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1. 发明授权

US07687355B2 Method for manufacturing fin transistor that prevents etching loss of a spin-on-glass insulation layer 失效
标题翻译：用于制造防止玻璃化玻璃绝缘层的蚀刻损失的鳍式晶体管的方法
公开(公告)号：US07687355B2
公开(公告)日：2010-03-30
申请号：US11965835
申请日：2007-12-28
申请人： Dong Sun Sheen , Seok Pyo Song , Young Ho Lee
发明人： Dong Sun Sheen , Seok Pyo Song , Young Ho Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/66795 , H01L29/7851
摘要： A method for manufacturing a fin transistor includes forming a trench by etching a semiconductor substrate. A flowable insulation layer is filled in the trench to form a field insulation layer defining an active region. The portion of the flowable insulation layer coming into contact with a gate forming region is etched so as to protrude the gate forming region in the active region. A protective layer over the semiconductor substrate is formed to fill the portion of the etched flowable insulation layer. The portion of the protective layer formed over the active region is removed to expose the active region of the semiconductor substrate. The exposed active region of the semiconductor substrate is cleaned. The protective layer remaining on the portion of the etched flowable insulation layer is removed. Gates are formed over the protruded gate forming regions in the active region.
摘要翻译：一种制造鳍式晶体管的方法包括：通过蚀刻半导体衬底形成沟槽。可流动的绝缘层填充在沟槽中以形成限定有源区的场绝缘层。与栅极形成区域接触的可流动绝缘层的部分被蚀刻以便在有源区域中突出栅极形成区域。形成半导体衬底上方的保护层以填充该可蚀刻的可流动绝缘层的部分。在有源区上形成的保护层的部分被去除以暴露半导体衬底的有源区。清洁半导体衬底的暴露的有源区。残留在可蚀刻的可流动绝缘层的部分上的保护层被去除。在活性区域中的突出的栅极形成区域上形成栅极。

2. 发明授权

US07687362B2 Semiconductor device with increased channel length and width and method for manufacturing the same 失效
标题翻译：具有增加的通道长度和宽度的半导体器件及其制造方法
公开(公告)号：US07687362B2
公开(公告)日：2010-03-30
申请号：US11941194
申请日：2007-11-16
申请人： Seok Pyo Song , Dong Sun Sheen , Young Ho Lee
发明人： Seok Pyo Song , Dong Sun Sheen , Young Ho Lee
IPC分类号： H01L29/78
CPC分类号： H01L29/66621 , H01L29/4236
摘要： A semiconductor device includes a semiconductor substrate having an active region including a channel portion. An isolation layer is formed in the semiconductor substrate to define the active region, and a gate is formed over the channel portion in the active region. The active region of the semiconductor substrate is etched to such that the entire active region is below an upper surface of the isolation layer. A U-shaped groove is formed in the channel portion of the active region, except the edges in a direction of the channel width thereof, in order to increase the channel width. In the semiconductor device, there is an increase in channel length and channel width leading to a reduction in leakage current and on increase in operation current.
摘要翻译：半导体器件包括具有包括沟道部分的有源区的半导体衬底。在半导体衬底中形成隔离层以限定有源区，并且在有源区中的沟道部分之上形成栅极。蚀刻半导体衬底的有源区，使得整个有源区在隔离层的上表面下方。为了增加通道宽度，在活性区域的通道部分中形成U形槽，除了其通道宽度方向上的边缘之外。在半导体器件中，通道长度和通道宽度增加，导致漏电流的减小和工作电流的增加。

3. 发明申请

US20110001576A1 POWER AMPLIFIER MODULE 审中-公开
标题翻译：功率放大器模块
公开(公告)号：US20110001576A1
公开(公告)日：2011-01-06
申请号：US12497601
申请日：2009-07-03
申请人： Young Ho Lee , Sun Young Lee , Young Kwon
发明人： Young Ho Lee , Sun Young Lee , Young Kwon
IPC分类号： H01P5/18
CPC分类号： H01P5/187
摘要： A power amplifier module comprises a power amplifier disposed in a coreless substrate and a directional coupler disposed in a coreless substrate and connected to the power amplifier.
摘要翻译：功率放大器模块包括设置在无芯基板中的功率放大器和布置在无芯基板中并连接到功率放大器的定向耦合器。

4. 发明申请

US20100128835A1 INTERMEDIATE END PLUG ASSEMBLY FOR SEGMENTED FUEL ROD AND SEGMENTED FUEL ROD HAVING THE SAME 有权
标题翻译：用于分离燃料的中间端部组件和具有相同功能的分离燃料
公开(公告)号：US20100128835A1
公开(公告)日：2010-05-27
申请号：US12420874
申请日：2009-04-09
申请人： Kyung Ho Yoon , Jae Yong Kim , Young Ho Lee , Kun Woo Song , Tae Hyun Chun , Dong Seok Oh , Wang Ki In , Hyung Kyu Kim , Chang Hwan Shin , Kang Hee Lee
发明人： Kyung Ho Yoon , Jae Yong Kim , Young Ho Lee , Kun Woo Song , Tae Hyun Chun , Dong Seok Oh , Wang Ki In , Hyung Kyu Kim , Chang Hwan Shin , Kang Hee Lee
IPC分类号： G21C3/30
CPC分类号： G21C3/322 , G21C3/33 , Y02E30/38
摘要： An intermediate end plug assembly for a segmented fuel rod can stably support the fuel rod to the end of its cycle even if an interval between the fuel rods becomes narrow due to application of a dual-cooled fuel rod, and reduce excess vibration induced by flows of interior and exterior channels of the dual-cooled fuel rod for obtaining high burnup and output. To this end, the fuel rod has a segmented structure so as to make its length short. A lower intermediate end plug includes at least one channel hole, through which a coolant flows into an internal channel of the fuel rod, so that a possibility of causing departure from nuclear boiling ratio (DNBR) of the dual-cooled fuel rod is reduced.
摘要翻译：用于分段燃料棒的中间端塞组件即使燃料棒之间的间隔由于施加双重冷却燃料棒而变窄，也可以稳定地将燃料棒支撑到其循环结束，并减少由流动引起的过量振动的双冷却燃料棒的内部和外部通道，以获得高燃耗和输出。为此，燃料棒具有分段结构以使其长度短。下部中间端塞包括至少一个通道孔，冷却剂通过该通道孔流入燃料棒的内部通道，从而降低了双重冷却燃料棒的核沸腾比（DNBR）的可能性。

5. 发明授权

US07525068B2 Heating system of batch type reaction chamber and method thereof 有权
标题翻译：分批式反应室加热系统及其方法
公开(公告)号：US07525068B2
公开(公告)日：2009-04-28
申请号：US11513732
申请日：2006-08-31
申请人： Taek Yong Jang , Byoung Il Lee , Young Ho Lee
发明人： Taek Yong Jang , Byoung Il Lee , Young Ho Lee
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D3/0084 , H01L21/67109 , H01L21/67115
摘要： A heating system of a batch type reaction chamber for semiconductor device and a method thereof are disclosed. Each heat unit of heating groups has different height and caloric value at right angles according to the divided areas, thereby it can control an uniform temperature incline of the entire process space of the reaction chamber. Also, the reflecting plates are formed by each heating unit, so that the change of the heating unit can be simple. Furthermore, the divided reflecting blocks are adjacently connected to another reflecting block through the radiant wave shielding slit between them, so that the leakage of the radiant wave can be prevented and the reflecting blocks can be separately attached and deattached to each other. Also, the turning member is formed at the lower portion of the reflecting blocks, so that it can be easily attached and deattached.
摘要翻译：公开了一种用于半导体器件的间歇式反应室的加热系统及其方法。加热组的每个加热单元根据分割区域具有不同的高度和直角热值，从而可以控制反应室整个工艺空间的均匀温度倾斜。此外，反射板由每个加热单元形成，使得加热单元的变化可以简单。此外，分割的反射块通过它们之间的辐射波屏蔽狭缝相邻地连接到另一个反射块，从而可以防止辐射波的泄漏，并且可以将反射块分开地附接和脱附。此外，转动构件形成在反射块的下部，使得其可以容易地附接和脱附。

6. 发明授权

US07281328B2 Method of fabricating rigid-flexible printed circuit board 有权
标题翻译：刚性柔性印刷电路板的制造方法
公开(公告)号：US07281328B2
公开(公告)日：2007-10-16
申请号：US11253973
申请日：2005-10-18
申请人： Yang Je Lee , Dek Gin Yang , Jung Wook Hwang , Kyu Hyok Yim , Jung Hun Chai , Young Ho Lee , Kwang Yune Kim , Dong Gi An
发明人： Yang Je Lee , Dek Gin Yang , Jung Wook Hwang , Kyu Hyok Yim , Jung Hun Chai , Young Ho Lee , Kwang Yune Kim , Dong Gi An
IPC分类号： H01K3/10
CPC分类号： H05K3/4691 , H05K3/28 , H05K3/4652 , H05K2201/09127 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165
摘要： The present invention is related to a method of fabricating a rigid-flexible printed circuit board. Specifically, this invention relates to a method of fabricating a rigid-flexible printed circuit board, in which an internal circuit pattern exposed for use in an external pad and a mounting pad is protected from external environments using a resist cover by window etching the base copper foil of a flexible region upon formation of an external circuit pattern as opposed to using a resist cover. Thus the number of fabrication processes and the fabrication costs are decreased and the increase in defect rates due to contamination is prevented, resulting in maximized reliability.
摘要翻译：本发明涉及制造刚挠柔性印刷电路板的方法。具体地说，本发明涉及一种刚性柔性印刷电路板的制造方法，其中使用外部焊盘和安装焊盘露出的内部电路图案通过窗口蚀刻基底铜而被保护免受外部环境的影响在形成外部电路图案时，与使用抗蚀剂盖相反，柔性区域的箔片。因此，制造工艺的数量和制造成本降低，并且防止了由于污染引起的缺陷率的增加，导致最大的可靠性。

7. 发明申请

US20070217023A1 Liquid lens 失效
标题翻译：液体镜片
公开(公告)号：US20070217023A1
公开(公告)日：2007-09-20
申请号：US11715371
申请日：2007-03-08
申请人： Sung Chan Kim , Ha Yong Jung , Jin Hyuck Yang , Young Ho Lee
发明人： Sung Chan Kim , Ha Yong Jung , Jin Hyuck Yang , Young Ho Lee
IPC分类号： G02B3/12
CPC分类号： G02B3/14 , G02B13/0045 , G02B13/006 , G02B13/0075 , G02B13/009 , G02B26/005
摘要： A liquid lens comprises a cylindrical body having a pair of glass lenses which are coupled to upper and lower openings of the body, respectively; an aspheric transmitting partition lens inserted and fixed in the central portion of the body; an auto-focus lens section composed of a first insulating liquid layer and a first electrolyte layer which are filled under the transmitting partition lens so as to form an interface therebetween; an optical zoom lens section composed of a second insulating liquid layer and a second electrolyte layer which are filled above the transmitting partition lens so as to form an interface therebetween; and a minute auto-focus lens section composed of a third insulating liquid layer of which the upper surface comes in contact with the lower surface of the transmitting partition lens and of which the lower surface forms an interface with the first electrolyte layer such that the third insulating liquid layer is not mixed with the first electrolyte layer.
摘要翻译：液体透镜包括具有一对玻璃透镜的圆柱体，所述玻璃透镜分别联接到主体的上部和下部开口; 插入并固定在主体的中心部分的非球面透射分隔透镜; 一个由第一绝缘液体层和第一电解质层构成的自动对焦透镜部分，其被填充在发射分隔透镜下面以形成它们之间的界面; 由第二绝缘液体层和第二电解质层组成的光学变焦透镜部分，其被填充在发射分隔透镜的上方以形成它们之间的界面; 以及由上表面与发射分隔透镜的下表面接触并且其下表面与第一电解质层形成界面的第三绝缘液体层组成的分钟自动对焦透镜部分，使得第三绝缘液体层绝缘液体层不与第一电解质层混合。

8. 发明申请

US20070166656A1 Heating system of batch type reaction chamber and method thereof 有权
标题翻译：分批式反应室加热系统及其方法
公开(公告)号：US20070166656A1
公开(公告)日：2007-07-19
申请号：US11513732
申请日：2006-08-31
申请人： Taek Yong Jang , Byoung Il Lee , Young Ho Lee
发明人： Taek Yong Jang , Byoung Il Lee , Young Ho Lee
IPC分类号： F27D1/00
CPC分类号： F27B17/0025 , F27B5/04 , F27D3/0084 , H01L21/67109 , H01L21/67115
摘要： A heating system of a batch type reaction chamber for semiconductor device and a method thereof are disclosed. Each heat unit of heating groups has different height and caloric value at right angles according to the divided areas, thereby it can control an uniform temperature incline of the entire process space of the reaction chamber. Also, the reflecting plates are formed by each heating unit, so that the change of the heating unit can be simple. Furthermore, the divided reflecting blocks are adjacently connected to another reflecting block through the radiant wave shielding slit between them, so that the leakage of the radiant wave can be prevented and the reflecting blocks can be separately attached and deattached to each other. Also, the turning member is formed at the lower portion of the reflecting blocks, so that it can be easily attached and deattached.
摘要翻译：公开了一种用于半导体器件的间歇式反应室的加热系统及其方法。加热组的每个加热单元根据分割区域具有不同的高度和直角热值，从而可以控制反应室整个工艺空间的均匀温度倾斜。此外，反射板由每个加热单元形成，使得加热单元的变化可以简单。此外，分割的反射块通过它们之间的辐射波屏蔽狭缝相邻地连接到另一个反射块，从而可以防止辐射波的泄漏，并且可以将反射块分开地附接和脱附。此外，转动构件形成在反射块的下部，使得其可以容易地附接和脱附。

9. 发明授权

US08890104B2 Resistive memory device and fabrication method thereof 有权
标题翻译：电阻式存储器件及其制造方法
公开(公告)号：US08890104B2
公开(公告)日：2014-11-18
申请号：US13598244
申请日：2012-08-29
申请人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
发明人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
IPC分类号： H01L29/02
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2481 , H01L29/6609 , H01L29/861 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit.
摘要翻译：提供了一种电阻式存储器件及其制造方法。电阻式存储器件包括形成在其上形成底部结构的半导体衬底上的可变电阻层，形成在可变电阻层上的下电极，形成在下电极上的开关单元和形成在开关单元上的上电极。

10. 发明申请

US20130228733A1 RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：电阻式存储器件及其制造方法
公开(公告)号：US20130228733A1
公开(公告)日：2013-09-05
申请号：US13598244
申请日：2012-08-29
申请人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
发明人： Min Yong Lee , Young Ho Lee , Seung Beom Baek , Jong Chul Lee
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/1608 , H01L27/2409 , H01L27/2481 , H01L29/6609 , H01L29/861 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/16
摘要： A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit.
摘要翻译：提供了一种电阻式存储器件及其制造方法。电阻式存储器件包括形成在其上形成底部结构的半导体衬底上的可变电阻层，形成在可变电阻层上的下电极，形成在下电极上的开关单元和形成在开关单元上的上电极。

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