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1. 发明授权

US06517592B2 Cold trap assembly 有权
标题翻译：冷阱装配
公开(公告)号：US06517592B2
公开(公告)日：2003-02-11
申请号：US09740120
申请日：2000-12-19
申请人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
IPC分类号： B01D4508
CPC分类号： B01D8/00 , C23C16/4412 , Y10S55/15 , Y10S55/30
摘要： A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.
摘要翻译：具有冷阱能力的温度控制排气组件。排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。另一个实施例包括紧凑的多阀单体设计，其包括用于简化闭环温度控制的单个加热器。冷阱包含一个加热器，用于在陷阱入口进行温度控制，以尽量减少不必要的沉积物。一个实施例还包括多级冷阱和颗粒捕集器。作为可拆卸单元，该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

2. 发明授权

US06206971B1 Integrated temperature controlled exhaust and cold trap assembly 有权
标题翻译：集成温度控制排气和冷阱组件
公开(公告)号：US06206971B1
公开(公告)日：2001-03-27
申请号：US09281998
申请日：1999-03-29
申请人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
IPC分类号： C23C1600
CPC分类号： B01D8/00 , C23C16/4412 , Y10S55/15 , Y10S55/30
摘要： A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.
摘要翻译：具有冷阱能力的温度控制排气组件。排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。另一个实施例包括紧凑的多阀单体设计，其包括用于简化闭环温度控制的单个加热器。冷阱包含一个加热器，用于在陷阱入口进行温度控制，以尽量减少不必要的沉积物。一个实施例还包括多级冷阱和颗粒捕集器。作为可拆卸单元，该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

3. 发明授权

US06364954B2 High temperature chemical vapor deposition chamber 有权
标题翻译：高温化学气相沉积室
公开(公告)号：US06364954B2
公开(公告)日：2002-04-02
申请号：US09211998
申请日：1998-12-14
申请人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4405 , C23C16/4412 , C23C16/45514 , C23C16/45574 , C23C16/4584 , C23C16/5096
摘要： An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200° C. to minimize undesirable deposits on the interior surfaces of the exhaust assembly.
摘要翻译：一种用于晶片处理的装置，其包括通过隔离销彼此热隔离的室主体和加热衬套。在晶片加工期间，例如通过四氯化钛和氨之间的热反应沉积氮化钛膜，通过加热的支撑基座将晶片基板加热至600-700℃范围内的反应温度。腔室衬里和内部室壁保持在150-250℃之间的温度，以防止在室内沉积不期望的副产物。这有助于室清洁程序，其可以使用原位氯基方法进行。加热的衬套和腔体之间的良好的隔热能使室外保持在60-65℃的安全工作温度。加热排气组件还与处理室结合使用以除去废气和反应副产品。使用外部加热器将排气组件保持在约150-200℃的温度下，以使排气组件的内表面上的不期望的沉积物最小化。

4. 发明申请

US20050205110A1 Method for front end of line fabrication 有权
标题翻译：前端制造方法
公开(公告)号：US20050205110A1
公开(公告)日：2005-09-22
申请号：US11137609
申请日：2005-05-24
申请人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei (Connie) Chou , Chiukin (Steven) Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong (John) Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52 , C25F1/00
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.
摘要翻译：提供了从衬底表面去除天然氧化物的方法。在至少一个实施例中，该方法包括将基板表面支撑在真空室中，并从室内的气体混合物产生反应物质。然后将衬底表面在腔室内冷却，并且反应物质被引导到冷却的衬底表面以与其上的天然氧化物反应并在衬底表面上形成膜。然后将衬底表面在室内加热以使膜蒸发。

5. 发明申请

US20080186022A1 METHOD AND APPARATUS FOR MEASURING OBJECT THICKNESS 有权
标题翻译：用于测量物体厚度的方法和装置
公开(公告)号：US20080186022A1
公开(公告)日：2008-08-07
申请号：US12099747
申请日：2008-04-08
申请人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
发明人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
IPC分类号： G01B7/06
CPC分类号： G01B7/105
摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.
摘要翻译：提供了一种用于测量被测物体的厚度的方法和装置。该装置包括具有第一和第二传感器头的涡流传感器。传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

6. 发明授权

US07355394B2 Apparatus and method of dynamically measuring thickness of a layer of a substrate 有权
标题翻译：动态测量衬底层厚度的装置和方法
公开(公告)号：US07355394B2
公开(公告)日：2008-04-08
申请号：US11522416
申请日：2006-09-18
申请人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu P. Gu , Joel Huston , Paul Smith , G. Lorimer Miller
发明人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu P. Gu , Joel Huston , Paul Smith , G. Lorimer Miller
IPC分类号： G01B7/06 , G01N27/72
CPC分类号： G01B7/105
摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.
摘要翻译：提供了一种用于测量被测物体的厚度的方法和装置。该装置包括具有第一和第二传感器头的涡流传感器。传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

7. 发明授权

US07777483B2 Method and apparatus for measuring a thickness of a layer of a wafer 有权
标题翻译：用于测量晶片层厚度的方法和装置
公开(公告)号：US07777483B2
公开(公告)日：2010-08-17
申请号：US12099747
申请日：2008-04-08
申请人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
发明人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
IPC分类号： G01B7/06 , G01N27/72
CPC分类号： G01B7/105
摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.
摘要翻译：提供了一种用于测量被测物体的厚度的方法和装置。该装置包括具有第一和第二传感器头的涡流传感器。传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

8. 发明申请

US20050230350A1 In-situ dry clean chamber for front end of line fabrication 审中-公开
标题翻译：用于前端制造的原位干洗室
公开(公告)号：US20050230350A1
公开(公告)日：2005-10-20
申请号：US11063645
申请日：2005-02-22
申请人： Chien-Teh Kao , Jing-Pei Chou , Chiukin Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
发明人： Chien-Teh Kao , Jing-Pei Chou , Chiukin Lai , Sal Umotoy , Joel Huston , Son Trinh , Mei Chang , Xiaoxiong Yuan , Yu Chang , Xinliang Lu , Wei Wang , See-Eng Phan
IPC分类号： H01L21/28 , C23C16/455 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/3205 , H01L21/8238 , H01L23/12 , H01L23/52
CPC分类号： H01L21/02104 , C23C14/022 , C23C14/50 , C23C14/541 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32862 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body and adapted to support a substrate thereon. The support assembly includes one or more fluid channels at least partially formed therein and capable of cooling the substrate. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a first electrode and a second electrode which define a plasma cavity therebetween, wherein the second electrode is adapted to connectively heat the substrate.
摘要翻译：提供了一种从衬底表面去除天然氧化物的方法和装置。在一个方面，腔室包括室主体和至少部分地设置在腔体内并适于在其上支撑衬底的支撑组件。支撑组件包括至少部分地形成在其中并能够冷却基底的一个或多个流体通道。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括在其间限定等离子体腔的第一电极和第二电极，其中第二电极适于连接地加热衬底。

9. 发明授权

US08216374B2 Gas coupler for substrate processing chamber 有权
标题翻译：用于衬底处理室的气体耦合器
公开(公告)号：US08216374B2
公开(公告)日：2012-07-10
申请号：US11614074
申请日：2006-12-20
申请人： Joel Huston , Jeffery Tobin , Christophe Marcadal
发明人： Joel Huston , Jeffery Tobin , Christophe Marcadal
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： F16L41/03 , H01L21/67017
摘要： A gas coupler is capable of conducting gas between a gas component, gas source and substrate processing chamber. The gas coupler comprises a metal block comprising a gas component seating surface having a plurality of gas component coupling ports. The block also has a plurality of sidewalls at right angles to the gas component seating surface, each sidewall comprising a counterbored gas orifice. A plurality of right-angled internal passageways are each connected to a gas component coupling port. Each internal passageway terminates at counterbored gas orifice on a different sidewall surface so that each gas component coupling port is fluidly connected to a different sidewall.
摘要翻译：气体耦合器能够在气体组分，气体源和衬底处理室之间传导气体。气体联接器包括金属块，其包括具有多个气体部件联接口的气体组分就座表面。该块还具有与气体组件就座表面成直角的多个侧壁，每个侧壁包括沉孔气孔。多个直角内部通道各自连接到气体部件联接口。每个内部通道终止在不同侧壁表面上的沉孔气孔处，使得每个气体部件联接口流体地连接到不同的侧壁。

10. 发明授权

US07112961B2 Method and apparatus for dynamically measuring the thickness of an object 有权
标题翻译：用于动态测量物体厚度的方法和装置
公开(公告)号：US07112961B2
公开(公告)日：2006-09-26
申请号：US10685210
申请日：2003-10-14
申请人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
发明人： Lawrence C. Lei , Siqing Lu , Yu Chang , Cecilia Martner , Quyen Pham , Yu Ping Gu , Joel Huston , Paul Smith , Gabriel Lorimer Miller
IPC分类号： G01B7/06 , G01N27/72
CPC分类号： G01B7/105
摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.
摘要翻译：提供了一种用于测量被测物体的厚度的方法和装置。该装置包括具有第一和第二传感器头的涡流传感器。传感器头被定位成在其间具有预定的间隙，以通过该测试对象的至少一部分通过间隙。当测试对象移动通过间隙时，传感器头在测试对象上的给定采样位置进行测量。该装置还包括位置检测机构，用于确定测试对象上的采样位置的位置。该装置还包括与涡流传感器和位置感测机构通信的评估电路，用于确定采样位置处的测试对象的厚度。

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