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1. 发明授权

US6057937A Image reading apparatus 失效
标题翻译：图像读取装置
公开(公告)号：US6057937A
公开(公告)日：2000-05-02
申请号：US825221
申请日：1997-03-27
申请人： Satoshi Shimizu , Hitoshi Inoue , Akio Saigusa
发明人： Satoshi Shimizu , Hitoshi Inoue , Akio Saigusa
IPC分类号： H04N1/19 , G06T1/00 , H04N1/00 , H04N1/04 , H04N1/40 , H04N1/21 , G03G15/00
CPC分类号： H04N1/0071 , H04N1/00681 , H04N1/00732 , H04N1/0402 , H04N1/0405 , H04N2201/0408
摘要： An image reading apparatus for reading images on films of different sizes and outputting read image data includes a film sensor for sensing the dimension of at least one side of each film and a control module for operating the apparatus so that at least one of the reading process and outputting process is performed under a parameter setting set beforehand in accordance with a signal from the film sensor. When a reading start instruction is issued from a control panel, a film width detecting circuit performs film sensing, thereby determining the film width of each film. Based on the film width, reading parameter values such as a pixel pitch, a density range, and a data transfer destination are selected from among those that are beforehand set through the control panel. Table update is made for a density linear conversion table according to the film width and an interpolation coefficient according to the pixel pitch. Each film is read through a halogen driving circuit and an actuator driving circuit, and the image data is output through an image data reading circuit.
摘要翻译：一种用于读取不同尺寸的胶片上的图像并输出读取图像数据的图像读取装置包括用于感测每个胶片的至少一个侧面的尺寸的胶片传感器和用于操作该装置的控制模块，使得读取过程中的至少一个并且根据来自胶片传感器的信号预先设置的参数设置来执行输出处理。当从控制面板发出读取开始指令时，胶片宽度检测电路执行胶片检测，从而确定每个胶片的胶片宽度。基于胶片宽度，从通过控制面板预先设定的那些中选择读取参数值，例如像素间距，浓度范围和数据传送目的地。根据胶片宽度和根据像素间距的内插系数，对密度线性转换表进行表格更新。通过卤素驱动电路和致动器驱动电路读取每个胶片，并且通过图像数据读取电路输出图像数据。

2. 发明授权

US07289146B2 Solid state image pickup device 有权
标题翻译：固态图像拾取装置
公开(公告)号：US07289146B2
公开(公告)日：2007-10-30
申请号：US10766461
申请日：2004-01-27
申请人： Akio Saigusa , Satoshi Shimizu
发明人： Akio Saigusa , Satoshi Shimizu
IPC分类号： H04N9/64
CPC分类号： H04N5/359 , H04N1/1008 , H04N1/193 , H04N2201/0079 , H04N2201/0412
摘要： In an image reading apparatus using a solid state image pickup element, a smear amount and the total received light amount at whole image taking region of the CCD linear sensor when a light source is turned on without film, are measured and calculated.Using a ratio of the total received light amount when a light source is turned on without film to the one at the time of image reading, a smear correction data of each line is calculated for correction processing.
摘要翻译：在使用固体摄像元件的图像读取装置中，测定并计算光源未被膜接通时CCD线性传感器的整个摄像区域的总体接收光量。当光源在没有胶片的情况下打开时，使用总的接收光量的比例与图像读取时的总接收光量的比率，计算每行的涂片校正数据，以进行校正处理。

3. 发明授权

US09789861B2 Braking force control system for vehicle 有权
公开(公告)号：US09789861B2
公开(公告)日：2017-10-17
申请号：US14232156
申请日：2012-07-13
申请人： Satoshi Shimizu
发明人： Satoshi Shimizu
IPC分类号： B60T8/24 , B60T8/1764 , B60T8/26
CPC分类号： B60T8/246 , B60T8/1764 , B60T8/26
摘要： In a braking force control system for a vehicle having a braking system capable of controlling braking force of each of right and left front wheels and right and left rear wheels independently of one another, when anti-skid control starts being performed on one of the front wheels while the vehicle is running on a road having different coefficients of friction on the left side and right side thereof, increase of the braking force of the other front wheel laterally opposite to the above-indicated one front wheel is suppressed, and increase of the braking force of at least one of the right and left rear wheels is suppressed.

4. 发明授权

US09245659B2 X-ray imaging apparatus 有权
公开(公告)号：US09245659B2
公开(公告)日：2016-01-26
申请号：US13937268
申请日：2013-07-09
申请人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
发明人： Osamu Tsujii , Makoto Sato , Masahiko Okunuki , Satoshi Shimizu , Takashi Ogura
IPC分类号： G21K1/04 , A61B6/06 , A61B6/00
CPC分类号： G21K1/04 , A61B6/06 , A61B6/4007 , A61B6/4405 , A61B6/4441 , A61B6/587 , G21K1/046 , H01J2235/068
摘要： An X-ray imaging apparatus is provided with a multi X-ray source and a collimator in which a plurality of slits for X-rays to pass through are two-dimensionally formed, the size and position of the slits being adjustable. A control unit, as a first control mode, controls the size and position of the slits to move an examination region in parallel, when an X-ray source is changed to a different X-ray source, such that the examination directions are parallel before and after the change. Also, the control unit, as a second control mode, controls the size and position of the slits to rotate the examination direction, when an X-ray source is changed to a different X-ray source, such that the center of the examination regions is the same before and after the change.

5. 发明申请

US20130240714A1 OPTICAL SENSOR, LENS MODULE, AND CAMERA MODULE 有权
标题翻译：光学传感器，镜头模块和摄像机模块
公开(公告)号：US20130240714A1
公开(公告)日：2013-09-19
申请号：US13814699
申请日：2011-08-11
申请人： Yoshihito Higashitsutsumi , Satoshi Shimizu , Isaya Kitamura , Masami Suzuki
发明人： Yoshihito Higashitsutsumi , Satoshi Shimizu , Isaya Kitamura , Masami Suzuki
IPC分类号： H01L27/146
CPC分类号： H01L27/14601 , G02B5/201 , H01L27/14618 , H01L27/14621 , H01L27/14625 , H01L2924/0002 , H04N1/00307 , H04N5/2253 , H04N5/2254 , H04N5/2257 , H04N9/04 , H04N9/07 , H01L2924/00
摘要： An optical sensor is described herein. By way of example, the optical sensor comprises a first light filter on a first light-receiving surface of an image sensor, and a second light filter on a second light-receiving surface of the image sensor. The second light-receiving surface is on an opposite side of the image sensor from the first light-receiving surface. The characteristics of the first light filter are different than characteristics of the second light filter.
摘要翻译：本文描述了光学传感器。作为示例，光学传感器包括在图像传感器的第一光接收表面上的第一滤光器和在图像传感器的第二光接收表面上的第二滤光器。第二光接收表面在图像传感器的与第一光接收表面相反的一侧。第一滤光器的特性与第二滤光器的特性不同。

6. 发明申请

US20130053341A1 THERAPEUTIC COMPOUNDS AND RELATED METHODS OF USE 有权
标题翻译：治疗化合物及其相关使用方法
公开(公告)号：US20130053341A1
公开(公告)日：2013-02-28
申请号：US13520018
申请日：2010-12-30
申请人： Masaki Suzuki , Kazumi Kondo , Muneaki Kurimura , Krishna Reddy Valluru , Akira Takahashi , Takeshi Kuroda , Haruka Takahashi , Tae Fukushima , Shin Miyamura , Indranath Ghosh , Abhishek Dogra , Geraldine Harriman , Amy Elder , Satoshi Shimizu , Kevin J. Hodgetts , Jason S. Newcom
发明人： Masaki Suzuki , Kazumi Kondo , Muneaki Kurimura , Krishna Reddy Valluru , Akira Takahashi , Takeshi Kuroda , Haruka Takahashi , Tae Fukushima , Shin Miyamura , Indranath Ghosh , Abhishek Dogra , Geraldine Harriman , Amy Elder , Satoshi Shimizu , Kevin J. Hodgetts , Jason S. Newcom
IPC分类号： A61K31/517 , C07D413/14 , A61K31/5377 , A61K31/538 , C07D417/14 , A61K31/541 , A61K31/695 , A61P25/00 , A61P25/18 , A61P25/28 , A61K31/496 , A61K31/5513 , A61K31/519 , A61K31/554 , A61K31/5415 , C07D401/04
CPC分类号： C07D401/04 , A61K31/517 , A61K45/06 , C07D401/14 , C07D403/04 , C07D405/14 , C07D409/14 , C07D413/14 , C07D417/14 , C07D487/04 , C07D495/04
摘要： Methods of treating disorders using compounds that modulate striatal-enriched tyrosine phosphatase (STEP) are de-scribed herein. Exemplary disorders include schizophrenia and cognitive deficit.
摘要翻译：本文描述了使用调节纹状体富含酪氨酸磷酸酶（STEP）的化合物治疗病症的方法。示例性疾病包括精神分裂症和认知缺陷。

7. 发明授权

US08349840B2 Piperazine-substituted benzothiophenes for treatment of mental disorders 有权
公开(公告)号：US08349840B2
公开(公告)日：2013-01-08
申请号：US12970690
申请日：2010-12-16
申请人： Hiroshi Yamashita , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Hideaki Kuroda , Haruka Takahashi , Satoshi Shimizu , Tatsuyoshi Tanaka
发明人： Hiroshi Yamashita , Nobuaki Ito , Shin Miyamura , Kunio Oshima , Jun Matsubara , Hideaki Kuroda , Haruka Takahashi , Satoshi Shimizu , Tatsuyoshi Tanaka
IPC分类号： A61K31/496
CPC分类号： A61K31/496 , C07D405/12 , C07D409/12 , C07D409/14
摘要： The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety.

8. 发明授权

US08339862B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08339862B2
公开(公告)日：2012-12-25
申请号：US12343552
申请日：2008-12-24
申请人： Natsuo Aiika , Shoii Shukuri , Satoshi Shimizu , Taku Ogura
发明人： Natsuo Aiika , Shoii Shukuri , Satoshi Shimizu , Taku Ogura
IPC分类号： G11C16/06 , G11C11/34 , H01L29/792
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/12 , H01L27/115 , H01L27/11524
摘要： According to an aspect of the present invention, it is provided: a nonvolatile semiconductor memory device comprising: a plurality of bit lines arranged in a first direction; a plurality of source lines arranged in the first direction, the plurality of source lines being parallel to the plurality of bit lines, the plurality of source lines being distinct from the plurality of bit lines; a plurality of memory gate lines arranged in a second direction perpendicular to the first direction; a plurality of memory cells arranged in a matrix, each of the plurality of memory cells including a p type MIS nonvolatile transistor having a first terminal, a second terminal, a channel between the first terminal and the second terminal, a gate insulation film formed on the channel, a gate electrode connected to one corresponding memory gate line of the plurality of memory gate lines, and a carrier storage layer formed between the gate insulation film and the gate electrode, the first terminal being connected to one corresponding bit line of the plurality of bit lines and the second terminal being connected to one corresponding source line of the plurality of source lines.
摘要翻译：根据本发明的一个方面，提供一种非易失性半导体存储器件，包括：沿第一方向布置的多个位线; 沿所述第一方向布置的多条源极线，所述多条源极线与所述多个位线平行，所述多个源极线与所述多个位线不同; 沿垂直于第一方向的第二方向布置的多个存储栅极线; 多个存储单元，以矩阵形式布置，所述多个存储单元中的每一个包括具有第一端子，第二端子，第一端子和第二端子之间的通道的ap型MIS非易失性晶体管，形成在栅极绝缘膜上的栅极绝缘膜连接到所述多个存储栅极线中的一个对应的存储栅极线的栅极，以及形成在所述栅极绝缘膜和所述栅电极之间的载流子存储层，所述第一端子连接到所述多个栅极线中的一个相应的位线位线，并且所述第二端子连接到所述多个源极线中的一个对应的源极线。

9. 发明授权

US08106443B2 Non-volatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08106443B2
公开(公告)日：2012-01-31
申请号：US12246193
申请日：2008-10-06
申请人： Natsuo Ajika , Shoji Shukuri , Satoshi Shimizu , Taku Ogura
发明人： Natsuo Ajika , Shoji Shukuri , Satoshi Shimizu , Taku Ogura
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L27/11568 , G11C16/0441 , G11C16/0491 , H01L21/26586 , H01L29/792
摘要： A non-volatile semiconductor device includes an n type well formed in a semiconductor substrate having a surface, the surface having a plurality of stripe shaped grooves and a plurality of stripe shaped ribs, a plurality of stripe shaped p type diffusion regions formed in upper parts of each of the plurality of ribs, the plurality of stripe shaped p type diffusion regions being parallel to a longitudinal direction of the ribs, a tunneling insulation film formed on the grooves and the ribs, a charge storage layer formed on the tunneling insulating film, a gate insulation film formed on the charge storage layer, and a plurality of stripe shaped conductors formed on the gate insulating film, the plurality of stripe shaped conductors arranged in a direction intersecting the longitudinal direction of the ribs with a predetermined interval wherein an impurity diffusion structure in the ribs are asymmetric.
摘要翻译：非易失性半导体器件包括在具有表面的半导体衬底中形成的n型阱，表面具有多个条形槽和多个条状肋，多个条形p型扩散区形成在上部所述多个条状p型扩散区域与所述肋的长度方向平行，形成在所述槽和所述肋上的隧道绝缘膜，形成在所述隧道绝缘膜上的电荷存储层，形成在电荷存储层上的栅极绝缘膜和形成在栅极绝缘膜上的多个条状导体，所述多个条状导体沿着与肋的纵向相交的方向以预定间隔布置，其中杂质扩散肋骨中的结构是不对称的。

10. 发明授权

US08084343B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08084343B2
公开(公告)日：2011-12-27
申请号：US12977573
申请日：2010-12-23
申请人： Tadashi Yamaguchi , Koyu Asai , Mahito Sawada , Kiyoteru Kobayashi , Tatsunori Murata , Satoshi Shimizu
发明人： Tadashi Yamaguchi , Koyu Asai , Mahito Sawada , Kiyoteru Kobayashi , Tatsunori Murata , Satoshi Shimizu
IPC分类号： H01L21/20
CPC分类号： H01L21/76802 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76837 , H01L23/53295 , H01L23/564 , H01L2924/0002 , H01L2924/13091 , H01L2924/00
摘要： In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.
摘要翻译：为了阻止通过HDP-CVD等形成层间绝缘膜时产生的氢离子，从而抑制氢离子对器件的不利影响，在包括接触层，金属互连和层间绝缘的半导体器件中在其上形成有栅电极的半导体衬底上，通过使用含氢原子的气体的偏压施加等离子体CVD在金属互连上形成层间绝缘膜，并且在金属互连的底层设置氮氧化硅膜，层间绝缘膜。

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