专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07226856B1 Nano-electrode-array for integrated circuit interconnects 有权
标题翻译：用于集成电路互连的纳米电极阵列
公开(公告)号：US07226856B1
公开(公告)日：2007-06-05
申请号：US10990273
申请日：2004-11-15
申请人： Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
发明人： Sergey D. Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Z. Kong , Artur Kolics
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit and a method of manufacturing an integrated circuit is provided including providing an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is formed over the dielectric layer in the trench and via, and a conductor is deposited over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译：提供一种集成电路和集成电路的制造方法，包括提供具有在电介质层中设置的沟槽和通孔的集成电路。纳米电极阵列形成在沟槽和通孔中的电介质层之上，导体沉积在纳米电极阵列上。导体和纳米电极阵列与电介质层的表面共面。

2. 发明申请

US20070284746A1 NANO-ELECTRODE-ARRAY FOR INTEGRATED CIRCUIT INTERCONNECTS 审中-公开
标题翻译：用于集成电路互连的纳米电极阵列
公开(公告)号：US20070284746A1
公开(公告)日：2007-12-13
申请号：US11742328
申请日：2007-04-30
申请人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
发明人： Sergey Lopatin , Robert Fiordalice , Faivel Pintchovski , Igor Ivanov , Wen Kong , Artur Kolics
IPC分类号： H01L21/82
CPC分类号： H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76868 , H01L21/76874 , Y10S977/723
摘要： An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
摘要翻译：提供一种集成电路，其包括具有在电介质层中设置的沟槽和通孔的集成电路。纳米电极阵列位于沟槽和通孔中的电介质层的上方，导体在纳米电极阵列的上方。导体和纳米电极阵列与电介质层的表面共面。

3. 发明申请

US20050212138A1 Barrier enhancement 有权
公开(公告)号：US20050212138A1
公开(公告)日：2005-09-29
申请号：US11137166
申请日：2005-05-25
申请人： Robert Fiordalice , Faivel Pintchovski
发明人： Robert Fiordalice , Faivel Pintchovski
IPC分类号： H01L21/302 , H01L21/461 , H01L21/4763 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76843 , H01L21/76862 , H01L21/76865
摘要： A method of forming an electrically conductive via. A first electrically conductive layer is formed, and a second layer is formed on the first layer. The second layer has desired barrier layer properties. A third non electrically conductive layer is formed on the second layer. A via hole is etched through the third layer, thereby exposing a portion of the second layer at the bottom of the via hole. The exposed portion of the second layer at the bottom of the via hole is redistributed so that at least a portion of the second layer is removed from the bottom of the via hole and deposited on lower portions of the sidewalls of the via hole. A fourth electrically conductive layer is formed within the via hole to form the electrically conductive via.

4. 发明授权

US5358615A Process for forming a sputter deposited metal film 失效
标题翻译：用于形成溅射沉积金属膜的方法
公开(公告)号：US5358615A
公开(公告)日：1994-10-25
申请号：US140341
申请日：1993-10-04
申请人： Leroy Grant , Robert Fiordalice , Iraj E. Shahvandi
发明人： Leroy Grant , Robert Fiordalice , Iraj E. Shahvandi
IPC分类号： C23C14/34 , C23C14/56
CPC分类号： H01J37/32862 , C23C14/3414 , C23C14/564
摘要： A metal deposition process in which a high-purity metal film (46) is sputter deposited within a sputtering system (10) having insitu passivated metal components. A sputtering target (14) is provided having a thin aluminum coating (44) overlying a refractory metal layer (42). During operation, the aluminum coating (44) is sputtered away from the target (14) and onto exposed metal surfaces within the vacuum chamber (20) of the sputter deposition system (10). Subsequently, a semiconductor substrate (38) is placed in the sputter deposition system (10) and a high-purity metal film (46) is deposited onto the semiconductor substrate (38). Because the insitu passivation process avoid the oxidation of the passivating aluminum, refractory metal sputtered away from the target (14) adheres to the passivating aluminum layer, and does not re-deposit onto the surface of the semiconductor substrate (38) during the sputter deposition process.
摘要翻译：金属沉积工艺，其中在具有钝化金属组分的溅射系统（10）内溅射沉积高纯度金属膜（46）。提供溅射靶（14），其具有覆盖难熔金属层（42）的薄铝涂层（44）。在操作期间，将铝涂层（44）从靶（14）溅射到溅射沉积系统（10）的真空室（20）内的暴露的金属表面上。随后，将半导体衬底（38）放置在溅射沉积系统（10）中，并将高纯度金属膜（46）沉积到半导体衬底（38）上。由于本征钝化过程避免了钝化铝的氧化，溅射远离目标（14）的难熔金属粘附到钝化铝层上，并且在溅射沉积期间不再沉积到半导体衬底（38）的表面上处理。

5. 发明申请

US20050018181A1 Defect detection system 审中-公开
标题翻译：缺陷检测系统
公开(公告)号：US20050018181A1
公开(公告)日：2005-01-27
申请号：US10919600
申请日：2004-08-16
申请人： Mehdi Vaez-Iravani , Jeffrey Rzepiela , Carl Treadwell , Andrew Zeng , Robert Fiordalice
发明人： Mehdi Vaez-Iravani , Jeffrey Rzepiela , Carl Treadwell , Andrew Zeng , Robert Fiordalice
IPC分类号： G01N21/21 , G01N21/95 , G01N21/00
CPC分类号： G01N21/956 , G01N21/21 , G01N21/9501
摘要： Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so- that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.
摘要翻译：来自样品表面的散射辐射通过收集器收集，收集器围绕垂直于表面的线基本上对称地收集辐射。收集的辐射被引导到不同方位角的通道，以便保持与线周围收集的散射辐射的相对方位位置有关的信息。所收集的辐射被转换成代表围绕线路以不同方位角散射的辐射的各个信号。异常的存在和/或特征由信号确定。或者，由集电器收集的辐射可以通过具有与预期图案散射的角度间隔相关的角度的环形间隙的空间滤光器来过滤。可以比较从狭窄和宽收集通道获得的信号，以区分微划痕和微粒。可以从其他辐射收集向前散射的辐射，并进行比较以区分微划痕和微粒。当通过S和P偏振辐射依次照射表面时，测量散射强度并进行比较以区分微划痕和微粒。可以使用轮廓仪或扫描探针显微镜来测量代表性膜以确定其粗糙度，并且可以通过上述仪器来确定雾度以构建数据库。然后可以通过测量雾度值和数据库来确定未知膜的表面粗糙度。

6. 发明授权

US06538730B2 Defect detection system 有权
公开(公告)号：US06538730B2
公开(公告)日：2003-03-25
申请号：US09828269
申请日：2001-04-06
申请人： Mehdi Vaez-Iravani , Jeffrey Alan Rzepiela , Carl Treadwell , Andrew Zeng , Robert Fiordalice
发明人： Mehdi Vaez-Iravani , Jeffrey Alan Rzepiela , Carl Treadwell , Andrew Zeng , Robert Fiordalice
IPC分类号： G01N2100
CPC分类号： G01N21/956 , G01N21/21 , G01N21/9501
摘要： Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.

7. 发明授权

US5801098A Method of decreasing resistivity in an electrically conductive layer 失效
标题翻译：降低导电层电阻率的方法
公开(公告)号：US5801098A
公开(公告)日：1998-09-01
申请号：US708245
申请日：1996-09-03
申请人： Robert Fiordalice , Sam Garcia , T. P. Ong
发明人： Robert Fiordalice , Sam Garcia , T. P. Ong
IPC分类号： H01L21/768 , H01L21/441
CPC分类号： H01L21/76838
摘要： A method of decreasing resistivity in an electrically conductive layer (23) includes providing a substrate (14), using a high density plasma sputtering technique to deposit the electrically conductive layer (23) over the substrate (14), and exposing the electrically conductive layer (23) to an anneal in an ambient comprised of a plasma (21).
摘要翻译：一种降低导电层（23）中的电阻率的方法包括：使用高密度等离子体溅射技术提供衬底（14），以将导电层（23）沉积在衬底（14）上，以及使导电层（23）在由等离子体（21）组成的环境中进行退火。

8. 发明授权

US06862096B2 Defect detection system 有权
标题翻译：缺陷检测系统
公开(公告)号：US06862096B2
公开(公告)日：2005-03-01
申请号：US10360565
申请日：2003-02-06
申请人： Mehdi Vaez-Iravani , Jeffrey Alan Rzepiela , Carl Treadwell , Andrew Zeng , Robert Fiordalice
发明人： Mehdi Vaez-Iravani , Jeffrey Alan Rzepiela , Carl Treadwell , Andrew Zeng , Robert Fiordalice
IPC分类号： G01N21/21 , G01N21/95 , G01B11/30
CPC分类号： G01N21/956 , G01N21/21 , G01N21/9501
摘要： Scattered radiation from a sample surface is collected by means of a collector that collects radiation substantially symmetrically about a line normal to the surface. The collected radiation is directed to channels at different azimuthal angles so that information related to relative azimuthal positions of the collected scattered radiation about the line is preserved. The collected radiation is converted into respective signals representative of radiation scattered at different azimuthal angles about the line. The presence and/or characteristics of anomalies are determined from the signals. Alternatively, the radiation collected by the collector may be filtered by means of a spatial filter having an annular gap of an angle related to the angular separation of expected pattern scattering. Signals obtained from the narrow and wide collection channels may be compared to distinguish between micro-scratches and particles. Forward scattered radiation may be collected from other radiation and compared to distinguish between micro-scratches and particles. Intensity of scattering is measured when the surface is illuminated sequentially by S- and P-polarized radiation and compared to distinguish between micro-scratches and particles. Representative films may be measured using profilometers or scanning probe microscopes to determine their roughness and by the above-described instruments to determine haze in order to build a database. Surface roughness of unknown films may then be determined by measuring haze values and from the database.
摘要翻译：来自样品表面的散射辐射通过收集器收集，收集器围绕垂直于表面的线基本上对称地收集辐射。收集的辐射被引导到不同方位角的通道，从而保持与线周围收集的散射辐射的相对方位位置有关的信息。所收集的辐射被转换成代表围绕线路以不同方位角散射的辐射的相应信号。异常的存在和/或特征由信号确定。或者，由集电器收集的辐射可以通过具有与预期图案散射的角度间隔相关的角度的环形间隙的空间滤光器来过滤。可以比较从狭窄和宽收集通道获得的信号，以区分微划痕和微粒。可以从其他辐射收集向前散射的辐射，并进行比较以区分微划痕和微粒。当通过S和P偏振辐射依次照射表面时，测量散射强度并进行比较以区分微划痕和微粒。可以使用轮廓仪或扫描探针显微镜来测量代表性膜以确定其粗糙度，并且可以通过上述仪器来确定雾度以构建数据库。然后可以通过测量雾度值和数据库来确定未知膜的表面粗糙度。

9. 发明授权

US6077768A Process for fabricating a multilevel interconnect 失效
标题翻译：制造多层互连的工艺
公开(公告)号：US6077768A
公开(公告)日：2000-06-20
申请号：US749316
申请日：1996-11-14
申请人： T. P. Ong , Robert Fiordalice , Ramnath Venkatraman
发明人： T. P. Ong , Robert Fiordalice , Ramnath Venkatraman
IPC分类号： H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号： H01L21/76877 , H01L21/76879 , H01L23/5226 , H01L2924/0002
摘要： A process for fabrication of a multilevel interconnect structure includes the formation of an inlaid interconnect (42) overlying an aluminum layer (34). The inlaid interconnect (42) is formed within an interlevel dielectric layer that is processed to contain an interconnect channel (24) and a via opening (14) residing at the bottom of the interconnect channel (24). The aluminum layer (34) is selectively deposited to fill the via opening (14) at the bottom of an interconnect channel (24). Selective deposition is enhanced by the use of a nucleation layer (20) which is formed on the bottom of the via opening, without being formed on the sidewalls, by use of directional deposition technique such as inductively coupled plasma (ICP) deposition. Nucleation layer (20) eases requirements of a cleaning operation prior to selective deposition and provides a surface from which void-free selective growth can occur.
摘要翻译：制造多层互连结构的工艺包括形成覆盖铝层（34）的镶嵌互连（42）。嵌入式互连（42）形成在层间介质层内，该层间介质层被处理成包含位于互连通道（24）的底部的互连通道（24）和通孔开口（14）。选择性地沉积铝层（34）以填充互连通道（24）的底部处的通孔（14）。通过使用形成在通孔开口底部而不形成在侧壁上的成核层（20），通过使用诸如感应耦合等离子体（ICP）沉积的定向沉积技术来增强选择性沉积。成核层（20）在选择性沉积之前降低了清洁操作的要求，并且提供了可以从其出现空隙的选择性生长的表面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式