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1. 发明授权

US07709845B2 Semiconductor light emitting device with improved current spreading structure 失效
标题翻译：具有改善的电流扩展结构的半导体发光器件
公开(公告)号：US07709845B2
公开(公告)日：2010-05-04
申请号：US11588330
申请日：2006-10-27
申请人： Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
发明人： Kun Yoo Ko , Young Ho Park , Bok Ki Min , Hyung Jin Park , Seok Min Hwang
IPC分类号： H01L27/15
CPC分类号： H01L33/20 , H01L33/14 , H01L33/32
摘要： The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.
摘要翻译：本发明涉及抑制电流浓度的高质量半导体发光器件。半导体发光器件包括依次形成在衬底上的n型半导体层，有源层和p型半导体层。半导体发光器件还包括形成在p型半导体层上的p电极和形成在n型半导体层的台面蚀刻部分的表面上的n电极。在n型半导体层中形成沟槽以防止电流集中。沟槽从n型半导体层的台面蚀刻部分的上表面或从基板的底表面延伸到预定深度的n型半导体层。

2. 发明授权

US08168995B2 Nitride based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08168995B2
公开(公告)日：2012-05-01
申请号：US11543231
申请日：2006-10-05
申请人： Kun Yoo Ko , Seok Min Hwang , Hyung Jin Park
发明人： Kun Yoo Ko , Seok Min Hwang , Hyung Jin Park
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L2224/05552
摘要： A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.
摘要翻译：提供了一种基于氮化物的半导体LED。在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分为具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。在n型氮化物半导体层的第二区域上形成有源层。在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。

3. 发明授权

US08110847B2 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08110847B2
公开(公告)日：2012-02-07
申请号：US12003276
申请日：2007-12-21
申请人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
发明人： Kun Yoo Ko , Je Won Kim , Dong Woo Kim , Hyung Jin Park , Seok Min Hwang , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/42
摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.
摘要翻译：提供一种包含基板的氮化物系半导体LED，形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

4. 发明授权

US07531841B2 Nitride-based semiconductor light emitting device 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US07531841B2
公开(公告)日：2009-05-12
申请号：US11651023
申请日：2007-01-09
申请人： Kun Yoo Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
发明人： Kun Yoo Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
IPC分类号： H01L27/15
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

5. 发明申请

US20070228388A1 Nitride-based semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20070228388A1
公开(公告)日：2007-10-04
申请号：US11651023
申请日：2007-01-09
申请人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
发明人： Kun Yon Ko , Bang Won Oh , Hun Joo Hahm , Je Won Kim , Hyung Jin Park , Seok Min Hwang , Dong Woo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.
摘要翻译：氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

6. 发明授权

US07713793B2 Fuse of semiconductor device and method for manufacturing the same 有权
标题翻译：半导体器件的熔断器及其制造方法
公开(公告)号：US07713793B2
公开(公告)日：2010-05-11
申请号：US12117423
申请日：2008-05-08
申请人： Hyung Jin Park , Won Ho Shin
发明人： Hyung Jin Park , Won Ho Shin
IPC分类号： H01L21/82
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a fuse of a semiconductor device comprises forming an island-type metal fuse in a region where a laser is irradiated, so that laser energy may not be dispersed in a fuse blowing process, thereby improving repair efficiency.
摘要翻译：一种制造半导体器件的熔丝的方法包括在激光照射的区域中形成岛状金属熔丝，使得激光能量不会分散在保险丝熔化过程中，从而提高修复效率。

7. 发明授权

US08373201B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08373201B2
公开(公告)日：2013-02-12
申请号：US13075063
申请日：2011-03-29
申请人： Hyung Jin Park
发明人： Hyung Jin Park
IPC分类号： H01L23/52
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a fuse pattern formed as conductive polymer layer having a low melting point. The fuse pattern is easily cut at low temperature to improve repair efficiency. The semiconductor device includes first and second fuse connecting patterns that are separated from each other by a distance, a fuse pattern including a conductive polymer layer formed between the first and second fuse connection patterns and connecting the first and second fuse connection patterns, and a fuse box structure that exposes the fuse pattern. The conductive polymer layer includes a nano-sized metal powder and a polymer.
摘要翻译：半导体器件包括形成为具有低熔点的导电聚合物层的熔丝图案。保险丝图案在低温下易于切割，以提高维修效率。半导体器件包括彼此分开一定距离的第一和第二熔丝连接图案，包括形成在第一和第二熔丝连接图案之间并连接第一和第二熔丝连接图案的导电聚合物层的熔丝图案和熔丝盒结构暴露了熔丝图案。导电聚合物层包括纳米尺寸的金属粉末和聚合物。

8. 发明授权

US07915096B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07915096B2
公开(公告)日：2011-03-29
申请号：US12116643
申请日：2008-05-07
申请人： Hyung Jin Park
发明人： Hyung Jin Park
IPC分类号： H01L21/82 , H01L21/332
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a fuse pattern formed as conductive polymer layer having a low melting point. The fuse pattern is easily cut at low temperature to improve repair efficiency. The semiconductor device includes first and second fuse connecting patterns that are separated from each other by a distance, a fuse pattern including a conductive polymer layer formed between the first and second fuse connection patterns and connecting the first and second fuse connection patterns, and a fuse box structure that exposes the fuse pattern.
摘要翻译：半导体器件包括形成为具有低熔点的导电聚合物层的熔丝图案。保险丝图案在低温下易于切割，以提高维修效率。半导体器件包括彼此分开一定距离的第一和第二熔丝连接图案，包括形成在第一和第二熔丝连接图案之间并连接第一和第二熔丝连接图案的导电聚合物层的熔丝图案和熔丝盒结构暴露了熔丝图案。

9. 发明授权

US06845103B1 Apparatus and method for controlling initialization of a DMT system 失效
标题翻译：用于控制DMT系统初始化的装置和方法
公开(公告)号：US06845103B1
公开(公告)日：2005-01-18
申请号：US09563527
申请日：2000-05-03
申请人： Hyung Jin Park
发明人： Hyung Jin Park
IPC分类号： H04L12/66 , H04L27/26 , H04Q11/02
CPC分类号： H04L27/2626 , H04L27/2647 , H04L27/2655 , H04Q2213/13109 , H04Q2213/13176
摘要： An apparatus for controlling initialization of a discrete multi-tone (DMT) system is provided in which a connection between first and second devices is acknowledged by using a plurality of connection acknowledgment tone frequencies to thereby improve the reliability of the activation/acknowledgment procedure. The method includes transmitting a first connection acknowledgment tone signal at a predetermined frequency from the first device to the second device; detecting a first response tone signal transmitted from the second device; transmitting a second connection acknowledgment tone signal to the second device if the first response tone signal is not detected for a predetermined time; and detecting a second response tone signal inputted from the second device to thereby acknowledge a connection to the second device.
摘要翻译：提供一种用于控制离散多音（DMT）系统的初始化的装置，其中通过使用多个连接确认音频率来确认第一和第二设备之间的连接，从而提高激活/确认过程的可靠性。该方法包括以预定频率从第一设备向第二设备发送第一连接确认音信号; 检测从所述第二设备发送的第一响应音信号; 如果在预定时间内没有检测到第一响应音信号，则向第二设备发送第二连接确认音信号; 以及检测从所述第二设备输入的第二响应音信号，从而确认与所述第二设备的连接。

10. 发明授权

US08367499B2 Method for manufacturing semiconductor device with first and second gates over buried bit line 有权
标题翻译：用于在掩埋位线上制造具有第一和第二栅极的半导体器件的方法
公开(公告)号：US08367499B2
公开(公告)日：2013-02-05
申请号：US12969511
申请日：2010-12-15
申请人： Hyung Jin Park
发明人： Hyung Jin Park
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/66666 , H01L27/10855 , H01L27/10885 , H01L27/115 , H01L29/7827
摘要： A semiconductor device and a method for manufacturing the same are provided. The method includes forming a cell structure where a storage node contact is coupled to a silicon layer formed over a gate, thereby simplifying the manufacturing process of the device. The semiconductor device includes a bit line buried in a semiconductor substrate; a plurality of gates disposed over the semiconductor substrate buried with the bit line; a first plug disposed in a lower portion between the gates and coupled to the bit line; a silicon layer disposed on the upper portion and sidewalls of the gate; and a second plug coupled to the silicon layer disposed over the gate.
摘要翻译：提供半导体器件及其制造方法。该方法包括形成单元结构，其中存储节点接触耦合到形成在栅极上的硅层，从而简化了器件的制造过程。半导体器件包括埋在半导体衬底中的位线; 设置在所述半导体衬底上的与所述位线埋设的多个栅极; 第一插头，其设置在所述栅极之间的下部并且耦合到所述位线; 设置在所述栅极的上部和侧壁上的硅层; 以及耦合到设置在所述栅极上的所述硅层的第二插头。

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