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1. 发明申请

WO1997036462A1 DEVICE AND METHOD FOR PLASMA TREATMENT 审中-公开
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：WO1997036462A1
公开(公告)日：1997-10-02
申请号：PCT/JP1997001071
申请日：1997-03-27
申请人： SUMITOMO METAL INDUSTRIES, LTD. , MABUCHI, Hiroshi , TSUYUGUCHI, Junya , KATAYAMA, Katsuo , HAYAMI, Toshihiro , IDA, Hideo , MURAKAMI, Tomomi , TAKEDA, Naohiko
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： H05H01/46
CPC分类号： B05D1/62 , C23C16/4401 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J2237/022
摘要： A device and method used for etching, ashing, CVD, etc., at the time of manufacturing large scale integrated circuits (LSI) and liquid crystal displays (LCD). The device is a plasma treatment device provided with a dielectric plate for microwave waveguide, a microwave introducing window counterposed to the dielectric plate, and a reaction vessel in which a sample stage is so positioned that the table faces to the microwave introducing window. The device has a recessed section in the area of the microwave introducing window facing the sample stage. In the method, a sample is treated with a plasma by using the plasma treatment device. The plasma density in the area facing the sample and the treating speed of the sample with the plasma are increased. When etching a fine hole pattern, the pattern missing is improved. Therefore, a semiconductor device having a fine pattern can be manufactured and, at the same time, the manufacturing yield of the device, etc., is improved.
摘要翻译：在制造大规模集成电路（LSI）和液晶显示器（LCD）时用于蚀刻，灰化，CVD等的器件和方法。该装置是设置有用于微波波导的电介质板，与电介质板对置的微波导入窗口的等离子体处理装置，以及反应容器，其中样品台被定位成使得台面朝向微波导入窗。该装置在面向样品台的微波引入窗口的区域中具有凹陷部分。在该方法中，通过使用等离子体处理装置用等离子体处理样品。样品面积的等离子体密度和样品与等离子体的处理速度增加。当蚀刻细孔图案时，图案缺失得到改善。因此，可以制造具有精细图案的半导体器件，并且同时提高了器件的制造成品率等。

2. 发明申请

WO1997036461A1 DEVICE AND METHOD FOR PLASMA TREATMENT 审中-公开
标题翻译：用于等离子体处理的装置和方法
公开(公告)号：WO1997036461A1
公开(公告)日：1997-10-02
申请号：PCT/JP1997001070
申请日：1997-03-27
申请人： SUMITOMO METAL INDUSTRIES, LTD. , MABUCHI, Hiroshi , HAYAMI, Toshihiro , IDA, Hideo , MURAKAMI, Tomomi , TAKEDA, Naohiko , TSUYUGUCHI, Junya , KATAYAMA, Katsuo
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： H05H01/46
CPC分类号： B05D1/62 , C23C16/4401 , C23C16/511 , H01J37/32192 , H01J37/32238 , H01J2237/022
摘要： A device and method for plasma treatment used for etching, ashing, CVD, etc., at the time of manufacturing large scale integrated circuits (LSI) and liquid crystal displays (LCD). The device is a plasma treatment device which generates a plasma by using microwaves introduced through a microwave introducing window and controls the ions in the plasma with a high frequency impressed upon a sample stage and the counter electrode (grounding electrode) opposing to the sample stage is provided at the peripheral edge of the microwave introducing window. In the plasma treatment method, a sample is treated with a plasma by using the plasma treatment device. When the device and method are used, particles or metallic contaminants adhering to the sample are reduced and the manufacturing yield of a semiconductor device, etc., is improved.
摘要翻译：在制造大规模集成电路（LSI）和液晶显示器（LCD）时用于蚀刻，灰化，CVD等的等离子体处理的装置和方法。该装置是通过使用通过微波引入窗口引入的微波产生等离子体的等离子体处理装置，并以施加在样品台上的高频率控制等离子体中的离子，并且与样品台相对的对置电极（接地电极）为设置在微波引入窗口的外围边缘处。在等离子体处理方法中，通过使用等离子体处理装置，用等离子体处理样品。当使用装置和方法时，附着在样品上的颗粒或金属污染物被降低，并且半导体装置等的制造成品率得到改善。

3. 发明申请

WO1997046057A1 PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：WO1997046057A1
公开(公告)日：1997-12-04
申请号：PCT/JP1997001756
申请日：1997-05-22
申请人： SUMITOMO METAL INDUSTRIES, LTD. , MABUCHI, Hiroshi , HAYAMI, Toshihiro , HONDA, Shigeki
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： H05H01/46
CPC分类号： H01J37/32467 , C23C16/50 , C23C16/511 , H01J37/32192 , H01J37/32477 , H01J37/32522
摘要： A plasma treatment apparatus and a plasma treatment method which are suitable for etching, ashing, CVD, etc. in the manufacturing process of a large scale integrated circuit (LSI) and a liquid crystal display (LSD). The side wall part (11) of a reaction chamber for plasma treatment is divided into an inner side wall (11a) which faces the inside of the reaction chamber and an outer side wall (11b) which faces the outside of the reaction chamber. The inner side wall (11a) is electrically isolated from the other parts of the reaction chamber and is not electrically grounded. With this construction, the reproducibility of the plasma treatment is improved. Further, the inner side wall (11a) is thermally isolated from the other parts of the reaction chamber and has a means for temperature control. With this construction, the temperature control of the inner side wall (11a) facing the reaction chamber is improved and the maintainability of the apparatus at the time of operation is further improved.
摘要翻译：在大规模集成电路（LSI）和液晶显示器（LSD）的制造工艺中适用于蚀刻，灰化，CVD等的等离子体处理装置和等离子体处理方法。用于等离子体处理的反应室的侧壁部分（11）被分成面对反应室内侧的内侧壁（11a）和面向反应室外侧的外侧壁（11b）。内侧壁（11a）与反应室的其它部分电隔离，不会电接地。利用这种结构，提高了等离子体处理的再现性。此外，内侧壁（11a）与反应室的其它部分热隔离，并且具有用于温度控制的装置。利用这种结构，提高了面向反应室的内侧壁（11a）的温度控制，并且进一步提高了装置在操作时的维护性。

4. 发明申请

WO1996003019A1 PLASMA PROCESSING DEVICE 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：WO1996003019A1
公开(公告)日：1996-02-01
申请号：PCT/JP1995001403
申请日：1995-07-13
申请人： SUMITOMO METAL INDUSTRIES, LTD. , MABUCHI, Hiroshi , YOSHIKI, Takahiro , MATSUMOTO, Naoki , KOMACHI, Kyoichi , KANAYAMA, Syuta , EBATA, Toshiki
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： H05H01/46
CPC分类号： H01J37/32211 , H01J37/32192 , H01J37/32229 , H01J37/32238
摘要： A plasma processing device for performing a plasma etching, a plasma ashing, a plasma CVD, etc., of a semiconductor device substrate, a glass substrate for liquid crystal display, etc., having a large area. The plasma processing device comprises a microwave oscillator (26), a microwave waveguide (23), a microwave introducing window (4), a reaction chamber (2), etc. A dielectric layer (21) is formed on the window (4) on the opposite side to a hollow space (20). The layer (21) comprises a plurality of dielectric layers (21a and 21b) and microwave waveguides (23a and 23b) are connected to the layers (21a and 21b), respectively. Therefore, uniform plasma processing of a glass substrate for liquid crystal display, etc., having a large area with a simple constitution is stably performed.
摘要翻译：一种等离子体处理装置，用于执行具有大面积的半导体器件基板，液晶显示器用玻璃基板等的等离子体蚀刻，等离子体灰化，等离子体CVD等。等离子体处理装置包括微波振荡器（26），微波波导（23），微波引入窗（4），反应室（2）等。在窗口（4）上形成介电层（21）在空心空间（20）的相对侧。层（21）包括多个电介质层（21a和21b），微波波导（23a和23b）分别连接到层（21a和21b）。因此，稳定地进行了具有简单结构的具有大面积的液晶显示器等的玻璃基板的均匀等离子体处理。

5. 发明申请

WO1998022626A1 REDUCED IRON MANUFACTURING METHOD AND APPARATUS 审中-公开
标题翻译：减少铁制造方法和装置
公开(公告)号：WO1998022626A1
公开(公告)日：1998-05-28
申请号：PCT/JP1997004221
申请日：1997-11-19
申请人： SUMITOMO METAL INDUSTRIES, LTD. , KAMEI, Yasuo , KAWAGUCHI, Takazo , YAMAOKA, Hideyuki , NAKAMURA, Yoshihisa
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： C21B13/10
CPC分类号： C21B13/143 , C21B13/105 , C21B13/14 , C21B2100/42 , C21B2100/60 , Y02P10/136
摘要： A material mixture in which pulverized iron oxide and a pulverized solid reducer are mixed with each other is put as it is in a powdery state into a reducing furnace to form a bed of a substantially uniform thickness. The bed is compressed in some cases, and the iron oxide is reduced at high temperature maintaining the temperature in the reducing furnace at not lower than 1100 DEG C. Since the material mixture has not to be lumped, for example, pelletized, the reduced iron manufacturing cost can be lowered. This method can be easily executed by the reduced iron manufacturing apparatus of the invention. A high-quality hot metal can be manufactured by charging high-temperature reduced iron obtained by this method into a vertical furnace or a smelting melt-reducing furnace, and melting the same with a high thermal efficiency.
摘要翻译：将粉碎的氧化铁和粉碎的固体还原剂彼此混合的材料混合物原样放入还原炉中以形成基本均匀厚度的床。在一些情况下，床被压缩，并且氧化铁在高温下还原，将还原炉中的温度保持在不低于1100℃。由于材料混合物不被集中，例如造粒，还原铁制造成本可以降低。该方法可以通过本发明的还原铁制造装置容易地执行。通过将通过该方法获得的高温还原铁装入立式炉或冶炼熔融还原炉，并以高的热效率将其熔融，可以制造高品质的铁水。

6. 发明申请

WO1998010888A1 WELDING MATERIAL FOR STAINLESS STEELS 审中-公开
标题翻译：不锈钢焊接材料
公开(公告)号：WO1998010888A1
公开(公告)日：1998-03-19
申请号：PCT/JP1997003216
申请日：1997-09-11
申请人： SUMITOMO METAL INDUSTRIES, LTD. , SUMIKIN WELDING INDUSTRIES, LTD. , MURATA, Yoshiaki , KOMIZO, Yuichi , HIRATA, Hiroyuki
发明人： SUMITOMO METAL INDUSTRIES, LTD. , SUMIKIN WELDING INDUSTRIES, LTD.
IPC分类号： B23K35/368
CPC分类号： B23K35/3086 , B23K35/0266
摘要： A welding material for stainless steels which provides a welding metal having excellent corrosion resistance and mechanical properties without defect in the wearable electrode-type welding or in the nonwearable-type welding of all position, facilitating the machining for forming wires. The welding material is a composite wire comprising an outer formation of a steel and a filler without slag-forming agent packaged inside the outer formation. The wire as a whole has the following chemical composition (% by weight): C: 0.03 % or less, Si: 1.0 % or less, Mn: 1.5 % or less, P: 0.04 % or less, S: 0.01 % or less, Al: 0.5 % or less, Ni: 8.0 to 10.0%, Cr: 22.0 to 26.0 %, Mo: 2.0 to 5.0 %, N: 0.12 to 0.24 %, Co: 3.0 % or less, W: 5.0 % or less, Cu: 2.0 % or less, V: 1.50 % or less, the remainder being Fe and unavoidable impurities. The welding material has an anti-pitting index PREW represented by the following formula (1): PREW = Cr + 3.3 (Mo + 0.5W) + 16N of not smaller than 42.0 and a ferrite capacity index Ph represented by the following formula (2): Ph = Ni + 30(C + N) - 0.6(Cr + 1.5Si + Mo + 0.4W) + 5.6/Cr + 1.5Si + Mo + 0.4W - 6 of 0.12 to 0.25.
摘要翻译：一种用于不锈钢的焊接材料，其提供具有优异的耐腐蚀性和机械性能的焊接金属，在可穿戴电极型焊接中的无缺陷或所有位置的非固化型焊接中，有助于形成电线的加工。该焊接材料是一种复合线材，其包括外部形成的钢和不包含成型剂的填料，其包裹在外部结构内部。电线整体具有以下化学组成（重量％）：C：0.03％以下，Si：1.0％以下，Mn：1.5％以下，P：0.04％以下，S：0.01％以下，Al：0.5％以下，Ni：8.0〜10.0％，Cr：22.0〜26.0％，Mo：2.0〜5.0％，N：0.12〜0.24％，Co：3.0％以下，W：5.0％ Cu：2.0％以下，V：1.50％以下，余量为Fe和不可避免的杂质。焊接材料具有以下公式（1）表示的抗点蚀指数PREW：PREW = Cr + 3.3（Mo + 0.5W）+ 16N为42.0以上，铁素体能力指数Ph为由下式（2 ）：Ph = Ni + 30（C + N）-0.6（Cr + 1.5Si + Mo + 0.4W）+ 5.6 / Cr + 1.5Si + Mo + 0.4W-6为0.12〜0.25。

7. 发明申请

WO1997039843A1 SEAMLESS STEEL PIPE MANUFACTURING METHOD AND EQUIPMENT 审中-公开
标题翻译：无缝钢管制造方法和设备
公开(公告)号：WO1997039843A1
公开(公告)日：1997-10-30
申请号：PCT/JP1997001370
申请日：1997-04-18
申请人： SUMITOMO METAL INDUSTRIES, LTD. , KONDO, Kunio , OKADA, Yasutaka , TANIMOTO, Seiji
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： B21B19/04
CPC分类号： B21B23/00 , B21B17/14 , B21B19/04 , C21D8/10
摘要： A method of producing seamless steel pipes of excellent performance efficiently by an on-line system, and seamless steel pipe manufacturing equipment in which the apparatuses used from a casting step to a heat treatment step are provided on-line. In this method, the following steps (1-6) are carried out continuously in order. 1) Round billets are manufactured by a continuous casting machine (1). 2) The billets temporarily cooled to a temperature not more than Ar1 transformation point are heated again and soaked in a heating furnace (3). 3) The soaked billets are bore-rolled by a piercer (5) at a rate of strain of not more than 200/sec to obtain raw pipes. 4) The raw pipes are rolled by a rolling mill (M), in which a mandrel mill (7) and a sizer (8) are arranged closely to each other, at an average rate of strain of not less than 0.01/sec, a reduction ratio of not less than 40 % and a finishing temperature of 800 DEG -1050 DEG C, whereby seamless steel pipes are manufactured. 5) These seamless steel pipes are cooled by a cooling unit (9) at a cooling rate of not less than 80 DEG C/min to a temperature not higher than Ar3 transformation point. 6) The cooled seamless steel pipes are heated again at 850 DEG -1000 DEG C for 10 sec to 30 min, quenched and then tempered.
摘要翻译：通过在线系统有效地生产出优异性能的无缝钢管的方法，以及从铸造步骤到热处理步骤使用的装置在线设置的无缝钢管制造设备。在该方法中，依次进行以下的步骤（1-6）。 1）圆坯由连续铸造机（1）制造。 2）将暂时冷却到不高于Ar1相变点的温度的钢坯再次加热并浸泡在加热炉（3）中。 3）浸渍过的坯料以不大于200 /秒的应变速率由穿孔机（5）进行钻孔，得到原料管。 4）原料管通过轧制机（M）轧制，其中芯棒式无缝管轧机（7）和分级机（8）彼此紧密地排列，平均应变速率不小于0.01 /秒，减少率不低于40％，最终温度为800〜-1050℃，由此制造无缝钢管。 5）这些无缝钢管以冷却单元（9）以不低于80℃/分钟的冷却速度冷却至不高于Ar3相变点的温度。 6）将冷却的无缝钢管在850°-1000℃再次加热10秒至30分钟，淬火然后回火。

8. 发明申请

WO1997014521A1 METHOD FOR CONTROLLING THE LEVEL OF MOLTEN METAL FOR A CONTINUOUS CASTING MACHINE 审中-公开
标题翻译：用于控制连续铸造机的金属含量的方法
公开(公告)号：WO1997014521A1
公开(公告)日：1997-04-24
申请号：PCT/JP1996002984
申请日：1996-10-15
申请人： SUMITOMO METAL INDUSTRIES, LTD. , HANAZAKI, Kazuharu , OKA, Masahiko
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： B22D11/18
CPC分类号： B22D11/181
摘要： A method for controlling the level of molten metal for a continuous casting machine provided with a non-solidified rolling device in order to control a change in level of the molten metal due to the change in the operating conditions such as the drawing speed, and rolling speed and improve a product yield, the method comprising the steps of: (i) estimating disturbance imparted by a change of the operating conditions of a continuous casting machine to the level of molten metal before the change occurs that causes a molten metal level fluctuation; (ii) obtaining a correcting amount of the controlling instruction that can remove the estimated disturbance and a delay time required for the movement of a molten metal pouring means caused by an instruction including the correcting amount; and (iii) providing a control instruction to which the correcting amount is added earlier by a time equal to the delay time than the initiation of the change of the operation.
摘要翻译：一种用于控制具有非凝固滚动装置的连续铸造机的熔融金属的水平的方法，以便控制由于诸如拉拔速度的操作条件的变化导致的熔融金属的水平的变化，并且轧制速度提高产品产量，该方法包括以下步骤：（i）在变化发生之前，将连续铸造机的操作条件的变化所估计的干扰估计为熔融金属水平波动的变化; （ii）获得能够消除所估计的扰动的控制指令的校正量和由包括校正量的指令引起的熔融金属浇注装置移动所需的延迟时间; 以及（iii）提供一个控制指令，在该控制指令中，比起开始的操作提前一个等于延迟时间的时间加上校正量的控制指令。

9. 发明申请

WO1997000748A1 METHOD OF CONTINUOUSLY CASTING THIN CAST PIECES 审中-公开
标题翻译：连续铸造铸件的方法
公开(公告)号：WO1997000748A1
公开(公告)日：1997-01-09
申请号：PCT/JP1996001701
申请日：1996-06-20
申请人： SUMITOMO METAL INDUSTRIES, LTD. , KANAZAWA, Takashi , HIRAKI, Sei , KUMAKURA, Seiji
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： B22D11/20
CPC分类号： B22D11/1206
摘要： Object: to provide a method of continuously casting thin cast pieces. Constitution: a method of unsolidified rolling continuous casting, by which unsolidified cast pieces are subjected to rolling in a roller apron zone to produce thin cast pieces, and in which thin cast pieces are cast in the following steps 1 and 2: 1. a steady casting speed is temporarily decreased to a speed, at which thin cast pieces after rolling become completely solidified in an unsolidified rolling zone, and 2. after a thickness of a thin cast piece having been subjected to rolling is restored to an original thickness of the cast piece before the start of rolling, a casting speed is again increased to the original steady casting speed to release a rolling force at the time of rolling.
摘要翻译：对象：提供连续铸造薄铸件的方法。结构：一种非固化轧制连续铸造方法，其中未固化的铸件在滚筒围裙区域中进行轧制以制造薄铸件，并且在下列步骤1和2中铸造薄铸件：1.稳定铸造速度暂时降低到轧制后的薄铸件在未固化轧制区域中完全固化的速度，以及在经过轧制的薄铸件的厚度恢复到铸件的原始厚度之后在轧制开始之前，铸造速度再次提高到原始的稳定铸造速度，以在轧制时释放轧制力。

10. 发明申请

WO1996008019A1 DIELECTRIC PROCELAIN COMPOSITION AND ITS MANUFACTURE 审中-公开
标题翻译：电介质组合物及其制造
公开(公告)号：WO1996008019A1
公开(公告)日：1996-03-14
申请号：PCT/JP1995001784
申请日：1995-09-07
申请人： SUMITOMO METAL INDUSTRIES, LTD. , TAKADA, Takahiro
发明人： SUMITOMO METAL INDUSTRIES, LTD.
IPC分类号： H01B03/12
CPC分类号： H01B3/12 , C04B35/465
摘要： A dielectric porcelain composition. The conventional MgTiO3 porcelain composition is not suitable material for small-sized electronic parts due to its relatively small dielectric constant ( epsilon r) of 20, while the CaTiO3 porcelain composition is not suitable for electronic parts for high-frequency applications due to its small Q-value. In addition, it is difficult to control these conventional procelain compositions' temperature coefficients of resonance frequency. This invention solves the above-mentioned problems by providing a dielectric porcelain composition expressed by the following chemical formula: xMgTiO3.(1-x)CaTiO3.y(Ln 1-wLn w)2Ti2zO3+4z, where, Ln and Ln represent lanthanoid elements and 0
摘要翻译：介电瓷组合物。传统的MgTiO3瓷组合物由于其相对较小的介电常数（εr）为20，不适用于小尺寸电子部件，而CaTiO3瓷组合物由于其小Q而不适用于高频应用的电子部件 -值。另外，难以控制这些传统的组合物的共振频率的温度系数。本发明通过提供由以下化学式表示的电介质瓷组合物来解决上述问题：xMgTiO 3（1-x）CaTiO 3 y（Ln 1-wLn 2 w）2 Ti 2 zO 3 + 4z，其中， Ln 1和Ln 2代表镧系元素，且0≤w≤1,0.20≤x≤0.80,0.05≤y≤5.0，并且0.25 = 1.5。这种电介质陶瓷组合物可用于处理微波带信号的谐振器，滤波器，电容器等。

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