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1. 发明专利

IL149249A NATIVE LANGUAGE DOMAIN NAME REGISTRATION AND USAGE 未知
公开(公告)号：IL149249A
公开(公告)日：2009-12-24
申请号：IL14924902
申请日：2002-04-21
申请人： KI SEOK KIM , JIYUL YOO
IPC分类号： G06Q50/00 , G06F17/00 , G06F17/40 , G06F40/00 , G06F40/20 , H04L29/12
摘要： A computer implemented method of establishing a communication link between a user computer and a destination website over a world wide web network, comprising: receiving at a computer a universal resource locator of said destination website, said universal resource locator having a native language domain name that comprises at least one non-alphanumeric character: converting in a processor each of said at least one non-alphanumeric character to a corresponding alphanumeric character to produce an alphanumeric domain name; performing a domain name server inquiry using said alphanumeric domain name to obtain an Internet Protocol (IP) address of said destination website; and establishing said communication link between said user computer and said destination website using said Internet Protocol (IP) address.

2. 发明专利

BR0107126A 未知
公开(公告)号：BR0107126A
公开(公告)日：2002-06-11
申请号：BR0107126
申请日：2001-08-17
申请人： KI SEOK KIM , JIYUL YOO
发明人： KIM KI SEOK , YOO JIYUL
IPC分类号： G06Q50/00 , G06F17/00 , G06F17/40 , G06F40/00 , G06F40/20 , H04L29/12 , G06F17/60
摘要： A computer implemented method of establishing a communication link between a user computer and a destination website over a world wide web network, comprising: receiving at a computer a universal resource locator of said destination website, said universal resource locator having a native language domain name that comprises at least one non-alphanumeric character: converting in a processor each of said at least one non-alphanumeric character to a corresponding alphanumeric character to produce an alphanumeric domain name; performing a domain name server inquiry using said alphanumeric domain name to obtain an Internet Protocol (IP) address of said destination website; and establishing said communication link between said user computer and said destination website using said Internet Protocol (IP) address.

3. 发明专利

SE0201170L 未知
公开(公告)号：SE0201170L
公开(公告)日：2002-06-20
申请号：SE0201170
申请日：2002-04-18
申请人： KI SEOK KIM , JIYUL YOO
发明人： KIM KI SEOK , YOO JIYUL
IPC分类号： G06F17/00 , G06Q50/00 , G06F17/40 , G06F40/00 , G06F40/20 , H04L29/12 , G06F17/60
摘要： A computer implemented method of establishing a communication link between a user computer and a destination website over a world wide web network, comprising: receiving at a computer a universal resource locator of said destination website, said universal resource locator having a native language domain name that comprises at least one non-alphanumeric character: converting in a processor each of said at least one non-alphanumeric character to a corresponding alphanumeric character to produce an alphanumeric domain name; performing a domain name server inquiry using said alphanumeric domain name to obtain an Internet Protocol (IP) address of said destination website; and establishing said communication link between said user computer and said destination website using said Internet Protocol (IP) address.

4. 发明专利

SE0201170D0 未知
公开(公告)号：SE0201170D0
公开(公告)日：2002-04-18
申请号：SE0201170
申请日：2002-04-18
申请人： KI SEOK KIM , JIYUL YOO
发明人： KIM KI SEOK , YOO JIYUL
IPC分类号： G06F17/00 , G06Q50/00 , G06F17/40 , G06F40/00 , G06F40/20 , H04L29/12 , G06F
摘要： A computer implemented method of establishing a communication link between a user computer and a destination website over a world wide web network, comprising: receiving at a computer a universal resource locator of said destination website, said universal resource locator having a native language domain name that comprises at least one non-alphanumeric character: converting in a processor each of said at least one non-alphanumeric character to a corresponding alphanumeric character to produce an alphanumeric domain name; performing a domain name server inquiry using said alphanumeric domain name to obtain an Internet Protocol (IP) address of said destination website; and establishing said communication link between said user computer and said destination website using said Internet Protocol (IP) address.

5. 发明授权

US10177279B2 Light-emitting diode with multiple N contact structure 有权
公开(公告)号：US10177279B2
公开(公告)日：2019-01-08
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
发明人： Tae Yeon Seong , Ki Seok Kim , Junyong Jin
IPC分类号： H01L33/10 , H01L33/38 , H01L33/24
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

6. 发明申请

US20170352784A1 LIGHT-EMITTING DIODE WITH MULTIPLE N CONTACT STRUCTURE 审中-公开
公开(公告)号：US20170352784A1
公开(公告)日：2017-12-07
申请号：US15608141
申请日：2017-05-30
申请人： Tae Yeon SEONG , Ki Seok KIM , Junyong JIN
发明人： Tae Yeon SEONG , Ki Seok KIM , Junyong JIN
IPC分类号： H01L33/32 , H01L33/38 , H01L33/00 , H01L33/10
CPC分类号： H01L33/382 , H01L33/10 , H01L33/24 , H01L2933/0016
摘要： Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.

7. 发明授权

US09034676B2 Method of fabricating vertical type light-emitting diode and method of separating layers from each other 有权
标题翻译：制造垂直型发光二极管的方法和将层分离的方法
公开(公告)号：US09034676B2
公开(公告)日：2015-05-19
申请号：US13696490
申请日：2010-07-22
申请人： Ki-Seok Kim , Gun-Young Jung
发明人： Ki-Seok Kim , Gun-Young Jung
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079
摘要： The present invention provides a method of fabricating a vertical type light-emitting diode and a method of separating layers from each other. Crystalline rods are provided on a lower layer or a lower substrate. The crystalline rods comprise ZnO. A layer which constitutes light-emitting diode or a light-emitting diode structure is formed on the crystalline rods, and the lower substrate is separated therefrom. The crystalline rods are dissolved during the separation. The formation of the crystalline rods is achieved by the formation of a seed layer and selective growth based on the seed layer.
摘要翻译：本发明提供一种垂直型发光二极管的制造方法和将层分离的方法。结晶棒设置在下层或下基板上。结晶棒包含ZnO。在结晶棒上形成发光二极管或发光二极管结构的层，并将下基板分离。结晶棒在分离过程中溶解。结晶棒的形成通过形成种子层和基于种子层的选择性生长来实现。

8. 发明申请

US20140367720A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20140367720A1
公开(公告)日：2014-12-18
申请号：US14300642
申请日：2014-06-10
申请人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
发明人： Ki Seok KIM , Sang Seok LEE , Su Yeol LEE , Chan Mook LIM
IPC分类号： H01L33/42 , H01L33/40
CPC分类号： H01L33/42 , H01L33/38 , H01L33/405 , H01L33/46
摘要： A semiconductor light emitting device and method of manufacturing the semiconductor light emitting device are provided. The semiconductor light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The device may also includes a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer and having a pad region and a finger region extended from the pad region in one direction. The second electrode may include a transparent electrode part positioned on the second conductivity type semiconductor layer and including at least one opening therein, at least one reflective part spaced apart from the transparent electrode part within the opening and disposed in the pad region and the finger region, and a bonding part positioned on at least one portion of the reflective part and including a plurality of bonding finger parts spaced apart from each other in the finger region and a bonding pad part disposed in the pad region.
摘要翻译：提供半导体发光器件和制造半导体发光器件的方法。半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。该器件还可以包括连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极，并且具有在一个方向上从焊盘区域延伸的焊盘区域和手指区域。第二电极可以包括位于第二导电类型半导体层上并且包括其中的至少一个开口的透明电极部分，至少一个反射部分与开口内的透明电极部分间隔开并且设置在焊盘区域中，并且指状区域以及位于所述反射部分的至少一部分上并且包括在所述手指区域中彼此间隔开的多个接合指状部分的接合部分和设置在所述焊盘区域中的接合焊盘部分。

9. 发明授权

US08877542B2 Nanostructure array substrate, method for fabricating the same and dye-sensitized solar cell using the same 有权
标题翻译：纳米结构阵列基板，其制造方法和使用其的染料敏化太阳能电池
公开(公告)号：US08877542B2
公开(公告)日：2014-11-04
申请号：US13325505
申请日：2011-12-14
申请人： Gun Young Jung , Hui Song , Ki Seok Kim
发明人： Gun Young Jung , Hui Song , Ki Seok Kim
IPC分类号： H01L31/18 , H01M14/00 , H01G9/20
CPC分类号： H01M14/005 , H01G9/2031 , H01G9/2036 , H01G9/204 , Y02E10/542
摘要： Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.
摘要翻译：公开了纳米结构阵列基板，其制造方法和使用该染料敏化太阳能电池的染料敏化太阳能电池。纳米结构阵列衬底包括在衬底上垂直对准的多个金属氧化物纳米结构，同时彼此分离。金属氧化物纳米结构包括具有ZnO核/ TiO 2壳结构或TiO 2纳米管的纳米棒。该方法包括以下步骤：从形成在衬底上的晶种层垂直取向的ZnO纳米棒; 并在ZnO纳米棒上涂覆TiO 2溶胶并烧结ZnO纳米棒以形成具有ZnO核/ TiO2壳结构的纳米棒。确保了基材的透明性和柔韧性。如果在染料敏化太阳能电池的光电极中使用纳米结构阵列基板，则太阳能电池的光电转换效率得到改善。

10. 发明授权

US08637186B2 Electrode for battery and method for manufacturing thereof 失效
标题翻译：电池用电极及其制造方法
公开(公告)号：US08637186B2
公开(公告)日：2014-01-28
申请号：US13326796
申请日：2011-12-15
申请人： Won-Bae Kim , Gun-Young Jung , Sang-Hoon Nam , Ki-Seok Kim
发明人： Won-Bae Kim , Gun-Young Jung , Sang-Hoon Nam , Ki-Seok Kim
IPC分类号： H01M4/00
CPC分类号： H01M4/0492 , B82Y30/00 , H01B1/122 , H01M4/386 , H01M10/052
摘要： An electrode for a battery and a method for manufacturing the same are disclosed. The electrode for a battery according to the present invention comprising silicon nanostructures integrally formed on a silicon thin film and having a period array can reduce the internal resistance, have better charge transport properties, and reduce the structural stress, thereby exhibiting high storage capacity, high efficiency charge/discharge characteristics, and long charge/discharge cycle characteristics. Moreover, the method for manufacturing the electrode for a battery according to the present invention can simply and easily form a nanopattern with nanostructures on a silicon thin film using laser interference lithography (LIL) and dry etching.
摘要翻译：公开了一种电池用电极及其制造方法。根据本发明的电池用电极，其一体形成在硅薄膜上并具有周期阵列的硅纳米结构体可以降低内阻，具有更好的电荷传输性能，并且降低结构应力，从而表现出高存储容量，高效率充放电特性，长充电/放电循环特性。此外，根据本发明的电池用电极的制造方法可以简单且容易地使用激光干涉光刻（LIL）和干蚀刻在硅薄膜上形成具有纳米结构的纳米图案。

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