专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06364954B2 High temperature chemical vapor deposition chamber 有权
标题翻译：高温化学气相沉积室
公开(公告)号：US06364954B2
公开(公告)日：2002-04-02
申请号：US09211998
申请日：1998-12-14
申请人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Steve H. Chiao , Anh N. Nguyen , Be V. Vo , Joel Huston , James J. Chen , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/4401 , C23C16/4405 , C23C16/4412 , C23C16/45514 , C23C16/45574 , C23C16/4584 , C23C16/5096
摘要： An apparatus for wafer processing, which comprises a chamber body and a heated liner which are thermally isolated from each other by isolating pins. During wafer processing, e.g., deposition of titanium nitride film by thermal reaction between titanium tetrachloride and ammonia, a wafer substrate is heated to a reaction temperature in the range of 600-700° C. by a heated support pedestal. The chamber liner and the interior chamber walls are maintained at a temperature between 150-250° C. to prevent deposition of undesirable by-products inside the chamber. This facilitates the chamber cleaning procedure, which can be performed using an in-situ chlorine-based process. The excellent thermal isolation between the heated liner and the chamber body allows the chamber exterior to be maintained at a safe operating temperature of 60-65° C. A heated exhaust assembly is also used in conjunction with the process chamber to remove exhaust gases and reaction by-products. External heaters are used to maintain the exhaust assembly at a temperature of about 150-200° C. to minimize undesirable deposits on the interior surfaces of the exhaust assembly.
摘要翻译：一种用于晶片处理的装置，其包括通过隔离销彼此热隔离的室主体和加热衬套。在晶片加工期间，例如通过四氯化钛和氨之间的热反应沉积氮化钛膜，通过加热的支撑基座将晶片基板加热至600-700℃范围内的反应温度。腔室衬里和内部室壁保持在150-250℃之间的温度，以防止在室内沉积不期望的副产物。这有助于室清洁程序，其可以使用原位氯基方法进行。加热的衬套和腔体之间的良好的隔热能使室外保持在60-65℃的安全工作温度。加热排气组件还与处理室结合使用以除去废气和反应副产品。使用外部加热器将排气组件保持在约150-200℃的温度下，以使排气组件的内表面上的不期望的沉积物最小化。

IPRDB

热门服务

关于我们

友情链接

联系方式