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1. 发明授权

US5838715A High intensity single-mode VCSELs 失效
标题翻译：高强度单模VCSEL
公开(公告)号：US5838715A
公开(公告)日：1998-11-17
申请号：US667259
申请日：1996-06-20
申请人： Scott W. Corzine , Dubravko I. Babic , Richard P. Schneider, Jr. , Michael R. Tan , Shih-Yuan Wang
发明人： Scott W. Corzine , Dubravko I. Babic , Richard P. Schneider, Jr. , Michael R. Tan , Shih-Yuan Wang
IPC分类号： H01S5/00 , H01S5/183 , H01S3/08 , H01S3/19
CPC分类号： H01S5/18388 , H01S2301/166 , H01S5/1089 , H01S5/18308 , H01S5/18327 , H01S5/18372 , H01S5/2063
摘要： A VCSEL 101 comprising an optical cavity having an optical loss and a loss-determining element 117 coupled to the optical cavity. The loss-determining element 117 progressively increases the optical loss of the optical cavity with increasing lateral distance from the optical axis 105. The optical cavity includes a first mirror region 111, a second mirror region 107, a plane light-generating region 125 sandwiched between the first mirror region 111 and the second mirror region 107, perpendicular to the optical axis 105, and an element 113 that defines the lateral extent of the optical cavity in the plane of the light-generating region 125. The first mirror region 111 and the second mirror region 107 are both conductive and have opposite conductivity modes.
摘要翻译：包括具有光学损耗的光学腔和耦合到光腔的损耗确定元件117的VCSEL 101。损耗确定元件117随着从光轴105的横向距离的增加而逐渐增加光学腔的光学损耗。光学腔包括第一镜面区域111，第二镜面区域107，夹在两者之间的平面光产生区域125 垂直于光轴105的第一镜面区域111和第二镜面区域107以及限定光产生区域125的平面中的光腔的横向范围的元件113.第一镜面区域111和第二反射镜区域107都是导电的并具有相反的导电模式。

2. 发明授权

US06252896B1 Long-Wavelength VCSEL using buried bragg reflectors 有权
标题翻译：长波长VCSEL使用埋地布拉格反射器
公开(公告)号：US06252896B1
公开(公告)日：2001-06-26
申请号：US09263696
申请日：1999-03-05
申请人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
发明人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
IPC分类号： H01S500
CPC分类号： H01S5/426 , H01S5/0215 , H01S5/0216 , H01S5/041 , H01S5/18311 , H01S5/18369
摘要： An optically pumped vertical-cavity surface-emitting laser (VCSEL) device and a method of fabricating the device utilize two separate substrates that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light to drive the device to emit output laser light having a long peak wavelength. The optically pumped VCSEL device includes a short-wavelength VCSEL formed on one of the two substrates and a long-wavelength VCSEL formed on the other substrate. The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要翻译：光泵浦垂直腔表面发射激光器（VCSEL）器件和制造该器件的方法利用执行滤波操作的两个分离的衬底，以仅选择性地仅透射由器件产生的具有长峰值波长的光。光泵浦VCSEL器件是自泵浦器件，其可以产生泵浦光以驱动器件发射具有长峰值波长的输出激光。光泵浦VCSEL器件包括形成在两个衬底中的一个上的短波长VCSEL和在另一衬底上形成的长波长VCSEL。短波长VCSEL是产生短波长光以驱动（即光泵浦）长波长VCSEL的电流驱动VCSEL。短波长VCSEL和长波长VCSEL被结合在一起，使得两个基板被两个VCSEL隔开。可以使用透明光学粘合剂材料或金属粘合材料将短波长VCSEL粘合到长波长VCSEL上。衬底相对于传播光是波长选择性的，使得由短波长VCSEL产生并且不被长波长VCSEL吸收的短波长光主要被两个分离的衬底吸收。然而，由长波长VCSEL产生的长波长光被允许通过基板作为输出激光传输。

3. 发明授权

US06553051B1 System for optically pumping a long wavelength laser using a short wavelength laser 有权
标题翻译：使用短波长激光器对长波长激光进行光学泵浦的系统
公开(公告)号：US06553051B1
公开(公告)日：2003-04-22
申请号：US09703389
申请日：2000-10-31
申请人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
发明人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
IPC分类号： H01S3091
CPC分类号： H01S5/02212 , H01L2224/48091 , H01S5/02284 , H01S5/041 , H01S5/18369 , H01S5/32366 , H01L2924/00014
摘要： An optical assembly includes an optical subassembly containing a prefabricated long wavelength laser optically coupled to a prefabricated short wavelength laser located in a housing. The optical subassembly may be removably installed in the housing in which the short wavelength laser is contained. The short wavelength laser optically pumps the long wavelength laser resulting in a long wavelength laser output. The optical subassembly allows the independent fabrication, optimization and testing of the short wavelength laser and the long wavelength laser.
摘要翻译：光学组件包括光学子组件，其包含光学耦合到位于壳体中的预制短波长激光器的预制长波长激光器。光学子组件可以可拆卸地安装在容纳短波长激光器的壳体中。短波长激光器对长波长激光器进行光泵浦，产生长波长激光输出。光学子组件允许短波长激光器和长波长激光器的独立制造，优化和测试。

4. 发明授权

US06483862B1 System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer 失效
标题翻译：用于使用天然氧化物半导体层的发光器件和光电检测器的单片集成的系统和方法
公开(公告)号：US06483862B1
公开(公告)日：2002-11-19
申请号：US09209528
申请日：1998-12-11
申请人： Lewis B. Aronson , Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic
发明人： Lewis B. Aronson , Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic
IPC分类号： H01S500
CPC分类号： H01S5/0264 , H01L27/15 , H01S5/0425 , H01S5/183 , H01S5/2027
摘要： A light emitting device and photodetector combination having a structure in which the layer of the photodetector that contacts the light emitting device is separated from the light emitting device by a native semiconductor oxide layer that is both insulating and has a refractive index lower than that of the light emitting device and the photodetector. This configuration results in a light emitting device and photodetector structure that minimizes the capture of the spontaneous emission light output from the light emitting device by the photodetector while electrically isolating the light emitting device from the photodetector. The electrical isolation of the light emitting device from the photodetector results in a four terminal device in which the light emitting device and photodetector may be independently biased, and can therefore be operated at a very low bias voltage.
摘要翻译：一种发光器件和光电检测器组合，具有这样一种结构，其中接触发光器件的光电检测器层通过天然半导体氧化物层与发光器件分离，该天然半导体氧化物层是绝缘的并且折射率低于发光器件和光电检测器。这种配置导致发光器件和光电检测器结构，其使由光电检测器从发光器件输出的自发发射光的捕获最小化，同时将发光器件与光电检测器电隔离。发光器件与光检测器的电隔离导致四端器件，其中发光器件和光电检测器可以被独立地偏置，因此可以在非常低的偏置电压下操作。

5. 发明授权

US06188711B1 Polarization-controlled VCSELs using externally applied uniaxial stress 失效
标题翻译：使用外部施加的单轴应力的极化控制VCSEL
公开(公告)号：US06188711B1
公开(公告)日：2001-02-13
申请号：US08993006
申请日：1997-12-18
申请人： Scott W. Corzine , Michael R. T. Tan , Albert T. Yuen , Dubravko I. Babic
发明人： Scott W. Corzine , Michael R. T. Tan , Albert T. Yuen , Dubravko I. Babic
IPC分类号： H01S512
CPC分类号： H01S5/18355 , H01S5/0607
摘要： A Vertical Cavity Surface-Emitting Laser (VCSEL) assembly in which the polarization is locked to a specified direction that is the same for all VCSELs. A VCSEL according to the present invention includes a VCSEL having a top mirror region, a bottom mirror region, a light generation region between the top and bottom mirror regions, a conducting substrate and a bottom electrode. The bottom mirror region is sandwiched between the conducting substrate and the light generation region, and the conducting substrate is sandwiched between the bottom electrode and the bottom mirror region. The assembly also includes a mounting substrate having top and bottom surfaces, the VCSEL being mechanically coupled to the mounting substrate. The mounting substrate includes a means for defining a first axis. The assembly includes a means for causing the mounting substrate to flex about the first axis thereby inducing a strain in the light generation region which locks the polarization into a mode determined by the first axis. In one embodiment of the present invention, the first axis is defined by a channel in the mounting substrate. The mounting substrate is caused to flex by the application of an adhesive layer applied between the mounting substrate and a mounting surface. The adhesive layer has a thermal coefficient of expansion different from the mounting substrate. In another embodiment, trenches whose direction defines the first axis are located in the top mirror region of the VCSEL.
摘要翻译：垂直腔表面发射激光（VCSEL）组件，其中偏振被锁定到对于所有VCSEL相同的指定方向。根据本发明的VCSEL包括VCSEL，其具有顶部反射镜区域，底部反射镜区域，顶部和底部反射镜区域之间的发光区域，导电基底和底部电极。底部反射镜区域夹在导电衬底和光产生区域之间，并且导电衬底夹在底部电极和底部镜像区域之间。组件还包括具有顶表面和底表面的安装衬底，VCSEL机械地联接到安装衬底。安装基板包括用于限定第一轴线的装置。该组件包括用于使安装基板围绕第一轴弯曲的装置，从而在将偏振锁定为由第一轴确定的模式的光产生区域中引起应变。在本发明的一个实施例中，第一轴由安装基板中的通道限定。通过施加施加在安装基板和安装表面之间的粘合剂层，使安装基板挠曲。粘合剂层具有与安装基板不同的热膨胀系数。在另一个实施例中，其方向限定第一轴的沟槽位于VCSEL的顶部反射镜区域中。

6. 发明授权

US06222202B1 System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation 有权
标题翻译：用于低偏压操作的发光器件和光电检测器的单片集成的系统和方法
公开(公告)号：US06222202B1
公开(公告)日：2001-04-24
申请号：US09167961
申请日：1998-10-06
申请人： Dubravko I. Babic , Scott W. Corzine
发明人： Dubravko I. Babic , Scott W. Corzine
IPC分类号： H01L3300
CPC分类号： H01S5/0264 , H01S5/0421 , H01S5/0427 , H01S5/183 , Y10S257/928
摘要： A light emitting device and photodetector combination having a structure where the layer of the photodetector that contacts the light emitting device has a semiconductor conductivity type polarity opposite that of the light emitting device. This configuration results in a light emitting device and photodetector structure that has a very low bias voltage requirement. Additionally, by shunting any current flowing through the junction formed where the light emitting device meets the photodetector, the bias voltage requirement is further reduced.
摘要翻译：一种发光器件和光电检测器组合，其具有与发光器件接触的光电检测器的层具有与发光器件相反的半导体导电类型极性的结构。该配置导致发光器件和光电检测器结构具有非常低的偏置电压要求。此外，通过分流流过发光器件与光电检测器所形成的结的任何电流，偏压要求进一步降低。

7. 发明授权

US06277696B1 Surface emitting laser using two wafer bonded mirrors 失效
标题翻译：使用两个晶片粘合镜的表面发射激光
公开(公告)号：US06277696B1
公开(公告)日：2001-08-21
申请号：US08751038
申请日：1996-11-15
申请人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
发明人： Kent W. Carey , Long Yang , John E. Bowers , Dubravko I. Babic , James J. Dudley
IPC分类号： H01L2120
CPC分类号： H01S5/1838 , H01S5/18305 , H01S5/18308 , H01S5/18341 , H01S5/2063
摘要： The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.
摘要翻译：本发明提供一种在所需波长范围内具有高增益和高反射率的垂直腔表面发射激光器以及良好的导热和导热性。激光器结构由第一反射镜区域，第二反射镜区域和位于第一和第二镜像区域之间的有源区域组成。与先前的VCSEL不同，有源区域融合到第一镜像区域和第二镜像区域两者。这允许激光设计者通过允许为第一镜面区域，第二镜面区域和有源区域选择不同的材料来优化所需波长范围的激光器性能。

8. 发明授权

US08796843B1 RF and milimeter-wave high-power semiconductor device 有权
标题翻译：射频和毫米波大功率半导体器件
公开(公告)号：US08796843B1
公开(公告)日：2014-08-05
申请号：US12855274
申请日：2010-08-12
申请人： Dubravko I. Babic , Quentin E. Diduck , Alex Schreiber
发明人： Dubravko I. Babic , Quentin E. Diduck , Alex Schreiber
IPC分类号： H01L23/48 , H01L23/34
CPC分类号： H01L24/17 , H01L23/047 , H01L23/3675 , H01L23/40 , H01L23/4006 , H01L23/4824 , H01L23/49844 , H01L23/4985 , H01L23/49866 , H01L23/544 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L24/81 , H01L2023/4062 , H01L2223/54426 , H01L2223/54486 , H01L2224/10165 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/17517 , H01L2224/291 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/32245 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73253 , H01L2224/73265 , H01L2224/8114 , H01L2224/81191 , H01L2924/10155 , H01L2924/1305 , H01L2924/1306 , H01L2924/00014 , H01L2924/00 , H01L2924/0665 , H01L2924/014
摘要： High-power and high-frequency semiconductor devices require high signal integrity and high thermal conductance assembly technologies and packages. In particular, wide-gap-semiconductor devices on diamond benefit from spatially separate electrical and thermal connections. This application discloses assembly and package architectures that offer high signal integrity and high thermal conductance.
摘要翻译：大功率和高频半导体器件需要高信号完整性和高导热组装技术和封装。特别地，金刚石上的宽间隙半导体器件从空间上分离的电和热连接中获益。本申请公开了提供高信号完整性和高导热性的组装和封装体系结构。

9. 发明授权

US06236671B1 System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation 失效
标题翻译：用于低偏压操作的发光器件和异质结光电晶体管的单片集成的系统和方法
公开(公告)号：US06236671B1
公开(公告)日：2001-05-22
申请号：US09183030
申请日：1998-10-29
申请人： Dubravko I. Babic
发明人： Dubravko I. Babic
IPC分类号： H01S5026
CPC分类号： H01S5/0264 , H01S5/0421 , H01S5/0427 , H01S5/183 , Y10S257/928
摘要： A light emitting device and heterojunction phototransistor combination having a structure where a p-type material terminal of a laser is common with an emitter of a PNP heterojunction phototransistor. This configuration results in a light emitting device and heterojunction phototransistor structure that has a drastically reduced bias voltage requirement and that allows independent biasing of the laser and the heterojunction phototransistor.
摘要翻译：具有其中激光器的p型材料端子与PNP异质结光电晶体管的发射极共同的结构的发光器件和异质结光电晶体管组合。该配置导致发光器件和异质结光电晶体管结构具有显着降低的偏置电压要求，并且允许激光器和异质结光电晶体管的独立偏置。

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