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1. 发明授权

US5358615A Process for forming a sputter deposited metal film 失效
标题翻译：用于形成溅射沉积金属膜的方法
公开(公告)号：US5358615A
公开(公告)日：1994-10-25
申请号：US140341
申请日：1993-10-04
申请人： Leroy Grant , Robert Fiordalice , Iraj E. Shahvandi
发明人： Leroy Grant , Robert Fiordalice , Iraj E. Shahvandi
IPC分类号： C23C14/34 , C23C14/56
CPC分类号： H01J37/32862 , C23C14/3414 , C23C14/564
摘要： A metal deposition process in which a high-purity metal film (46) is sputter deposited within a sputtering system (10) having insitu passivated metal components. A sputtering target (14) is provided having a thin aluminum coating (44) overlying a refractory metal layer (42). During operation, the aluminum coating (44) is sputtered away from the target (14) and onto exposed metal surfaces within the vacuum chamber (20) of the sputter deposition system (10). Subsequently, a semiconductor substrate (38) is placed in the sputter deposition system (10) and a high-purity metal film (46) is deposited onto the semiconductor substrate (38). Because the insitu passivation process avoid the oxidation of the passivating aluminum, refractory metal sputtered away from the target (14) adheres to the passivating aluminum layer, and does not re-deposit onto the surface of the semiconductor substrate (38) during the sputter deposition process.
摘要翻译：金属沉积工艺，其中在具有钝化金属组分的溅射系统（10）内溅射沉积高纯度金属膜（46）。提供溅射靶（14），其具有覆盖难熔金属层（42）的薄铝涂层（44）。在操作期间，将铝涂层（44）从靶（14）溅射到溅射沉积系统（10）的真空室（20）内的暴露的金属表面上。随后，将半导体衬底（38）放置在溅射沉积系统（10）中，并将高纯度金属膜（46）沉积到半导体衬底（38）上。由于本征钝化过程避免了钝化铝的氧化，溅射远离目标（14）的难熔金属粘附到钝化铝层上，并且在溅射沉积期间不再沉积到半导体衬底（38）的表面上处理。

2. 发明授权

US06217660B1 Method for cleaning a throttle valve and apparatus 有权
标题翻译：清洗节气门和装置的方法
公开(公告)号：US06217660B1
公开(公告)日：2001-04-17
申请号：US09541645
申请日：2000-04-03
申请人： Iraj Shahvandi , Leroy Grant , Oliver Vatel
发明人： Iraj Shahvandi , Leroy Grant , Oliver Vatel
IPC分类号： C23C1600
CPC分类号： C23C16/4412 , C23C16/4407 , Y10T137/4273
摘要： An improved method of cleaning a throttle valve and an apparatus for facilitating such cleaning. The method of cleaning a throttle valve is provided by applying ultrasonic wave to the throttle valve. The throttle valve is juxtaposed in close proximity to the exhaust gas port of the reaction chamber. A cleaning gas of nitrogen is used to clean the throttle valve. The throttle valve is heated by an imbedded control heater.
摘要翻译：一种改进的节流阀清洗方法和便于清洗的装置。通过向节流阀施加超声波来提供清洗节气门的方法。节流阀与反应室的排气口紧密并置。使用氮气清洁气体来清洁节流阀。节流阀由嵌入式控制加热器加热。

3. 发明授权

US06390755B1 Exhaust device for use in a clean room, cleanroom, and method 失效
标题翻译：用于洁净室，洁净室和方法的排气装置
公开(公告)号：US06390755B1
公开(公告)日：2002-05-21
申请号：US09544097
申请日：2000-04-06
申请人： Leroy Grant , Gunter Hraschan
发明人： Leroy Grant , Gunter Hraschan
IPC分类号： B65G1133
CPC分类号： H01L21/67017
摘要： In a single cleanroom (200) for first (230) and second (240) wafer processing machines, an exhaust device (260) surrounds the second machine (240) that temporarily produces exhaust gas (250) which is detrimental to the processes in the first machine (230). Additionally to a first directed air flow (220) available in the cleanroom (200), the exhaust device (260) generates—in the proximity of gas leakage openings of the second machine (240)—a second air flow (270) that prevents the exhaust gas (250) from further being moved by the first air flow (220) to the first machine (230).
摘要翻译：在用于第一（230）和第二（240））晶片处理机的单个洁净室（200）中，排气装置（260）围绕暂时产生排气（250）的第二机器（240），这对于第一机器（230）。除了在洁净室（200）中可用的第一定向空气流（220）之外，排气装置（260）在第二机器（240）的气体泄漏口附近产生 - 第二气流（270），其防止废气（250）进一步被第一气流（220）移动到第一机器（230）。

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