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1. 发明申请

US20080048206A1 VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：立式氮化镓系发光二极管及其制造方法
公开(公告)号：US20080048206A1
公开(公告)日：2008-02-28
申请号：US11742818
申请日：2007-05-01
申请人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
发明人： Su Yeol LEE , Bang Won OH , Doo Go BAIK , Tae Sung JANG , Jong Gun WOO , Seok Beom CHOI , Sang Ho YOON , Dong Woo KIM , In Tae YEO
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/387 , H01L33/20 , H01L33/22 , H01L33/405 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.
摘要翻译：制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

2. 发明申请

US20110053298A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20110053298A1
公开(公告)日：2011-03-03
申请号：US12909297
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/22 , H01L33/48
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

3. 发明申请

US20080042149A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20080042149A1
公开(公告)日：2008-02-21
申请号：US11692568
申请日：2007-03-28
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

4. 发明申请

US20110033965A1 VERTICAL NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：垂直氮化物半导体发光二极管及其制造方法
公开(公告)号：US20110033965A1
公开(公告)日：2011-02-10
申请号：US12909204
申请日：2010-10-21
申请人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
发明人： Sang Ho YOON , Su Yeol LEE , Doo Go BAIK , Seok Beom CHOI , Tae Sung JANG , Jong Gun WOO
IPC分类号： H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20
摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
摘要翻译：垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。与n电极接触的n型氮化物半导体层的表面是平坦的。

5. 发明申请

US20100133570A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100133570A1
公开(公告)日：2010-06-03
申请号：US12620928
申请日：2009-11-18
申请人： Tae Sung JANG , Su Yeol Lee , Jong Gun Woo
发明人： Tae Sung JANG , Su Yeol Lee , Jong Gun Woo
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/20 , H01L33/22
摘要： Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.
摘要翻译：公开了一种半导体发光器件及其制造方法。半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

6. 发明申请

US20120080707A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120080707A1
公开(公告)日：2012-04-05
申请号：US13251897
申请日：2011-10-03
申请人： Tae Sung JANG , Seok Min Hwang , Su Yeol Lee , Jong Gun Woo
发明人： Tae Sung JANG , Seok Min Hwang , Su Yeol Lee , Jong Gun Woo
IPC分类号： H01L33/60 , H01L33/42
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/38 , H01L33/42 , H01L2933/0016 , H01L2933/0091
摘要： There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.
摘要翻译：提供了具有第一导电类型半导体层的半导体发光器件及其制造方法，形成在所述第一导电类型半导体层上的有源层; 形成在有源层上并包括多个孔的第二导电类型半导体层; 以及形成在第二导电类型半导体层上的透明电极。

7. 发明申请

US20110210351A1 SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有多细胞阵列的半导体发光器件及其制造方法
公开(公告)号：US20110210351A1
公开(公告)日：2011-09-01
申请号：US13034136
申请日：2011-02-24
申请人： Je Won KIM , Tae Sung JANG , Jong Gun WOO , Jong Ho LEE
发明人： Je Won KIM , Tae Sung JANG , Jong Gun WOO , Jong Ho LEE
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , H01L27/156 , H01L33/50 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.
摘要翻译：一种半导体发光器件，包括：衬底; 布置在基板上的多个发光单元，每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层，以发射蓝色光; 互连结构，将所述发光单元的所述第一导电型半导体层和所述第二导电型半导体层中的至少一个电连接到所述第一导电型半导体层和所述第二导电型半导体层中的至少一个，型半导体层; 以及形成在由所述多个发光单元限定的发光区域的至少一部分中的光转换部分，所述光转换部分包括具有红光转换材料的红光转换部分和绿光转换部分中的至少一个具有绿光转换材料的部分。

8. 发明申请

US20150126022A1 METHOD FOR FORMING ELECTRODE OF N-TYPE NITRIDE SEMICONDUCTOR, NITRIDE SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF 有权
标题翻译：形成N-型氮化物半导体的电极的方法，氮化物半导体器件及其制造方法
公开(公告)号：US20150126022A1
公开(公告)日：2015-05-07
申请号：US14336082
申请日：2014-07-21
申请人： Tae Hun KIM , Sung Joon KIM , Young Kyu SUNG , Wan Ho LEE , Tae Sung JANG , Tae Young PARK , Wan Tae LIM
发明人： Tae Hun KIM , Sung Joon KIM , Young Kyu SUNG , Wan Ho LEE , Tae Sung JANG , Tae Young PARK , Wan Tae LIM
IPC分类号： H01L21/223 , H01L21/285
CPC分类号： H01L21/2236 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32 , H01L33/40 , H01L2933/0016
摘要： According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.
摘要翻译：根据示例性实施例，一种方法包括通过用惰性气体等离子体处理n型氮化物半导体的表面来形成氮空位表面层，并且通过用氮气空隙表面层的表面处理形成添加氧的氮化物膜含氧气体等离子体，并在氧加成氮化物膜上形成电极。氮空位表层缺少氮元素。

9. 发明申请

US20120299040A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120299040A1
公开(公告)日：2012-11-29
申请号：US13478849
申请日：2012-05-23
申请人： Tae Hun KIM , Seung Wan CHAE , Yong Il KIM , Seung Jae LEE , Tae Sung JANG , Jong Rak SOHN , Bo Kyoung KIM
发明人： Tae Hun KIM , Seung Wan CHAE , Yong Il KIM , Seung Jae LEE , Tae Sung JANG , Jong Rak SOHN , Bo Kyoung KIM
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L33/46 , H01L33/20 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265 , H01L2224/83385 , H01L2924/00014 , H01L2924/00
摘要： There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer.
摘要翻译：提供了一种半导体发光器件，包括：透光衬底; 发光部分; 分别与第一和第二导电类型半导体层电连接的第一和第二电极; 以及包括反射金属层的后反射部分和介于透光基板和反射金属层之间的透光电介质层。

10. 发明申请

US20120181570A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120181570A1
公开(公告)日：2012-07-19
申请号：US13347094
申请日：2012-01-10
申请人： Hyung Duk KO , Yung Ho RYU , Tae Sung JANG
发明人： Hyung Duk KO , Yung Ho RYU , Tae Sung JANG
IPC分类号： H01L33/36 , H01L33/52
CPC分类号： H01L33/44 , H01L33/20 , H01L33/38
摘要： A semiconductor light emitting device and a fabrication method thereof are provided. The semiconductor light emitting device includes: a light-transmissive substrate including opposed first and second main planes and having prominences and depressions formed on at least one of the first and second main planes thereof; a light emitting structure formed on the first main plane of the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive layer; a first electrode structure connected to the first conductive semiconductor layer; a second electrode structure connected to the second conductive semiconductor layer.
摘要翻译：提供了一种半导体发光器件及其制造方法。半导体发光器件包括：透光基板，包括相对的第一和第二主平面，并且在其第一和第二主平面中的至少一个上形成突起和凹陷; 形成在所述基板的所述第一主平面上并且包括第一导电半导体层，有源层和第二导电层的发光结构; 连接到第一导电半导体层的第一电极结构; 连接到第二导电半导体层的第二电极结构。

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