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1. 发明授权

US07217625B2 Method of fabricating a semiconductor device having a shallow source/drain region 有权
标题翻译：制造具有浅源/漏区的半导体器件的方法
公开(公告)号：US07217625B2
公开(公告)日：2007-05-15
申请号：US10753447
申请日：2004-01-09
申请人： Sang-Jin Lee , Kyung-Soo Kim , Chang-Bong Oh , Hee-Sung Kang
发明人： Sang-Jin Lee , Kyung-Soo Kim , Chang-Bong Oh , Hee-Sung Kang
IPC分类号： H01L21/336
CPC分类号： H01L29/6653 , H01L21/2652 , H01L21/26586 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A method of fabricating a semiconductor device forms a shallow source/drain region after a deep source/drain region. First, a gate insulating layer including a gate pattern and a gate electrode are formed on a semiconductor substrate. A buffer insulating layer, a first insulating layer, and a second insulating layer are then sequentially formed on the entire surface of the gate pattern and the semiconductor substrate. A first spacer is formed on the first insulating layer at both sidewalls of the gate pattern by etching the second insulating layer. A deep source/drain region is then formed on the semiconductor substrate as aligned by the first spacer. The first spacer is removed. Next, an offset spacer is formed at both sidewalls of the gate pattern by etching the first insulating layer. Finally, a shallow source/drain region is formed on the semiconductor substrate adjacent to the deep source/drain region as aligned by the offset spacer.
摘要翻译：半导体器件的制造方法在深源极/漏极区域之后形成浅的源极/漏极区域。首先，在半导体基板上形成包括栅极图案和栅电极的栅极绝缘层。然后在栅极图案和半导体衬底的整个表面上依次形成缓冲绝缘层，第一绝缘层和第二绝缘层。通过蚀刻第二绝缘层，在栅极图案的两个侧壁的第一绝缘层上形成第一间隔物。然后在第一间隔物对准的半导体衬底上形成深源/漏区。第一个垫片被去除。接下来，通过蚀刻第一绝缘层在栅极图案的两个侧壁处形成偏移间隔物。最后，在与偏移间隔物对齐的深源/漏区附近的半导体衬底上形成浅源极/漏极区。

2. 发明授权

US09068231B2 Method for screening cancer therapeutic agent using galectin-3, GSK-3β, and fascin-1 有权
标题翻译：使用半乳凝素-3，GSK-3和bgr以及肌成束蛋白-1筛选癌症治疗剂的方法
公开(公告)号：US09068231B2
公开(公告)日：2015-06-30
申请号：US12901337
申请日：2010-10-08
申请人： Kyung-Hee Chun , Seok-Jun Kim , Teak-Chin Cheong , Il-Ju Choi , Yeon Su Lee , Sang-Jin Lee
发明人： Kyung-Hee Chun , Seok-Jun Kim , Teak-Chin Cheong , Il-Ju Choi , Yeon Su Lee , Sang-Jin Lee
IPC分类号： C12Q1/00 , C12Q1/68 , G01N33/53 , G01N33/50 , G01N33/68
CPC分类号： C12Q1/6886 , C12N15/1138 , C12N2310/14 , C12N2320/10 , C12Q2600/136 , G01N33/5011 , G01N33/6845 , G01N2333/4724 , G01N2333/9121 , G01N2440/14 , G01N2500/02 , G01N2500/04
摘要： Disclosed is a method for screening a novel cancer therapeutic agent. The cancer therapeutic agent exhibits down-regulation of galectin-3 and fascin-1 or interferes with the interaction between galectin-3 and GSK-3β.
摘要翻译：公开了一种筛选新型癌症治疗剂的方法。癌症治疗剂显示半乳凝素-3和肌成束蛋白-1的下调或干扰半乳凝素-3和GSK-3与bgr之间的相互作用。

3. 发明授权

US08508017B2 Test device and semiconductor integrated circuit device 有权
标题翻译：测试器件和半导体集成电路器件
公开(公告)号：US08508017B2
公开(公告)日：2013-08-13
申请号：US13067833
申请日：2011-06-29
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： H01L21/70 , H01L23/58
CPC分类号： G01R31/2884 , G01R31/025 , G11C11/41 , G11C29/02 , G11C29/24 , G11C29/50008 , H01L22/34
摘要： Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.
摘要翻译：提供了提高生产率的测试设备和集成电路。根据示例实施例，测试设备可以包括具有第一测试元件的第一测试区域和具有限定在半导体衬底上的第二测试元件的第二测试区域。第一测试元件可以包括半导体衬底中的一对第一次级测试区域和一对第一测试栅极线。第一测试栅极线之一可以与第一次级测试区域中的一个重叠，而另一个第一测试栅极线可能与另一个第一次级测试区域重叠。第二测试元件可以包括对应于第一测试元件的结构，除了第二测试元件不包括对应于该对第一次级测试区域对和该对第一测试栅极线对的结构。

4. 发明申请

US20130095364A1 SECONDARY BATTERY 有权
标题翻译：二次电池
公开(公告)号：US20130095364A1
公开(公告)日：2013-04-18
申请号：US13475838
申请日：2012-05-18
申请人： Jun-Sun Yong , Chang-Seob Kim , Sang-Jin Lee , Sae-Weon Roh , Sang-Jin Park
发明人： Jun-Sun Yong , Chang-Seob Kim , Sang-Jin Lee , Sae-Weon Roh , Sang-Jin Park
IPC分类号： H01M2/30 , H01M10/50 , H01M2/02
CPC分类号： H01M2/02 , H01M2/04 , H01M2/0404 , H01M2/0473 , H01M2/06 , H01M2/30 , H01M2/34
摘要： A secondary battery including: an electrode assembly; a case containing the electrode assembly; a cap plate covering an opening of the case; a safety device on the cap plate and including a first lead; and an electrode terminal electrically connecting the electrode assembly and the first lead, the cap plate including a conductive member and an insulating portion, and the first lead is supported on the insulating portion, and the conductive member and the insulating portion being integrally formed.
摘要翻译：一种二次电池，包括：电极组件; 包含电极组件的壳体; 覆盖所述壳体的开口的盖板; 盖板上的安全装置，包括第一引线; 以及电极端子，其电连接所述电极组件和所述第一引线，所述盖板包括导电构件和绝缘部，所述第一引线被支撑在所述绝缘部上，并且所述导电构件和所述绝缘部一体地形成。

5. 发明授权

US08258805B2 Test device and semiconductor integrated circuit device 有权
标题翻译：测试器件和半导体集成电路器件
公开(公告)号：US08258805B2
公开(公告)日：2012-09-04
申请号：US12458535
申请日：2009-07-15
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： G01R31/26 , H01L23/58
CPC分类号： H01L22/34 , G11C11/41 , G11C29/50
摘要： A test device and a semiconductor integrated circuit are provided. The test device may include a first test region and a second test region defined on a semiconductor substrate. The first test region may include a first test element and the second region may include a second test element. The first test element may include a pair of first secondary test regions in the semiconductor substrate extending in a first direction. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions.
摘要翻译：提供了一种测试装置和半导体集成电路。测试装置可以包括限定在半导体衬底上的第一测试区域和第二测试区域。第一测试区域可以包括第一测试元件，并且第二区域可以包括第二测试元件。第一测试元件可以包括在第一方向上延伸的半导体衬底中的一对第一次级测试区域。第二测试元件可以包括对应于第一测试元件的结构，除了第二测试元件不包括与该对第一次测试区对应的结构。

6. 发明申请

US20110260161A1 Test device and semiconductor integrated circuit device 有权
公开(公告)号：US20110260161A1
公开(公告)日：2011-10-27
申请号：US13067833
申请日：2011-06-29
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： H01L23/544
CPC分类号： G01R31/2884 , G01R31/025 , G11C11/41 , G11C29/02 , G11C29/24 , G11C29/50008 , H01L22/34
摘要： Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.

7. 发明授权

US07994811B2 Test device and semiconductor integrated circuit device 有权
标题翻译：测试器件和半导体集成电路器件
公开(公告)号：US07994811B2
公开(公告)日：2011-08-09
申请号：US12385117
申请日：2009-03-31
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： G01R31/02
CPC分类号： G01R31/2884 , G01R31/025 , G11C11/41 , G11C29/02 , G11C29/24 , G11C29/50008 , H01L22/34
摘要： Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.
摘要翻译：提供了提高生产率的测试设备和集成电路。根据示例实施例，测试设备可以包括具有第一测试元件的第一测试区域和具有限定在半导体衬底上的第二测试元件的第二测试区域。第一测试元件可以包括半导体衬底中的一对第一次级测试区域和一对第一测试栅极线。第一测试栅极线之一可以与第一次级测试区域中的一个重叠，而另一个第一测试栅极线可能与另一个第一次级测试区域重叠。第二测试元件可以包括对应于第一测试元件的结构，除了第二测试元件不包括对应于该对第一次级测试区域对和该对第一测试栅极线对的结构。

8. 发明申请

US20100277433A1 TOUCH PANEL DEVICE AND METHOD OF DETECTING CONTACT POSITION THEREOF 审中-公开
标题翻译：触控面板装置及其接触位置检测方法
公开(公告)号：US20100277433A1
公开(公告)日：2010-11-04
申请号：US12740470
申请日：2008-04-30
申请人： Sang-Jin Lee , Chul-Yong Joung , Bang-Won Lee
发明人： Sang-Jin Lee , Chul-Yong Joung , Bang-Won Lee
IPC分类号： G06F3/045
CPC分类号： G06F3/044
摘要： Provided are a touch pad device and a method of detecting a contact position thereof. The touch panel device includes: a touch panel having a surface on which at least one pair of touch patterns formed of a conductive material are formed; and a touch sensor for generating a contact signal corresponding to a contact position of a contact object using impedances of a pair of touch patterns when the pair of touch patterns are contacted by the contact object. The touch panel device includes a plurality of pairs of touch patterns formed of a conductive material. A first axis position of a contact object is determined depending on whether or not the touch patterns are contacted by the contact object, and a second axis position of the contact object is determined by detecting variations in capacitance of the touch patterns or delay times by which a reference signal applied to the touch patterns is delayed. Thus, a contact position of the contact object can be detected using the first and second axis positions. Since the touch panel uses a one-layer ITO film, manufacturing the touch panel device with improved transparency can be easy and economical.
摘要翻译：提供了触摸板装置和检测其接触位置的方法。触摸面板装置包括：触摸面板，其具有形成由导电材料形成的至少一对触摸图案的表面; 以及触摸传感器，用于当所述一对触摸图案被所述接触对象接触时，使用所述一对触摸图案的阻抗来产生与所述接触物体的接触位置相对应的接触信号。触摸面板装置包括由导电材料形成的多对触摸图案。接触物体的第一轴位置取决于接触物体是否接触触摸图案，并且通过检测触摸图案的电容的变化或延迟时间来确定接触物体的第二轴位置施加到触摸图案的参考信号被延迟。因此，可以使用第一和第二轴位置来检测接触物体的接触位置。由于触摸面板使用单层ITO膜，所以制造具有提高的透明度的触摸面板装置可以容易且经济。

9. 发明申请

US20100013513A1 Test device and semiconductor integrated circuit device 有权
标题翻译：测试器件和半导体集成电路器件
公开(公告)号：US20100013513A1
公开(公告)日：2010-01-21
申请号：US12385117
申请日：2009-03-31
申请人： Sang-Jin Lee , Gin-Kyu Lee
发明人： Sang-Jin Lee , Gin-Kyu Lee
IPC分类号： G01R31/26 , H01L23/58
CPC分类号： G01R31/2884 , G01R31/025 , G11C11/41 , G11C29/02 , G11C29/24 , G11C29/50008 , H01L22/34
摘要： Test devices and integrated circuits with improved productivity are provided. In accordance with example embodiments, a test device may include a first test region with a first test element and a second test region with a second test element defined on a semiconductor substrate. The first test element may include a pair of first secondary test regions in the semiconductor substrate and a pair of first test gate lines. One of the first test gate lines may overlap one of the first secondary test regions and the other first test gate line may overlap the other first secondary test region. The second test element may include structures corresponding to the first test element except the second test element does not include structures corresponding to the pair of first secondary test regions and the pair of first test gate lines.
摘要翻译：提供了提高生产率的测试设备和集成电路。根据示例实施例，测试设备可以包括具有第一测试元件的第一测试区域和具有限定在半导体衬底上的第二测试元件的第二测试区域。第一测试元件可以包括半导体衬底中的一对第一次级测试区域和一对第一测试栅极线。第一测试栅极线之一可以与第一次级测试区域中的一个重叠，而另一个第一测试栅极线可能与另一个第一次级测试区域重叠。第二测试元件可以包括对应于第一测试元件的结构，除了第二测试元件不包括对应于该对第一次级测试区域对和该对第一测试栅极线对的结构。

10. 发明授权

US07462787B1 Rotary manipulation type input device 失效
标题翻译：旋转操作型输入装置
公开(公告)号：US07462787B1
公开(公告)日：2008-12-09
申请号：US12213463
申请日：2008-06-19
申请人： Eung-Cheon Kang , Sang-Jin Lee
发明人： Eung-Cheon Kang , Sang-Jin Lee
IPC分类号： H01H9/00
CPC分类号： H01H25/041 , H01H13/48 , H01H2025/043 , H01H2025/048
摘要： A rotary manipulation type input device is disclosed. The rotary manipulation type input device may include: a wheel, which may receive information as input by rotation; a sensor unit, which may sense a rotation of the wheel; and a switch, which may generate an on/off signal for connecting and disconnecting a power supply to the sensor unit. This configuration can be used to reduce power consumption in the rotary manipulation type input device.
摘要翻译：公开了一种旋转操作型输入装置。旋转操作型输入装置可以包括：可以通过旋转接收信息作为输入的轮; 传感器单元，其可以感测车轮的旋转; 以及可以产生用于连接和断开与传感器单元的电源的开/关信号的开关。该配置可用于降低旋转操作型输入设备的功耗。

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