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1. 发明授权

US06605408B2 Resist composition and patterning process 有权
公开(公告)号：US06605408B2
公开(公告)日：2003-08-12
申请号：US09832919
申请日：2001-04-12
申请人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
发明人： Tsunehiro Nishi , Takeshi Kinsho , Shigehiro Nagura , Tomohiro Kobayashi , Satoshi Watanabe
IPC分类号： C08F200
CPC分类号： G03F7/0395 , C08G61/06 , C08G61/08 , G03F7/0397
摘要： A hydrogenated product of a ring-opening metathesis polymer comprising structural units as shown below has improved heat resistance, pyrolysis resistance and light transmission and is suited as a photoresist for semiconductor microfabrication using UV or deep-UV. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation and has excellent sensitivity, resolution, and etching resistance.

2. 发明授权

US06830866B2 Resist composition and patterning process 有权
标题翻译：抗蚀剂组成和图案化工艺
公开(公告)号：US06830866B2
公开(公告)日：2004-12-14
申请号：US10170345
申请日：2002-06-14
申请人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tomohiro Kobayashi , Tsunehiro Nishi , Satoshi Watanabe , Takeshi Kinsho , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7038
CPC分类号： G03F7/0392 , C08G61/06 , G03F7/0395 , G03F7/0397
摘要： A resist composition comprising a hydrogenated product of ring-opening metathesis polymer and a poly(meth)acrylic acid derivative as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, and etch resistance, and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：包含开环易位聚合物和聚（甲基）丙烯酸衍生物作为基础树脂的氢化产物的抗蚀剂组合物对高能辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于微图案化电子束或深紫外线。

3. 发明授权

US06703183B2 Polymer, resist composition and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US06703183B2
公开(公告)日：2004-03-09
申请号：US10241530
申请日：2002-09-12
申请人： Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Satoshi Watanabe , Shigehiro Nagura
发明人： Tsunehiro Nishi , Takeshi Kinsho , Koji Hasegawa , Satoshi Watanabe , Shigehiro Nagura
IPC分类号： G03F7004
CPC分类号： C08F220/18 , G03F7/0397
摘要： A polymer comprising recurring units of formulae (1) and (2) wherein R1 and R3 are H or methyl, R2 and R4 are C1-15 alkyl, R5 to R8 are H, or R5 and R7, and R6 and R8 form trimethylene or 1,3-cyclopentylene and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.
摘要翻译：包含式（1）和（2）的重复单元的聚合物，其中R 1和R 3为H或甲基，R 2和R 4为C 1-15烷基，R 5为R 新颖的是H或R 5和R 7，并且R 6和R 8形成三亚甲基或1,3-亚环戊基并具有1,000-500,000的Mw。包含作为基础树脂的聚合物的抗蚀剂组合物对高能量辐射敏感，具有优异的灵敏度，分辨率和耐蚀刻性，并且适用于电子束或深紫外线的微图案化。

4. 发明授权

US6030746A Di- and triphenyl monoterpene hydrocarbon derivatives, dissolution inhibitors, and chemically amplified positive resist compositions 失效
标题翻译：二苯基和三苯基单萜烃衍生物，溶解抑制剂和化学增强正性抗蚀剂组合物
公开(公告)号：US6030746A
公开(公告)日：2000-02-29
申请号：US831749
申请日：1997-04-01
申请人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
发明人： Takeshi Nagata , Satoshi Watanabe , Tsunehiro Nishi , Jun Hatakeyama , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C07C43/205 , C07C43/30 , C07C43/303 , C07C43/315 , C07C43/32 , C07C69/28 , C07C69/30 , C07C69/712 , C07C69/96 , C07F7/06 , C07F7/08 , C07F7/18 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C07C43/303 , C07C69/96 , G03F7/0045 , C07C2101/14 , G03F7/039 , Y10S430/118
摘要： Di- or triphenyl monoterpene hydrocarbon derivatives of formula (1) are novel. ##STR1## X is a di- or trivalent monoterpene hydrocarbon group, R.sup.1 to R.sup.3 are hydrogen or an alkyl, alkoxy, alkoxyalkyl, alkenyl or aryl group, R.sup.4 is hydrogen or an acid labile group, at least one R.sup.4 being an acid labile group, letter n is an integer of 1-5, j, k and m are integers of 0-4, n+j+k+m=5, and p is 2 or 3. When used as a dissolution rate regulator, the compound of formula (1) exerts remarkably enhanced dissolution inhibitory effect and minimized light absorption in the deep-UV region. A chemically amplified positive resist composition having the compound of formula (1) blended therein is highly sensitive to actinic radiation such as deep-UV radiation, electron beam and X-ray, especially KrF excimer laser light, and has improved sensitivity, resolution and plasma etching resistance.
摘要翻译：式（1）的二 - 或三苯基单萜烃衍生物是新颖的。 X是二价或三价单萜烃基，R 1至R 3是氢或烷基，烷氧基，烷氧基烷基，烯基或芳基，R 4是氢或酸不稳定基团，至少一个R 4是酸不稳定基团，字母n 是1-5的整数，j，k和m是0-4，n + j + k + m = 5的整数，p是2或3.当用作溶出速率调节剂时，式 1）在深紫外区域发挥显着增强的溶解抑制作用和最小化的光吸收。具有其中混合的式（1）化合物的化学放大正性抗蚀剂组合物对光化辐射如深UV辐射，电子束和X射线，特别是KrF准分子激光具有高度敏感性，并且具有改善的灵敏度，分辨率和等离子体耐腐蚀性。

5. 发明授权

US5856561A Bisphenol carboxylic acid tertiary ester derivatives and chemically amplified positive resist compositions 失效
标题翻译：双酚羧酸叔酯衍生物和化学放大正型抗蚀剂组合物
公开(公告)号：US5856561A
公开(公告)日：1999-01-05
申请号：US710298
申请日：1996-09-17
申请人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
发明人： Takesi Nagata , Satoshi Watanabe , Katsuya Takemura , Tsunehiro Nishi , Shigehiro Nagura , Akinobu Tanaka , Yoshio Kawai
IPC分类号： G03F7/004 , C07C69/734 , C08F12/00 , C08F12/22 , C08K5/10 , C08K5/107 , C08L25/00 , C08L25/08 , C08L25/18 , G03F7/039 , H01L21/027 , C07C69/76
CPC分类号： C07C69/734
摘要： Novel bisphenol carboxylic acid tertiary ester derivatives having two aromatic ether groups and an ester group which are all replaced by acid labile groups are provided. The derivatives are used as a dissolution inhibitor in a chemically amplified positive resist composition comprising an organic solvent, an alkali soluble resin, and a photo-acid generator. Since the dissolution inhibitor has a highly reactive acetal group as an acid labile group, its coupling-off rapidly takes place after exposure. The dissolution inhibitor itself is less alkali soluble and its acid decomposition product is a phenol derivative having a carboxylic acid group with high alkali solubility, leading to a high dissolution contrast.
摘要翻译：提供了具有两个芳族醚基团和酯基的新的双酚羧酸叔酯衍生物，它们均被酸不稳定基团所取代。该衍生物在包含有机溶剂，碱溶性树脂和光酸发生剂的化学放大型正性抗蚀剂组合物中用作溶解抑制剂。由于溶解抑制剂具有作为酸不稳定基团的高反应性缩醛基团，因此其暴露后快速发生偶联。溶解抑制剂本身的碱溶性较小，其酸分解产物是具有高碱溶性的羧酸基的苯酚衍生物，导致高的溶解对比度。

6. 发明授权

US6027854A Polymers chemically amplified positive resist compositions, and patterning method 失效
标题翻译：聚合物化学放大正性抗蚀剂组合物和图案化方法
公开(公告)号：US6027854A
公开(公告)日：2000-02-22
申请号：US31560
申请日：1998-02-27
申请人： Tsunehiro Nishi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
发明人： Tsunehiro Nishi , Osamu Watanabe , Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/106
摘要： A polymer comprising recurring units of formula (1) is provided wherein some hydrogen atoms of phenolic hydroxyl groups and/or alcoholic hydroxyl groups and/or carboxyl groups are replaced by acid labile groups. The polymer is crosslinked with a crosslinking group having a C--O--C linkage resulting from reaction of some of the remaining alcoholic hydroxyl groups and/or carboxyl groups with an alkenyl ether compound or halogenated alkyl ether compound. The amount of the acid labile group and the crosslinking group combined is on the average from more than 0 mol % to 80 mol % of the entirety of the phenolic hydroxyl group, alcoholic hydroxyl group and carboxyl group. The polymer has Mw of 1,000-500,000. ##STR1## R.sup.1 is H or methyl, R.sup.2 is C.sub.1 -C.sub.8 alkyl, R.sup.3 is a divalent C.sub.1 -C.sub.18 hydrocarbon group which may have a hetero atom, R.sup.4 and R.sup.5 are H or monovalent C.sub.1 -C.sub.18 hydrocarbon groups which may have a hetero atom, x and y are integers satisfying x+y.ltoreq.5, x', y' and z' are integers satisfying x'+y'+z'.ltoreq.5, p, q and r are numbers satisfying 0.ltoreq.p.ltoreq.0.4, 0.ltoreq.q.ltoreq.0.4, 0.01.ltoreq.p+q.ltoreq.0.8, and p+q+r=1. A chemically amplified positive resist composition comprising the polymer as a base resin has high sensitivity, high resolution, a wide latitude of exposure, and process adaptability and forms resist patterns having plasma etching resistance and heat resistance.
摘要翻译：提供了包含式（1）的重复单元的聚合物，其中酚羟基和/或醇羟基和/或羧基的一些氢原子被酸不稳定基团取代。聚合物与由一些残留的醇羟基和/或羧基与链烯基醚化合物或卤代烷基醚化合物的反应产生的具有C-O-C键的交联基团交联。酸不稳定基团和交联基团的结合量平均为全部酚羟基，醇羟基和羧基的0摩尔％至80摩尔％以上。聚合物的Mw为1,000-500,000。 R1是H或甲基，R2是C1-C8烷基，R3是可以具有杂原子的二价C1-C18烃基，R4和R5是H或可以具有杂原子的一价C1-C18烃基，x和 y是满足x + y <5的整数，x'，y'和z'是满足x'+ y'+ z'= 5的整数，p，q和r是满足0

7. 发明授权

US07090961B2 Photo acid generator, chemical amplification resist material and pattern formation method 有权
公开(公告)号：US07090961B2
公开(公告)日：2006-08-15
申请号：US10424269
申请日：2003-04-28
申请人： Tomohiro Kobayashi , Satoshi Watanabe , Tsunehiro Nishi , Youichi Ohsawa , Katsuhiro Kobayashi
发明人： Tomohiro Kobayashi , Satoshi Watanabe , Tsunehiro Nishi , Youichi Ohsawa , Katsuhiro Kobayashi
IPC分类号： G03F7/004 , G03F7/039 , C07D327/06
CPC分类号： G03F7/0045 , C07D327/06 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

8. 发明授权

US07211367B2 Photo acid generator, chemical amplification resist material 有权
标题翻译：照片酸发生器，化学放大抗蚀材料
公开(公告)号：US07211367B2
公开(公告)日：2007-05-01
申请号：US11373925
申请日：2006-03-13
申请人： Tomohiro Kobayashi , Satoshi Watanabe , Tsunehiro Nishi , Youichi Ohsawa , Katsuhiro Kobayashi
发明人： Tomohiro Kobayashi , Satoshi Watanabe , Tsunehiro Nishi , Youichi Ohsawa , Katsuhiro Kobayashi
IPC分类号： G03F7/031
CPC分类号： G03F7/0045 , C07D327/06 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer
摘要翻译：提供了包含酸产生器的高分辨率抗蚀剂材料，从而获得了300nm以下的高能量射线的高灵敏度和高分辨率，小的线边缘粗糙度，以及热稳定性和储存稳定性方面的优异性。此外，提供了使用该抗蚀剂材料的图案形成方法。具体地，下述通式（1）的新化合物; 以及优选含有该化合物作为光酸发生剂的正性抗蚀剂材料和基础树脂; 被提供。该正性抗蚀剂材料可含有碱性化合物或溶解抑制剂。此外，本发明提供了一种图案形成方法，包括以下步骤：将该正性抗蚀剂材料涂布在基板上，然后对该材料进行热处理，通过照片将经处理的材料暴露于波长为300nm以下的高能量射线掩模，任选地热处理暴露的材料，以及使用显影剂显影材料

9. 发明申请

US20060160023A1 Photo acid generator, chemical amplification resist material and pattern formation method 有权
公开(公告)号：US20060160023A1
公开(公告)日：2006-07-20
申请号：US11373925
申请日：2006-03-13
申请人： Tomohiro Kobayashi , Satoshi Watanabe , Tsunehiro Nishi , Youichi Ohsawa , Katsuhiro Kobayashi
发明人： Tomohiro Kobayashi , Satoshi Watanabe , Tsunehiro Nishi , Youichi Ohsawa , Katsuhiro Kobayashi
IPC分类号： G03C1/76
CPC分类号： G03F7/0045 , C07D327/06 , G03F7/0395 , G03F7/0397 , G03F7/0758
摘要： A high resolution resist material comprising an acid generator is provided so that high sensitivity and high resolution for high energy rays of 300 nm or less, small line-edge roughness, and excellence in heat stability and storage stability are obtained. Moreover, a pattern formation method using this resist material are provided. Specifically, a novel compound of the following general formula (1); and a positive resist material comprising this compound preferably as a photo acid generator, and a base resin; are provided. This positive resist material may contain a basic compound or a dissolution inhibitor. Further, the present invention provides a pattern formation method comprising the steps of applying this positive resist material on a substrate, then heat-treating the material, exposing the treated material to a high energy ray having a wavelength of 300 nm or less via a photo mask, optionally heat-treating the exposed material, and developing the material using a developer.

10. 发明授权

US5814694A Anti-reflective coating composition 失效
标题翻译：防反射涂料组合物
公开(公告)号：US5814694A
公开(公告)日：1998-09-29
申请号：US833052
申请日：1997-04-03
申请人： Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
发明人： Satoshi Watanabe , Shigehiro Nagura , Toshinobu Ishihara
IPC分类号： C08K5/09
CPC分类号： C08K5/09
摘要： A water-soluble coating composition for forming a layer to be placed on the upper surface of a resist is provided without use of Freons. The material includes an aqueous solution containing a) at least one water-soluble polymer selected from the group consisting of poly(N-vinylpyrrolidone) homopolymers and water-soluble copolymers of N-vinylpyrrolidone and other vinyl monomers, b) at least one fluorine-containing organic acid, and c) at least one amino acid derivative. The film formed through use of the material of the invention serves as both an anti-reflective film and a protective film. The material of the present invention provides a number of advantages in the formation of resist patterns, including excellent film-forming properties, excellent dimensional accuracy and aligning accuracy, simple and easy handling, high productivity, and good reproducibility.
摘要翻译：在不使用氟利昂的情况下，提供用于形成被放置在抗蚀剂的上表面上的层的水溶性涂料组合物。该材料包括含有a）至少一种选自聚（N-乙烯基吡咯烷酮）均聚物和N-乙烯基吡咯烷酮和其它乙烯基单体的水溶性共聚物的水溶性聚合物的水溶液，b）至少一种含氟 - 含有机酸，和c）至少一种氨基酸衍生物。通过使用本发明的材料形成的膜既用作抗反射膜又用作保护膜。本发明的材料在形成抗蚀剂图形方面提供了许多优点，包括优异的成膜性能，优异的尺寸精度和对准精度，操作简便且易于操作，生产率高，再现性好。

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