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1. 发明授权

US07972687B2 Porous silicon and method of preparing the same 有权
标题翻译：多孔硅及其制备方法
公开(公告)号：US07972687B2
公开(公告)日：2011-07-05
申请号：US11967138
申请日：2007-12-29
申请人： Sang Woo Lim , Young Hwan Lee
发明人： Sang Woo Lim , Young Hwan Lee
IPC分类号： B32B3/26
CPC分类号： C25D11/32 , H01L21/0203 , H01L21/3063 , H01L33/346 , Y10T428/24942 , Y10T428/249953 , Y10T428/24996 , Y10T428/249969
摘要： The present invention relates to a porous silicon material comprising one or more pore parts which include a first pore, a second pore, and a third pore. The first pore is formed in an upper side of the silicon. The second pore is formed in a lower side of the first pore and has a diameter that is larger or smaller than a diameter of the first pore. The third pore is formed in a lower side of the second pore and has a diameter that is identical or similar to the diameter of the first pore. The pore part having a double structure is formed in a silicon material. Since different electronic materials can be implanted into different pores of the porous silicon, it is easy to form interfaces of the implanted electronic materials.
摘要翻译：本发明涉及包含一个或多个孔部分的多孔硅材料，其包括第一孔，第二孔和第三孔。第一孔形成在硅的上侧。第二孔形成在第一孔的下侧，直径大于或小于第一孔的直径。第三孔形成在第二孔的下侧，并且具有与第一孔的直径相同或相似的直径。具有双重结构的孔部分形成在硅材料中。由于可以将不同的电子材料注入到多孔硅的不同孔中，所以容易形成植入的电子材料的界面。

2. 发明申请

US20080166538A1 POROUS SILICON AND METHOD OF PREPARING THE SAME 有权
标题翻译：多孔硅及其制备方法
公开(公告)号：US20080166538A1
公开(公告)日：2008-07-10
申请号：US11967138
申请日：2007-12-29
申请人： Sang Woo LIM , Young Hwan Lee
发明人： Sang Woo LIM , Young Hwan Lee
IPC分类号： B32B3/26 , C25D9/06
CPC分类号： C25D11/32 , H01L21/0203 , H01L21/3063 , H01L33/346 , Y10T428/24942 , Y10T428/249953 , Y10T428/24996 , Y10T428/249969
摘要： The present invention relates to a vertical-alignment type porous silicon including a first pore 11 which is formed in an upper side of the silicon, a second pore 12 which is formed in a lower side of the first pore 11 and has a diameter that is larger or smaller than a diameter of the first pore 11, a third pore 13 which is formed in a lower side of the second pore 12 and has a diameter that is identical or similar to the diameter of the first pore 11, and one or more pore parts 11, 12, and 13 which includes the first pore 11, the second pore 12, and the third pore 13. A pore part having a double structure is formed in a silicon. Thus, the silicon having an improved surface area can be obtained as compared to a known porous silicon, and since different electronic materials can be implanted into different pores, it is easy to form interfaces of the implanted electronic materials.
摘要翻译：本发明涉及一种垂直取向型多孔硅，其包括形成于硅的上侧的第一孔11，第二孔12，其形成在第一孔11的下侧，直径为大于或小于第一孔11的直径;第三孔13，其形成在第二孔12的下侧，并且具有与第一孔11的直径相同或相似的直径，以及一个或多个包括第一孔11，第二孔12和第三孔13的孔部分11,12和13。在硅中形成具有双重结构的孔部分。因此，与已知的多孔硅相比，可以获得具有改善的表面积的硅，并且由于可以将不同的电子材料注入到不同的孔中，所以容易形成植入的电子材料的界面。

3. 发明授权

US08020081B2 Multi-level cell memory devices using trellis coded modulation and methods of storing data in and reading data from the memory devices 有权
标题翻译：使用网格编码调制的多级单元存储器件以及将数据存储在存储器件中并从其读取数据的方法
公开(公告)号：US08020081B2
公开(公告)日：2011-09-13
申请号：US11802334
申请日：2007-05-22
申请人： Jun Jin Kong , Sung Chung Park , Yun Tae Lee , Young Hwan Lee , Si Hoon Hong , Jae Woong Hyun , Dong Ku Kang
发明人： Jun Jin Kong , Sung Chung Park , Yun Tae Lee , Young Hwan Lee , Si Hoon Hong , Jae Woong Hyun , Dong Ku Kang
IPC分类号： H03M13/03
CPC分类号： G11C11/5628 , G11C7/1006 , G11C11/5642 , G11C16/10
摘要： A multi-level cell (MLC) memory device may include: a MLC memory cell; an outer encoder that encodes data using a first encoding scheme to generate an outer encoded bit stream; and a trellis coded modulation (TCM) modulator that applies a program pulse to the MLC memory cell to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream. A method of storing data in a MLC memory device, reading data from the MLC memory device, or storing data in and reading data from the MLC memory device may include: encoding data using a first encoding scheme to generate an outer encoded bit stream; and applying a program pulse to a MLC memory cell of the MLC memory device to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream.
摘要翻译：多级单元（MLC）存储器件可以包括：MLC存储器单元; 外部编码器，其使用第一编码方案对数据进行编码以生成外部编码比特流; 以及网格编码调制（TCM）调制器，其向MLC存储器单元施加编程脉冲以将数据写入MLC存储器单元。可以通过对外部编码比特流进行TCM调制来生成编程脉冲。一种在MLC存储器件中存储数据，从MLC存储器件读取数据或将数据存储在MLC存储器件中并从MLC存储器件读取数据的方法可以包括：使用第一编码方案对数据进行编码以产生外编码位流; 以及向MLC存储器件的MLC存储器单元施加编程脉冲以将数据写入MLC存储单元。可以通过对外部编码比特流进行TCM调制来生成编程脉冲。

4. 发明申请

US20110213930A1 Multi-level cell memory device and method thereof 有权
标题翻译：多级单元存储装置及其方法
公开(公告)号：US20110213930A1
公开(公告)日：2011-09-01
申请号：US13067099
申请日：2011-05-09
申请人： Sung Chung Park , Jun Jin Kong , Young Hwan Lee , Dong Ku Kang
发明人： Sung Chung Park , Jun Jin Kong , Young Hwan Lee , Dong Ku Kang
IPC分类号： G06F12/08
CPC分类号： G11C11/5621 , G11C7/1006 , G11C29/00
摘要： A Multi-Level Cell (MLC) memory device and method thereof are provided. The example MLC memory device may be configured to perform data operations, and may include an MLC memory cell, a first coding device performing a first coding function, the first coding function being one of an encoding function and a decoding function, a second coding device performing a second coding function, the second coding function being one of an encoding function and a decoding function and a signal module configured to perform at least one of instructing the MLC memory cell to store data output by the second coding device if the first and second coding functions are encoding functions, and generating a demapped bit stream based on data retrieved from the MLC memory cell if the first and second coding functions are decoding functions.
摘要翻译：提供了一种多级单元（MLC）存储器件及其方法。示例MLC存储器件可以被配置为执行数据操作，并且可以包括MLC存储器单元，执行第一编码功能的第一编码装置，作为编码功能和解码功能之一的第一编码功能，第二编码装置执行第二编码功能，所述第二编码功能是编码功能和解码功能之一;以及信号模块，被配置为执行指令所述MLC存储器单元存储由所述第二编码装置输出的数据中的至少一个，如果所述第一和第二编码功能编码功能是编码功能，并且如果第一和第二编码功能是解码功能，则基于从MLC存储器单元检索的数据来生成解映射比特流。

5. 外观设计

USD626526S1 Mobile phone 有权
公开(公告)号：USD626526S1
公开(公告)日：2010-11-02
申请号：US29354346
申请日：2010-01-22
申请人： Young Hwan Lee , Seung Il Lee
设计人： Young Hwan Lee , Seung Il Lee

6. 发明申请

US20100117559A1 Illumination Apparatus and Driving Method Thereof 失效
标题翻译：照明装置及其驱动方法
公开(公告)号：US20100117559A1
公开(公告)日：2010-05-13
申请号：US12615155
申请日：2009-11-09
申请人： Young Hwan Lee
发明人： Young Hwan Lee
IPC分类号： H05B37/02 , H05B41/36
CPC分类号： H05B33/0803
摘要： An illumination apparatus includes an adapter that converts power into driving power; a light emitting device illumination part that is detachably and electrically connected to the adapter to emit light according to the driving power from the adapter; and a driving unit that controls an illumination direction of the light emitting device.
摘要翻译：照明装置包括将电力转换成驱动电力的适配器; 发光器件照明部分，其可拆卸地电连接到所述适配器以根据来自所述适配器的驱动功率发光; 以及控制发光装置的照明方向的驱动单元。

7. 发明申请

US20100117550A1 Illumination Apparatus 失效
标题翻译：照明装置
公开(公告)号：US20100117550A1
公开(公告)日：2010-05-13
申请号：US12615125
申请日：2009-11-09
申请人： Young Hwan Lee , KWAN SOO JANG , CHUNG HYUN CHO
发明人： Young Hwan Lee , KWAN SOO JANG , CHUNG HYUN CHO
IPC分类号： H05B41/24 , H05B41/36 , H05B37/02
CPC分类号： H05B33/0809 , F21K9/23 , F21K9/27 , F21V23/008 , F21Y2107/20 , F21Y2115/10 , H01R33/942 , H05B33/0803
摘要： An illumination apparatus can include an adapter that converts alternating power into driving power, and controls one or more of the color, brightness, chroma, and blinking of a light emitting device; and a light emitting device illumination part detachably and electrically connected to the adapter, containing one or more light emitting devices configured to emit light in accordance with the driving power and control.
摘要翻译：照明装置可以包括将交替功率转换为驱动功率的适配器，并且控制发光装置的颜色，亮度，色度和闪烁中的一个或多个; 以及发光装置照明部，其可拆卸地电连接到所述适配器，所述发光装置照明部包含被配置为根据所述驱动力和控制发光的一个或多个发光装置。

8. 发明授权

US07706181B2 Multi-bit programming device and method using single-bit memory cells 有权
标题翻译：多位编程设备和使用单位存储单元的方法
公开(公告)号：US07706181B2
公开(公告)日：2010-04-27
申请号：US11896349
申请日：2007-08-31
申请人： Sung-Jae Byun , Dong Hyuk Chae , Kyoung Lae Cho , Jun Jin Kong , Young Hwan Lee , Seung Jae Lee , Nam Phil Jo , Dong Ku Kang
发明人： Sung-Jae Byun , Dong Hyuk Chae , Kyoung Lae Cho , Jun Jin Kong , Young Hwan Lee , Seung Jae Lee , Nam Phil Jo , Dong Ku Kang
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C11/5628 , G11C2211/5621 , G11C2211/5641
摘要： A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells.
摘要翻译：提供了一种用于非易失性存储器的多位编程设备和方法。在一个示例实施例中，多位编程设备可以包括多位编程单元，其被配置为将原始多位数据多位地编程到存储单元阵列中的目标存储器单元，以及备份编程单元，被配置为选择备份相对于原始多位数据的每个位存储单元阵列中的存储器单元，以及将原始多位数据的每个位编程到所选择的备份存储器单元中的相应一个。

9. 发明申请

US20090190396A1 Memory device and method of reading memory data 有权
标题翻译：存储器件和读取存储器数据的方法
公开(公告)号：US20090190396A1
公开(公告)日：2009-07-30
申请号：US12219264
申请日：2008-07-18
申请人： Kyoung Lae Cho , Dong Hun Yu , Jun Jin Kong , Seung-Hwan Song , Yoon Dong Park , Jong Han Kim , Young Hwan Lee
发明人： Kyoung Lae Cho , Dong Hun Yu , Jun Jin Kong , Seung-Hwan Song , Yoon Dong Park , Jong Han Kim , Young Hwan Lee
IPC分类号： G11C16/06 , G11C7/00
CPC分类号： G11C16/34 , G11C11/5642 , G11C2211/5634
摘要： A memory device and a method of reading multi-bit data stored in a multi-bit cell array may be provided. The memory device may include a multi-bit cell array including a least one memory page with each memory page having a plurality of multi-bit cells, and a determination unit to divide the plurality of multi-bit cells into a first group and second group. The first group may include multi-bit cells with a threshold voltage higher than a reference voltage. The second group may include multi-bit cells with a threshold voltage lower than the reference voltage. The determination unit may sequentially update the first group and second group while changing the reference voltage.
摘要翻译：可以提供存储器件和读取存储在多位单元阵列中的多位数据的方法。存储器件可以包括多比特单元阵列，其包括至少一个存储器页，每个存储器页具有多个多位单元，以及确定单元，用于将多个多位单元划分成第一组和第二组。第一组可以包括具有高于参考电压的阈值电压的多位单元。第二组可以包括阈值电压低于参考电压的多位单元。确定单元可以在改变参考电压的同时顺序地更新第一组和第二组。

10. 发明申请

US20080137413A1 Multi-level cell memory devices using trellis coded modulation and methods of storing data in and reading data from the memory devices 有权
标题翻译：使用网格编码调制的多级单元存储器件以及将数据存储在存储器件中并从其读取数据的方法
公开(公告)号：US20080137413A1
公开(公告)日：2008-06-12
申请号：US11802334
申请日：2007-05-22
申请人： Jun Jin Kong , Sung Chung Park , Yun Tae Lee , Young Hwan Lee , Si Hoon Hong , Jae Woong Hyun , Dong Ku Kang
发明人： Jun Jin Kong , Sung Chung Park , Yun Tae Lee , Young Hwan Lee , Si Hoon Hong , Jae Woong Hyun , Dong Ku Kang
IPC分类号： G11C11/34
CPC分类号： G11C11/5628 , G11C7/1006 , G11C11/5642 , G11C16/10
摘要： A multi-level cell (MLC) memory device may include: a MLC memory cell; an outer encoder that encodes data using a first encoding scheme to generate an outer encoded bit stream; and a TCM modulator that applies a program pulse to the MLC memory cell to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream. A method of storing data in a MLC memory device, reading data from the MLC memory device, or storing data in and reading data from the MLC memory device may include: encoding data using a first encoding scheme to generate an outer encoded bit stream; and applying a program pulse to a MLC memory cell of the MLC memory device to write the data in the MLC memory cell. The program pulse may be generated by TCM modulating the outer encoded bit stream.
摘要翻译：多级单元（MLC）存储器件可以包括：MLC存储器单元; 外部编码器，其使用第一编码方案对数据进行编码以生成外部编码比特流; 以及将编程脉冲施加到MLC存储器单元以将数据写入MLC存储单元的TCM调制器。可以通过对外部编码比特流进行TCM调制来生成编程脉冲。一种在MLC存储器件中存储数据，从MLC存储器件读取数据或将数据存储在MLC存储器件中并从MLC存储器件读取数据的方法可以包括：使用第一编码方案对数据进行编码以产生外编码位流; 以及向MLC存储器件的MLC存储器单元施加编程脉冲以将数据写入MLC存储单元。可以通过对外部编码比特流进行TCM调制来生成编程脉冲。

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