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1. 发明授权

US5856561A Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions 失效
标题翻译：双酚羧酸叔酯衍生物和化学放大正型抗蚀剂组合物
公开(公告)号：US5856561A
公开(公告)日：1999-01-05
申请号：US710298
申请日：1996-09-17
申请人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , C07C69/734 , C08F12/00 , C08F12/22 , C08K5/10 , C08K5/107 , C08L25/00 , C08L25/08 , C08L25/18 , G03F7/039 , H01L21/027 , C07C69/76
CPC分类号： C07C69/734
摘要： Novel bisphenol carboxylic acid tertiary ester derivatives having two aromatic ether groups and an ester group which are all replaced by acid labile groups are provided. The derivatives are used as a dissolution inhibitor in a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, and a photo-acid generator. Since the dissolution inhibitor has a highly reactive acetal group as an acid labile group, its coupling-off rapidly takes place after exposure. The dissolution inhibitor itself is less alkali soluble and its acid decomposition product is a phenol derivative having a carboxylic acid group with high alkali solubility, leading to a high dissolution contrast.
摘要翻译：提供了具有两个芳族醚基团和酯基的新的双酚羧酸叔酯衍生物，它们均被酸不稳定基团所取代。该衍生物在包含有机溶剂，碱溶性树脂和光酸发生剂的化学放大型正性抗蚀剂组合物中用作溶解抑制剂。由于溶解抑制剂具有作为酸不稳定基团的高反应性缩醛基团，因此其暴露后快速发生偶联。溶解抑制剂本身的碱溶性较小，其酸分解产物是具有高碱溶性的羧酸基的苯酚衍生物，导致高的溶解对比度。

2. 发明授权

US5880169A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5880169A
公开(公告)日：1999-03-09
申请号：US742324
申请日：1996-11-01
申请人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Yoichi Osawa , Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , G03F7/039 , G03F7/038
CPC分类号： G03F7/0045
摘要： The invention provides a novel sulfonium salt having at least one acid labile group attached to a phenyl group in a molecule and a normal, branched or cyclic C.sub.1 -C.sub.20 alkylsulfonate anion. The novel sulfonium salt is effective for increasing the dissolution contrast between exposed and unexposed areas. Upon exposure, it generates an alkylsulfonic acid which is a weak acid, minimizing the influence of side reaction and deactivation during PEB step. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了一种新的锍盐，其具有至少一个与分子中的苯基连接的酸不稳定基团以及正，支链或环状的C 1 -C 20烷基磺酸根阴离子。新型锍盐对于增加曝光和未曝光区域之间的溶解度对比是有效的。暴露后，产生弱酸的烷基磺酸，使PEB步骤中副反应和失活的影响最小化。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

3. 发明授权

US5972559A Chemically amplified positive resist compositions 失效
标题翻译：化学扩增的正性抗蚀剂组合物
公开(公告)号：US5972559A
公开(公告)日：1999-10-26
申请号：US884503
申请日：1997-06-27
申请人： Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura
发明人： Satoshi Watanabe , Katsuya Takemura , Shigehiro Nagura
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A chemically amplified positive resist composition is prepared by blending (A) an organic solvent, (B) a base resin in the form of a polyhydroxystyrene having some hydroxyl groups replaced by acid labile groups and a Mw of 3,000-300,000, (C) a photoacid generator, and (D) an aromatic compound having a group: --R.sup.13 --COOH in a molecule. The resist composition is sensitive to actinic radiation, especially KrF excimer laser and X-ray, has high sensitivity, resolution, and plasma etching resistance, and is effective for improving the footing and PED on nitride substrates.
摘要翻译：通过将（A）有机溶剂，（B）具有由酸不稳定基团取代的一些羟基的聚羟基苯乙烯形式的基础树脂和3,000-300,000的Mw（C）共混制备化学放大正性抗蚀剂组合物光生酸发生剂，（D）分子中具有-R13-COOH基团的芳香族化合物。抗蚀剂组合物对光化辐射敏感，特别是KrF准分子激光和X射线，具有高灵敏度，分辨率和等离子体耐蚀刻性，对于改善氮化物衬底上的基脚和PED是有效的。

4. 发明授权

US5847218A Sulfonium salts and chemically amplified positive resist compositions 失效
标题翻译：锍盐和化学增幅阳性抗蚀剂组合物
公开(公告)号：US5847218A
公开(公告)日：1998-12-08
申请号：US811530
申请日：1997-03-04
申请人： Youichi Ohsawa , Satoshi Watanabe , Junji Shimada , Katsuya Takemura , Shigehiro Nagura , Toshinobu Ishihara
发明人： Youichi Ohsawa , Satoshi Watanabe , Junji Shimada , Katsuya Takemura , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C381/12 , G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027 , C07C211/44
CPC分类号： C07C381/12 , G03F7/0045
摘要： The invention provides a novel sulfonium salt having a substituted or unsubstituted arylsulfonate anion. The novel sulfonium salt minimizes the influence of deactivation by basic compounds not only at a resist surface, but also at a resist-substrate interface, assists a resist to be configured to a definite pattern profile. When the sulfonium salt has an acid labile group, it is effective for increasing the dissolution contrast between exposed and unexposed areas. The sulfonium salt is useful in a chemically amplified positive resist composition which lends itself to fine patterning and features high resolution.
摘要翻译：本发明提供了具有取代或未取代的芳基磺酸根阴离子的新型锍盐。新型锍盐不仅在抗蚀剂表面，而且在抗蚀剂 - 基材界面处，使碱性化合物失活的影响最小化，有助于将抗蚀剂配置成确定的图案轮廓。当锍盐具有酸不稳定基团时，对于增加暴露区域和未暴露区域之间的溶解度对比度是有效的。锍盐可用于化学放大的正性抗蚀剂组合物，其具有精细的图案化并具有高分辨率。

5. 发明授权

US06395446B1 Resist compositions and patterning process 有权
公开(公告)号：US06395446B1
公开(公告)日：2002-05-28
申请号：US09680481
申请日：2000-10-05
申请人： Akihiro Seki , Katsuya Takemura , Youichi Ohsawa , Jun Watanabe , Shigehiro Nagura
发明人： Akihiro Seki , Katsuya Takemura , Youichi Ohsawa , Jun Watanabe , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/168 , Y10S430/106
摘要： A chemical amplification type resist composition contains as a photoacid generator a sulfonyldiazomethane compound of the formula (1): wherein R1 is C1-10 alkyl or C6-14 aryl, R2 is C1-6 alkyl, G is SO2 or CO, R3 is C1-10 alkyl or C6-14 aryl, p is an integer of 0 to 4, q is an integer of 1 to 5, 1≦p+q≦5, n is 1 or 2, m is 0 or 1, and n+m=2. The composition is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized debris after coating, development and peeling, and improved pattern profile after development.

6. 发明授权

US5882844A Chemically amplified positive resist composition 失效
标题翻译：化学放大正光刻胶组合物
公开(公告)号：US5882844A
公开(公告)日：1999-03-16
申请号：US831301
申请日：1997-04-01
申请人： Junji Tsuchiya , Toshinobu Ishihara , Shigehiro Nagura , Katsuya Takemura , Tsuguo Yamaoka
发明人： Junji Tsuchiya , Toshinobu Ishihara , Shigehiro Nagura , Katsuya Takemura , Tsuguo Yamaoka
IPC分类号： G03F7/004 , G03F7/039 , G03F7/075 , H01L21/027 , G03F7/029 , G03F7/032
CPC分类号： G03F7/0757
摘要： A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polysiloxane having phenolic hydroxyl groups some of which are protected with alkoxyalkyl groups and having a weight average molecular weight of 2,000-50,000, (C) a photoacid generator, and (D) a vinyl ether group-containing compound. The composition has high sensitivity to actinic radiation, is developable with aqueous base to form a resist pattern, and lends itself to fine patterning.
摘要翻译：化学放大正性抗蚀剂组合物包含（A）有机溶剂，（B）具有酚羟基的聚硅氧烷形式的基础树脂，其中一些被烷氧基烷基保护并具有2,000-50,000的重均分子量，（C）光致酸产生剂，和（D）含乙烯基醚基的化合物。该组合物对光化辐射具有高灵敏度，可用碱水溶液显影以形成抗蚀剂图案，并使其自身精细图案化。

7. 发明授权

US5814694A Anti-reflective coating composition 失效
标题翻译：防反射涂料组合物
公开(公告)号：US5814694A
公开(公告)日：1998-09-29
申请号：US833052
申请日：1997-04-03
申请人： Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
发明人： Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C08K5/09
CPC分类号： C08K5/09
摘要： A water-soluble coating composition for forming a layer to be placed on the upper surface of a resist is provided without use of Freons. The material includes an aqueous solution containing a) at least one water-soluble polymer selected from the group consisting of poly(N-vinylpyrrolidone) homopolymers and water-soluble copolymers of N-vinylpyrrolidone and other vinyl monomers, b) at least one fluorine-containing organic acid, and c) at least one amino acid derivative. The film formed through use of the material of the invention serves as both an anti-reflective film and a protective film. The material of the present invention provides a number of advantages in the formation of resist patterns, including excellent film-forming properties, excellent dimensional accuracy and aligning accuracy, simple and easy handling, high productivity, and good reproducibility.
摘要翻译：在不使用氟利昂的情况下，提供用于形成被放置在抗蚀剂的上表面上的层的水溶性涂料组合物。该材料包括含有a）至少一种选自聚（N-乙烯基吡咯烷酮）均聚物和N-乙烯基吡咯烷酮和其它乙烯基单体的水溶性共聚物的水溶性聚合物的水溶液，b）至少一种含氟 - 含有机酸，和c）至少一种氨基酸衍生物。通过使用本发明的材料形成的膜既用作抗反射膜又用作保护膜。本发明的材料在形成抗蚀剂图形方面提供了许多优点，包括优异的成膜性能，优异的尺寸精度和对准精度，操作简便且易于操作，生产率高，再现性好。

8. 发明授权

US06818148B1 Resist composition and patterning method 有权
标题翻译：抗蚀剂组成和图案化方法
公开(公告)号：US06818148B1
公开(公告)日：2004-11-16
申请号：US09401490
申请日：1999-09-22
申请人： Satoshi Watanabe , Toyohisa Sakurada , Yoshitaka Yanagi , Shigehiro Nagura , Toshinobu Ishihara
发明人： Satoshi Watanabe , Toyohisa Sakurada , Yoshitaka Yanagi , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C09K1300
CPC分类号： G03F7/0048
摘要： A resist composition is provided comprising a fluorochemical surfactant which functions to reduce the contact angle of a coating of the resist composition with water or an aqueous base developer as the amount of the fluorochemical surfactant increases. The resist composition forms a coating having a thickness uniformity, free of defects, and wettable with an aqueous base developer when applied onto a substrate, and has a good storage stability in that particles do not increase during storage in solution form.
摘要翻译：提供了一种抗蚀剂组合物，其包括含氟化学表面活性剂，其功能是随着含氟表面活性剂的量的增加，抗蚀剂组合物的涂层与水或碱性显影剂水溶液的接触角降低。抗蚀剂组合物形成具有厚度均匀性，无缺陷的涂层，并且当涂覆在基材上时可用基础显影剂水溶液润湿，并且具有良好的储存稳定性，因为在溶液形式储存期间颗粒不增加。

9. 发明授权

US06605408B2 Resist composition and patterning process 有权
公开(公告)号：US06605408B2
公开(公告)日：2003-08-12
申请号：US09832919
申请日：2001-04-12
申请人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
发明人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
IPC分类号： C08F200
CPC分类号： G03F7/0395 , C08G61/06 , C08G61/08 , G03F7/0397
摘要： A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

10. 发明授权

US06440634B1 Onium salts, photoacid generators for resist compositions, resist compositions, and patterning process 有权
标题翻译：用于抗蚀剂组合物的鎓盐，光酸产生剂，抗蚀剂组合物和图案化方法
公开(公告)号：US06440634B1
公开(公告)日：2002-08-27
申请号：US09637363
申请日：2000-08-15
申请人： Youichi Ohsawa , Jun Watanabe , Wataru Kusaki , Satoshi Watanabe , Takeshi Nagata , Shigehiro Nagura
发明人： Youichi Ohsawa , Jun Watanabe , Wataru Kusaki , Satoshi Watanabe , Takeshi Nagata , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： C07C309/73 , C07C309/71 , C07C381/12 , C07C2602/42 , G03F7/0045 , G03F7/039 , Y10S430/115 , Y10S430/122
摘要： Onium salts of the formula (1) are novel. R1 is C1-10 alkyl or C6-14 aryl, R2 is H or C1-6 alkyl, p is an integer of 1 to 5, q is an integer of 0 to 4, p+q=5, R3 is C1-10 alkyl or C6-14 aryl, M is a sulfur or iodine atom, and “a” is equal to 3 or 2. A chemical amplification type resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and stripping, and improved pattern profile after development.
摘要翻译：式（1）的鎓盐是新的，R 1是C 1-10烷基或C 6-14芳基，R 2是H或C 1-6烷基，p是1至5的整数，q是0至4的整数， p + q = 5，R3是C1-10烷基或C6-14芳基，M是硫或碘原子，“a”等于3或2.包含鎓盐作为光酸的化学放大型抗蚀剂组合物发生器适用于微细加工，特别是通过深紫外光刻，因为许多优点，包括改进的分辨率，最小化线宽变化或形状退化，即使长期PED，最小化涂层后的缺陷，显影和剥离，以及改进的图案轮廓。

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