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1. 发明授权

US4077258A Method of determining liquid level in a petroleum cracking reactor 失效
标题翻译：确定石油裂解反应器中液面的方法
公开(公告)号：US4077258A
公开(公告)日：1978-03-07
申请号：US742101
申请日：1976-11-16
申请人： Seiichi Suzuki , Masahiro Yamaguchi , Saburo Takahashi , Keiji Nagayama
发明人： Seiichi Suzuki , Masahiro Yamaguchi , Saburo Takahashi , Keiji Nagayama
IPC分类号： C10C3/10 , G01F23/14 , G01F23/16
CPC分类号： G01F23/14
摘要： An improved method for determining the liquid level in a petroleum thermal cracking reactor by injecting oil into the reactor at a predetermined rate not less than 5 cm/sec and measuring the liquid pressure at the point of injection and calculating the liquid level from the measured pressure.
摘要翻译：一种用于通过以不小于5cm / sec的预定速率将油注入反应器并测量注射点处的液体压力并从测量的压力计算液体水平来确定石油热裂解反应器中的液位的改进方法。

2. 发明授权

US08437168B2 Josephson quantum computing device and integrated circuit using such devices 有权
公开(公告)号：US08437168B2
公开(公告)日：2013-05-07
申请号：US13607516
申请日：2012-09-07
申请人： Sadamichi Maekawa , Taro Yamashita , Saburo Takahashi
发明人： Sadamichi Maekawa , Taro Yamashita , Saburo Takahashi
IPC分类号： G11C11/00
CPC分类号： G06N99/002 , B82Y10/00
摘要： A Josephson quantum computing device and an integrated circuit using Josephson quantum computing devices which can realize a NOT gate operation controlled with 2 bits will be provided. The Josephson quantum computing device (1) comprises: a superconducting ring member (10) having a π-junction (6) and a 0-junction (7); and a quantum state detecting member (20) constituted by a superconducting quantum interference device arranged outside of the superconducting ring member, wherein a bonding and an antibonding state brought about by a tunneling effect between a |↑> and a |↓> state as two states degenerate in energy of the superconducting ring member (10) are regarded as quantum bits. The bonding and antibonding states as the quantum bits are read out by the quantum state detecting member (20). The two bit controlled NOT gate operation can be performed by the two quantum bits comprising said quantum bits.

3. 发明申请

US20060022220A1 Spin-injection device and magnetic device using spin-injection device 失效
标题翻译：旋转注射装置和使用自旋注射装置的磁性装置
公开(公告)号：US20060022220A1
公开(公告)日：2006-02-02
申请号：US10536437
申请日：2003-11-20
申请人： Kouichiro Inomata , Sadamichi Maekawa , Saburo Takahashi
发明人： Kouichiro Inomata , Sadamichi Maekawa , Saburo Takahashi
IPC分类号： H01L29/76 , H01L43/00
CPC分类号： H01L29/66984 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/39 , G11B5/3903 , G11B5/3909 , H01L39/228 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193
摘要： A first and a second tunnel junctions (2 and 3) which have a common electrode composed of a nonmagnetic conductor (4) and each of which has a counterelectrode composed of a ferromagnet (6, 8) are disposed spaced apart from each other by a distance that is shorter than a spin diffusion length of the nonmagnetic conductor (4) wherein the first tunnel junction (2) acts to inject spins from the ferromagnet (6) into the nonmagnetic conductor (4) and the second tunnel junction (3) serves to detect, between the ferromagnetic metal (8) and the nonmagnetic conductor (4), a voltage that accompanies spin injection of the first tunnel junction (2) and wherein the nonmagnetic conductor (4) is a nonmagnetic conductor, such as a semiconductor or a semimetal, that is lower in carrier density than a metal. The common electrode alternatively may be composed of a superconductor (4′). A spin injection device thus provided can exhibit a large signal voltage with low current and under low magnetic field and can be miniaturized in device size. Magnetic apparatuses utilizing such a spin injection device are also provided.
摘要翻译：具有由非磁性导体（4）组成的公共电极并且每个具有由铁磁体（6,8）组成的反电极的第一和第二隧道结（2和3）通过一个其中第一隧道结（2）用于将自旋从铁磁体（6）注入到非磁性导体（4）和第二隧道结（3）中的非磁性导体（4）的自旋扩散长度的距离在所述铁磁金属（8）和所述非磁性导体（4）之间检测伴随所述第一隧道结（2）的自旋注入的电压，并且其中所述非磁性导体（4）是非磁性导体，例如半导体或半金属，其载体密度低于金属。公共电极可以由超导体（4'）组成。如此提供的自旋注入装置可以在低电流和低磁场下显示大信号电压，并且可以在装置尺寸上小型化。还提供了利用这种自旋注入装置的磁性装置。

4. 发明授权

US08284585B2 Josephson quantum computing device and integrated circuit using such devices 有权
标题翻译：约瑟夫森量子计算设备和使用这种设备的集成电路
公开(公告)号：US08284585B2
公开(公告)日：2012-10-09
申请号：US11658647
申请日：2005-07-25
申请人： Sadamichi Maekawa , Taro Yamashita , Saburo Takahashi
发明人： Sadamichi Maekawa , Taro Yamashita , Saburo Takahashi
IPC分类号： G11C11/00
CPC分类号： G06N99/002 , B82Y10/00
摘要： A Josephson quantum computing device and an integrated circuit using Josephson quantum computing devices which can realize a NOT gate operation controlled with 2 bits will be provided. The Josephson quantum computing device (1) comprises: a superconducting ring member (10) having a π-junction (6) and a 0-junction (7); and a quantum state detecting member (20) constituted by a superconducting quantum interference device arranged outside of the superconducting ring member, wherein a bonding and an antibonding state brought about by a tunneling effect between a |↑> and a |↓> state as two states degenerate in energy of the superconducting ring member (10) are regarded as quantum bits. The bonding and antibonding states as the quantum bits are read out by the quantum state detecting member (20). The two bit controlled NOT gate operation can be performed by the two quantum bits comprising said quantum bits.
摘要翻译：将提供约瑟夫森量子计算设备和使用约瑟夫森量子计算设备的集成电路，其可以实现以2位控制的非门操作。约瑟夫森量子计算装置（1）包括：具有结点（6）和0结（7）的超导环构件（10）; 和由超导量子干涉元件构成的量子态检测元件（20），该超导量子干涉元件设置在超导环形元件外部，其中由|↑>↑>状态之间的隧道效应引起的接合和反应状态为二超导环构件（10）的能量退化的状态被认为是量子位。作为量子比特的键合反应状态由量子状态检测部件（20）读出。两位控制的非门操作可以由包括所述量子位的两个量子位执行。

5. 发明授权

US4603893A Pipe coupling joint 失效
标题翻译：管接头
公开(公告)号：US4603893A
公开(公告)日：1986-08-05
申请号：US685467
申请日：1984-12-24
申请人： Saburo Takahashi
发明人： Saburo Takahashi
IPC分类号： F16L21/06 , F16L17/02
CPC分类号： F16L21/06 , Y10S285/91
摘要： A pipe coupling joint including a pair of rubber packings, with one each being installed onto the outer circumferential surface of one of two pipe segments at the area near the leading end thereof set in alignment and closely opposed relationship with each other, a middle ring of cylindrical shape disposed closely in the middle position between the pair of rubber packings, and a pair of clamp rings. The two pipe segments are joined with each other by having the pair of rubber packings secured and urged in an operative position of engagement between the clamping face of the middle ring and the pair of clamp rings, wherein each of the rubber packings is defined with the top corner at the outer circumference thereof cut away at an oblique angle with respect to its mating surface with the middle ring, and wherein there is formed a step formation which rises at a substantial angle with respect to the inclined clamping face of the middle ring.
摘要翻译：一种管接头，包括一对橡胶填料，其中一个橡胶填料每个安装在两个管段中的一个管段的外圆周表面上，位于其前端附近的区域彼此对齐并且彼此紧密地相对关系;中间环圆柱形状紧密地配置在一对橡胶填充物之间的中间位置，以及一对夹紧环。两个管段通过使一对橡胶密封件固定并且被推压在中间环的夹紧面和一对夹紧环之间的操作位置上而相互连接，其中每个橡胶填料均由其外圆周上的角部相对于其与中间环的配合表面以倾斜角切割，并且其中形成有相对于中间环的倾斜夹紧面以相当角度上升的台阶形状。

6. 发明申请

US20080175044A1 MAGNETIC MEMORY CELL AND MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆体和磁记忆体装置
公开(公告)号：US20080175044A1
公开(公告)日：2008-07-24
申请号：US11970550
申请日：2008-01-08
申请人： Sadamichi MAEKAWA , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
发明人： Sadamichi MAEKAWA , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.
摘要翻译：本发明的目的在于减少存储单元的热量波动，从而当不使用反转磁场的磁化反转处理用于写入存储单元时提供稳定的写入操作。磁存储单元的结构是将第一和第二磁化锁定端子与它们之间的空间连接到非磁性区域的一个表面，并且无磁性端子连接到另一个表面。第一和第二磁化钉扎端子的磁化方向彼此反平行。通过控制通过非磁性区域在第一和第二磁化被固定端子之间流动的电流的极性，从而使无磁性端子的磁化反转来进行写入。通过检测归因于第一磁化固定端子和无磁化端子之间的相对磁化方向的变化的磁阻来执行读取。

7. 发明授权

US07755929B2 Spin-injection device and magnetic device using spin-injection device 失效
标题翻译：旋转注射装置和使用自旋注射装置的磁性装置
公开(公告)号：US07755929B2
公开(公告)日：2010-07-13
申请号：US10536437
申请日：2003-11-20
申请人： Kouichiro Inomata , Sadamichi Maekawa , Saburo Takahashi
发明人： Kouichiro Inomata , Sadamichi Maekawa , Saburo Takahashi
IPC分类号： G11C11/02 , G11B5/39 , G11B5/127
CPC分类号： H01L29/66984 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/39 , G11B5/3903 , G11B5/3909 , H01L39/228 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1193
摘要： First and second tunnel junctions having a common electrode composed of a nonmagnetic conductor and each of which has a counterelectrode composed of a ferromagnet are spaced apart from each other by a distance that is shorter than a spin diffusion length of the nonmagnetic conductor. The first tunnel junction injects spin from the ferromagnet into the nonmagnetic conductor and the second tunnel junction detects, between the ferromagnetic metal and the nonmagnetic conductor, a voltage that accompanies spin injection of the first tunnel junction. The nonmagnetic conductor may be a semiconductor or semimetal that is lower in carrier density than a metal. The common electrode alternatively may be composed of a superconductor. A spin injection device thus provided can exhibit a large signal voltage with a low current and under low magnetic field and can be miniaturized in device size.
摘要翻译：具有由非磁性导体构成的共用电极和具有由铁磁体构成的对电极的公共电极的第一和第二隧道结彼此隔开比非磁性导体的自旋扩散长度短的距离。第一隧道结将铁磁体的旋转注入到非磁性导体中，第二隧道结在铁磁金属和非磁性导体之间检测伴随着第一隧道结的自旋注入的电压。非磁性导体可以是载体密度低于金属的半导体或半金属。公共电极可以由超导体组成。如此提供的自旋注入装置可以以低电流和低磁场显示大信号电压，并且可以在装置尺寸上小型化。

8. 发明授权

US07688623B2 Magnetic memory cell and magnetic memory device 有权
标题翻译：磁存储单元和磁存储器件
公开(公告)号：US07688623B2
公开(公告)日：2010-03-30
申请号：US11970550
申请日：2008-01-08
申请人： Sadamichi Maekawa , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
发明人： Sadamichi Maekawa , Saburo Takahashi , Hiroshi Imamura , Masahiko Ichimura , Hiromasa Takahashi
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： The present invention aims to reduce heat fluctuations of a memory cell and thereby provide a stable writing operation when a magnetization reversal process not involving a reversal magnetic field is used for writing into the memory cell. The magnetic memory cell has a structure where first and second magnetization pinned terminals are connected, with a space therebetween, to one surface of a non-magnetic region, and a magnetization free terminal is connected to the other surface. Magnetization directions of the first and second magnetization pinned terminals are anti-parallel to each other. Writing is performed by controlling a polarity of a current flowing between the first and second magnetization pinned terminals through the non-magnetic region and thus reversing magnetization of the magnetization free terminal. Reading is performed by detecting a magnetic resistance attributable to a change in relative magnetization direction between the first magnetization pinned terminal and the magnetization free terminal.
摘要翻译：本发明的目的在于减少存储单元的热量波动，从而当不使用反转磁场的磁化反转处理用于写入存储单元时提供稳定的写入操作。磁存储单元的结构是将第一和第二磁化锁定端子与它们之间的空间连接到非磁性区域的一个表面，并且无磁性端子连接到另一个表面。第一和第二磁化钉扎端子的磁化方向彼此反平行。通过控制通过非磁性区域在第一和第二磁化被固定端子之间流动的电流的极性，从而使无磁性端子的磁化反转来进行写入。通过检测归因于第一磁化固定端子和无磁化端子之间的相对磁化方向的变化的磁阻来执行读取。

9. 发明授权

US06409576B1 Polishing apparatus 失效
标题翻译：抛光设备
公开(公告)号：US06409576B1
公开(公告)日：2002-06-25
申请号：US09626124
申请日：2000-07-26
申请人： Syozo Oguri , Masafumi Inoue , Saburo Takahashi
发明人： Syozo Oguri , Masafumi Inoue , Saburo Takahashi
IPC分类号： B24B4900
CPC分类号： H01L21/67219 , B24B37/013 , B24B37/345 , B24B49/12
摘要： A polishing apparatus for polishing a surface of a workpiece has a polishing section for polishing a surface of a workpiece, a cleaning section for cleaning a polished surface of the workpiece, a rotating mechanism for rotating the workpiece during cleaning or after cleaning, and a sensor for detecting a reference position of the workpiece. The polishing apparatus further having a controller for controlling the rotating mechanism to stop the workpiece against rotation to align the reference position with a predetermined position based on a detecting signal from the sensor, and a film thickness measuring device for measuring a thickness of a polished surface layer of the aligned workpiece.
摘要翻译：用于抛光工件表面的抛光装置具有用于抛光工件表面的抛光部分，用于清洁工件的抛光表面的清洁部分，用于在清洁期间或清洁之后使工件旋转的旋转机构，以及传感器用于检测工件的基准位置。所述研磨装置还具有控制器，所述控制器用于控制所述旋转机构，以基于来自所述传感器的检测信号，使所述工件停止旋转，以使所述基准位置与预定位置对准;以及膜厚测量装置，用于测量抛光表面的厚度对齐的工件的层。

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