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    • 2. 发明申请
    • METHOD OF FORMING VIAS IN SEMICONDUCTOR SUBSTRATES AND RESULTING STRUCTURES
    • 在半导体衬底和结构结构中形成VIAS的方法
    • US20110074043A1
    • 2011-03-31
    • US12955359
    • 2010-11-29
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • Charles M. WatkinsKyle K. KirbyAlan G. WoodSalman AkramWarren M. Farnworth
    • H01L23/48
    • H01L21/76898
    • Methods for forming through vias in a semiconductor substrate and resulting structures are disclosed. In one embodiment, a through via may be formed by forming a partial via from an active surface through a conductive element thereon and a portion of the substrate underlying the conductive element. The through via may then be completed by laser ablation or drilling from a back surface. In another embodiment, a partial via may be formed by laser ablation or drilling from the back surface of a substrate to a predetermined distance therein. The through via may be completed from the active surface by forming a partial via extending through the conductive element and the underlying substrate to intersect the laser-drilled partial via. In another embodiment, a partial via may first be formed by laser ablation or drilling from the back surface of the substrate followed by dry etching to complete the through via.
    • 公开了在半导体衬底中形成贯通孔的方法和所得到的结构。 在一个实施例中,可以通过从活性表面通过其上的导电元件和导电元件下面的基底的一部分形成部分通孔来形成通孔。 然后可以通过从后表面的激光烧蚀或钻孔来完成通孔。 在另一个实施例中,部分通孔可以通过激光烧蚀或从衬底的背面钻孔到其中的预定距离来形成。 通孔可以通过形成延伸通过导电元件和下面的衬底以与激光钻孔的部分通孔相交的部分通孔从活性表面完成。 在另一个实施例中,可以首先通过激光烧蚀或从衬底的背面进行钻孔形成部分通孔,然后通过干蚀刻来完成通孔。
    • 6. 发明授权
    • Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer
    • 使用各向异性导电层测试和组装凸起装置的装置和方法
    • US07214962B2
    • 2007-05-08
    • US11083057
    • 2005-03-16
    • Salman AkramAlan G. WoodWarren M. Farnworth
    • Salman AkramAlan G. WoodWarren M. Farnworth
    • H01L23/58H01L29/10
    • H01L23/13G01R1/0466G01R1/0483H01L23/49827H01L2224/05571H01L2224/05573H01L2224/131H01L2224/16237H01L2224/8114H01L2924/00014H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01033H01L2924/01047H01L2924/01079H01L2924/01082H01L2924/014H01L2924/0781H01L2924/15174H05K3/325H05K3/326H01L2224/05599
    • The present invention is directed toward apparatus and methods of testing and assembling bumped die and bumped devices using an anisotropically conductive layer. In one embodiment, a semiconductor device comprises a bumped device having a plurality of conductive bumps formed thereon, a substrate having a plurality of contact pads distributed thereon and approximately aligned with the plurality of conductive bumps, and an anisotropically conductive layer disposed between and mechanically coupled to the bumped device and to the substrate. The anisotropically conductive layer electrically couples each of the conductive bumps with a corresponding one of the contact pads. In another embodiment, an apparatus for testing a bumped device having a plurality of conductive bumps includes a substrate having a plurality of contact pads distributed thereon and substantially alignable with the plurality of conductive bumps, and an anisotropically conductive layer disposed on the first surface and engageable with the plurality of conductive bumps to electrically couple each of the conductive bumps with a corresponding one of the contact pads. Alternately, the test apparatus may also include an alignment device or a bumped device handler. In another embodiment, a method of testing a bumped device includes engaging a plurality of contact pads with an anisotropically conductive layer, engaging the plurality of conductive bumps with the anisotropically conductive layer substantially opposite from and in approximate alignment with the plurality of contact pads, forming a plurality of conductive paths through the anisotropically conductive layer so that each of the conductive bumps is electrically coupled to one of the contact pads, and applying test signals through at least some of the contact pads and the conductive paths to at least some of the conductive bumps.
    • 本发明涉及使用各向异性导电层测试和组装凸模和凸起装置的装置和方法。 在一个实施例中,半导体器件包括具有形成在其上的多个导电凸起的凸起器件,衬底,其上分布有多个接触焊盘并且与多个导电凸块大致对准,并且各向异性导电层设置在机械耦合 到凸起的装置和衬底。 各向异性导电层将每个导电凸块与对应的一个接触垫电耦合。 在另一个实施例中,一种用于测试具有多个导电凸块的凸起器件的设备包括:衬底,其具有分布在其上的多个接触焊盘并且可与多个导电凸块基本对准,以及设置在第一表面上并可接合的各向异性导电层 其中多个导电凸块将每个导电凸块与相应的一个接触垫电耦合。 或者,测试装置还可以包括对准装置或凸起的装置处理器。 在另一个实施例中,一种测试凸起装置的方法包括:将多个接触垫与各向异性导电层接合,使多个导电凸块与多个接触垫基本上相对并与其大致对准的各向异性导电层接合,形成 通过各向异性导电层的多个导电路径,使得每个导电凸块电耦合到一个接触焊盘,以及将测试信号通过至少一些接触焊盘和导电路径施加到至少一些导电 颠簸
    • 9. 发明授权
    • Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer
    • 使用各向异性导电层测试和组装凸起装置的装置和方法
    • US06876089B2
    • 2005-04-05
    • US10338541
    • 2003-01-07
    • Salman AkramAlan G. WoodWarren M. Farnworth
    • Salman AkramAlan G. WoodWarren M. Farnworth
    • G01R1/04H01L21/60H01L23/13H01L23/48H01L23/498H05K3/32H01L23/52H01L29/40
    • H01L23/13G01R1/0466G01R1/0483H01L23/49827H01L2224/05571H01L2224/05573H01L2224/131H01L2224/16237H01L2224/8114H01L2924/00014H01L2924/01005H01L2924/01006H01L2924/01013H01L2924/01033H01L2924/01047H01L2924/01079H01L2924/01082H01L2924/014H01L2924/0781H01L2924/15174H05K3/325H05K3/326H01L2224/05599
    • The present invention is directed toward apparatus and methods of testing and assembling bumped die and bumped devices using an anisotropically conductive layer. In one embodiment, a semiconductor device comprises a bumped device having a plurality of conductive bumps formed thereon, a substrate having a plurality of contact pads distributed thereon and approximately aligned with the plurality of conductive bumps, and an anisotropically conductive layer disposed between and mechanically coupled to the bumped device and to the substrate. The anisotropically conductive layer electrically couples each of the conductive bumps with a corresponding one of the contact pads. In another embodiment, an apparatus for testing a bumped device having a plurality of conductive bumps includes a substrate having a plurality of contact pads distributed thereon and substantially alignable with the plurality of conductive bumps, and an anisotropically conductive layer disposed on the first surface and engageable with the plurality of conductive bumps to electrically couple each of the conductive bumps with a corresponding one of the contact pads. Alternately, the test apparatus may also include an alignment device or a bumped device handler. In another embodiment, a method of testing a bumped device includes engaging a plurality of contact pads with an anisotropically conductive layer, engaging the plurality of conductive bumps with the anisotropically conductive layer substantially opposite from and in approximate alignment with the plurality of contact pads, forming a plurality of conductive paths through the anisotropically conductive layer so that each of the conductive bumps is electrically coupled to one of the contact pads, and applying test signals through at least some of the contact pads and the conductive paths to at least some of the conductive bumps.
    • 本发明涉及使用各向异性导电层测试和组装凸模和凸起装置的装置和方法。 在一个实施例中,半导体器件包括具有形成在其上的多个导电凸起的凸起器件,衬底,其上分布有多个接触焊盘并且与多个导电凸块大致对准,并且各向异性导电层设置在机械耦合 到凸起的装置和衬底。 各向异性导电层将每个导电凸块与对应的一个接触垫电耦合。 在另一个实施例中,一种用于测试具有多个导电凸块的凸起器件的设备包括:衬底,其具有分布在其上的多个接触焊盘并且可与多个导电凸块基本对准,以及设置在第一表面上并可接合的各向异性导电层 其中多个导电凸块将每个导电凸块与相应的一个接触垫电耦合。 或者,测试装置还可以包括对准装置或凸起的装置处理器。 在另一个实施例中,一种测试凸起装置的方法包括:将多个接触垫与各向异性导电层接合,使多个导电凸块与多个接触垫基本上相对并与其大致对准的各向异性导电层接合,形成 通过各向异性导电层的多个导电路径,使得每个导电凸块电耦合到一个接触焊盘,以及将测试信号通过至少一些接触焊盘和导电路径施加到至少一些导电 颠簸