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1. 发明专利

JP2013110397A Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013110397A
公开(公告)日：2013-06-06
申请号：JP2012233038
申请日：2012-10-22
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TOCHIBAYASHI KATSUAKI , HIGANO SATOSHI , YAMAZAKI SHUNPEI
IPC分类号： H01L21/336 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/28 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/78693 , H01L21/02071 , H01L21/32136 , H01L21/465 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and a method for manufacturing the semiconductor device with a high yield to achieve high productivity.SOLUTION: For a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step, and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed.
摘要翻译：要解决的问题：提供高可靠性的半导体器件和用于以高产率制造半导体器件的方法以实现高生产率。解决方案：对于包括依次堆叠栅电极层，栅极绝缘膜和氧化物半导体膜的晶体管的半导体器件和与氧化物半导体接触的源极电极层和漏极电极层通过蚀刻步骤形成源极电极层和漏极电极层，然后执行用于去除由蚀刻步骤产生并存在于氧化物半导体膜的表面上及其附近的杂质的步骤。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2014209593A 薄膜の加工方法、半導体装置の作製方法有权
标题翻译：加工薄膜的方法和制造半导体器件的方法
公开(公告)号：JP2014209593A
公开(公告)日：2014-11-06
申请号：JP2014054787
申请日：2014-03-18
申请人：株式会社半導体エネルギー研究所 , Semiconductor Energy Lab Co Ltd
发明人： MURAOKA TAIGA , KURATA MOTOMU , SASAGAWA SHINYA , TOCHIBAYASHI KATSUAKI
IPC分类号： H01L21/3065 , H01L21/336 , H01L29/786
CPC分类号： H01L21/02554 , H01L21/0212 , H01L21/02274 , H01L21/02381 , H01L21/02488 , H01L21/02565 , H01L21/02667 , H01L21/0337 , H01L21/31138 , H01L21/32136 , H01L21/32139 , H01L29/66969 , H01L29/7869
摘要：【課題】安定した薄膜の微細加工方法を提供する。または、微細化された半導体装置を提供する。【解決手段】基板101上に被加工膜102を形成し、被加工膜上に、有機塗布膜103を形成し、有機塗布膜上に、レジスト膜104を形成し、レジスト膜を露光し、レジスト膜の一部を現像により除去して有機塗布膜の一部を露出させ、プラズマ処理により、レジスト膜の上面及び側面に有機物層111を堆積させ、レジスト膜及び有機物層をマスクとして、有機塗布膜の一部をエッチングして被加工膜の一部を露出させ、レジスト膜及び有機物層をマスクとして、被加工膜の一部をエッチングする。【選択図】図1
摘要翻译：要解决的问题：提供薄膜的微细加工方法或提供微制造的半导体装置。解决方案：一种处理薄膜的方法包括以下步骤：在基板101上形成经处理的薄膜102; 在加工膜上形成有机涂膜103; 在有机涂膜上形成抗蚀剂膜104; 暴露抗蚀剂膜并通过显影去除一部分抗蚀剂膜，以暴露部分有机涂膜; 通过等离子体处理在有机层111的上表面和侧面上沉积; 通过使用抗蚀剂膜和有机层作为掩模蚀刻一部分有机涂膜来暴露一部分经处理的膜; 并使用抗蚀剂膜和有机层作为掩模来蚀刻被处理膜的一部分。

3. 发明专利

JP2013175713A Semiconductor device and semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：JP2013175713A
公开(公告)日：2013-09-05
申请号：JP2013009708
申请日：2013-01-23
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , HIZUKA JUNICHI , OKAZAKI KENICHI , IKEYAMA TERUMASA , TOCHIBAYASHI KATSUAKI
IPC分类号： H01L21/336 , C23C14/08 , G02F1/1368 , H01L21/363 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/7869 , H01L21/385 , H01L29/045 , H01L29/4908 , H01L29/66969 , H01L29/78606
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device which has a transistor using an oxide semiconductor.SOLUTION: In a semiconductor device having a bottom-gate transistor including an oxide semiconductor layer, by forming a first insulation layer in contact with the oxide semiconductor layer and performing oxygen doping treatment on the first insulation layer, a first insulation layer which contains an excess of oxygen than a stoichiometric composition is formed. By forming a second insulation layer on the first insulation layer, excess oxygen contained in the first insulation layer can be efficiently supplied to the oxide semiconductor layer. Accordingly, a highly reliable semiconductor device having stable electrical characteristic can be provided.
摘要翻译：要解决的问题：提供一种具有使用氧化物半导体的晶体管的高度可靠的半导体器件。解决方案：在具有包括氧化物半导体层的底栅晶体管的半导体器件中，通过形成与氧化物接触的第一绝缘层半导体层，并对第一绝缘层进行氧掺杂处理，形成含有比化学计量组成物多的氧的第一绝缘层。通过在第一绝缘层上形成第二绝缘层，可以有效地将包含在第一绝缘层中的多余的氧气供应到氧化物半导体层。因此，可以提供具有稳定电特性的高度可靠的半导体器件。

4. 发明专利

JP2014039019A Semiconductor device and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：JP2014039019A
公开(公告)日：2014-02-27
申请号：JP2013147331
申请日：2013-07-16
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： HIZUKA JUNICHI , SASAKI TOSHINARI , TOCHIBAYASHI KATSUAKI , YAMAZAKI SHUNPEI
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/283 , H01L21/768 , H01L23/532 , H01L27/146 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L29/78606 , G02F1/13306 , G02F1/133345 , G02F1/1339 , G02F1/134309 , G02F1/13439 , G02F1/136227 , G02F1/1368 , G02F2201/121 , G06F3/0412 , H01L27/1225 , H01L27/1248 , H01L27/14612 , H01L27/14616 , H01L27/15 , H01L27/3258 , H01L27/3262 , H01L29/66742 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To suppress variation in electrical characteristics of a semiconductor device having an interlayer insulation film on a transistor in which an oxide semiconductor is used for a semiconductor film.SOLUTION: A semiconductor device comprises a first insulation film containing silicon oxide and having a gap in a step difference region formed by a source electrode and a drain electrode on a semiconductor film, and a second insulation film containing silicon nitride and provided in contact with the first insulation film so as to cover the gap of the first insulation film. This structure can prevent the gap in the first insulation film from further expanding to the outside.
摘要翻译：要解决的问题：抑制在半导体膜中使用氧化物半导体的晶体管上具有层间绝缘膜的半导体器件的电特性的变化。解决方案：半导体器件包括含有氧化硅的第一绝缘膜，并且具有由半导体膜上的源电极和漏极形成的阶差差间隙，以及含有氮化硅的第二绝缘膜，与第一绝缘膜接触，以覆盖第一绝缘膜的间隙。该结构可以防止第一绝缘膜中的间隙进一步向外扩展。

5. 发明专利

JP2013110394A Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：JP2013110394A
公开(公告)日：2013-06-06
申请号：JP2012227338
申请日：2012-10-12
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： TOCHIBAYASHI KATSUAKI , HIGANO SATOSHI , YAMAZAKI SHUNPEI
IPC分类号： H01L29/786 , G02F1/1368 , H01L21/336 , H01L51/50 , H05B33/08 , H05B33/14
CPC分类号： H01L29/66969 , H01L29/22 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device and a method for manufacturing the semiconductor device.SOLUTION: In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×10atoms/cm, preferably lower than or equal to 1×10atoms/cm.
摘要翻译：要解决的问题：提供一种高度可靠的半导体器件和用于制造半导体器件的方法。解决方案：在包含用作沟道保护膜的绝缘层设置在氧化物半导体膜上的底栅晶体管的半导体器件中，可以防止包含在蚀刻气体中的元素作为杂质残留在表面上在形成设置在氧化物半导体膜上并与氧化物半导体膜接触的绝缘层和/或形成源极和漏极电极层之后进行杂质去除工艺。氧化物半导体膜的表面的杂质浓度低于或等于5×10原子/ cm 3 SP SP =“POST”> 3 ，优选小于或等于1×10原子/厘米3 SP SP =“POST”> 3 。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2011146697A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011146697A
公开(公告)日：2011-07-28
申请号：JP2010280294
申请日：2010-12-16
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MARUYAMA HODAKA , OIKAWA YOSHIAKI , TOCHIBAYASHI KATSUAKI
IPC分类号： H01L21/336 , G02F1/1368 , H01L21/20 , H01L29/786 , H01L51/50
CPC分类号： H01L27/1225 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/28185 , H01L27/1229 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To form an oxide semiconductor layer superior in crystallinity to manufacture a transistor superior in electrical characteristics, thereby to achieve the practical application of a large display device, a high-performance semiconductor device, etc. SOLUTION: By first heat treatment, a first oxide semiconductor layer is crystallized and a second oxide semiconductor layer is formed above the first oxide semiconductor layer. By second heat treatment performed in a step-by-step manner under conditions including different combinations of a temperature and an atmosphere, the formation of an oxide semiconductor layer and the filling of an oxygen deficiency are efficiently performed, wherein the oxide semiconductor layer includes a crystal region having the c-axis oriented in a direction substantially perpendicular to a surface. An oxide insulating layer in contact on the oxide semiconductor layer is formed. By performing third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed on the oxide insulating layer. By performing fourth heat treatment, hydrogen is supplied at least to an interface between the oxide semiconductor layer and the oxide insulating layer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了形成结晶度优异的氧化物半导体层以制造出电特性优异的晶体管，从而实现了大型显示装置，高性能半导体器件等的实际应用。解决方案：通过第一热处理，第一氧化物半导体层被结晶，并且在第一氧化物半导体层上形成第二氧化物半导体层。通过在包括温度和气氛的不同组合的条件下逐步进行的第二热处理，有效地进行氧化物半导体层的形成和缺氧的填充，其中氧化物半导体层包括晶体区域具有沿基本上垂直于表面的方向定向的c轴。形成在氧化物半导体层上接触的氧化物绝缘层。通过进行第三次热处理，再次向氧化物半导体层供给氧。在氧化物绝缘层上形成含有氢的氮化物绝缘层。通过进行第四热处理，至少向氧化物半导体层和氧化物绝缘层的界面供给氢。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2013070070A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2013070070A
公开(公告)日：2013-04-18
申请号：JP2012246206
申请日：2012-11-08
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , MARUYAMA HODAKA , OIKAWA YOSHIAKI , TOCHIBAYASHI KATSUAKI
IPC分类号： H01L29/786 , C23C14/34 , G02F1/1368 , G02F1/167 , G02F1/17 , H01L21/20 , H01L21/336 , H01L21/363 , H01L21/8242 , H01L21/8247 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L51/50
CPC分类号： H01L27/1225 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/28185 , H01L27/1229 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To form an oxide semiconductor layer excellent in crystallinity for enabling manufacturing of a transistor excellent in electrical properties to achieve the practical use of a large-size display device, a high-performance semiconductor device, and the like.SOLUTION: A manufacturing method of a semiconductor device comprises: performing a first heating treatment for crystallizing a first oxide semiconductor layer and forming a second oxide semiconductor layer on the first oxide semiconductor layer; performing a second heating treatment in a step-by-step manner under conditions different in temperature and atmosphere to efficiently perform formation of an oxide semiconductor layer having a crystal region in which a c-axis is oriented to a direction approximately perpendicular to a surface and to efficiently cover the deficiency of oxygen to form an oxide insulation layer contacting the oxide semiconductor layer; performing a third heating treatment for supplying oxygen to the oxide semiconductor layer again to form a hydrogen-containing nitride insulation layer on the oxide insulation layer; and performing a fourth heating treatment for supplying hydrogen at least to a boundary face between the oxide semiconductor layer and the oxide insulation layer.
摘要翻译：要解决的问题：为了形成具有优异的电性能的晶体管的结晶性优异的氧化物半导体层，以实现大尺寸显示装置，高性能半导体装置等的实际应用。解决方案：半导体器件的制造方法包括：对第一氧化物半导体层进行结晶并在第一氧化物半导体层上形成第二氧化物半导体层的第一加热处理; 在温度和气氛不同的条件下逐步进行第二次加热处理，以有效地形成具有c轴取向为大致垂直于表面的方向的晶体区域的氧化物半导体层，以及有效地覆盖氧的不足以形成与氧化物半导体层接触的氧化物绝缘层; 对氧化物半导体层再次进行氧化，进行第三加热处理，以在氧化物绝缘层上形成含氢氮化物绝缘层; 以及至少对氧化物半导体层和氧化物绝缘层之间的边界面进行氢的供给的第四加热处理。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012238826A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2012238826A
公开(公告)日：2012-12-06
申请号：JP2011142780
申请日：2011-06-28
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： YAMAZAKI SHUNPEI , TAKAHASHI MASAHIRO , HIROHASHI TAKUYA , TOCHIBAYASHI KATSUAKI , NAKAZAWA YASUTAKA , YOKOYAMA MASATOSHI
IPC分类号： H01L29/786 , H01L21/28 , H01L21/336 , H01L29/417
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/4908 , H01L29/78606 , H01L29/78693
摘要： PROBLEM TO BE SOLVED: To increase the reliability of a semiconductor device including an oxide semiconductor by giving stable electric characteristics to the semiconductor device.SOLUTION: A semiconductor device comprises a multilayer structure including: a gate insulation layer; a first gate electrode in contact with one plane of the gate insulation layer; an oxide semiconductor layer in contact with the other plane of the gate insulation layer and provided in a region overlapping with the first gate electrode; and a source electrode, a drain electrode, and an oxide insulation layer which are in contact with the oxide semiconductor layer. The nitrogen concentration of the oxide semiconductor layer is 2×10atoms/cmor less, and the source electrode and the drain electrode are each formed using one element or a plurality of elements selected from tungsten, platinum, and molybdenum.
摘要翻译：要解决的问题：通过给半导体器件提供稳定的电特性来提高包括氧化物半导体的半导体器件的可靠性。解决方案：半导体器件包括多层结构，包括：栅极绝缘层; 与所述栅极绝缘层的一个平面接触的第一栅电极; 与所述栅绝缘层的另一平面接触并且设置在与所述第一栅电极重叠的区域中的氧化物半导体层; 以及与氧化物半导体层接触的源电极，漏电极和氧化物绝缘层。氧化物半导体层的氮浓度为2×10原子/ cm 3以下的源电极和/或漏电极各自使用选自钨，铂和钼的一种元素或多种元素形成。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2012084852A Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2012084852A
公开(公告)日：2012-04-26
申请号：JP2011195363
申请日：2011-09-07
申请人： Semiconductor Energy Lab Co Ltd , 株式会社半導体エネルギー研究所
发明人： KAMINAGA MASAMI , AIHARA YAMATO , TOCHIBAYASHI KATSUAKI , ARAKAWA TORU
IPC分类号： H01L21/336 , H01L21/28 , H01L21/3065 , H01L29/417 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/441 , H01L21/47573 , H01L29/045 , H01L29/24 , H01L29/45 , H01L29/66742 , H01L29/78606 , H01L29/7869
摘要： PROBLEM TO BE SOLVED: To provide a technique for manufacturing a semiconductor device having a high performance and high reliable transistor.SOLUTION: When forming a wiring layer from a conductive layer, a protective conductive film for protecting an oxide semiconductor layer is formed between the oxide semiconductor layer and the conductive layer to perform two stages of etching. A first etching step employs an etching method performed under a condition that the protective conductive film is less prone to be etched than the conductive layer and an etching selection ratio of the conductive layer to the protective conductive film is high. A second etching step employs an etching method performed under a condition that the protective conductive film is more prone to be etched than the oxide semiconductor layer and the etching selection ratio of the protective conductive film to the oxide semiconductor layer is high.
摘要翻译：要解决的问题：提供一种具有高性能和高可靠性晶体管的半导体器件的制造技术。解决方案：当从导电层形成布线层时，在氧化物半导体层和导电层之间形成用于保护氧化物半导体层的保护导电膜，以进行两个阶段的蚀刻。第一蚀刻步骤采用在保护导电膜比导电层更不容易被蚀刻的条件下进行的蚀刻方法，并且导电层与保护性导电膜的蚀刻选择比率高。第二蚀刻步骤采用在保护导电膜比氧化物半导体层更易于蚀刻的条件下进行的蚀刻方法，并且保护性导电膜与氧化物半导体层的蚀刻选择比高。版权所有（C）2012，JPO＆INPIT

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