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1. 发明授权

EP1523096B1 Method for manufacturing a film bulk acoustic resonator 有权转让
标题翻译：一种用于制造声体波与Filmresonator过程
公开(公告)号：EP1523096B1
公开(公告)日：2013-08-14
申请号：EP04255089.7
申请日：2004-08-24
申请人： Samsung Electronics Co., Ltd.
发明人： Ha, Byeoung-ju 507-1401, Samsung 5th Apt. , Park, Yun-kwon , Song, In-sang , Song, Il-jong , Kim, Jong-seok 101-202 Hyundai Apt. , Kim, Duck-hwan 601-909 Hanyang Apartment , Hwang, Jun-sik 301-1402 Hanwha Apartment
IPC分类号： H03H9/17 , H03H9/02 , H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H2003/021 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49135 , Y10T29/49155

2. 发明授权

EP1355162B1 RF power sensor for measuring an RF signal power using capacitance 失效转让
标题翻译：电容性操作的RF功率传感器，用于测量的信号的RF功率
公开(公告)号：EP1355162B1
公开(公告)日：2010-08-18
申请号：EP03008483.4
申请日：2003-04-11
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Shim, Dong-ha , Song, In-sang , Kim, Young-il , Park, Sun-hee , Hong, Young-tack , Min, Dong-ki
IPC分类号： G01R21/00 , G01R1/067
CPC分类号： G01R21/00 , G01R1/06772

3. 发明授权

EP1508936B1 Duplexer fabrication method using embedded PCB and duplexer fabricated by the same 有权
标题翻译：用于与嵌入式板双工器和此作为双工器的制造工艺
公开(公告)号：EP1508936B1
公开(公告)日：2009-04-22
申请号：EP04253883.5
申请日：2004-06-29
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hwang, Jun-sik , Park, Yun-kwon , Song, In-sang , Ha, Byeoung-ju, 507-1401 Samsung 5th Apartment
IPC分类号： H01P1/213
CPC分类号： H03H9/706 , H01L2224/16235 , H01L2224/81192 , H01L2924/15313 , H01L2924/16251 , H01P1/213 , H03H9/0571 , H05K1/0243 , H05K1/162 , H05K1/165 , H05K3/429 , H05K3/4652 , H05K2201/0959 , H05K2201/1006 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/4913 , Y10T29/49165

4. 发明公开

EP1793403A3 Mems Switch 审中-公开
标题翻译： MEMS开关
公开(公告)号：EP1793403A3
公开(公告)日：2009-01-21
申请号：EP06121184.3
申请日：2006-09-25
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Che-heung , Choi, Hyung 125-603, Sibeomdanji Hansin Apt. , Song, In-sang , Lee, Sang-hun , Kwon, Sang-wook
IPC分类号： H01H59/00 , H01H1/20
CPC分类号： H01H59/0009 , H01H1/20
摘要： A MEMS (micro electro mechanical system) switch, which includes a substrate; a fixed electrode formed on an upper side of the substrate; a signal line formed on both sides of the fixed electrode; a contact member formed on an upper side of the signal line at a distance from said fixed electrode and contacting an edging portion of the signal line; a supporting member supporting the contact member to be movable; and a moving electrode disposed on an upper side of the supporting member.

5. 发明公开

EP1840924A2 Piezoelectric MEMS switch and method of fabricating the same 审中-公开
标题翻译： Piezoelektrischer MEMS-Schalter und Herstellungsverfahrendafür
公开(公告)号：EP1840924A2
公开(公告)日：2007-10-03
申请号：EP07104235.2
申请日：2007-03-15
申请人： Samsung Electronics Co., Ltd.
发明人： Kim, Jong-seok , Song, In-sang , Lee, Sang-hun , Kwon, Sang-wook , Lee, Chang-seung , Hong, Young-tack , Kim, Che-heung
IPC分类号： H01H57/00
CPC分类号： H01H57/00 , H01H2057/006 , Y10T403/7026
摘要： A piezoelectric Micro Electro Mechanical System (MEMS) switch includes a substrate, first and second fixed signal lines symmetrically formed in a spaced-apart relation to each other on the substrate to have a predetermined gap therebetween, a piezoelectric actuator disposed in alignment with the first and the second fixed signal lines in the predetermined gap, and having a first end supported on the substrate to allow the piezoelectric actuator to be movable up and down, and a movable signal line having a first end connected to one of the first and the second fixed signal lines, and a second end configured to be in contact with, or separate from the other of the first and second fixed signal lines, the movable signal line at at least one side thereof being connected to an upper surface of the piezoelectric actuator.
摘要翻译：压电微电子机械系统（MEMS）开关包括基板（101），在基板上以彼此间隔开的关系对称地形成的第一和第二固定信号线（103,105），以在其间具有预定的间隙（G）压电致动器（130），其设置成与所述预定间隙（G）中的所述第一和第二固定信号线（103,105）对齐，并且具有支撑在所述基板（101）上的第一端，以允许所述压电致动器向上移动以及可移动信号线（150），其具有连接到第一和第二固定信号线中的一个的第一端，以及构造成与第一和第二固定信号线中的另一个接触或分离的第二端信号线，其至少一侧的可移动信号线连接到压电致动器（130）的上表面。

6. 发明公开

EP1748557A2 Integrated filter including FBAR and SAW resonator and fabrication method therefor 审中-公开
标题翻译：用Dünnschichtvolumenwellenresonator，表面声波谐振器及其制造方法集成滤波
公开(公告)号：EP1748557A2
公开(公告)日：2007-01-31
申请号：EP06012762.8
申请日：2006-06-21
申请人： Samsung Electronics Co., Ltd.
发明人： Nam, Kuang-woo , Sunwoo, Kook-hyun , Song, In-sang , Kwon, Sang-wook , Kim, Duck-hwan , Kim, Chul-soo , Sul, Sang-chul , Park, Yun-kwon , Park, Hae-seok , Shin, Jea-shik , Shim, Dong-ha , Hong, Young-tack , Kim, Jong-seok , Chang, Seok-mo , Yun, Seok-chul
IPC分类号： H03H9/58 , H03H3/02
CPC分类号： H03H9/588 , H03H3/02 , H03H9/02228 , H03H2003/0071
摘要： An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要翻译：集成滤波器包括薄膜体声谐振器（FBAR）和表面声波（SAW）谐振器和制造该集成滤波器的方法。该集成滤波器包括：衬底（110）; 在预定的第一电极（120）定位在所述基板的上表面的第一区域; 定位在所述第一电极上的第一压电体层（130）; 定位在所述第一压电层上的第二电极（150）; 在上基底的上表面的预定第二区域设置的第二压电体层（140）; 和至少一个叉指式换能器（IDT）电极（160,170）定位在所述第二压电体层上。 IDT电极包括：在所述第二压电体层上的梳状结构形成的第一IDT电极（160）; 和在梳状结构形成的第二压电层上的第二IDT电极（170），以便与所述第一IDT电极啮合。所述第一和第二压电层中形成的相同材料构成。因此，为了集成滤波器在各频段其操作变得紧凑。

7. 发明公开

EP1598933A1 Air-gap type thin-film bulk acoustic resonator and fabrication method therefor 有权
标题翻译： AkustischerDünnschicht-Volumenwellenresonator des Luftspalttyps und dessen Herstellungsverfahren
公开(公告)号：EP1598933A1
公开(公告)日：2005-11-23
申请号：EP05253013.6
申请日：2005-05-17
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Song, In-sang , Ha, Byeoung-ju 507-1401 Samsung 5th Apt. , Park, Yun-kwon , Kim, Jong-seok
IPC分类号： H03H9/17 , H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H2003/021 , Y10T29/42
摘要： An air-gap type thin-film bulk acoustic resonator has a substrate having a cavity formed on a predetermined portion of an upper surface thereof; a resonance part having a structure of a first electrode, a piezoelectric substance, and a second electrode deposited in order and formed over the upper side of the cavity; and at least one via hole penetrating a lower surface of the substrate and connecting to the cavity.
摘要翻译：气隙式薄膜体声波谐振器具有形成在其上表面的预定部分上的空腔的基板; 具有第一电极，压电物质和第二电极的结构的共振部分，其依次沉积并形成在空腔的上侧上; 以及至少一个通孔穿过基板的下表面并连接到空腔。

8. 发明公开

EP1469599A3 Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof 有权
标题翻译： Dünnschicht-Resonator von Luftspaltbauart，Duplexer mit dem Resonator und deren Herstellungsverfahren
公开(公告)号：EP1469599A3
公开(公告)日：2005-05-18
申请号：EP04252170.8
申请日：2004-04-14
申请人： Samsung Electronics Co., Ltd.
发明人： Park, Yun-Kwon , Song, In-sang , Ha, Byeoung-ju , Song, II-jong , Kim, Duck-hwan
IPC分类号： H03H9/17 , H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H9/0571 , H03H9/587 , H03H9/706 , Y10T29/42
摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.
摘要翻译：气隙型膜体声波谐振器（FBAR）是通过固定两个基板部分而形成的，一个提供谐振结构，另一个提供分离结构，即空腔。当固定两个基板部分时，共振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔以及形成在空腔之间的隔离部分。谐振结构和腔的独立创建都简化了处理，并允许额外的元件容易地集成在空腔中。

9. 发明公开

EP1469599A2 Air gap type FBAR, duplexer using the FBAR, and fabricating methods thereof 有权
标题翻译：具有谐振器及其制造方法中的空气间隙型双工器的薄膜谐振器
公开(公告)号：EP1469599A2
公开(公告)日：2004-10-20
申请号：EP04252170.8
申请日：2004-04-14
申请人： Samsung Electronics Co., Ltd.
发明人： Park, Yun-Kwon , Song, In-sang , Ha, Byeoung-ju , Song, II-jong , Kim, Duck-hwan
IPC分类号： H03H9/17 , H03H3/02
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H9/0571 , H03H9/587 , H03H9/706 , Y10T29/42
摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

10. 发明公开

EP1344746A2 MEMS device and fabrication method thereof 有权
标题翻译： MEMS-Bauelemente und Verfahren zu deren Herstellung
公开(公告)号：EP1344746A2
公开(公告)日：2003-09-17
申请号：EP03251321.0
申请日：2003-03-05
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Lee, Eun-sung , Kim, Chung-woo , Song, In-sang , Kim, Jong-seok , Lee, Moon-chul
IPC分类号： B81C1/00 , B81B3/00
CPC分类号： B81B3/0078 , B81B2201/014 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81C2201/0107 , B81C2201/014 , H01H59/0009
摘要： A method for fabricating a MEMS device having a fixing part, driving part, electrode part, and contact parts on a substrate. A driving electrode is formed on the substrate, and then an insulation layer is formed thereon. The insulation layer is patterned, and the regions of the insulation layer in which the fixing part and the contact parts are formed are etched. A metal layer is formed on the substrate. The metal layer is planarized down to the insulation layer, and the driving electrode is formed. A sacrificial layer is formed on the substrate, and a groove-shaped space is formed in a region in which the fixing part is formed. A MEMS structure layer is formed on the sacrificial layer. Sidewalls are formed in the groove-shaped space, and the fixing part and driving part are formed, leaving the sacrificial layer underneath the fixing part.
摘要翻译：一种用于制造在基板上具有固定部分，驱动部分，电极部分和接触部分的MEMS器件的方法。在基板上形成驱动电极，然后在其上形成绝缘层。对绝缘层进行图案化，并且蚀刻形成有固定部和接触部的绝缘层的区域。在基板上形成金属层。金属层被平坦化到绝缘层，并且形成驱动电极。在基板上形成牺牲层，在形成固定部的区域形成有槽状的空间。在牺牲层上形成MEMS结构层。侧壁形成在槽形空间中，并且形成固定部分和驱动部分，在牺牲层之下留下固定部分。

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