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1. 发明授权

US06830702B2 Single trench alternating phase shift mask fabrication 失效
标题翻译：单沟槽交变相移掩模制造
公开(公告)号：US06830702B2
公开(公告)日：2004-12-14
申请号：US10165028
申请日：2002-06-07
申请人： San-De Tzu , Chang-Ming Dai , Chung-Hsing Chang , Chen-Hao Hsieh
发明人： San-De Tzu , Chang-Ming Dai , Chung-Hsing Chang , Chen-Hao Hsieh
IPC分类号： B44C122
CPC分类号： C03C17/3605 , C03C17/36 , C03C2218/33 , C23F4/00 , G03F1/30
摘要： The invention relates to fabricating a single-trench alternating phase shift mask (PSM). A chromium layer over a mask layer, which is itself over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer and the quartz layer are dry etched through a photoresist layer that has been applied over the chromium layer and patterned according to an alternating PSM design. The dry etching initially forms single trenches of the PSM. The quartz layer is next wet etched through the mask layer to completely form the single trenches of the PSM, where the photoresist layer has first been removed. The mask layer is dry etched again, where the single trenches of the PSM are initially filled with filler material to protect the single trenches from the dry etching.
摘要翻译：本发明涉及制造单沟槽交替相移掩模（PSM）。根据半导体设计对PSM上的掩模层上的铬层本身在石英层上进行图案化。掩模层和石英层通过已经施加在铬层上并且根据交替的PSM设计被图案化的光致抗蚀剂层被干蚀刻。干蚀刻最初形成PSM的单个沟槽。接着通过掩模层湿法蚀刻石英层，以完全形成PSM的单个沟槽，其中光致抗蚀剂层首先被去除。再次对掩模层进行干蚀刻，其中PSM的单个沟槽最初用填充材料填充，以保护单个沟槽免受干蚀刻。

2. 发明授权

US06830853B1 Chrome mask dry etching process to reduce loading effect and defects 失效
标题翻译：镀铬掩模干蚀刻工艺，减少加载效应和缺陷
公开(公告)号：US06830853B1
公开(公告)日：2004-12-14
申请号：US10213609
申请日：2002-08-07
申请人： San-De Tzu , Sheng-Chi Chin , Chung-Hsing Chang , Hsin-Chang Li
发明人： San-De Tzu , Sheng-Chi Chin , Chung-Hsing Chang , Hsin-Chang Li
IPC分类号： G03F900
CPC分类号： G03F1/80 , G03F1/50 , G03F7/0035
摘要： A method of forming photomasks is described which provides good critical dimension control for critical pattern elements and provides good throughput and low defect levels for etching relatively large areas of opaque material. The pattern is first modified to form a frame around the pattern elements which require good critical dimension control. The opaque material, such as chrome, in this frame is then etched away using dry anisotropic etching. The dry anisotropic etching provides good critical dimension control. The remainder of the opaque material to be removed is then etched away using wet isotropic etching. The wet isotropic etching provides good defect control in this region of the mask and good throughput. This method provides good critical dimension control at the edges of the pattern elements, good throughput in mask fabrication, and good defect level control in removing the relatively large areas of opaque material which do not affect critical dimension control.
摘要翻译：描述了形成光掩模的方法，其为关键图案元件提供了良好的临界尺寸控制，并提供了良好的生产量和低缺陷水平，用于蚀刻相对大面积的不透明材料。该图案首先被修改以在需要良好临界尺寸控制的图案元素周围形成框架。然后使用干各向异性蚀刻将不透明材料（例如铬）在该框架中蚀刻掉。干式各向异性蚀刻提供了良好的临界尺寸控制。然后使用湿各向同性蚀刻将待除去的不透明材料的其余部分蚀刻掉。湿式各向同性蚀刻在掩模的该区域中提供良好的缺陷控制，并且具有良好的通量。该方法在图案元件的边缘提供了良好的临界尺寸控制，在掩模制造中具有良好的吞吐量，并且在去除不影响临界尺寸控制的相对较大面积的不透明材料方面进行了良好的缺陷水平控制。

3. 发明授权

US07033947B2 Dual trench alternating phase shift mask fabrication 失效
标题翻译：双沟槽交变相移掩模制造
公开(公告)号：US07033947B2
公开(公告)日：2006-04-25
申请号：US10385764
申请日：2003-03-11
申请人： San-De Tzu , Ming-Shuo Yen , Chung-Hsing Chang
发明人： San-De Tzu , Ming-Shuo Yen , Chung-Hsing Chang
IPC分类号： H01L21/302
CPC分类号： G03F1/30
摘要： Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.
摘要翻译：公开了制造双沟道交替相移掩模（PSM）。根据半导体设计对PSM之上的掩模层上的铬层在石英层上进行图案化。根据PSM设计的深沟槽对掩模层进行干蚀刻。通过施加在铬层上的第一光致抗蚀剂层将石英层干蚀刻第一次，并通过使用背面紫外线曝光根据PSM设计的深沟槽进行图案化。根据PSM设计的浅沟槽，再次对掩模层进行干蚀刻。通过施加在铬层上的第二光致抗蚀剂层将石英层干蚀刻第二次，并通过使用背面紫外线曝光根据PSM设计的浅沟槽进行图案化。

4. 发明授权

US07013453B2 Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution ERA 失效
标题翻译：全尺寸散射棒alt-PSM技术用于分辨率ERA中的IC制造
公开(公告)号：US07013453B2
公开(公告)日：2006-03-14
申请号：US10781176
申请日：2004-02-18
申请人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
发明人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/32 , G03F1/30 , G03F1/70 , G03F7/2026
摘要： A process is described for shrinking gate lengths and poly interconnects simultaneously during the fabrication of an integrated circuit. A positive tone photoresist is coated on a substrate and is first exposed with an alternating phase shift mask that has full size scattering bars which enable a gate dimension to be printed that is ¼ to ½ the size of the exposing wavelength. The substrate is then exposed using a tritone attenuated phase shift mask with a chrome blocking area to protect the shrunken gates and attenuated areas with scattering bars for shrinking the interconnect lines. Scattering bars are not printed in the photoresist pattern. The process affords higher DOF, lower OPE, and less sensitivity to lens aberrations than conventional lithography methods. A data processing flow is provided which leads to a modified GDS layout for each of the two masks. A system for producing phase shifting layout data is also included.
摘要翻译：描述了在制造集成电路期间同时缩小栅极长度和多晶硅互连的工艺。正色调光致抗蚀剂涂覆在基板上，并且首先用具有全尺寸散射条的交替相移掩模曝光，这使得栅极尺寸能够被印刷为曝光波长尺寸的1/4至1/2。然后使用具有镀铬阻挡区域的三次衰减相移掩模将衬底曝光，以保护收缩的栅极和具有散射棒的衰减区域以收缩互连线。散射棒不会印在光刻胶图案中。该方法比常规光刻方法提供更高的DOF，更低的OPE和更低的对透镜像差的灵敏度。提供了数据处理流程，其导致针对两个掩模中的每一个的修改的GDS布局。还包括用于生成相移布局数据的系统。

5. 发明授权

US07131102B2 Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era 有权
公开(公告)号：US07131102B2
公开(公告)日：2006-10-31
申请号：US10782670
申请日：2004-02-19
申请人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
发明人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/32 , G03F1/30 , G03F1/70 , G03F7/2026
摘要： A process is described for shrinking gate lengths and poly interconnects simultaneously during the fabrication of an integrated circuit. A positive tone photoresist is coated on a substrate and is first exposed with an alternating phase shift mask that has full size scattering bars which enable a gate dimension to be printed that is ¼ to ½ the size of the exposing wavelength. The substrate is then exposed using a tritone attenuated phase shift mask with a chrome blocking area to protect the shrunken gates and attenuated areas with scattering bars for shrinking the interconnect lines. Scattering bars are not printed in the photoresist pattern. The process affords higher DOF, lower OPE, and less sensitivity to lens aberrations than conventional lithography methods. A data processing flow is provided which leads to a modified GDS layout for each of the two masks. A system for producing phase shifting layout data is also included.

6. 发明授权

US07036108B2 Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era 有权
标题翻译：全尺寸散射棒alt-PSM技术用于分辨率时代的IC制造
公开(公告)号：US07036108B2
公开(公告)日：2006-04-25
申请号：US10781182
申请日：2004-02-18
申请人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
发明人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/32 , G03F1/30 , G03F1/70 , G03F7/2026
摘要： A process is described for shrinking gate lengths and poly interconnects simultaneously during the fabrication of an integrated circuit. A positive tone photoresist is coated on a substrate and is first exposed with an alternating phase shift mask that has full size scattering bars which enable a gate dimension to be printed that is ¼ to ½ the size of the exposing wavelength. The substrate is then exposed using a tritone attenuated phase shift mask with a chrome blocking area to protect the shrunken gates and attenuated areas with scattering bars for shrinking the interconnect lines. Scattering bars are not printed in the photoresist pattern. The process affords higher DOF, lower OPE, and less sensitivity to lens aberrations than conventional lithography methods. A data processing flow is provided which leads to a modified GDS layout for each of the two masks. A system for producing phase shifting layout data is also included.
摘要翻译：描述了在制造集成电路期间同时缩小栅极长度和多晶硅互连的工艺。正色调光致抗蚀剂涂覆在基板上，并且首先用具有全尺寸散射条的交替相移掩模曝光，这使得栅极尺寸能够被印刷为曝光波长尺寸的1/4至1/2。然后使用具有镀铬阻挡区域的三次衰减相移掩模将衬底曝光，以保护收缩的栅极和具有散射棒的衰减区域以收缩互连线。散射棒不会印在光刻胶图案中。该方法比常规光刻方法提供更高的DOF，更低的OPE和更低的对透镜像差的灵敏度。提供了数据处理流程，其导致针对两个掩模中的每一个的修改的GDS布局。还包括用于生成相移布局数据的系统。

7. 发明授权

US06711732B1 Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era 失效
公开(公告)号：US06711732B1
公开(公告)日：2004-03-23
申请号：US10205790
申请日：2002-07-26
申请人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
发明人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
IPC分类号： G06F1750
CPC分类号： G03F1/32 , G03F1/30 , G03F1/70 , G03F7/2026
摘要： A process is described for shrinking gate lengths and poly interconnects simultaneously during the fabrication of an integrated circuit. A positive tone photoresist is coated on a substrate and is first exposed with an alternating phase shift mask that has full size scattering bars which enable a gate dimension to be printed that is ¼ to ½ the size of the exposing wavelength. The substrate is then exposed using a tritone attenuated phase shift mask with a chrome blocking area to protect the shrunken gates and attenuated areas with scattering bars for shrinking the interconnect lines. Scattering bars are not printed in the photoresist pattern. The process affords higher DOF, lower OPE, and less sensitivity to lens aberrations than conventional lithography methods. A data processing flow is provided which leads to a modified GDS layout for each of the two masks. A system for producing phase shifting layout data is also included.

8. 发明授权

US08699974B2 Wideband transmitter front-end 有权
标题翻译：宽带发射机前端
公开(公告)号：US08699974B2
公开(公告)日：2014-04-15
申请号：US13363056
申请日：2012-01-31
申请人： Shih Hsiung Mo , Yan Cui , Chung-Hsing Chang
发明人： Shih Hsiung Mo , Yan Cui , Chung-Hsing Chang
IPC分类号： H04B1/04 , H04K3/00
CPC分类号： H04B1/04 , H03F1/223 , H03F3/193 , H03F3/211 , H03F3/24 , H03F3/245 , H03F3/72 , H03F2203/7209 , H04B2001/0408 , H04L27/0002
摘要： One embodiment of the present invention provides a transmitter for wireless communication. The transmitter includes a wideband tunable modulator, a number of power amplifiers with a particular power amplifier associated with a particular frequency range, and a wideband power amplifier (PA) driver. The PA driver is configured to receive an output signal from the wideband tunable modulator, amplify the output signal, and send the amplified output signal to at least one of the power amplifiers.
摘要翻译：本发明的一个实施例提供了一种用于无线通信的发射机。发射机包括宽带可调调制器，具有与特定频率范围相关联的特定功率放大器的多个功率放大器以及宽带功率放大器（PA）驱动器。 PA驱动器被配置为从宽带可调调制器接收输出信号，放大输出信号，并将放大的输出信号发送到至少一个功率放大器。

9. 发明申请

US20110285359A1 Charging Method And Charging Device For Charging A Rechargeable Battery 失效
标题翻译：充电方法和充电装置为充电电池充电
公开(公告)号：US20110285359A1
公开(公告)日：2011-11-24
申请号：US12785145
申请日：2010-05-21
申请人： Chung-Hsing Chang , Wen-Yi Chen , Chia-Liang Lin
发明人： Chung-Hsing Chang , Wen-Yi Chen , Chia-Liang Lin
IPC分类号： H02J7/04
CPC分类号： H02J7/0083
摘要： A charging method fit for use with and applicable to a rechargeable battery is provided. The charging method involves charging the rechargeable battery to a first preset voltage and then charging the rechargeable battery to a second preset voltage. The charging method includes the steps of: (a) using the first preset current as a charging current, and performing the constant current charging of the rechargeable battery by the first preset current until the rechargeable battery reaches the first preset voltage for the first instance; (b) subtracting a current difference value from the charging current used by the rechargeable battery to reach the first preset voltage in the preceding instance so as to obtain a new charging current, and performing the constant current charging of the rechargeable battery by the new charging current thus obtained until the rechargeable battery reaches the first preset voltage again; (c) repeating step (b) until the new charging current equals a second preset current; and step (d) using the second preset current of step (c) as another new charging current, and performing the constant current charging of the rechargeable battery by the second preset current until the rechargeable battery reaches a second preset voltage for the first instance.
摘要翻译：提供适用于可充电电池的充电方法。充电方法包括将可再充电电池充电到第一预设电压，然后将可再充电电池充电到第二预设电压。充电方法包括以下步骤：（a）使用第一预置电流作为充电电流，并且通过第一预设电流执行可再充电电池的恒定电流充电直到可再充电电池首次达到第一预置电压; （b）从先前的例子中减去由可再充电电池使用的充电电流达到第一预设电压的电流差值，以获得新的充电电流，并通过新充电来执行可再充电电池的恒定电流充电直到可再充电电池再次达到第一预置电压为止; （c）重复步骤（b），直到新的充电电流等于第二预设电流; 和步骤（d）使用步骤（c）的第二预设电流作为另一新的充电电流，并且通过第二预设电流执行可再充电电池的恒定电流充电，直到可再充电电池达到第一预定电压为止。

10. 发明授权

US07263080B1 Architecture of an integrated circuit for streaming media over wireless networks 失效
标题翻译：无线网络流媒体集成电路架构
公开(公告)号：US07263080B1
公开(公告)日：2007-08-28
申请号：US11279881
申请日：2006-04-15
申请人： Robin Yubin Zhu , Chung-Hsing Chang , Ted Hsiung
发明人： Robin Yubin Zhu , Chung-Hsing Chang , Ted Hsiung
IPC分类号： H04Q7/00
CPC分类号： H04L1/0054 , H04L1/0065 , H04L27/2628 , H04L27/2647 , H04W88/06
摘要： An integrated circuit for streaming media over wireless networks is disclosed. The integrated circuit includes a media module that is designed to process media data. When non-media data is in, switching means is provided to avoid the non-media data being processed in the media module. One of important features in the integrated circuit is the underlying designs that are capable of facilitating wireless communication in different wireless networks. In one embodiment, a baseband processor is provided to facilitate wireless communications in more than one standard. The baseband processor is uniquely designed to facilitate wireless communications in a Wi-Fi network as well as a WiMAX network. As a result, same chips may be used to stream media data across different wireless networks.
摘要翻译：公开了一种用于通过无线网络流媒体的集成电路。集成电路包括被设计为处理媒体数据的媒体模块。当非媒体数据进入时，提供切换装置以避免在媒体模块中处理非媒体数据。集成电路的重要特征之一是能够促进不同无线网络中的无线通信的底层设计。在一个实施例中，提供基带处理器以促进多于一个标准中的无线通信。基带处理器是独特的设计，以促进Wi-Fi网络以及WiMAX网络中的无线通信。因此，可以使用相同的芯片来跨越不同的无线网络流媒体数据。

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