专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20030095116A1 Reflective type semiconductor display device 有权
标题翻译：反射型半导体显示装置
公开(公告)号：US20030095116A1
公开(公告)日：2003-05-22
申请号：US10293579
申请日：2002-11-12
申请人： Semiconductor Energy Laboratory Co. Ltd., a Japanese corporation
发明人： Jun Koyama
IPC分类号： G09G005/00
CPC分类号： H01L29/66757 , G02F1/13454 , G02F1/136286 , G02F2001/136218 , H01L29/78621
摘要： A reflective type active matrix liquid crystal display device is provided which is capable of offering preferred images. The present invention provides a reflective type display device comprising an insulation substrate, a TFT array formed over the insulation substrate and having a plurality of pixel TFTs formed in a matrix form, at least one driver circuit formed over the substrate and having a plurality of driver TFTs to drive the TFT array, a reflective pixel electrode connected to the pixel TFTs and arranged above part or an entire of the driver circuit, and at least one power source interconnect connected to the driver circuit and formed between the reflective pixel electrode and one of a source electrode and a drain electrode of the driver TFTs. This power source interconnect serves to shield against electrical noise caused by the driver TFTs constituting the driver circuit.
摘要翻译：提供了能够提供优选图像的反射型有源矩阵液晶显示装置。本发明提供了一种反射型显示装置，包括绝缘衬底，形成在绝缘衬底上并具有以矩阵形式形成的多个像素TFT的TFT阵列，至少一个驱动电路，形成在衬底上并具有多个驱动器用于驱动TFT阵列的TFT，连接到像素TFT并且布置在驱动器电路的一部分或全部上方的反射像素电极，以及连接到驱动器电路并形成在反射像素电极之间的至少一个电源互连驱动TFT的源电极和漏电极。该电源互连用于屏蔽由构成驱动器电路的驱动器TFT引起的电噪声。

2. 发明申请

US20020100937A1 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20020100937A1
公开(公告)日：2002-08-01
申请号：US10024850
申请日：2001-12-19
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japanese corporation
发明人： Shunpei Yamazaki , Hisashi Ohtani , Jun Koyama , Takeshi Fukunaga
IPC分类号： H01L027/01 , H01L027/12 , H01L031/0392
CPC分类号： H01L29/78696 , H01L21/02532 , H01L21/02672 , H01L21/32055 , H01L21/321 , H01L21/3221 , H01L27/10873 , H01L27/12 , H01L27/1277 , H01L29/04 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance.

3. 发明申请

US20040065885A1 Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method 有权
标题翻译：半导体薄膜及其制造方法及半导体器件及其制造方法
公开(公告)号：US20040065885A1
公开(公告)日：2004-04-08
申请号：US10647539
申请日：2003-08-26
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japanese corporation
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Jun Koyama , Takeshi Fukunaga
IPC分类号： H01L029/04
CPC分类号： H01L27/0688 , G02F1/1362 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02675 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1112 , H01L27/1248 , H01L27/1277 , H01L29/04 , H01L29/66772 , H01L29/78654 , H01L31/076 , H01L31/1824 , H01L31/1872 , H01L2924/0002 , Y02E10/545 , Y02E10/548 , Y02P70/521 , Y10S257/903 , Y10S257/904 , H01L2924/00
摘要： A semiconductor thin film is formed having a lateral growth region which is a collection of columnar or needle-like crystals extending generally parallel with a substrate. The semiconductor thin film is illuminated with laser light or strong light having equivalent energy. As a result, adjacent columnar or needle-like crystals are joined together to form a region having substantially no grain boundaries, i.e., a monodomain region which can substantially be regarded as a single crystal. A semiconductor device is formed by using the monodomain region as an active layer.
摘要翻译：形成具有侧向生长区域的半导体薄膜，该横向生长区域是大体平行于基底延伸的柱状或针状晶体的集合。半导体薄膜用具有等效能量的激光或强光照射。结果，相邻的柱状或针状结晶结合在一起形成基本上不具有晶界的区域，即基本上被认为是单晶的单畴区域。通过使用单畴区域作为有源层形成半导体器件。

4. 发明申请

US20030117383A1 Active matrix display device and scanning circuit 失效
公开(公告)号：US20030117383A1
公开(公告)日：2003-06-26
申请号：US10198796
申请日：2002-07-17
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japanese corporation
发明人： Kenichi Katoh , Yasushi Kubota , Hidehiko Chimura , Jun Koyama
IPC分类号： G09G005/00
CPC分类号： G09G3/3677 , G09G2310/0283
摘要： An active matrix display device has a number of pixels arranged in matrix form, signal lines for supplying display signals to the pixels, and a driver circuit for driving the signal lines. The driver circuit includes a frequency divider circuit for frequency-dividing input multi-phase clock signals, a synchronous counter circuit for frequency-dividing part of the input multi-phase clock signals, and a decoder circuit for selecting a desired one of the signal lines based on outputs of the frequency divider circuit and the synchronous counter circuit.

5. 发明申请

US20020053672A1 Semiconductor thin film, semiconductor device and manufacturing method thereof 有权
标题翻译：半导体薄膜，半导体器件及其制造方法
公开(公告)号：US20020053672A1
公开(公告)日：2002-05-09
申请号：US09995549
申请日：2001-11-27
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japanese corporation
发明人： Shunpei Yamazaki , Jun Koyama , Akiharu Miyanaga , Takeshi Fukunaga
IPC分类号： H01L029/76 , H01L031/036 , H01L031/112 , H01L021/00 , H01L021/84
CPC分类号： H01L27/12 , G02F1/13454 , H01L21/02532 , H01L21/02672 , H01L27/10805 , H01L27/10873 , H01L27/11 , H01L27/1108 , H01L27/1203 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/66757
摘要： A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.
摘要翻译：半导体器件包括其表面上具有绝缘膜的衬底和在衬底表面上由半导体薄膜制成的交流有源层。薄膜包含由多个柱状和/或针状晶体形成的单畴区域，其平行于衬底表面而不包括其中的晶界，使活性层仅由单畴区组成。活性层下面的绝缘膜具有预期图案的特定表面构型，包括凸起或凹槽。为了制造有源层，通过在衬底上溅射形成氧化硅膜。形成提供表面构造的氧化硅膜。通过低压CVD在氧化硅膜上形成非晶硅膜。保留在氧化硅膜和/或非晶硅膜中的某些金属元素，用于将硅膜加速至晶体硅膜。然后，在形成在结晶硅膜上的卤素气氛中进行第二次热处理，含有卤素的热氧化膜，由此晶体硅膜改变为单畴区域。

6. 发明申请

US20020149711A1 Active matrix display device 失效
公开(公告)号：US20020149711A1
公开(公告)日：2002-10-17
申请号：US10170482
申请日：2002-06-12
申请人： Semiconductor Energy Laboratory Co., Ltd., a Japanese corporation
发明人： Shunpei Yamazaki , Jun Koyama , Yasuhiko Takemura
IPC分类号： G02F001/136
CPC分类号： H01L29/78696 , G02F1/136213 , G02F1/13624 , G02F1/1368 , G09G3/30 , G09G3/3648 , G09G2300/0809 , H01L29/78645
摘要： In an active matrix display device, a circuit including at least five thin film transistors (TFTs) which are provided with an approximately M-shaped semiconductor region for a single pixel electrode and gate lines and a capacitances line which cross the M-shaped semiconductor region, is used as a switching element. Each of the TFT have offset regions and lightly doped drain (LDD) regions. Then, by supplying a selection signal to the gate lines, the TFTs are operated, thereby writing data to the pixel, while a suitable voltage is supplied to the capacitance line, a channel is formed thereunder and it becomes a capacitor. Thus the amount of discharge from the pixel electrode is reduced by the capacitor.

7. 发明申请

US20020036294A1 Matrix type liquid-crystal display unit 失效
标题翻译：矩阵式液晶显示单元
公开(公告)号：US20020036294A1
公开(公告)日：2002-03-28
申请号：US10003631
申请日：2001-10-29
申请人： Semiconductor Energy Laboratory Co. Ltd., a Japanese corporation
发明人： Jun Koyama , Shunpei Yamazaki
IPC分类号： H01L029/04
CPC分类号： G09G3/3648 , G09G2300/0408 , G09G2300/043
摘要： A matrix type liquid-crystal display unit includes: a plurality of pixel portions which are arranged in the form of a matrix; a plurality of signal lines through which a display signal is supplied to the pixel portions; a plurality of scanning lines through which a scanning signal is supplied to the pixel portions; a signal-line drive circuit for driving the signal lines; a scanning-line drive circuit for driving the scanning-lines; a plurality of first thin-film transistors that form the signal-line drive circuit; a plurality of second thin-film transistors that form the scanning-line drive circuit; and a threshold value control circuit being connected to the signal-line drive circuit and the scanning-line drive circuit, for commonly controlling threshold values of the first and second thin-film transistors.
摘要翻译：矩阵型液晶显示单元包括：以矩阵形式布置的多个像素部分; 多个信号线，通过该信号线将显示信号提供给像素部分; 扫描信号被提供给像素部分的多条扫描线; 用于驱动信号线的信号线驱动电路; 用于驱动扫描线的扫描线驱动电路; 形成信号线驱动电路的多个第一薄膜晶体管; 形成扫描线驱动电路的多个第二薄膜晶体管; 以及阈值控制电路，连接到信号线驱动电路和扫描线驱动电路，用于共同地控制第一和第二薄膜晶体管的阈值。

8. 发明申请

US20020005516A1 Thin film circuit 有权
标题翻译：薄膜电路
公开(公告)号：US20020005516A1
公开(公告)日：2002-01-17
申请号：US09946723
申请日：2001-09-04
申请人： Semiconductor Energy Laboratory Co., Ltd. a Japanese corporation
发明人： Shunpei Yamazaki , Jun Koyama , Hisashi Ohtani
IPC分类号： H01L029/04
CPC分类号： H01L29/04 , H01L21/02532 , H01L21/02672 , H01L27/12 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： A practical operational amplifier circuit is formed using thin film transistors. An operational amplifier circuit is formed by thin film transistors formed on a quartz substrate wherein 90% or more of n-channel type thin film transistors have mobility at a value of 260 cm2/Vs or more and wherein 90% or more of p-channel type thin film transistors have mobility at a value of 150 cm2/Vs or more. The thin film transistors have active layers formed using a crystalline silicon film fabricated using a metal element that promoted crystallization of silicon. The crystalline silicon film is a collection of a multiplicity of elongate crystal structures extending in a certain direction, and the above-described characteristics can be achieved by matching the extending direction and the moving direction of carriers.
摘要翻译：使用薄膜晶体管形成实际的运算放大器电路。运算放大器电路由形成在石英衬底上的薄膜晶体管形成，其中n沟道型薄膜晶体管的90％以上的迁移率为260cm2 / Vs以上，其中90％以上的p沟道型薄膜晶体管的迁移率为150cm2 / Vs以上。薄膜晶体管具有使用使用促进硅结晶的金属元素制造的晶体硅膜形成的有源层。结晶硅膜是沿一定方向延伸的多个细长晶体结构的集合，并且可以通过匹配载流子的延伸方向和移动方向来实现上述特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式