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1. 发明申请

US20120261799A1 SEMICONDUCTOR DEVICE AND RADIO COMMUNICATION DEVICE 有权
标题翻译：半导体器件和无线电通信设备
公开(公告)号：US20120261799A1
公开(公告)日：2012-10-18
申请号：US13538121
申请日：2012-06-29
申请人： Satoshi SASAKI , Yasunari UMEMOTO , Yasuo OSONE , Tsutomu KOBORI , Chushiro KUSANO , Isao OHBU , Kenji SASAKI
发明人： Satoshi SASAKI , Yasunari UMEMOTO , Yasuo OSONE , Tsutomu KOBORI , Chushiro KUSANO , Isao OHBU , Kenji SASAKI
IPC分类号： H01L27/04
CPC分类号： H01L29/7304 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/042 , H01L27/0605 , H01L27/067 , H01L28/40 , H01L29/0808 , H01L29/7371 , H01L2223/6627 , H01L2223/6644 , H01L2224/05553 , H01L2224/05554 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48137 , H01L2224/48227 , H01L2224/48235 , H01L2224/49113 , H01L2224/49171 , H01L2224/73265 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/0102 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01032 , H01L2924/01033 , H01L2924/01037 , H01L2924/01041 , H01L2924/01042 , H01L2924/01049 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/13091 , H01L2924/14 , H01L2924/1423 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30105 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099
摘要： A technology which allows a reduction in the thermal resistance of a semiconductor device used in a radio communication device, and the miniaturization thereof is provided. For example, the semiconductor device can include a plurality of unit transistors Q, transistor formation regions 3a, 3b, and 3e each having a first number (e.g., seven) of the unit transistors Q, and transistor formation regions 3c and 3d each having a second number (e.g., four) of the unit transistors Q. The transistor formation regions 3c and 3d are located between the transistor formation regions 3a, 3b, 3e, and 3f, and the first number is larger than the second number.
摘要翻译：提供了允许降低无线电通信装置中使用的半导体装置的热阻的技术及其小型化。例如，半导体器件可以包括多个单位晶体管Q，具有单位晶体管Q的第一数量（例如7个）的晶体管形成区域3a，3b和3e以及每个具有单位晶体管Q的晶体管形成区域3c和3d 晶体管形成区域3c和3d位于晶体管形成区域3a，3b，3e和3f之间，第一数量大于第二数量。

2. 发明申请

US20080224174A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080224174A1
公开(公告)日：2008-09-18
申请号：US11962169
申请日：2007-12-21
申请人： Kenji SASAKI , Ikuro Akazawa , Yoshinori Imamura , Atsushi Kurokawa , Tatsuhiko Ikeda , Hiroshi Inagawa , Yasunari Umemoto , Isao Obu
发明人： Kenji SASAKI , Ikuro Akazawa , Yoshinori Imamura , Atsushi Kurokawa , Tatsuhiko Ikeda , Hiroshi Inagawa , Yasunari Umemoto , Isao Obu
IPC分类号： H01L27/082 , H01L21/331
CPC分类号： H01L21/8252 , H01L23/481 , H01L23/66 , H01L24/03 , H01L24/05 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L27/0605 , H01L29/0619 , H01L29/7371 , H01L29/7811 , H01L2224/04042 , H01L2224/05553 , H01L2224/05556 , H01L2224/05599 , H01L2224/29339 , H01L2224/32225 , H01L2224/45099 , H01L2224/451 , H01L2224/45117 , H01L2224/45144 , H01L2224/45155 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48599 , H01L2224/49171 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01078 , H01L2924/01079 , H01L2924/05042 , H01L2924/10158 , H01L2924/10329 , H01L2924/10336 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/30107 , H01L2924/01032 , H01L2924/00 , H01L2924/3512 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A technology which allows an improvement in the moisture resistance of a semiconductor device is provided. In a GaAs substrate as a semi-insulating substrate, a HBT is formed in an element formation region, while an isolation region is formed in an insulating region. The isolation region formed in the insulating region is formed by introducing helium into the same semiconductor layers as the sub-collector semiconductor layer and collector semiconductor layer of the HBT. In an outer peripheral region, a conductive layer is formed to be exposed from protective films and coupled to a back surface electrode. Because a GND potential is supplied to the back surface electrode, the conductive layer is fixed to the GND potential. The conductive layer is formed of the same semiconductor layers as the sub-collector semiconductor layer and collector semiconductor layer of the HBT.
摘要翻译：提供了允许提高半导体器件的耐湿性的技术。在作为半绝缘基板的GaAs衬底中，在元件形成区域中形成HBT，而在绝缘区域中形成隔离区域。形成在绝缘区域中的隔离区域通过将氦引入与HBT的子集电极半导体层和集电极半导体层相同的半导体层中而形成。在外围区域中，形成导电层以从保护膜露出并耦合到背面电极。由于将GND电位提供给背面电极，所以导电层固定为GND电位。导电层由与HBT的副集电极半导体层和集电极半导体层相同的半导体层形成。

3. 发明申请

US20120199904A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120199904A1
公开(公告)日：2012-08-09
申请号：US13359098
申请日：2012-01-26
申请人： Kenji SASAKI
发明人： Kenji SASAKI
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66659 , H01L29/0653 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： A field drain insulating part has a first insulating film and a high dielectric constant insulating film. The first insulating film is positioned at least in the center of the field drain insulating part in a plan view. The high dielectric constant insulating film is positioned at a part close to a drain region in the edge of the bottom surface of the field drain insulating part, and has a higher dielectric constant than the first insulating film. The high dielectric constant insulating film is not positioned in the center of the field drain insulating part in a plan view.
摘要翻译：场漏绝缘部分具有第一绝缘膜和高介电常数绝缘膜。第一绝缘膜在俯视图中至少位于场漏绝缘部的中心。高介电常数绝缘膜位于漏极绝缘部的底面的边缘的漏极区附近，并且具有比第一绝缘膜更高的介电常数。高介电常数绝缘膜在俯视图中不位于场漏绝缘部的中心。

4. 发明申请

US20120025310A1 SEMICONDUCTOR DEVICE OF WHICH BREAKDOWN VOLTAGE IS IMPROVED 有权
标题翻译：破坏电压的半导体器件得到改进
公开(公告)号：US20120025310A1
公开(公告)日：2012-02-02
申请号：US13189860
申请日：2011-07-25
申请人： Kenji SASAKI
发明人： Kenji SASAKI
IPC分类号： H01L29/78
CPC分类号： H01L29/7835 , H01L29/0653 , H01L29/0692 , H01L29/66659
摘要： A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate through a gate insulating film; a source diffusion layer and a drain diffusion layer formed on both sides of the gate electrode, respectively, in the semiconductor substrate; and a field drain section formed below the gate electrode in the semiconductor substrate so as to be positioned between the gate electrode and the drain diffusion region and include an insulator. The field drain section includes: a first insulating film configured to be contact with the semiconductor substrate, and a second insulating film configured to be formed on the first insulating film and has a dielectric constant higher than a dielectric constant of the first insulating film.
摘要翻译：半导体器件包括：半导体衬底; 通过栅极绝缘膜形成在半导体衬底上的栅电极; 源极扩散层和漏极扩散层，分别形成在半导体衬底中的栅电极的两侧; 以及形成在半导体衬底中的栅电极下方以便位于栅电极和漏极扩散区之间并包括绝缘体的场漏极部分。场致漏区域包括：第一绝缘膜，被配置为与半导体衬底接触;以及第二绝缘膜，被配置为形成在第一绝缘膜上，并且具有高于第一绝缘膜的介电常数的介电常数。

5. 发明申请

US20090038287A1 HIGH HUMIDITY GAS TURBINE EQUIPMENT 有权
标题翻译：高湿度气体涡轮机设备
公开(公告)号：US20090038287A1
公开(公告)日：2009-02-12
申请号：US12186003
申请日：2008-08-05
申请人： Kenji SASAKI , Yoshiki Noguchi , Kenji Sakka , Hirotsugu Fukuhara
发明人： Kenji SASAKI , Yoshiki Noguchi , Kenji Sakka , Hirotsugu Fukuhara
IPC分类号： F02C3/30
CPC分类号： F02C7/10 , F02C3/305 , F05D2260/608
摘要： A high humidity gas turbine equipment includes a turbine; a compressor; a humidifier, which brings the air compressed by the compressor into contact with feed water to humidify the air; a regenerative heat exchanger, which causes the air humidified by the humidifier to be heated by exhaust gas from the turbine; a combustor, which burns the air heated by the regenerative heat exchanger and fuel to generate the combustion gas; a deaerating equipment including a deaerating section, a water storage tank, and a steam generating section, which causes feed water and makeup water in the water storage tank to be heated by exhaust gas from the turbine to evaporate and supplies the steam to the deaerating section; and a feed water supply pipe, through which the feed water and the makeup water in the water storage tank are supplied to the humidifier.
摘要翻译：高湿度燃气轮机设备包括涡轮机; 压缩机加湿器，使由压缩机压缩的空气与给水接触以加湿空气; 再生热交换器，其使由加湿器加湿的空气被来自涡轮机的废气加热; 燃烧器，其燃烧由再生热交换器加热的空气和燃料以产生燃烧气体; 包括脱气部，储水箱和蒸汽发生部的脱气装置，其使得储水箱中的给水和补给水被来自涡轮机的废气加热，蒸发并将蒸汽供给到脱气部 ; 以及供水管，供水和储水箱中的补给水通过该供水管供给加湿器。

6. 发明申请

US20110175635A1 PROBE FOR ELECTRICAL TEST AND METHOD FOR MANUFACTURING THE SAME, AND ELECTRICAL CONNECTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：电气测试用探针及其制造方法，电气连接装置及其制造方法
公开(公告)号：US20110175635A1
公开(公告)日：2011-07-21
申请号：US12984585
申请日：2011-01-04
申请人： Daigo NAKAMURA , Takashi AKINIWA , Kenji SASAKI
发明人： Daigo NAKAMURA , Takashi AKINIWA , Kenji SASAKI
IPC分类号： G01R1/067 , G01R31/00 , H01R43/00
CPC分类号： G01R3/00 , G01R1/06727 , G01R1/07342 , Y10T29/49117
摘要： A probe for an electrical test has a foot portion coupled with a board, an arm portion extending laterally from a lower end portion of the foot portion, and a needle tip portion projecting downward from a tip end portion of the arm portion. At least one selected from a group consisting of the foot portion, the arm portion, and the needle tip portion comprises a symbol specifying a position of the probe on the board.
摘要翻译：用于电测试的探针具有与板连接的脚部，从脚部的下端部侧向延伸的臂部以及从臂部的前端部向下方突出的针尖部。从由脚部，臂部和针尖部组成的组中选择的至少一个包括指定探针在板上的位置的符号。

7. 发明申请

US20100069443A1 COMPOUND WITH BENZAMIDE SKELETON HAVING CYCLOOXYGENASE-1 (COX-1)-SELECTIVE INHIBITORY ACTIVITY 审中-公开
标题翻译：具有CYCLOOXYGENASE-1（COX-1） - 选择性抑制活性的苯甲酸酯的化合物
公开(公告)号：US20100069443A1
公开(公告)日：2010-03-18
申请号：US12440519
申请日：2007-09-07
申请人： Hiroki KAKUTA , Kenji SASAKI , Hiroyuki ODA , Xiaoxia ZHENG , Shun HARADA
发明人： Hiroki KAKUTA , Kenji SASAKI , Hiroyuki ODA , Xiaoxia ZHENG , Shun HARADA
IPC分类号： A61K31/44 , C07D213/72 , A61P25/00 , A61P29/00 , A61P35/00 , C12N5/00 , C12N9/99
CPC分类号： A61K31/167 , A61K31/44 , C07C233/80 , C07C237/40 , C07D213/75
摘要： This invention provides a novel COX-1-selective inhibitor. This invention relates to a novel compound represented by the formula below or a salt thereof. This invention also relates to an analgesic agent, an antiinflammatory agent, an antitumor agent, an antiplatelet aggregation agent, and a cyclooxygenase-1-selective inhibitor comprising, as an active ingredient, such compound or salt thereof.
摘要翻译：本发明提供了一种新型的COX-1选择性抑制剂。本发明涉及由下式表示的新化合物或其盐。本发明还涉及一种止痛剂，抗炎剂，抗肿瘤剂，抗血小板聚集剂和环加氧酶-1-选择性抑制剂，其包含作为活性成分的这种化合物或其盐。

8. 发明申请

US20070108862A1 PERMANENT MAGNET SYNCHRONOUS MOTOR 有权
标题翻译：永磁同步电机
公开(公告)号：US20070108862A1
公开(公告)日：2007-05-17
申请号：US11622876
申请日：2007-01-12
申请人： Kenji SASAKI , Teruo TAMURA , Michihiro YOSHIDA , Toru TAKIMOTO , Hideyuki TANIGUCHI , Hiroyuki UESAKA
发明人： Kenji SASAKI , Teruo TAMURA , Michihiro YOSHIDA , Toru TAKIMOTO , Hideyuki TANIGUCHI , Hiroyuki UESAKA
IPC分类号： H02K21/12
CPC分类号： H02K1/276 , H02K21/46
摘要： A synchronous motor includes a stator, a rotor and permanent magnets. The rotor includes a rotor iron core that is rotatable relative to the stator, and conductor bars accommodated within corresponding slots in the rotor iron core. The conductor bars have their opposite ends shortcircuited by respective shortcircuit rings to form a starter cage conductor. The rotor also has a plurality of magnet retaining holes defined therein, in which permanent magnets are embedded. The conductor bar holes are positioned in an axial direction and inwardly from the magnet retaining holes. The conductor bars within the holes protrude outwardly from an axial end of the rotor iron core to form projections for securing an end plate to the end of the rotor iron core, the end plate comprising a non-magnetizable material.
摘要翻译：同步电动机包括定子，转子和永磁体。转子包括可相对于定子旋转的转子铁芯，以及容纳在转子铁芯中的相应槽内的导体棒。导体棒的相对端由相应的短路环短路以形成起动器架导体。转子还具有限定在其中的多个磁体保持孔，其中嵌入有永磁体。导体棒孔位于轴向方向上并且从磁体保持孔向内定位。孔内的导体棒从转子铁芯的轴向端部向外突出，以形成用于将端板固定到转子铁芯的端部的突出部，该端板包括不可磁化的材料。

9. 发明申请

US20120183269A1 COVER FOR OPTICAL PATH CHANGING MEMBER 有权
标题翻译：光路改变会员盖
公开(公告)号：US20120183269A1
公开(公告)日：2012-07-19
申请号：US13426219
申请日：2012-03-21
申请人： Tatsuya OHTA , Kunihiko FUJIWARA , Akito NISHIMURA , Kenji SASAKI , Yukio HAYASHI
发明人： Tatsuya OHTA , Kunihiko FUJIWARA , Akito NISHIMURA , Kenji SASAKI , Yukio HAYASHI
IPC分类号： G02B6/00
CPC分类号： G02B6/4214 , G02B6/43
摘要： An optical path changing member is assembled at ends of optical fibers and placed to face a substrate including an optical input/output terminal having optical axes inclined with respect to optical axes of the ends. The optical path changing member is made of a transparent material and includes a member body having a reflection surface for optically connecting the ends to the optical input/output terminal. The member body has optical fiber insertion holes and an end placement portion to which the insertion holes are open and in which the end faces of the optical fibers are placed. The reflection surface is formed so that light entering from the end faces of the optical fibers into the member body will be internally reflected toward the optical input/output terminal in the member body. The end placement portion is filled with an adhesive by which the ends are fixed to the member body.31
摘要翻译：光路改变部件组装在光纤的端部并且被放置成面对包括具有相对于端部的光轴倾斜的光轴的光学输入/输出端子的基板。光路改变构件由透明材料制成，并且包括具有用于将端部光学地连接到光学输入/输出端子的反射表面的构件体。构件主体具有光纤插入孔和插入孔打开并且其中放置光纤的端面的端部放置部分。反射面被形成为使得从光纤的端面进入构件主体的光将朝向构件体中的光学输入/输出端子内部反射。端部放置部分填充有粘合剂，端部固定到构件体上

10. 发明申请

US20100302681A1 Perpendicular magnetic recording head and method of manufacturing the same 有权
标题翻译：垂直磁记录头及其制造方法
公开(公告)号：US20100302681A1
公开(公告)日：2010-12-02
申请号：US12457060
申请日：2009-05-29
申请人： Tetsuya MINO , Naoto MATONO , Ikuhito ONODERA , Kazushi NISHIYAMA , Michitoshi TSUCHIYA , Kenji SASAKI
发明人： Tetsuya MINO , Naoto MATONO , Ikuhito ONODERA , Kazushi NISHIYAMA , Michitoshi TSUCHIYA , Kenji SASAKI
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： G11B5/3116 , G11B5/1278 , Y10T29/49046 , Y10T29/49052
摘要： A method of manufacturing a perpendicular magnetic write head capable of precisely narrowing a side gap is provided. A tip portion having a cross sectional geometry of an inverted trapezoid is formed in an opening portion of a non-magnetic layer and thereafter, the non-magnetic layer is etched with the tip portion as a mask. Thereby, a portion adjacent to the tip portion in a writing track width direction remains and an outermost edge portion of the tip portion in that direction is located on a plane which coincides with an etching face (side face) of the non-magnetic layer. When a gap layer is formed with a vapor phase growth such as a sputtering method to cover the side face of the non-magnetic layer and thereafter a side shield layer is formed adjacently to the tip portion therethrough, a thickness of the gap layer becomes extremely thin and is reproduced precisely. Therefore, the side gap is narrowed with high precision.
摘要翻译：提供了一种制造能够精确地缩小侧面间隙的垂直磁性写入头的方法。在非磁性层的开口部分中形成具有倒梯形截面几何形状的尖端部分，然后用尖端部分作为掩模蚀刻非磁性层。由此，沿着书写轨道宽度方向与尖端部分相邻的部分残留，并且尖端部分在该方向上的最外边缘部分位于与非磁性层的蚀刻面（侧面）重合的平面上。当用诸如溅射法的气相生长形成间隙层以覆盖非磁性层的侧面，然后与其顶端部分相邻形成侧屏蔽层时，间隙层的厚度变得非常大薄而被精确地复制。因此，侧面间隙以高精度变窄。

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