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1. 发明申请

US20090050923A1 LIGHT EMITTING DIODE PACKAGE 有权
标题翻译：发光二极管封装
公开(公告)号：US20090050923A1
公开(公告)日：2009-02-26
申请号：US12192175
申请日：2008-08-15
申请人： Seong Ah Joo , Jung Kyu Park , Kun Yoo Ko , Young June Jeong , Seung Hwan Choi
发明人： Seong Ah Joo , Jung Kyu Park , Kun Yoo Ko , Young June Jeong , Seung Hwan Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L2224/48091 , H01L2924/01322 , H05K1/09 , H05K3/24 , H05K2201/10106 , H01L2924/00014
摘要： Provided is an LED package including a printed circuit board (PCB); a conductive structure that is formed on the PCB and is composed of any one selected from a silicon structure and an aluminum structure; and an LED chip that is mounted on the PCB and is electrically connected to the PCB through the conductive structure.
摘要翻译：提供了一种包括印刷电路板（PCB）的LED封装; 导电结构，其形成在PCB上并且由选自硅结构和铝结构中的任何一种构成; 以及安装在PCB上并通过导电结构电连接到PCB的LED芯片。

2. 发明授权

US08168997B2 Light emitting diode package 有权
标题翻译：发光二极管封装
公开(公告)号：US08168997B2
公开(公告)日：2012-05-01
申请号：US12192175
申请日：2008-08-15
申请人： Seong Ah Joo , Jung Kyu Park , Kun Yoo Ko , Young June Jeong , Seung Hwan Choi
发明人： Seong Ah Joo , Jung Kyu Park , Kun Yoo Ko , Young June Jeong , Seung Hwan Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L2224/48091 , H01L2924/01322 , H05K1/09 , H05K3/24 , H05K2201/10106 , H01L2924/00014
摘要： Provided is an LED package including a printed circuit board (PCB); a conductive structure that is formed on the PCB and is composed of any one selected from a silicon structure and an aluminum structure; and an LED chip that is mounted on the PCB and is electrically connected to the PCB through the conductive structure.
摘要翻译：提供了一种包括印刷电路板（PCB）的LED封装; 导电结构，其形成在PCB上并且由选自硅结构和铝结构中的任何一种构成; 以及安装在PCB上并通过导电结构电连接到PCB的LED芯片。

3. 发明申请

US20090085052A1 GAN TYPE LIGHT EMITTING DIODE DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译： GAN型发光二极管装置及其制造方法
公开(公告)号：US20090085052A1
公开(公告)日：2009-04-02
申请号：US12207615
申请日：2008-09-10
申请人： Kun Yoo Ko , Young June Jeong , Seung Hwan Choi , Seong Ah Joo , Jung Kyu Park
发明人： Kun Yoo Ko , Young June Jeong , Seung Hwan Choi , Seong Ah Joo , Jung Kyu Park
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/32 , H01L33/486 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16
摘要： The present invention relates to a GaN type LED device and a method of manufacturing the same. More particularly, there are provided a GaN type LED device including an LED chip; and a submount eutectic-bonded with the LED chip through an adhesive layer, wherein the adhesive layer is configured by soldering a plurality of metallic layers in which a first metallic layer and a second metallic layer are sequentially stacked, and the second metallic layer is formed in a paste form.Further, the present invention provides a method of manufacturing the GaN type LED device.
摘要翻译：本发明涉及GaN型LED器件及其制造方法。更具体地，提供了包括LED芯片的GaN型LED器件; 以及通过粘合剂层与LED芯片共晶结合的底座，其中，所述粘合层通过焊接多个金属层构成，其中第一金属层和第二金属层依次层叠，并且形成所述第二金属层以糊状形式。此外，本发明提供一种制造GaN型LED器件的方法。

4. 发明授权

US08602626B2 LED light source module and display apparatus including the same 有权
标题翻译： LED光源模块和包括其的显示装置
公开(公告)号：US08602626B2
公开(公告)日：2013-12-10
申请号：US13328564
申请日：2011-12-16
申请人： Won Joon Lee , Kun Yoo Ko , Jin Mo Kim , Seung Hwan Choi
发明人： Won Joon Lee , Kun Yoo Ko , Jin Mo Kim , Seung Hwan Choi
IPC分类号： F21V8/00
CPC分类号： G02B6/0073 , G02B6/0068 , G02B6/0083
摘要： An LED light source module is provided. The LED light source module includes a circuit board having a first circuit pattern and a second circuit pattern; and a plurality of rectangular LED packages mounted on the circuit board so as to be connected to each of the first and second circuit patterns, and arranged in a row such that each of the LED packages is tilted in a predetermined direction, while long sides of adjacent LED packages facing each other. In addition, a display device having the LED light source module is provided.
摘要翻译：提供LED光源模块。 LED光源模块包括具有第一电路图案和第二电路图案的电路板; 以及安装在所述电路板上的多个矩形LED封装件，以连接到所述第一和第二电路图案中的每一个，并且被布置成使得每个所述LED封装件沿预定方向倾斜，相邻的LED封装彼此面对。另外，提供具有LED光源模块的显示装置。

5. 发明申请

US20090166664A1 HIGH POWER LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：大功率发光二极管封装及其制造方法
公开(公告)号：US20090166664A1
公开(公告)日：2009-07-02
申请号：US12327552
申请日：2008-12-03
申请人： Jung Kyu Park , Kun Yoo Ko , Young Sam Park , Seung Hwan Chol , Il Ku Kim
发明人： Jung Kyu Park , Kun Yoo Ko , Young Sam Park , Seung Hwan Chol , Il Ku Kim
IPC分类号： H01L33/00 , H01L21/24
CPC分类号： H01L33/486 , H01L24/97 , H01L33/44 , H01L33/62 , H01L33/641 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/12036 , H01L2924/12041 , H01L2924/181 , H01L2224/48091 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： There is provided a high power LED package and a method of manufacturing the same. The method includes: forming at least one chip mounting part and at least one through hole in a metal plate; forming an insulating layer of a predetermined thickness on an entire outer surface of the metal plate; forming an electrode part to be electrically connected to a light emitting chip mounted on the chip mounting part; and cutting the metal plate along a trimming line to separate the package. The LED package is free from thermal impact resulting from different thermal coefficients among components, thus ensuring stable heat radiation characteristics in a high temperature atmosphere. Also, the LED package is minimized in optical loss to improve optical characteristics. In addition, the LED package is simplified in a manufacturing and assembly process and thus can be manufactured in mass production at a lower cost.
摘要翻译：提供了一种大功率LED封装及其制造方法。该方法包括：在金属板中形成至少一个芯片安装部分和至少一个通孔; 在金属板的整个外表面上形成预定厚度的绝缘层; 形成电连接到安装在芯片安装部上的发光芯片的电极部; 并沿着修剪线切割金属板以分离包装。 LED封装不受组件之间不同热系数的热冲击，从而确保高温环境中的稳定的散热特性。此外，LED封装在光损耗方面被最小化以改善光学特性。此外，LED封装在制造和组装过程中被简化，因此可以以较低的成本批量生产。

6. 发明授权

US07087985B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07087985B2
公开(公告)日：2006-08-08
申请号：US10853236
申请日：2004-05-26
申请人： Young Ho Park , Hyo Kyoung Cho , Seung Jin Yoo , Kun Yoo Ko
发明人： Young Ho Park , Hyo Kyoung Cho , Seung Jin Yoo , Kun Yoo Ko
IPC分类号： H01L23/495
CPC分类号： H01L33/382 , H01L24/45 , H01L2224/45 , H01L2924/00011 , H01L2924/00014 , H01L2924/01015 , H01L2924/12041 , H01L2924/00 , H01L2224/48 , H01L2224/45099 , H01L2224/43 , H01L2924/01006
摘要： In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.
摘要翻译：在具有发光结构的氮化物半导体LED中，n掺杂半导体层具有围绕第一区域的第一区域和第二区域，在n掺杂半导体层的第二区域上形成有源层，p 在有源层上形成掺杂氮化物半导体层。在p掺杂半导体层上形成p电极。在n掺杂氮化物半导体层的第一区域上形成n电极。

7. 发明授权

US07777245B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07777245B2
公开(公告)日：2010-08-17
申请号：US11499727
申请日：2006-08-07
申请人： Seok Min Hwang , Hyun Kyung Kim , Kun Yoo Ko , Sang Su Hong , Kyu Han Lee , Bok Ki Min
发明人： Seok Min Hwang , Hyun Kyung Kim , Kun Yoo Ko , Sang Su Hong , Kyu Han Lee , Bok Ki Min
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
摘要翻译：本发明涉及高输出氮化物发光器件。发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

8. 发明授权

US07297988B2 Flip chip type nitride semiconductor light emitting device 有权
标题翻译：倒装芯片型氮化物半导体发光器件
公开(公告)号：US07297988B2
公开(公告)日：2007-11-20
申请号：US11319343
申请日：2005-12-28
申请人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
发明人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
摘要翻译：本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

9. 发明授权

US07160744B2 Fabrication method of light emitting diode incorporating substrate surface treatment by laser and light emitting diode fabricated thereby 有权
标题翻译：掺合了由其制造的激光和发光二极管的基板表面处理的发光二极管的制造方法
公开(公告)号：US07160744B2
公开(公告)日：2007-01-09
申请号：US10953815
申请日：2004-09-30
申请人： Young Ho Park , Hun Joo Hahm , Kun Yoo Ko , Hyo Kyong Cho
发明人： Young Ho Park , Hun Joo Hahm , Kun Yoo Ko , Hyo Kyong Cho
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L21/02378 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L33/007 , Y10S438/964
摘要： The present invention relates to a fabrication method of LEDs incorporating a step of surface-treating a substrate by a laser and an LED fabricated by such a fabrication method. The present invention can use a laser in order to implement finer surface treatment to an LED substrate over the prior art. As a result, the invention can improve the light extraction efficiency of an LED while protecting the substrate from chronic problems of the prior art such as stress or defects induced from chemical etching and/or physical polishing.
摘要翻译：本发明涉及一种LED的制造方法，其包括通过激光对基板进行表面处理的步骤以及通过这种制造方法制造的LED。与现有技术相比，本发明可以使用激光器来实现对LED基板的更精细的表面处理。结果，本发明可以提高LED的光提取效率，同时保护衬底免受现有技术的慢性问题，例如由化学蚀刻和/或物理抛光引起的应力或缺陷。

10. 发明授权

US08168995B2 Nitride based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08168995B2
公开(公告)日：2012-05-01
申请号：US11543231
申请日：2006-10-05
申请人： Kun Yoo Ko , Seok Min Hwang , Hyung Jin Park
发明人： Kun Yoo Ko , Seok Min Hwang , Hyung Jin Park
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L2224/05552
摘要： A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.
摘要翻译：提供了一种基于氮化物的半导体LED。在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分为具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。在n型氮化物半导体层的第二区域上形成有源层。在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。

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