P2O5 is formed on a substrate.
摘要翻译：公开了一种层间绝缘膜的成膜方法，该层间绝缘膜被平坦化以覆盖半导体集成电路器件的布线层，其中成膜气体通过将成膜气体转化成等离子体来激活成膜气体，成膜气体由含有含有三价磷的含磷化合物的混合气体构成，其具有Si-OP结构，以及含有至多一个氧原子的含硅化合物或通过将氧化性气体加成而制备的附加混合气体说混合气并且在基板上形成含有P 2 O 5的含硅绝缘膜。

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