专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110033965A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20110033965A1
公开(公告)日：2011-02-10
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

2. 发明申请

US20080048206A1 VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US20080048206A1
公开(公告)日：2008-02-28
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
发明人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

3. 发明申请

US20090221110A1 VERTICAL LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直发光二极管及其制造方法
公开(公告)号：US20090221110A1
公开(公告)日：2009-09-03
申请号：US12466086
申请日：2009-05-14
申请人： Su Yeol LEE , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
发明人： Su Yeol LEE , Sang Ho Yoon , Doo Go Baik , Seok Beom Choi , Tae Sung Jang , Jong Gun Woo
IPC分类号： H01L21/28
CPC分类号： H01L33/32 , H01L33/14 , H01L33/40
摘要： Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
摘要翻译：提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。

4. 发明申请

US20080042149A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20080042149A1
公开(公告)日：2008-02-21
申请号：US11692568
申请日：2007-03-28
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

5. 发明申请

US20110053298A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110053298A1
公开(公告)日：2011-03-03
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/22 , H01L33/48
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

6. 发明申请

US20110210352A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS 有权
标题翻译：具有多细胞阵列，发光模块和照明装置的半导体发光器件
公开(公告)号：US20110210352A1
公开(公告)日：2011-09-01
申请号：US13034279
申请日：2011-02-24
申请人： Su Yeol LEE , Yong Tae KIM , Jin Bock LEE , Gi Bum KIM
发明人： Su Yeol LEE , Yong Tae KIM , Jin Bock LEE , Gi Bum KIM
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L24/24 , H01L27/153 , H01L33/30 , H01L33/62 , H01L2224/48091 , H01L2924/12041 , H01L2924/12042 , H01L2924/00014 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.
摘要翻译：一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。

7. 发明申请

US20140367720A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140367720A1
公开(公告)日：2014-12-18
申请号：US14300642
申请日：2014-06-10
申请人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
发明人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
IPC分类号： H01L33/42 , H01L33/40
CPC分类号： H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.
摘要翻译：提供半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极，并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分，至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中，并且指状区域以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式