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    • 2. 发明申请
    • Layout method of power line for semiconductor integrated circuit and semiconductor integrated circuit manufactured by the layout method
    • 半导体集成电路电源线布局方法和半导体集成电路布局方法
    • US20070134852A1
    • 2007-06-14
    • US11523212
    • 2006-09-19
    • Sang Jin ByunHyun Kyu Yu
    • Sang Jin ByunHyun Kyu Yu
    • H01L21/82
    • H01L27/0207
    • Provided are a layout method of a power line for a semiconductor integrated circuit and a semiconductor integrated circuit manufactured by the layout method. The layout method includes the steps of: forming a decoupling capacitor on a substrate; laying out a first metal layer, connected to the decoupling capacitor through a contact, above a region where the decoupling capacitor is formed so as to cover the decoupling capacitor; and laying out a second metal layer above a region where the first metal layer is formed. Therefore, the metal layers and the decoupling capacitor are laid out in the same region so that a chip area can be prevented from being additionally consumed at the time of laying out the decoupling capacitor, and degradation which may occur due to connection line resistance from the power lines to the decoupling capacitors can be prevented.
    • 提供了一种用于半导体集成电路的电力线的布局方法和通过布局方法制造的半导体集成电路。 布局方法包括以下步骤:在衬底上形成去耦电容器; 在形成去耦电容器的区域上方布置第一金属层,其通过接触件连接到去耦电容器,以覆盖去耦电容器; 并在其上形成第一金属层的区域上方布置第二金属层。 因此,金属层和去耦电容器布置在相同的区域中,使得在布置去耦电容器时可以防止芯片面积额外消耗,并且可能由于连接线电阻而导致的劣化 可以防止到去耦电容器的电源线。
    • 3. 发明授权
    • Layout method of power line for semiconductor integrated circuit and semiconductor integrated circuit manufactured by the layout method
    • 半导体集成电路电源线布局方法和半导体集成电路布局方法
    • US07456063B2
    • 2008-11-25
    • US11523212
    • 2006-09-19
    • Sang Jin ByunHyun Kyu Yu
    • Sang Jin ByunHyun Kyu Yu
    • H01L21/8242
    • H01L27/0207
    • Provided are a layout method of a power line for a semiconductor integrated circuit and a semiconductor integrated circuit manufactured by the layout method. The layout method includes the steps of: forming a decoupling capacitor on a substrate; laying out a first metal layer, connected to the decoupling capacitor through a contact, above a region where the decoupling capacitor is formed so as to cover the decoupling capacitor; and laying out a second metal layer above a region where the first metal layer is formed. Therefore, the metal layers and the decoupling capacitor are laid out in the same region so that a chip area can be prevented from being additionally consumed at the time of laying out the decoupling capacitor, and degradation which may occur due to connection line resistance from the power lines to the decoupling capacitors can be prevented.
    • 提供了一种用于半导体集成电路的电力线的布局方法和通过布局方法制造的半导体集成电路。 布局方法包括以下步骤:在衬底上形成去耦电容器; 在形成去耦电容器的区域上方布置第一金属层,其通过接触件连接到去耦电容器,以覆盖去耦电容器; 并在其上形成第一金属层的区域上方布置第二金属层。 因此,金属层和去耦电容器布置在相同的区域中,使得在布置去耦电容器时可以防止芯片面积额外消耗,并且可能由于连接线电阻而导致的劣化 可以防止到去耦电容器的电源线。
    • 5. 发明授权
    • Replica bias circuit
    • 复制偏置电路
    • US07429874B2
    • 2008-09-30
    • US11451962
    • 2006-06-13
    • Sang Jin ByunHyun Kyu Yu
    • Sang Jin ByunHyun Kyu Yu
    • H03K19/094
    • H03F1/301H03F3/45183H03F2200/453H03F2200/456H03F2200/513
    • Provided is a replica bias circuit which is suitable for multi-layer stacked CMOS current mode logic (CML) and is stably used in application fields using a low power supply voltage. The replica bias circuit applies a reference voltage to gates of target transistors constituting an electronic circuit. The replica bias circuit includes a sub threshold voltage generator for maintaining a voltage difference lower than a threshold voltage of the transistor; and a replica path including devices designed by referring to dimensions of constituent devices forming a current flow path, the current flow path including the target transistors in the electronic circuit. With the replica bias circuit, multi-layer stacked CMOS current mode logic (CML) circuits can stably operate even at a low power supply voltage.
    • 提供了一种适用于多层堆叠CMOS电流模式逻辑(CML)的复制偏置电路,并且在使用低电源电压的应用领域中稳定地使用。 复制偏置电路对构成电子电路的目标晶体管的栅极施加参考电压。 复制偏置电路包括用于保持低于晶体管的阈值电压的电压差的副阈值电压发生器; 以及包括通过参考形成电流流路的构成装置的尺寸而设计的装置的复制路径,所述电流流路包括电子电路中的目标晶体管。 利用复制偏置电路,即使在低电源电压下,多层堆叠CMOS电流模式逻辑(CML)电路也能稳定地工作。
    • 7. 发明授权
    • Digital receiver
    • 数字接收机
    • US08509353B2
    • 2013-08-13
    • US12818510
    • 2010-06-18
    • Seon-Ho HanHyun Kyu Yu
    • Seon-Ho HanHyun Kyu Yu
    • H03K9/00
    • H04B1/0025H04B1/001
    • In a digital receiver, a noise attenuation and signal magnitude mapping variable amplifying unit includes a filter and an amplifier, amplifies and band-bass filters an analog signal and attenuating white noise and an interference signal other than a band signal. An ADC performs subsampling on a carrier frequency of a desired signal and performs oversampling on the band of the desired signal by using a sampling frequency to convert the analog signal which has passed through the noise attenuation and signal magnitude mapping variable amplifying unit into a digital signal of a direct conversion frequency band or an intermediate frequency band. The ADC has a dynamic range for processing both the desired signal and an undesired signal adjacent to the desired signal. A digital signal processing unit converts a signal frequency of the digital signal or digital-filters an undesired signal within the digital signal and processes the digital signal by digitally adjusting a gain.
    • 在数字接收机中,噪声衰减和信号幅度映射可变放大单元包括滤波器和放大器,对模拟信号进行放大和频带滤波,并衰减白噪声和除频带信号之外的干扰信号。 ADC在期望信号的载波频率上执行子采样,并通过使用采样频率对已经通过噪声衰减和信号幅度映射可变放大单元的模拟信号进行数字信号的期望信号的频带上的过采样, 的直接转换频带或中频带。 ADC具有用于处理期望信号和与期望信号相邻的不期望信号的动态范围。 数字信号处理单元转换数字信号的信号频率或数字滤波数字信号内的不需要的信号,并通过数字调节增益来处理数字信号。
    • 10. 发明授权
    • Digital RF converter and RF converting method thereof
    • 数字RF转换器及其RF转换方法
    • US08217818B2
    • 2012-07-10
    • US12902125
    • 2010-10-11
    • Jang Hong ChoiHyun Ho BooHyun Kyu Yu
    • Jang Hong ChoiHyun Ho BooHyun Kyu Yu
    • H03M1/66
    • H03M3/504H03M3/32
    • Provided are a digital radio frequency (RF) converter and an RF converting method thereof. The RF frequency converter includes first and second RF output terminals of a differential form outputting an RF signal; a differential switch selectively connecting first and second nodes into the first and second RF output terminals in response to an oscillating waveform; at least one digital delay device column outputting a plurality of unit bits by sequentially delaying an input bit corresponding to the digital input signal; a front-end processor summing an output of the at least one digital delay device column; a plurality of current sources; and a plurality of first switches corresponding to the plurality of current sources, respectively, and delivering currents of current sources whose number corresponds to the sum value of the front-end processor among the plurality of current sources, to one of the first and second nodes.
    • 提供一种数字射频(RF)转换器及其RF转换方法。 RF频率转换器包括输出RF信号的差分形式的第一和第二RF输出端; 差分开关响应于振荡波形选择性地将第一和第二节点连接到第一和第二RF输出端子中; 至少一个数字延迟装置列通过顺序地延迟对应于数字输入信号的输入位而输出多个单位位; 前端处理器对所述至少一个数字延迟装置列的输出求和; 多个电流源; 以及分别对应于多个电流源的多个第一开关,并将数量对应于多个电流源中的前端处理器的和值的电流源的电流传送到第一和第二节点之一 。